JP2012233876A5 - - Google Patents

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Publication number
JP2012233876A5
JP2012233876A5 JP2012040395A JP2012040395A JP2012233876A5 JP 2012233876 A5 JP2012233876 A5 JP 2012233876A5 JP 2012040395 A JP2012040395 A JP 2012040395A JP 2012040395 A JP2012040395 A JP 2012040395A JP 2012233876 A5 JP2012233876 A5 JP 2012233876A5
Authority
JP
Japan
Prior art keywords
die
cap
fet
frit material
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012040395A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012233876A (ja
Filing date
Publication date
Priority claimed from US13/096,710 external-priority patent/US8536626B2/en
Application filed filed Critical
Publication of JP2012233876A publication Critical patent/JP2012233876A/ja
Publication of JP2012233876A5 publication Critical patent/JP2012233876A5/ja
Pending legal-status Critical Current

Links

JP2012040395A 2011-04-28 2012-02-27 電子ｐＨセンサ・ダイ・パッケージ Pending JP2012233876A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/096,710 US8536626B2 (en) 2011-04-28 2011-04-28 Electronic pH sensor die packaging
US13/096,710 2011-04-28

Publications (2)

Publication Number Publication Date
JP2012233876A JP2012233876A (ja) 2012-11-29
JP2012233876A5 true JP2012233876A5 (OSRAM) 2015-04-16

Family

ID=45930550

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012040395A Pending JP2012233876A (ja) 2011-04-28 2012-02-27 電子ｐＨセンサ・ダイ・パッケージ

Country Status (3)

Country Link
US (1) US8536626B2 (OSRAM)
EP (1) EP2518483B1 (OSRAM)
JP (1) JP2012233876A (OSRAM)

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US8828207B2 (en) 2012-06-13 2014-09-09 Honeywell International Inc. Deep sea pH sensor
US8701496B1 (en) * 2013-02-27 2014-04-22 Honeywell International Inc. Systems and methods for a pressure sensor having a two layer die structure
US10151647B2 (en) 2013-06-19 2018-12-11 Honeywell International Inc. Integrated SOI pressure sensor having silicon stress isolation member
US9671362B2 (en) * 2013-07-29 2017-06-06 Honeywell International Inc. ph sensor with bonding agent disposed in a pattern
US9664641B2 (en) 2013-07-29 2017-05-30 Honeywell International Inc. pH sensor with substrate or bonding layer configured to maintain piezoresistance of the ISFET die
CA2933321C (en) * 2013-09-18 2021-11-09 Suprasensor Technologies, Llc Molecular receptor-based chemical field-effect transistor (chemfet) devices, systems, and methods for in-situ nitrate monitoring in field soils
US9759679B2 (en) * 2014-02-07 2017-09-12 Honeywell International Inc. Fluid sensor with backside of sensor die contacting header
US9442090B2 (en) * 2014-03-27 2016-09-13 Honeywell International Inc. Magnetic stimulus of ISFET-based sensor to enable trimming and self-compensation of sensor measurement errors
US9140662B1 (en) * 2014-08-19 2015-09-22 Honeywell International Inc. Preventing stray currents in sensors in conductive media
US9470652B1 (en) * 2015-09-15 2016-10-18 Freescale Semiconductor, Inc. Sensing field effect transistor devices and method of their manufacture
US9899290B2 (en) 2016-03-23 2018-02-20 Nxp Usa, Inc. Methods for manufacturing a packaged device with an extended structure for forming an opening in the encapsulant
CN106248761A (zh) * 2016-08-01 2016-12-21 严媚 一种高灵敏度酸碱值生物传感器芯片
TWI642171B (zh) * 2017-11-09 2018-11-21 友達光電股份有限公司 感測裝置
WO2019226831A1 (en) * 2018-05-22 2019-11-28 Gate Scientific, Inc. Wirelessly sensing properties of a closed environment and devices thereof
JP7269559B2 (ja) * 2018-07-12 2023-05-09 浜松ホトニクス株式会社 匂いセンサ及び匂いセンサの製造方法
JP7329854B2 (ja) * 2018-09-04 2023-08-21 学校法人早稲田大学 水中通信装置及び水中通信方法
WO2021087569A1 (en) * 2019-11-06 2021-05-14 Commonwealth Scientific And Industrial Research Organisation A multi-layered electrode for sensing ph

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