JP2015025801A - パターン状に配置される接合剤を有するpHセンサ - Google Patents
パターン状に配置される接合剤を有するpHセンサ Download PDFInfo
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- JP2015025801A JP2015025801A JP2014107759A JP2014107759A JP2015025801A JP 2015025801 A JP2015025801 A JP 2015025801A JP 2014107759 A JP2014107759 A JP 2014107759A JP 2014107759 A JP2014107759 A JP 2014107759A JP 2015025801 A JP2015025801 A JP 2015025801A
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- B32—LAYERED PRODUCTS
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Abstract
【解決手段】基板70とイオン感応型電界効果トランジスタ(ISFET)ダイ10とを有するpHセンサ2を提供する。ISFETダイ10は、媒体に曝されるように構成されるイオン検知部12を含み、イオン検知部12は媒体のpHレベルに関連する信号を出力する。ISFETダイは、ISFETダイ10と基板70との間に配置される接合剤物質の少なくとも一つの合成物で基板70と接合される。接合剤物質の少なくとも一つの合成物の一以上のストリップが基板70とISFETダイ10との間に第1パターンで配置される。
【選択図】図1
Description
[0001]本発明は、海軍研究事務所により授与された契約番号N00014−10−1−0206の下に、米国政府の支援によってなされたものである。米国政府は、本発明に一定の権利を有する。
[0017]図1は、pHセンサ2の一例の断面図である。pHセンサ2は、ISFETダイ10を有し、ISFETダイ10は、接触する媒体のpHを検知するためのISFETダイ10内部に組み込まれたイオン検知部12を有する。pHセンサ2は、イオン検知部12の少なくとも一部を媒体(例えば、海水又は大洋水)に曝すように構成され、それにより媒体のpHを測定する。ISFETダイ10は、第1(主)面と、第1面と反対の第2(主)面と、第1面と第2面との間の辺の周囲の一以上の縁を画定する概して平面の構造を有する。ISFETダイ10の第1面は、それに組み込まれたイオン検知部12を有する。
[0058]実施例6は、実施例1のpHセンサにおいて、前記ISFETダイが、陽極接合、共晶接合、又は接着剤接合により基板に接合される、pHセンサを含む。
[0061]実施例9は、実施例1ないし8のいずれかのpHセンサにおいて、前記基板はベース基板と前記ベース基板上に形成されるキャップとを有し、前記pHセンサはさらに、前記ISFETダイの外側表面の少なくとも一部上及び前記キャップ基板の少なくとも一部上に形成される保護層と、前記保護層に機械的に結合されるカバー部材であって前記ISFETダイと前記基板を収容し、前記イオン検知部に近接した開口を画定するカバー部材と、ヘッダであって前記基板が取り付けられるヘッダと、参照電圧を供給する参照電極と、ワイヤを介して前記ISFETダイに結合される少なくとも一つの電気ピンと、を有する、pHセンサを含む。
[0066]実施例14は、実施例11ないし13のいずれかの方法において、前記第1接合剤物質を加熱することは、レーザを使用したガラスフリット硬化技術を用いてフリット材の異なる合成物を溶かすことを有する、方法を含む。
Claims (3)
- pHセンサ(2)であって、
基板(70)と、
pHに応答するイオン検知部(12)を含むイオン感応型電界効果トランジスタ(ISFET)ダイ(12)であって、前記ISFETダイは前記基板に接合され、前記ISFETダイの前記イオン検知部は媒体に曝されるように構成され、前記イオン検知部は前記媒体のpHレベルに関連する信号を出力する、ISFETダイと、
前記基板と前記ISFETダイとの間に第1パターンで配置される接合剤物質の少なくとも一つの合成物の一以上のストリップ(206,208)を有する、pHセンサ。 - 請求項1に記載されたpHセンサにおいて、
前記基板と前記ISFETダイとの間に第2パターンで配置される接合剤物質の第2合成物の一以上のストリップ(208,206)を有し、異なる温度において前記2つの物質が異なる方向で前記ダイに応力を引き起こすように、前記第2合成物の熱膨張係数(CTE)が前記少なくとも一つの合成物のCTEとは異なる、pHセンサ。 - 請求項1又は2に記載されたpHセンサにおいて、
接合剤物質の第3合成物(209)を有し、接合剤物質の前記第3合成物は前記ISFETダイの周囲(207)に沿って配置される、pHセンサ。
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US13/952,879 US9671362B2 (en) | 2013-07-29 | 2013-07-29 | ph sensor with bonding agent disposed in a pattern |
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US9664641B2 (en) | 2013-07-29 | 2017-05-30 | Honeywell International Inc. | pH sensor with substrate or bonding layer configured to maintain piezoresistance of the ISFET die |
CN104792848B (zh) * | 2015-01-23 | 2017-11-24 | 南京华印半导体有限公司 | 一种基于印刷晶体管的pH检测标签 |
CN107683406B (zh) * | 2015-07-07 | 2020-08-07 | 日立汽车系统株式会社 | 半导体器件、力学量测量装置和半导体器件的制造方法 |
US9470652B1 (en) * | 2015-09-15 | 2016-10-18 | Freescale Semiconductor, Inc. | Sensing field effect transistor devices and method of their manufacture |
WO2017086324A1 (ja) * | 2015-11-16 | 2017-05-26 | 株式会社豊田中央研究所 | 接合構造体およびその製造方法 |
US9913376B2 (en) * | 2016-05-04 | 2018-03-06 | Northrop Grumman Systems Corporation | Bridging electronic inter-connector and corresponding connection method |
WO2021127147A1 (en) | 2019-12-17 | 2021-06-24 | Fca Us Llc | Vehicle convertible top systems |
US11541730B2 (en) | 2020-12-17 | 2023-01-03 | Fca Us Llc | Removable liftgate flipper glass with detachable hinge |
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