TWI642171B - Sensing device - Google Patents

Abstract

A sensing device is used for sensing ions in a liquid. The sensing device includes a substrate, a semiconductor pattern layer, a source, a drain, an insulating layer, a first sensing film, and a first reference electrode. The semiconductor pattern layer is disposed on a substrate. The semiconductor pattern layer includes a source region, a drain region, and a channel region. The source and the drain are electrically connected to the source region and the drain region, respectively. The insulating layer covers at least the channel region. The first sensing film is disposed on a part of the insulating layer on the first side of the semiconductor pattern layer. The first reference electrode faces the first sensing film on the first side of the semiconductor pattern layer. The first sensing film is located between the first side of the semiconductor pattern layer and the first reference electrode. There is a first gap between the first sensing film and the first reference electrode for containing a liquid.

Description

Sensing device

The present invention relates to a sensing device, and more particularly, to a sensing device for sensing ions in a liquid.

Ion-Sensitive Field-Effect Transistor (ISFET) is often used to sense the concentration of acid, alkali or neutral ions in the solution. The difference in the concentration of ions in the solution can make the ion sense The field effect transistor element generates different potential differences, so the potential difference can be used to calculate the ion concentration in the solution.

However, it is difficult to miniaturize ion-sensing field-effect transistor elements. Current ion-sensing field-effect transistor elements have the disadvantages of large volume, low sensitivity, and need to consume more energy and liquid to be measured. Therefore, there is currently a need for a method that can improve the performance of ion-sensing field effect transistor elements.

A sensing device of the present invention is used to sense ions in a liquid. The sensing device includes a substrate, a semiconductor pattern layer, a source, a drain, an insulating layer, a first A sensing film and a first reference electrode. The semiconductor pattern layer is disposed on the substrate. The semiconductor pattern layer includes a source region, a drain region, and a channel region. The channel region is located between the source region and the drain region. The source and the drain are respectively electrically connected to the source region and the drain region of the semiconductor pattern layer. The insulating layer is disposed on the substrate. The insulating layer covers at least the channel region. The first sensing film is disposed on the substrate. The first sensing film is disposed on a part of the insulating layer on the first side of the semiconductor pattern layer. The first reference electrode is disposed on the substrate. The first reference electrode faces the first sensing film on the first side of the semiconductor pattern layer. The first sensing film is located between the first side of the semiconductor pattern layer and the first reference electrode. There is a first gap between the first sensing film and the first reference electrode. The first gap is used to contain a liquid.

One of the objectives of the present invention is to reduce the amount of liquid to be measured when using the sensing device.

One of the objects of the present invention is to reduce the volume of the sensing device.

One of the objectives of the present invention is to reduce the energy consumed by the sensing device.

One of the objectives of the present invention is to improve the sensitivity of the sensing device.

In order to make the above features and advantages of the present invention more comprehensible, embodiments are hereinafter described in detail with reference to the accompanying drawings.

10, 20, 30‧‧‧ sensor devices

100‧‧‧Semiconductor material layer

102‧‧‧Drain

103, 105‧‧‧ lightly doped regions

104‧‧‧Channel area

106‧‧‧Source area

110‧‧‧Semiconductor pattern layer

120‧‧‧ Insulation

130, 130A‧‧‧first sensing film

130B‧‧‧Second sensing film

142‧‧‧Drain

144‧‧‧Source

150, 150A‧‧‧First reference electrode

150B‧‧‧Second reference electrode

152‧‧‧Conductive material

160‧‧‧ protective layer

B‧‧‧ underside

D1‧‧‧Side view direction

D2‧‧‧ direction

L‧‧‧ liquid to be tested

O1, O2‧‧‧‧open

S1‧‧‧First side

S2‧‧‧Second side

SB‧‧‧ substrate

T‧‧‧Top

W 、 WA‧‧‧First Clearance

WB‧‧‧Second Gap

1A to 1H are schematic diagrams of a sensing device according to an embodiment of the present invention.

FIG. 2 is a schematic diagram of a sensing device according to an embodiment of the invention.

FIG. 3 is a schematic diagram of a sensing device according to an embodiment of the invention.

In the following, a plurality of embodiments of the present invention will be disclosed graphically. For the sake of clarity, many practical details will be described in the following description. However, it should be understood that these practical details are not applied to limit the invention. That is, in some embodiments of the present invention, these practical details are unnecessary. In addition, in order to simplify the drawings, some conventional structures and elements will be omitted in the drawings or they will be simply illustrated.

In the drawings, the thicknesses of layers, films, panels, regions, etc. are exaggerated for clarity. Throughout the description, the same reference numerals denote the same elements. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to a physical and / or electrical connection. However, the electrical connection is such that there are other elements between the two elements.

It should be understood that, although the terms "first" and "second" may be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, and / or sections should not be affected Limitations of these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section.

The terminology used herein is for the purpose of describing particular embodiments of the invention and is not intended to limit the invention. For example, the use of "a," "an," and "the" in this article are not a limitation of the singular or plural form. As used herein, "or" means "and / or". As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. It should also be understood that when used in this specification, the term "including" or "comprising" specifies the stated features, regions, wholes, steps, operations, presence of elements and / or components, but does not exclude one or more other features , Area, whole, step, operation, element, part, and / or combination thereof.

In addition, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe the relationship of one element to another element, as shown. It should be understood that relative terms are intended to include different orientations of the device in addition to the orientation shown in the figures. For example, if the device in one of the figures is turned over, elements described as being on the "lower" side of other elements would then be oriented on "upper" sides of the other elements. Thus, the exemplary term "down" may include orientations of "down" and "up", depending on the particular orientation of the drawings. Similarly, if the device in one of the figures is turned over, elements described as "below" or "beneath" other elements would then be oriented "above" the other elements. Thus, the exemplary terms "below" or "below" may include orientations above and below.

As used herein, "about" or "substantially" includes the stated value and an average value within an acceptable deviation range of a particular value determined by one of ordinary skill in the art, taking into account the measurement in question and measurement-related errors. Specific quantity (i.e. measurement system limits). For example, "about" may mean within one or more standard deviations of the stated value, or within ± 30%, ± 20%, ± 10%, ± 5%. Furthermore, "about" or "substantially" used herein may select a more acceptable range of deviations or standard deviations according to optical properties, etching properties, or other properties, and all properties may not be applied without one standard deviation.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted to have meanings consistent with their meanings in the context of the related art and the present invention, and will not be interpreted as idealized or excessive Formal meaning unless explicitly defined as such in this article.

1A to 1H are schematic diagrams of a sensing device according to an embodiment of the present invention.

Referring to FIG. 1A, a substrate SB is provided. A semiconductor material layer 100 is formed on the substrate SB. In some embodiments, the semiconductor material layer 100 may be a single-layer or multi-layer structure, and the material thereof includes amorphous silicon, polycrystalline silicon, microcrystalline silicon, nanocrystalline silicon, single crystal silicon, nanocarbon tubes, and oxide semiconductor materials. (For example: Indium-Gallium-Zinc Oxide (IGZO), Zinc Oxide (ZnO) Tin Oxide (SnO), Indium-Zinc Oxide (IZO), Gallium-Zinc Oxide, GZO), Zinc-Tin Oxide (ZTO), Indium-Tin Oxide (ITO) or other suitable materials), organic semiconductor materials or other suitable materials, or a combination of the foregoing materials.

Referring to FIG. 1B, the semiconductor material layer 100 is patterned to form a semiconductor pattern layer 110. A method of forming the semiconductor pattern layer 110 is exemplified by a lithography process, but is not limited thereto. In other embodiments, the method for forming the semiconductor pattern layer 110 includes a screen printing method, an inkjet printing method, an exposure and development method, or other suitable methods. In this embodiment, a source region 106, a drain region 102, and a channel region 104 can be selectively formed in the semiconductor pattern layer 110. The channel region 104 is located between the source region 106 and the drain region 102. For example, an N-type doping process may be selectively performed on the semiconductor pattern layer 110. For example, a dopant is implanted in the source region 106 and the drain region 102 to make the semiconductor pattern layer 110. The source region 106 and the drain region 102 form an N-type doped semiconductor, and the channel region 104 is located between the source region 106 and the drain region 102. In some embodiments, the source region 106, the drain region 102, and the channel region 104 do not substantially overlap each other in a direction D2 perpendicular to the substrate SB, but are not limited thereto. In some embodiments, at least one of the source region 106 and the drain region 102 may partially overlap the channel region 104 in a direction D2 perpendicular to the substrate SB. In other embodiments, the source region 106 and the drain region 102 may be P-doped semiconductors. In some embodiments, the channel region 104 may include an intrinsic semiconductor or a semiconductor of opposite polarity to the source region 106 / drain region 102 (for example, a P-type doped semiconductor), but the present invention is not limited thereto. Limited. In some embodiments, the semiconductor pattern layer 110 may be an intrinsic semiconductor, and may have sufficient conductivity to be used without performing an additional doping process.

Referring to FIG. 1C, lightly doped regions 103 and 105 can be selectively formed on the semiconductor pattern layer 110, for example, at a position between the channel region 104 and the drain region 102. A lightly doped region 103 is formed, and a lightly doped region 105 is formed at a position between the channel region 104 and the source region 106. For example, the semiconductor pattern layer 110 can be selectively doped again to form a lightly doped region 103 at a position between the channel region 104 and the drain region 102, and the channel region 104 and the source region 106 can be formed. The lightly doped regions 105 are formed at the positions therebetween, but are not limited thereto. In other embodiments, the lightly doped regions 103 and 105 may not be included. The lightly doped regions 103 and 105 include, for example, N-type doped semiconductors, and the dopant concentration in the lightly doped regions 103 and 105 is smaller than the dopant in the source region 106 and the drain region 102. )concentration. In other embodiments, when the source region 106 and the drain region 102 may be P-type doped semiconductors, the lightly doped regions 103 and 105 are also P-type doped semiconductors, and the lightly doped regions 103 and 105 are The dopant concentration is less than the dopant concentration in the source region 106 and the drain region 102.

In this embodiment, for example, the source region 106 and the drain region 102 are formed first, and then the lightly doped region 103 and the lightly doped region 105 are formed, but the present invention is not limited thereto. In other embodiments, the lightly doped region 103 and the lightly doped region 105 may be formed first, and then the drain region 102 and the source region 106 may be formed in the lightly doped region 103 and the lightly doped region 105, respectively, or Yes, the lightly doped region 103, the lightly doped region 105, the source region 106, and the drain region 102 can be formed in a single doping step. In other embodiments, the aforementioned doping process may also use P-type dopants or other suitable dopants.

Referring to FIG. 1D, an insulating layer 120 is formed on the substrate SB. The insulating layer 120 covers at least the channel region 104 of the semiconductor pattern layer 110. In this embodiment, the insulating layer 120 may also cover other parts of the semiconductor pattern layer 110, such as: a drain region 102, a lightly doped region (optional) 103, a lightly doped region (optional) 105, and At least one of the source regions 106. Preferably, the insulating layer 120 completely covers the semiconductor pattern layer 110. The insulating layer 120 may be a single-layer or multi-layer structure, and the material thereof includes silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, or other suitable materials.

The included angle between the bottom surface B of the semiconductor pattern layer 110 and the first side surface S1 or the second side surface S2 of the semiconductor pattern layer 110 may be less than 60 degrees, but greater than 0 degrees. In this embodiment, the included angle between the bottom surface B and the first side surface S1 and the second side surface S2 of the semiconductor pattern layer 110 may be less than 60 degrees, but greater than 0 degrees. Therefore, the first side surface S1 of the semiconductor pattern layer 110 is located And the thickness of the insulating layer 120 on the second side S2 can be close to the thickness of the insulating layer 120 on the top surface T of the semiconductor pattern layer 110, which can improve the insulating layer 120 on the first side S1 and the second side S2. The problem of insufficient thickness.

Referring to FIG. 1E, a first sensing film 130 is formed on the substrate SB. The first sensing film 130 is disposed on a part of the insulating layer 120 on the first side surface S1 of the semiconductor pattern layer 110. The first sensing film 130 is at least correspondingly located on the channel region 104 on the first side S1 of the semiconductor pattern layer 110. In some embodiments, the first sensing film 130 is disposed at least on the channel region 104. For example, the first sensing film 130 is basically located on the channel region 104, and the first sensing film 130 can adsorb carriers (for example, positive ions) in the liquid L to be measured (labeled in the subsequent figure) ( For example, when no voltage is applied to the first sensing film 130 or a voltage is applied to the first sensing film 130), carriers (for example, negative ions, such as electrons) in the channel region 104 can be attracted, thereby affecting the threshold voltage of the sensing device. (Vth). From the change of the threshold voltage of the sensing device, the number of positive ions in the liquid to be measured can be calculated.

In some embodiments, a portion of the first sensing film 130 may be further disposed on the lightly doped region 103 and / or the lightly doped region 105, so that the degree of subsequent process deviation can be reduced or reduced. Therefore, the sensing device Can have higher process margins.

In some embodiments, one end of the first sensing film 130 extends toward the top surface T of the semiconductor pattern layer 110, and the first sensing film 130 may cover a portion of the insulating layer 120 on the top surface T of the semiconductor pattern layer 110 . The first sensing film 130 can attract carriers (eg, positive ions) in the liquid to be measured without applying voltage to the sensing device.

In some embodiments, the first sensing film 130 may have a single-layer or multi-layer structure, and its material includes yttrium oxide, tin dioxide, titanium dioxide, silicon nitride, tantalum pentoxide, aluminum oxide, and titanium oxide. Hafnium, hafnium dioxide, zirconium dioxide, hafnium dioxide or a combination of the above materials. In different embodiments, the first sensing film 130 of different materials can be used to adjust the attracting capacity of different carriers (eg, positive ions) of the liquid L (labeled in the subsequent figure) to be measured.

Referring to FIG. 1F, an opening O1 and an opening O2 are formed in the insulating layer 120 by a patterning process. The opening O1 and the opening O2 respectively expose a part of the drain region 102 and a part of the source region 106. In other words, the openings O1 and O2 partially overlap the drain region 102 and the source region 106, respectively.

In this embodiment, the first sensing film 130 is formed first, and then the opening O1 and the opening O2 are formed in the insulating layer 120, but the present invention is not limited thereto. In some embodiments, the openings O1 and O2 are formed before the first sensing film 130 is formed.

The shapes of the openings O1 and O2 include, for example, rectangular, circular, ladder, triangular, or other geometric shapes. The present invention does not specifically limit the openings O1 and O2. shape.

Referring to FIG. 1G, a drain electrode 142 and a source electrode 144 are formed in the opening O1 and the opening O2, respectively. The drain electrode 142 and the source electrode 144 are respectively electrically connected to the drain region 102 and the source region 106 of the semiconductor pattern layer 110. In some embodiments, part of the drain electrode 142 and the source electrode 144 respectively extend outward from the opening O1 and the opening O2 and are connected to other circuits (not shown).

Referring to FIGS. 1G and 1H, the first reference electrode 150 is disposed on the substrate SB. The first reference electrode 150 faces the first sensing film 130 on the first side S1 of the semiconductor pattern layer 110. The first sensing film 130 is located between the first side surface S1 of the semiconductor pattern layer 110 and the first reference electrode 150. There is a first gap W between the first sensing film 130 and the first reference electrode 150 to receive the liquid to be measured L (labeled in the subsequent figure). In some embodiments, the first reference electrode 150 is defined by a lithography process, so that a smaller first gap W can be obtained. In some embodiments, the first gap W is, for example, less than 100 micrometers. Here, 100 micrometers refers to, for example, the shortest distance between the first sensing film 130 and the first reference electrode 150. In some embodiments, the first gap W is, for example, 3 micrometers, 10 micrometers, 20 micrometers, 30 micrometers, 40 micrometers, 50 micrometers, 60 micrometers, 70 micrometers, 80 micrometers, 90 micrometers, or other suitable gaps smaller than 100 micrometers. . The smaller first gap W not only increases the sensing capability of the sensing device, but also reduces the amount of liquid to be measured when the sensing device is used. In addition, a smaller first gap W can also reduce the size of the sensing device.

In some embodiments, in the side view direction D1, the area of the first reference electrode 150 is wider than the area of the first sensing film 130, which can cause the degree of deviation of different device processes. It can be reduced or reduced, and the yield of the sensing device can be improved. For example, in the side view direction D1, the first reference electrode 150 and the first sensing film 130 overlap at least 50%. Preferably, the first reference electrode 150 and the first sensing film 130 completely overlap, and the first The reference electrode 150 can selectively exceed the size of the first sensing film 130. Since the reference electrode 150 needs to correspond to the sensing film 130 and the channel region 104 in the side view direction D1, if there is a reference electrode with a larger area or a larger size, 150, the manufacturing margin of the sensing device can be increased, but it is not limited to this. The side view direction D1 is, for example, a direction substantially parallel to the bottom surface B of the semiconductor pattern layer 110 and a direction substantially parallel to the shortest connecting line between the first sensing film 130 and the first reference electrode 150.

In some embodiments, the material of the first reference electrode 150 includes titanium, palladium, silver, silver chloride, or other suitable materials or a stacked structure of at least two of the foregoing materials. In some embodiments, the material of the surface of the first reference electrode 150 includes titanium, palladium, silver, silver chloride, or other suitable materials or a stacked structure of at least two of the foregoing materials, and the inside of the first reference electrode 150 has other types. The conductive material 152 is, for example, copper, aluminum, molybdenum, titanium, or other suitable conductive materials or a stacked structure of at least two of the foregoing materials, thereby reducing the cost required for the materials. In other embodiments, in some embodiments, the material of the surface of the first reference electrode 150 includes a stacked structure of at least two materials of titanium, palladium, silver, and silver chloride, and the inside of the first reference electrode 150 also has other types of Insulating materials, such as: inorganic materials, organic materials, or other suitable materials.

In this embodiment, the drain electrode 142 and the source electrode 144 are formed at the same time, and the first reference electrode 150 is formed after or before the drain electrode 142 and the source electrode 144 are formed. In some embodiments, the drain electrode 142, the source electrode 144, and the conductive material 152 may be the same. Shadow etching is performed, and after forming the drain electrode 142, the source electrode 144, and the conductive material 152, a material on the surface of the first reference electrode 150 is formed. In some embodiments, considering the response requirements of the conductive material 152 inside the reference electrode 150 to the ions (eg, positive ions) of the liquid L (labeled in the subsequent figure) to be measured, the drain electrode 142 and the source electrode are used. 144 different materials. Therefore, after the drain electrode 142 and the source electrode 144 are fabricated, the surface material of the reference electrode 150 and the conductive material 152 inside the reference electrode 150 are fabricated.

Please refer to FIG. 1H again, a protective layer 160 may be selectively formed to cover a part of the substrate SB, the insulating layer 120, the source 144 and the drain 142, a part of the first sensing film 130 and a part of the first reference electrode 150. This protects most of the components in the sensing device, and can increase the reliability of the sensing device. The protective layer 160 does not cover another part of the first sensing film 130 and another part of the first reference electrode 150. For example, as shown in FIG. 1H, the protective layer 160 does not cover the first sensing film 130 and the first reference electrode. 150 facing parts. The protective layer 160 may be a single-layer or multi-layer structure, and its material includes organic materials (for example: epoxy resin, photoresist, polyimide, or other suitable materials), inorganic materials (for example, silicon oxide, silicon nitride, Nitrogen oxides, alumina or other suitable materials). After the protective layer 160 is formed, the sensing device 10 is substantially completed. In other embodiments, if the materials used in the sensing device 10 can make the sensing device 10 less need to consider reliability issues, the sensing device 10 may not include the protective layer 160.

The liquid to be measured L is filled in the first gap W between the first sensing film 130 and the first reference electrode 150. The liquid L to be measured includes acidic, alkaline or neutral ions, and these ions will react with or bond with the surface of the first sensing film 130 to form a potential on the surface of the first sensing film 130. The first sensing film 130 is used as the sensing device 10, for example. The gate potential of the first sensing film 130 may cause carriers in the semiconductor pattern layer 110 to move. Furthermore, the semiconductor pattern layer 110, the insulating layer 120, the first sensing film 130, the source electrode 144, and the drain electrode 142 in the structure of the sensing device 10 of this embodiment are similar to a top gate transistor. The measurement film 130 is located on the side of the semiconductor pattern layer 110. Therefore, in the structure of the sensing device 10 of this embodiment, the semiconductor pattern layer 110, the insulating layer 120, the first sensing film 130, the source 144, and the drain 142 can also use other types of top gate transistors.

FIG. 2 is a schematic diagram of a sensing device according to an embodiment of the invention. It must be noted here that the embodiment of FIG. 2 follows the component numbers and parts of the embodiments of FIGS. 1A to 1H, in which the same or similar reference numerals are used to indicate the same or similar components, and the same technical content is omitted. Instructions. For the description of the omitted parts, reference may be made to the foregoing embodiments, and details are not described herein.

Please refer to FIG. 2, the sensing device 20 includes a first sensing film 130A and a second sensing film 130B disposed on a substrate SB. The first sensing film 130A is disposed on a part of the insulating layer 120 on the second side surface S2 of the semiconductor pattern layer 110. The second sensing film 130B is disposed on a part of the insulating layer 120 on the second side surface S1 of the semiconductor pattern layer 110. The first sensing film 130A and the second sensing film 130B are separated from each other.

The first sensing film 130A is at least correspondingly located on the channel region 104 of the first side surface S1 of the semiconductor pattern layer 110. The second sensing film 130B is at least correspondingly located on the channel region 104 of the second side surface S2 of the semiconductor pattern layer 110. In some embodiments, one end of the first sensing film 130A and / or one end of the second sensing film 130B extends toward the top surface T of the semiconductor pattern layer 110, and the first sensing film 130A and / or the second sensing film 130A Film 130B A part of the insulating layer 120 on the top surface T of the semiconductor pattern layer 110 is covered.

The first reference electrode 150A and the second reference electrode 150B are disposed on the substrate SB. The first reference electrode 150A faces the first sensing film 130A on the first side surface S1 of the semiconductor pattern layer 110, and the first sensing film 130A is located between the first side surface S1 of the semiconductor pattern layer 110 and the first reference electrode 150A. The second reference electrode 150B faces the second sensing film 130B on the second side surface S2 of the semiconductor pattern layer 110, and the second sensing film 130B is located between the second side surface S2 of the semiconductor pattern layer 110 and the second reference electrode 150B. The second reference electrode 150B and the first reference electrode 150A are separated from each other. In some embodiments, the first reference electrode 150A and the second reference electrode 150B include substantially the same material and are formed in the same lithographic etching process. In some embodiments, the materials and / or processes of the second reference electrode 150B may be selected from the materials and processes of the first reference electrode 150, and the two may be substantially the same or different.

In some embodiments, in the side view direction D1, the area of the first reference electrode 150A is wider than that of the first sensing film 130A, and the area of the second reference electrode 130B is wider than that of the second sensing film 130B. Therefore, the degree of process deviation of different components can be reduced or reduced, and the yield of the sensing device can be improved. For example, in the side view direction D1, the first reference electrode 150A and the first sensing film 130A overlap at least 50%, and the second reference electrode 150B and the second sensing film 130B overlap at least 50%. Preferably, the first A reference electrode 150A completely overlaps the first sensing film 130A, and the first reference electrode 150 can selectively exceed the size of the first sensing film 130 and / or the second reference electrode 150B and the second sensing film 130B completely overlap, And the second reference electrode 150B can be selected The size of the second sensing film 130B is larger than that of the second sensing film 130B. In the side view direction D1, the first reference electrode 150A needs to correspond to the first sensing film 130A and the first side S1 of the channel region 104. The two sensing films 130B and the second side S2 of the channel region 104 correspond to each other. If there are a first reference electrode 150A and a second reference electrode 150B with a wide area or a large size, the manufacturing margin of the sensing device can be increased. But it is not limited to this. The side view direction D1 is, for example, a direction substantially parallel to the shortest connection line between the first sensing film 130A and the first reference electrode 150A or substantially parallel to the direction between the second sensing film 130B and the second reference electrode 150B. The direction of the shortest connection.

There is a first gap WA between the first sensing film 130A and the first reference electrode 150A to receive the liquid to be measured. There is a second gap WB between the second sensing film 130B and the second reference electrode 150B to receive the liquid L to be measured. In some embodiments, the first sensing film 130A and the second sensing film 130B can perform sensing at different times, for example, the liquid to be measured L only fills the first gap WA or only fills the second gap WB. . In some embodiments, the first sensing film 130A and the second sensing film 130B can perform sensing at the same time. For example, the liquid L to be measured is filled in the first gap WA and the second gap WB, which can increase the sensing. The sensing capability of the device 20.

In some embodiments, the sensing device 20 may optionally include a connection film 170. The connection film 170 may connect the first sensing film 130A and the second sensing film 130B, and the liquid L to be measured fills the first gap WA and the first sensing film 130B. In the two-gap WB, a potential can be formed on the first sensing film 130A and the second sensing film 130B, and at the same time, the carriers in the semiconductor pattern layer 110 are moved, so that the sensing intensity (or sensitivity) can be increased. In some In the embodiment, the connection film 170, the first sensing film 130A, and the second sensing film 130B include, for example, substantially the same material and are formed in the same lithographic etching process, but are not limited thereto. In other embodiments, the connection film 170 may use a different material and / or a different lithographic etching process than the first sensing film 130A and the second sensing film 130B.

In some embodiments, the sensing device 20 may optionally include a protective layer 160. The protective layer 160 covers part of the substrate SB, the insulating layer 120, the source 144 and the drain 142, part of the first sensing film 130A, part of the first reference electrode 150A, part of the second sensing film 130B, and part of the first Two reference electrodes 150B. The protective layer 160 does not cover another part of the first sensing film 130A, another part of the first reference electrode 150A, another part of the second sensing film 130B, and another part of the second reference electrode 150B, such as: As shown in FIG. 2, the protective layer 160 does not cover a portion facing the first sensing film 130A and the first reference electrode 150A and a portion facing the second sensing film 130B and the second reference electrode 150B.

FIG. 3 is a schematic diagram of a sensing device according to an embodiment of the invention. It must be noted here that the embodiment of FIG. 3 inherits the component numbers and parts of the embodiment of FIG. 2, in which the same or similar reference numerals are used to represent the same or similar components, and the description of the same technical content is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and details are not described herein.

Please refer to FIG. 3. The difference between the sensing device 30 and the sensing device 20 in FIG. 2 is that the sensing device 30 is standing on the substrate SB. In the direction D2 perpendicular to the projection on the substrate SB, the source region 106, the drain region 102, and the channel region 104 at least partially overlap each other. Furthermore, the source electrode 144 may be selectively connected to the source region 106 through the opening O1 or the opening O2, and / or the drain electrode 142 may be selectively closed through the opening O1 or The opening O2 is electrically connected to the drain region 102, but is not limited thereto.

In this embodiment, the source region 106 may be located between the channel region 104 and the substrate SB, but the present invention is not limited thereto. In other embodiments, the drain region 102 may be located between the channel region 104 and the substrate SB.

Although in this embodiment, the sensing device 30 includes the first sensing film 130A, the second sensing film 130B, the first reference electrode 150A, and the second reference electrode 150B, the invention is not limited thereto. The sensing device 30 may not include the second sensing film 130B and the second reference electrode 150B. For the materials and / or structures of the first sensing film 130A, the second sensing film 130B, the first reference electrode 150A, and the second reference electrode 150B, reference may be made to the related descriptions of the foregoing embodiments.

In summary, at least one embodiment of the present invention can reduce the amount of liquid to be measured during use. At least one embodiment of the present invention can reduce the volume of the sensing device. At least one embodiment of the present invention can reduce the energy consumed by the sensing device. At least one embodiment of the present invention can improve the sensitivity of the sensing device.

Although the present invention has been disclosed as above with the examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some modifications and retouching without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be determined by the scope of the attached patent application.

Claims (14)

A sensing device is used for sensing ions in a liquid. The sensing device includes: a substrate; a semiconductor pattern layer disposed on the substrate; the semiconductor pattern layer includes a source region and a drain electrode; And a channel region, the channel region is located between the source region and the drain region; a source and a drain electrode are electrically connected to the source region and the drain region of the semiconductor pattern layer, respectively; An insulating layer is disposed on the substrate, wherein the insulating layer covers at least the channel region; a first sensing film is disposed on the substrate, and the first sensing film is disposed on the semiconductor pattern layer. A portion of the insulating layer on a first side; and a first reference electrode disposed on the substrate, wherein the first reference electrode faces the first sense on the first side of the semiconductor pattern layer And a first sensing film is located between the first side of the semiconductor pattern layer and the first reference electrode, wherein there is a first gap between the first sensing film and the first reference electrode To hold the liquid. The sensing device according to item 1 of the patent application scope, wherein one end of the first sensing film extends to a top surface of the semiconductor pattern layer, and the first sensing film covers the top of the semiconductor pattern layer. Part of the surface is on the insulating layer. The sensing device according to item 1 of the scope of patent application, further comprising: a second sensing film disposed on the substrate, wherein the second sensing film is disposed on a second side surface of the semiconductor pattern layer Part of the insulating layer, and the first sensing film and the second sensing film are separated from each other; and a second reference electrode is disposed on the substrate, wherein the second reference electrode faces the semiconductor pattern The second sensing film on the second side of the layer, the second sensing film is located between the second side of the semiconductor pattern layer and the second reference electrode, wherein the second reference electrode and the first reference electrode A reference electrode is separated from each other, and there is a second gap between the second sensing film and the second reference electrode to accommodate the liquid. The sensing device according to item 3 of the scope of patent application, wherein one end of the second sensing film extends to a top surface of the semiconductor pattern layer, and the second sensing film covers the top of the semiconductor pattern layer. Part of the surface is on the insulating layer. The sensing device according to item 1 of the patent application scope further includes a protective layer covering part of the substrate, the insulating layer, the source and the drain, part of the first sensing film and part of the The first reference electrode, and the protective layer does not cover another part of the first sensing film and another part of the first reference electrode. The sensing device according to item 3 of the patent application scope further includes a protective layer covering part of the substrate, the insulating layer, the source and the drain, part of the first sensing film, and part of the The first reference electrode, part of the second sensing film and part of the second reference electrode, and the protective layer does not cover another part of the first sensing film, another part of the first reference electrode, another A part of the second sensing film and another part of the second reference electrode. The sensing device according to item 1 or 3 of the scope of patent application, wherein the source region, the drain region, and the channel region do not overlap each other in a direction perpendicular to the substrate. The sensing device according to item 1 or 3 of the patent application scope, wherein the source region, the drain region and the channel region overlap each other in a direction perpendicular to the substrate. The sensing device according to item 1 of the scope of patent application, wherein the first sensing film is at least correspondingly located on the channel region on the first side of the semiconductor pattern layer. The sensing device according to item 3 of the patent application scope, wherein the second sensing film is at least correspondingly located on the channel region on the second side of the semiconductor pattern layer. The sensing device according to item 1 of the scope of patent application, wherein the first reference electrode overlaps the first sensing film by at least 50% in a side view direction. The sensing device according to item 3 of the scope of patent application, wherein the second reference electrode overlaps the second sensing film by at least 50% in a side view direction. The sensing device according to item 3 of the scope of patent application, further comprising a connecting film, connecting the first sensing film and the second sensing film. The sensing device according to item 3 of the patent application scope, wherein an angle between a bottom surface of the semiconductor pattern layer and one of the first side surface and the second side surface of the semiconductor pattern layer is less than 60 degrees, but greater than 0 degree.