CN102810546B - 放射线图像拾取装置和包括它的放射线图像拾取显示系统 - Google Patents
放射线图像拾取装置和包括它的放射线图像拾取显示系统 Download PDFInfo
- Publication number
- CN102810546B CN102810546B CN201210161768.8A CN201210161768A CN102810546B CN 102810546 B CN102810546 B CN 102810546B CN 201210161768 A CN201210161768 A CN 201210161768A CN 102810546 B CN102810546 B CN 102810546B
- Authority
- CN
- China
- Prior art keywords
- radiation image
- layer
- image pickup
- image pick
- radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005855 radiation Effects 0.000 title claims abstract description 143
- 238000006243 chemical reaction Methods 0.000 claims abstract description 48
- 230000035945 sensitivity Effects 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims description 70
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 11
- 230000001681 protective effect Effects 0.000 claims description 9
- 229920005591 polysilicon Polymers 0.000 claims description 8
- 229920005989 resin Polymers 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 229920000052 poly(p-xylylene) Polymers 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims 1
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 1
- 230000005622 photoelectricity Effects 0.000 claims 1
- 230000001629 suppression Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 101
- 239000010410 layer Substances 0.000 description 153
- 239000010408 film Substances 0.000 description 77
- 230000004048 modification Effects 0.000 description 27
- 238000012986 modification Methods 0.000 description 27
- 238000000034 method Methods 0.000 description 25
- 239000011229 interlayer Substances 0.000 description 21
- 238000009833 condensation Methods 0.000 description 15
- 230000005494 condensation Effects 0.000 description 15
- 239000000463 material Substances 0.000 description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 14
- 230000008569 process Effects 0.000 description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 description 10
- 238000003860 storage Methods 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229920002050 silicone resin Polymers 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000009825 accumulation Methods 0.000 description 5
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000005868 electrolysis reaction Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical class O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 210000000038 chest Anatomy 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- MIKCAECBBIRHCH-UHFFFAOYSA-N gadolinium(3+);oxygen(2-);trisulfide Chemical compound [O-2].[O-2].[O-2].[S-2].[S-2].[S-2].[Gd+3].[Gd+3].[Gd+3].[Gd+3] MIKCAECBBIRHCH-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
- H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
Landscapes
- Measurement Of Radiation (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011119918A JP5874201B2 (ja) | 2011-05-30 | 2011-05-30 | 放射線撮像装置および放射線撮像表示システム |
| JP2011-119918 | 2011-05-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102810546A CN102810546A (zh) | 2012-12-05 |
| CN102810546B true CN102810546B (zh) | 2017-03-01 |
Family
ID=47234214
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210161768.8A Expired - Fee Related CN102810546B (zh) | 2011-05-30 | 2012-05-23 | 放射线图像拾取装置和包括它的放射线图像拾取显示系统 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20120305777A1 (https=) |
| JP (1) | JP5874201B2 (https=) |
| CN (1) | CN102810546B (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015177155A (ja) * | 2014-03-18 | 2015-10-05 | セイコーエプソン株式会社 | 光電変換装置および電子機器 |
| US10330799B2 (en) | 2014-06-30 | 2019-06-25 | Sharp Kabushiki Kaisha | X-ray image pickup system |
| JP2016111211A (ja) * | 2014-12-08 | 2016-06-20 | セイコーエプソン株式会社 | 光電変換装置および電子機器 |
| EP3327810B1 (en) * | 2015-07-17 | 2022-11-02 | Sony Group Corporation | Imaging element, multilayer imaging element and solid-state imaging device |
| JP2017083218A (ja) * | 2015-10-26 | 2017-05-18 | 株式会社ブイ・テクノロジー | Ｘ線撮像素子の製造方法 |
| JP2017136241A (ja) * | 2016-02-04 | 2017-08-10 | 株式会社ブイ・テクノロジー | Ｘ線撮像素子の製造方法 |
| KR102517726B1 (ko) * | 2017-12-05 | 2023-04-03 | 엘지디스플레이 주식회사 | 디지털 엑스레이 검출기용 어레이 기판과 이를 포함하는 디지털 엑스레이 검출기 및 그 제조 방법 |
| CN114342079B (zh) * | 2019-08-30 | 2025-01-07 | 株式会社日本显示器 | 检测装置 |
| JP7446786B2 (ja) * | 2019-11-18 | 2024-03-11 | 株式会社ジャパンディスプレイ | 検出装置及び表示装置 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11186532A (ja) * | 1997-12-22 | 1999-07-09 | Canon Inc | 光センサー |
| JP2006189296A (ja) * | 2005-01-05 | 2006-07-20 | Konica Minolta Holdings Inc | 放射線検出装置およびその製造方法 |
| JP2006343277A (ja) * | 2005-06-10 | 2006-12-21 | Canon Inc | 放射線検出装置及び放射線撮像システム |
| WO2009139209A1 (ja) * | 2008-05-12 | 2009-11-19 | コニカミノルタエムジー株式会社 | 放射線画像検出器および放射線画像検出器の製造方法 |
| WO2010106884A1 (ja) * | 2009-03-19 | 2010-09-23 | コニカミノルタエムジー株式会社 | シンチレータパネル |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5132539A (en) * | 1991-08-29 | 1992-07-21 | General Electric Company | Planar X-ray imager having a moisture-resistant sealing structure |
| US20030191693A1 (en) * | 2002-04-08 | 2003-10-09 | Itamar Aphek | System and method for conducting an advertising business |
| JPWO2008102645A1 (ja) * | 2007-02-23 | 2010-05-27 | コニカミノルタエムジー株式会社 | シンチレータパネル及び放射線イメージセンサ |
| US7605374B2 (en) * | 2007-03-27 | 2009-10-20 | General Electric Company | X-ray detector fabrication methods and apparatus therefrom |
| US7759628B2 (en) * | 2007-06-22 | 2010-07-20 | Seiko Epson Corporation | Detection device and electronic apparatus having plural scanning lines, detection lines, power supply lines and plural unit circuits arranged on a substrate |
| JP5142943B2 (ja) * | 2007-11-05 | 2013-02-13 | キヤノン株式会社 | 放射線検出装置の製造方法、放射線検出装置及び放射線撮像システム |
| JP5791281B2 (ja) * | 2010-02-18 | 2015-10-07 | キヤノン株式会社 | 放射線検出装置及び放射線検出システム |
| JP2012182346A (ja) * | 2011-03-02 | 2012-09-20 | Konica Minolta Medical & Graphic Inc | 放射線画像撮影装置 |
-
2011
- 2011-05-30 JP JP2011119918A patent/JP5874201B2/ja not_active Expired - Fee Related
-
2012
- 2012-04-30 US US13/460,163 patent/US20120305777A1/en not_active Abandoned
- 2012-05-23 CN CN201210161768.8A patent/CN102810546B/zh not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11186532A (ja) * | 1997-12-22 | 1999-07-09 | Canon Inc | 光センサー |
| JP2006189296A (ja) * | 2005-01-05 | 2006-07-20 | Konica Minolta Holdings Inc | 放射線検出装置およびその製造方法 |
| JP2006343277A (ja) * | 2005-06-10 | 2006-12-21 | Canon Inc | 放射線検出装置及び放射線撮像システム |
| WO2009139209A1 (ja) * | 2008-05-12 | 2009-11-19 | コニカミノルタエムジー株式会社 | 放射線画像検出器および放射線画像検出器の製造方法 |
| WO2010106884A1 (ja) * | 2009-03-19 | 2010-09-23 | コニカミノルタエムジー株式会社 | シンチレータパネル |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012247327A (ja) | 2012-12-13 |
| JP5874201B2 (ja) | 2016-03-02 |
| US20120305777A1 (en) | 2012-12-06 |
| CN102810546A (zh) | 2012-12-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20160909 Address after: Kanagawa Applicant after: SONY SEMICONDUCTOR SOLUTIONS Corp. Address before: Tokyo, Japan Applicant before: Sony Corp. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170301 |