JP2012247327A5 - - Google Patents
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- Publication number
- JP2012247327A5 JP2012247327A5 JP2011119918A JP2011119918A JP2012247327A5 JP 2012247327 A5 JP2012247327 A5 JP 2012247327A5 JP 2011119918 A JP2011119918 A JP 2011119918A JP 2011119918 A JP2011119918 A JP 2011119918A JP 2012247327 A5 JP2012247327 A5 JP 2012247327A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- imaging apparatus
- radiation imaging
- sensor substrate
- nonionic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 230000005855 radiation Effects 0.000 claims description 50
- 238000003384 imaging method Methods 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 37
- 238000006243 chemical reaction Methods 0.000 claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 239000011347 resin Substances 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- 230000035945 sensitivity Effects 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 230000001681 protective effect Effects 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 3
- 239000004925 Acrylic resin Substances 0.000 claims description 2
- 229920000178 Acrylic resin Polymers 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 claims description 2
- 229920000052 poly(p-xylylene) Polymers 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 44
- 238000000034 method Methods 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 238000009833 condensation Methods 0.000 description 3
- 230000005494 condensation Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- BOPGJASFSFBTIY-UHFFFAOYSA-N [O-2].S.[Gd+3] Chemical compound [O-2].S.[Gd+3] BOPGJASFSFBTIY-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011119918A JP5874201B2 (ja) | 2011-05-30 | 2011-05-30 | 放射線撮像装置および放射線撮像表示システム |
| US13/460,163 US20120305777A1 (en) | 2011-05-30 | 2012-04-30 | Radiation image pickup device and radiation image pickup display system including the same |
| CN201210161768.8A CN102810546B (zh) | 2011-05-30 | 2012-05-23 | 放射线图像拾取装置和包括它的放射线图像拾取显示系统 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011119918A JP5874201B2 (ja) | 2011-05-30 | 2011-05-30 | 放射線撮像装置および放射線撮像表示システム |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012247327A JP2012247327A (ja) | 2012-12-13 |
| JP2012247327A5 true JP2012247327A5 (https=) | 2014-06-26 |
| JP5874201B2 JP5874201B2 (ja) | 2016-03-02 |
Family
ID=47234214
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011119918A Expired - Fee Related JP5874201B2 (ja) | 2011-05-30 | 2011-05-30 | 放射線撮像装置および放射線撮像表示システム |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20120305777A1 (https=) |
| JP (1) | JP5874201B2 (https=) |
| CN (1) | CN102810546B (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015177155A (ja) * | 2014-03-18 | 2015-10-05 | セイコーエプソン株式会社 | 光電変換装置および電子機器 |
| US10330799B2 (en) | 2014-06-30 | 2019-06-25 | Sharp Kabushiki Kaisha | X-ray image pickup system |
| JP2016111211A (ja) * | 2014-12-08 | 2016-06-20 | セイコーエプソン株式会社 | 光電変換装置および電子機器 |
| EP3327810B1 (en) * | 2015-07-17 | 2022-11-02 | Sony Group Corporation | Imaging element, multilayer imaging element and solid-state imaging device |
| JP2017083218A (ja) * | 2015-10-26 | 2017-05-18 | 株式会社ブイ・テクノロジー | X線撮像素子の製造方法 |
| JP2017136241A (ja) * | 2016-02-04 | 2017-08-10 | 株式会社ブイ・テクノロジー | X線撮像素子の製造方法 |
| KR102517726B1 (ko) * | 2017-12-05 | 2023-04-03 | 엘지디스플레이 주식회사 | 디지털 엑스레이 검출기용 어레이 기판과 이를 포함하는 디지털 엑스레이 검출기 및 그 제조 방법 |
| CN114342079B (zh) * | 2019-08-30 | 2025-01-07 | 株式会社日本显示器 | 检测装置 |
| JP7446786B2 (ja) * | 2019-11-18 | 2024-03-11 | 株式会社ジャパンディスプレイ | 検出装置及び表示装置 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5132539A (en) * | 1991-08-29 | 1992-07-21 | General Electric Company | Planar X-ray imager having a moisture-resistant sealing structure |
| JPH11186532A (ja) * | 1997-12-22 | 1999-07-09 | Canon Inc | 光センサー |
| US20030191693A1 (en) * | 2002-04-08 | 2003-10-09 | Itamar Aphek | System and method for conducting an advertising business |
| JP4449749B2 (ja) * | 2005-01-05 | 2010-04-14 | コニカミノルタホールディングス株式会社 | 放射線検出装置およびその製造方法 |
| JP2006343277A (ja) * | 2005-06-10 | 2006-12-21 | Canon Inc | 放射線検出装置及び放射線撮像システム |
| JPWO2008102645A1 (ja) * | 2007-02-23 | 2010-05-27 | コニカミノルタエムジー株式会社 | シンチレータパネル及び放射線イメージセンサ |
| US7605374B2 (en) * | 2007-03-27 | 2009-10-20 | General Electric Company | X-ray detector fabrication methods and apparatus therefrom |
| US7759628B2 (en) * | 2007-06-22 | 2010-07-20 | Seiko Epson Corporation | Detection device and electronic apparatus having plural scanning lines, detection lines, power supply lines and plural unit circuits arranged on a substrate |
| JP5142943B2 (ja) * | 2007-11-05 | 2013-02-13 | キヤノン株式会社 | 放射線検出装置の製造方法、放射線検出装置及び放射線撮像システム |
| JPWO2009139209A1 (ja) * | 2008-05-12 | 2011-09-15 | コニカミノルタエムジー株式会社 | 放射線画像検出器および放射線画像検出器の製造方法 |
| WO2010106884A1 (ja) * | 2009-03-19 | 2010-09-23 | コニカミノルタエムジー株式会社 | シンチレータパネル |
| JP5791281B2 (ja) * | 2010-02-18 | 2015-10-07 | キヤノン株式会社 | 放射線検出装置及び放射線検出システム |
| JP2012182346A (ja) * | 2011-03-02 | 2012-09-20 | Konica Minolta Medical & Graphic Inc | 放射線画像撮影装置 |
-
2011
- 2011-05-30 JP JP2011119918A patent/JP5874201B2/ja not_active Expired - Fee Related
-
2012
- 2012-04-30 US US13/460,163 patent/US20120305777A1/en not_active Abandoned
- 2012-05-23 CN CN201210161768.8A patent/CN102810546B/zh not_active Expired - Fee Related
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