EP2518483A3 - Electronic pH sensor die packaging - Google Patents

Electronic pH sensor die packaging Download PDF

Info

Publication number
EP2518483A3
EP2518483A3 EP12157017.0A EP12157017A EP2518483A3 EP 2518483 A3 EP2518483 A3 EP 2518483A3 EP 12157017 A EP12157017 A EP 12157017A EP 2518483 A3 EP2518483 A3 EP 2518483A3
Authority
EP
European Patent Office
Prior art keywords
electronic
sensor
isfet
die
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP12157017.0A
Other languages
German (de)
French (fr)
Other versions
EP2518483A2 (en
EP2518483B1 (en
Inventor
Gregory C. Brown
Curtis H. Rahn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of EP2518483A2 publication Critical patent/EP2518483A2/en
Publication of EP2518483A3 publication Critical patent/EP2518483A3/en
Application granted granted Critical
Publication of EP2518483B1 publication Critical patent/EP2518483B1/en
Not-in-force legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Biochemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Molecular Biology (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Pressure Sensors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

A pH sensor is provided, comprising a substrate (40) and an ion sensitive field effect transistor (ISFET) die (10) with an ion sensing part (12) that responds to pH, wherein the ISFET die (10) is located over the substrate (40). The pH sensor also comprises a protective layer (14) formed over a portion of an outer surface of the ISFET die (10). Further, the pH sensor comprises a cover member (90) mechanically coupled to the protective layer, wherein the cover member (90) houses the ISFET die (10) and the substrate (40), and wherein the cover member (90) defines an opening (92) proximate to the ion sensing part (12).
EP12157017.0A 2011-04-28 2012-02-24 Electronic pH sensor die packaging and manufacturing method thereof Not-in-force EP2518483B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/096,710 US8536626B2 (en) 2011-04-28 2011-04-28 Electronic pH sensor die packaging

Publications (3)

Publication Number Publication Date
EP2518483A2 EP2518483A2 (en) 2012-10-31
EP2518483A3 true EP2518483A3 (en) 2013-04-10
EP2518483B1 EP2518483B1 (en) 2015-01-21

Family

ID=45930550

Family Applications (1)

Application Number Title Priority Date Filing Date
EP12157017.0A Not-in-force EP2518483B1 (en) 2011-04-28 2012-02-24 Electronic pH sensor die packaging and manufacturing method thereof

Country Status (3)

Country Link
US (1) US8536626B2 (en)
EP (1) EP2518483B1 (en)
JP (1) JP2012233876A (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9524957B2 (en) * 2011-08-17 2016-12-20 Intersil Americas LLC Back-to-back stacked dies
US8828207B2 (en) * 2012-06-13 2014-09-09 Honeywell International Inc. Deep sea pH sensor
US8701496B1 (en) * 2013-02-27 2014-04-22 Honeywell International Inc. Systems and methods for a pressure sensor having a two layer die structure
US10151647B2 (en) 2013-06-19 2018-12-11 Honeywell International Inc. Integrated SOI pressure sensor having silicon stress isolation member
US9671362B2 (en) * 2013-07-29 2017-06-06 Honeywell International Inc. ph sensor with bonding agent disposed in a pattern
US9664641B2 (en) 2013-07-29 2017-05-30 Honeywell International Inc. pH sensor with substrate or bonding layer configured to maintain piezoresistance of the ISFET die
ES2864693T3 (en) * 2013-09-18 2021-10-14 Climate Corp Procedure for attaching a membrane material to the gate of a molecular receptor-based field-effect transistor (CHEMFET)
US9759679B2 (en) 2014-02-07 2017-09-12 Honeywell International Inc. Fluid sensor with backside of sensor die contacting header
US9442090B2 (en) * 2014-03-27 2016-09-13 Honeywell International Inc. Magnetic stimulus of ISFET-based sensor to enable trimming and self-compensation of sensor measurement errors
US9140662B1 (en) * 2014-08-19 2015-09-22 Honeywell International Inc. Preventing stray currents in sensors in conductive media
US9470652B1 (en) * 2015-09-15 2016-10-18 Freescale Semiconductor, Inc. Sensing field effect transistor devices and method of their manufacture
US9899290B2 (en) 2016-03-23 2018-02-20 Nxp Usa, Inc. Methods for manufacturing a packaged device with an extended structure for forming an opening in the encapsulant
CN106248761A (en) * 2016-08-01 2016-12-21 严媚 A kind of high sensitivity pH-value biologic sensor chip
TWI642171B (en) * 2017-11-09 2018-11-21 友達光電股份有限公司 Sensing device
CN112533691A (en) * 2018-05-22 2021-03-19 科学之门有限公司 Wireless sensing of properties of enclosed environment and apparatus therefor
JP7269559B2 (en) 2018-07-12 2023-05-09 浜松ホトニクス株式会社 Odor sensor and method for manufacturing odor sensor
US12021569B2 (en) 2018-09-04 2024-06-25 Waseda University Underwater communication device and underwater communication method

Citations (5)

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Publication number Priority date Publication date Assignee Title
US5068205A (en) * 1989-05-26 1991-11-26 General Signal Corporation Header mounted chemically sensitive ISFET and method of manufacture
WO1998021572A1 (en) * 1996-11-15 1998-05-22 Rosemount Analytical Inc. Dorsal substrate guarded isfet sensor
US6117292A (en) * 1998-05-06 2000-09-12 Honeywell International Inc Sensor packaging having an integral electrode plug member
US20050170347A1 (en) * 2001-12-19 2005-08-04 Yuji Miyahara Potentiometric dna microarray, process for producing the same and method of analyzing nucleic acid
US20080012049A1 (en) * 2004-09-30 2008-01-17 Daisuke Niwa Semiconductor Sensing Field Effect Transistor, Semiconductor Sensing Device, Semiconductor Sensor Chip and Semiconductor Sensing Device

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US4133735A (en) * 1977-09-27 1979-01-09 The Board Of Regents Of The University Of Washington Ion-sensitive electrode and processes for making the same
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US4889612A (en) * 1987-05-22 1989-12-26 Abbott Laboratories Ion-selective electrode having a non-metal sensing element
US5221456A (en) * 1991-10-22 1993-06-22 Rosemount Inc. Insulated core electrode for ph sensor
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5068205A (en) * 1989-05-26 1991-11-26 General Signal Corporation Header mounted chemically sensitive ISFET and method of manufacture
WO1998021572A1 (en) * 1996-11-15 1998-05-22 Rosemount Analytical Inc. Dorsal substrate guarded isfet sensor
US6117292A (en) * 1998-05-06 2000-09-12 Honeywell International Inc Sensor packaging having an integral electrode plug member
US20050170347A1 (en) * 2001-12-19 2005-08-04 Yuji Miyahara Potentiometric dna microarray, process for producing the same and method of analyzing nucleic acid
US20080012049A1 (en) * 2004-09-30 2008-01-17 Daisuke Niwa Semiconductor Sensing Field Effect Transistor, Semiconductor Sensing Device, Semiconductor Sensor Chip and Semiconductor Sensing Device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ROY KNECHTEL: "Glass frit bonding: an universal technology for wafer level encapsulation and packaging", MICROSYSTEM TECHNOLOGIES ; MICRO AND NANOSYSTEMS INFORMATION STORAGE AND PROCESSING SYSTEMS, SPRINGER, BERLIN, DE, vol. 12, no. 1-2, 1 December 2005 (2005-12-01), pages 63 - 68, XP019349513, ISSN: 1432-1858, DOI: 10.1007/S00542-005-0022-X *

Also Published As

Publication number Publication date
US20120273845A1 (en) 2012-11-01
EP2518483A2 (en) 2012-10-31
US8536626B2 (en) 2013-09-17
JP2012233876A (en) 2012-11-29
EP2518483B1 (en) 2015-01-21

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