JP2012233876A - 電子ｐＨセンサ・ダイ・パッケージ - Google Patents

電子ｐＨセンサ・ダイ・パッケージ Download PDF

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Publication number
JP2012233876A
JP2012233876A JP2012040395A JP2012040395A JP2012233876A JP 2012233876 A JP2012233876 A JP 2012233876A JP 2012040395 A JP2012040395 A JP 2012040395A JP 2012040395 A JP2012040395 A JP 2012040395A JP 2012233876 A JP2012233876 A JP 2012233876A
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JP
Japan
Prior art keywords
sensor
substrate
die
protective layer
frit material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012040395A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012233876A5 (OSRAM
Inventor
Gregory C Brown
グレゴリー・シー・ブラウン
H Rahn Curtis
カーティス・エイチ・ラン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of JP2012233876A publication Critical patent/JP2012233876A/ja
Publication of JP2012233876A5 publication Critical patent/JP2012233876A5/ja
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Computer Hardware Design (AREA)
  • Analytical Chemistry (AREA)
  • Molecular Biology (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Pressure Sensors (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Measuring Fluid Pressure (AREA)
JP2012040395A 2011-04-28 2012-02-27 電子ｐＨセンサ・ダイ・パッケージ Pending JP2012233876A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/096,710 2011-04-28
US13/096,710 US8536626B2 (en) 2011-04-28 2011-04-28 Electronic pH sensor die packaging

Publications (2)

Publication Number Publication Date
JP2012233876A true JP2012233876A (ja) 2012-11-29
JP2012233876A5 JP2012233876A5 (OSRAM) 2015-04-16

Family

ID=45930550

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012040395A Pending JP2012233876A (ja) 2011-04-28 2012-02-27 電子ｐＨセンサ・ダイ・パッケージ

Country Status (3)

Country Link
US (1) US8536626B2 (OSRAM)
EP (1) EP2518483B1 (OSRAM)
JP (1) JP2012233876A (OSRAM)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015025802A (ja) * 2013-07-29 2015-02-05 ハネウェル・インターナショナル・インコーポレーテッド ＩＳＦＥＴダイのピエゾ抵抗を維持するように構成された基板又は接合層を有するｐＨセンサ
JP2015025801A (ja) * 2013-07-29 2015-02-05 ハネウェル・インターナショナル・インコーポレーテッド パターン状に配置される接合剤を有するｐＨセンサ
JP2015190980A (ja) * 2014-03-27 2015-11-02 ハネウェル・インターナショナル・インコーポレーテッド センサ測定誤差のトリミングおよび自己補正を可能にするｉｓｆｅｔベースのセンサの磁気的刺激
JP2016045201A (ja) * 2014-08-19 2016-04-04 ハネウェル・インターナショナル・インコーポレーテッド 導電性媒体におけるセンサ内の迷走電流防止
WO2020012800A1 (ja) * 2018-07-12 2020-01-16 浜松ホトニクス株式会社 匂いセンサ及び匂いセンサの製造方法
WO2020050183A1 (ja) * 2018-09-04 2020-03-12 学校法人早稲田大学 水中通信装置及び水中通信方法
JP2023500333A (ja) * 2019-11-06 2023-01-05 コモンウェルス サイエンティフィック アンド インダストリアル リサーチ オーガナイゼーション ｐＨを検知するための多層電極

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9524957B2 (en) * 2011-08-17 2016-12-20 Intersil Americas LLC Back-to-back stacked dies
US8828207B2 (en) * 2012-06-13 2014-09-09 Honeywell International Inc. Deep sea pH sensor
US8701496B1 (en) * 2013-02-27 2014-04-22 Honeywell International Inc. Systems and methods for a pressure sensor having a two layer die structure
US10151647B2 (en) 2013-06-19 2018-12-11 Honeywell International Inc. Integrated SOI pressure sensor having silicon stress isolation member
CN110988085B (zh) * 2013-09-18 2023-07-04 克莱米特有限责任公司 基于分子受体的化学场效应晶体管
US9759679B2 (en) 2014-02-07 2017-09-12 Honeywell International Inc. Fluid sensor with backside of sensor die contacting header
US9470652B1 (en) 2015-09-15 2016-10-18 Freescale Semiconductor, Inc. Sensing field effect transistor devices and method of their manufacture
US9899290B2 (en) 2016-03-23 2018-02-20 Nxp Usa, Inc. Methods for manufacturing a packaged device with an extended structure for forming an opening in the encapsulant
CN106248761A (zh) * 2016-08-01 2016-12-21 严媚 一种高灵敏度酸碱值生物传感器芯片
TWI642171B (zh) * 2017-11-09 2018-11-21 友達光電股份有限公司 感測裝置
EP3796994A4 (en) * 2018-05-22 2022-03-02 Gate Scientific, Inc. WIRELESS MEASUREMENT OF PROPERTIES OF ENCLOSED ENVIRONMENT AND DEVICES THEREFORE

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JPS62183133A (ja) * 1986-02-07 1987-08-11 Hitachi Ltd 半導体装置
JP2002156357A (ja) * 2000-09-06 2002-05-31 Horiba Ltd ｐＨセンサ
JP2002296228A (ja) * 2001-03-30 2002-10-09 Seiko Epson Corp バイオセンサ
JP2006138761A (ja) * 2004-11-12 2006-06-01 Univ Waseda 半導体センサチップ及び半導体センシング装置
JP2008542733A (ja) * 2005-05-30 2008-11-27 メトラー−トレド アクチェンゲゼルシャフト 電気化学センサ

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US4133735A (en) * 1977-09-27 1979-01-09 The Board Of Regents Of The University Of Washington Ion-sensitive electrode and processes for making the same
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KR101137736B1 (ko) * 2004-09-30 2012-04-24 각코호진 와세다다이가쿠 반도체 센싱용 전계 효과형 트랜지스터, 반도체 센싱디바이스, 반도체 센서 칩 및 반도체 센싱 장치
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JPS62183133A (ja) * 1986-02-07 1987-08-11 Hitachi Ltd 半導体装置
JP2002156357A (ja) * 2000-09-06 2002-05-31 Horiba Ltd ｐＨセンサ
JP2002296228A (ja) * 2001-03-30 2002-10-09 Seiko Epson Corp バイオセンサ
JP2006138761A (ja) * 2004-11-12 2006-06-01 Univ Waseda 半導体センサチップ及び半導体センシング装置
JP2008542733A (ja) * 2005-05-30 2008-11-27 メトラー−トレド アクチェンゲゼルシャフト 電気化学センサ

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015025802A (ja) * 2013-07-29 2015-02-05 ハネウェル・インターナショナル・インコーポレーテッド ＩＳＦＥＴダイのピエゾ抵抗を維持するように構成された基板又は接合層を有するｐＨセンサ
JP2015025801A (ja) * 2013-07-29 2015-02-05 ハネウェル・インターナショナル・インコーポレーテッド パターン状に配置される接合剤を有するｐＨセンサ
JP2015190980A (ja) * 2014-03-27 2015-11-02 ハネウェル・インターナショナル・インコーポレーテッド センサ測定誤差のトリミングおよび自己補正を可能にするｉｓｆｅｔベースのセンサの磁気的刺激
JP2016045201A (ja) * 2014-08-19 2016-04-04 ハネウェル・インターナショナル・インコーポレーテッド 導電性媒体におけるセンサ内の迷走電流防止
JP7269559B2 (ja) 2018-07-12 2023-05-09 浜松ホトニクス株式会社 匂いセンサ及び匂いセンサの製造方法
JP2020008522A (ja) * 2018-07-12 2020-01-16 浜松ホトニクス株式会社 匂いセンサ及び匂いセンサの製造方法
WO2020012800A1 (ja) * 2018-07-12 2020-01-16 浜松ホトニクス株式会社 匂いセンサ及び匂いセンサの製造方法
US11921081B2 (en) 2018-07-12 2024-03-05 Hamamatsu Photonics K.K. Odor sensor and method for manufacturing odor sensor
WO2020050183A1 (ja) * 2018-09-04 2020-03-12 学校法人早稲田大学 水中通信装置及び水中通信方法
JPWO2020050183A1 (ja) * 2018-09-04 2021-08-26 学校法人早稲田大学 水中通信装置及び水中通信方法
JP7329854B2 (ja) 2018-09-04 2023-08-21 学校法人早稲田大学 水中通信装置及び水中通信方法
US12021569B2 (en) 2018-09-04 2024-06-25 Waseda University Underwater communication device and underwater communication method
JP2023500333A (ja) * 2019-11-06 2023-01-05 コモンウェルス サイエンティフィック アンド インダストリアル リサーチ オーガナイゼーション ｐＨを検知するための多層電極
JP7724213B2 (ja) 2019-11-06 2025-08-15 コモンウェルス サイエンティフィック アンド インダストリアル リサーチ オーガナイゼーション ｐＨを検知するための多層電極

Also Published As

Publication number Publication date
US8536626B2 (en) 2013-09-17
EP2518483B1 (en) 2015-01-21
EP2518483A2 (en) 2012-10-31
US20120273845A1 (en) 2012-11-01
EP2518483A3 (en) 2013-04-10

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