JP2012216525A - プラズマ処理装置及びプラズマ発生用アンテナ - Google Patents

プラズマ処理装置及びプラズマ発生用アンテナ Download PDF

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Publication number
JP2012216525A
JP2012216525A JP2012072759A JP2012072759A JP2012216525A JP 2012216525 A JP2012216525 A JP 2012216525A JP 2012072759 A JP2012072759 A JP 2012072759A JP 2012072759 A JP2012072759 A JP 2012072759A JP 2012216525 A JP2012216525 A JP 2012216525A
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JP
Japan
Prior art keywords
plasma
processing apparatus
shower head
plasma processing
gas
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Pending
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JP2012072759A
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English (en)
Japanese (ja)
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JP2012216525A5 (enExample
Inventor
Taro Ikeda
太郎 池田
Tomohito Komatsu
智仁 小松
Shigeru Kasai
河西　　繁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2012072759A priority Critical patent/JP2012216525A/ja
Priority to US13/435,552 priority patent/US9543123B2/en
Priority to KR1020120033519A priority patent/KR20120112261A/ko
Priority to TW101111240A priority patent/TW201304617A/zh
Priority to CN2012100933940A priority patent/CN102737944A/zh
Publication of JP2012216525A publication Critical patent/JP2012216525A/ja
Publication of JP2012216525A5 publication Critical patent/JP2012216525A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2012072759A 2011-03-31 2012-03-28 プラズマ処理装置及びプラズマ発生用アンテナ Pending JP2012216525A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2012072759A JP2012216525A (ja) 2011-03-31 2012-03-28 プラズマ処理装置及びプラズマ発生用アンテナ
US13/435,552 US9543123B2 (en) 2011-03-31 2012-03-30 Plasma processing apparatus and plasma generation antenna
KR1020120033519A KR20120112261A (ko) 2011-03-31 2012-03-30 플라즈마 처리 장치 및 플라즈마 발생용 안테나
TW101111240A TW201304617A (zh) 2011-03-31 2012-03-30 電漿處理裝置及電漿產生用天線
CN2012100933940A CN102737944A (zh) 2011-03-31 2012-03-31 等离子体处理装置和等离子体产生用天线

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011078029 2011-03-31
JP2011078029 2011-03-31
JP2012072759A JP2012216525A (ja) 2011-03-31 2012-03-28 プラズマ処理装置及びプラズマ発生用アンテナ

Publications (2)

Publication Number Publication Date
JP2012216525A true JP2012216525A (ja) 2012-11-08
JP2012216525A5 JP2012216525A5 (enExample) 2015-05-07

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ID=47269094

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012072759A Pending JP2012216525A (ja) 2011-03-31 2012-03-28 プラズマ処理装置及びプラズマ発生用アンテナ

Country Status (3)

Country Link
JP (1) JP2012216525A (enExample)
KR (1) KR20120112261A (enExample)
TW (1) TW201304617A (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015118739A (ja) * 2013-12-16 2015-06-25 東京エレクトロン株式会社 マイクロ波プラズマ源およびプラズマ処理装置
JP2017123346A (ja) * 2017-03-28 2017-07-13 東京エレクトロン株式会社 マイクロ波放射アンテナ、マイクロ波プラズマ源およびプラズマ処理装置
US9991097B2 (en) 2016-10-25 2018-06-05 Tokyo Electron Limited Plasma processing apparatus
CN108566717A (zh) * 2018-06-29 2018-09-21 合肥中科离子医学技术装备有限公司 采用微波垂直注入激励等离子体发生装置
JP2018195548A (ja) * 2017-05-16 2018-12-06 東京エレクトロン株式会社 プラズマ処理装置
KR20190027742A (ko) * 2017-09-07 2019-03-15 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
KR20190070283A (ko) 2017-12-12 2019-06-20 도쿄엘렉트론가부시키가이샤 안테나 및 플라즈마 성막 장치
US10804078B2 (en) 2016-04-26 2020-10-13 Tokyo Electron Limited Plasma processing apparatus and gas introduction mechanism
JP2024506562A (ja) * 2021-02-03 2024-02-14 エムケーエス インスツルメンツ，インコーポレイテッド マイクロ波放射エネルギーを利用したａｌｄプロセスのマイクロ波アシスト表面化学アニーリング用マイクロ波システム
WO2024157789A1 (ja) * 2023-01-26 2024-08-02 東京エレクトロン株式会社 分散板、ガス供給機構及び基板処理装置

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101485964B1 (ko) * 2013-01-16 2015-01-27 주식회사 아이브이웍스 마이크로파 플라즈마 반응기
JP6338462B2 (ja) * 2013-09-11 2018-06-06 東京エレクトロン株式会社 プラズマ処理装置
KR101588609B1 (ko) * 2014-06-16 2016-01-27 주식회사 윈텔 플라즈마 발생 장치
JP6580830B2 (ja) * 2015-01-22 2019-09-25 株式会社Ｓｃｒｅｅｎホールディングス プラズマ処理装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63263725A (ja) * 1987-04-22 1988-10-31 Hitachi Ltd プラズマ処理装置
JPH07335633A (ja) * 1994-06-14 1995-12-22 Nec Corp プラズマ処理装置
JP2007221116A (ja) * 2006-01-20 2007-08-30 Tokyo Electron Ltd プラズマ処理装置
JP2009301802A (ja) * 2008-06-11 2009-12-24 Tokyo Electron Ltd プラズマ処理装置
JP2010087227A (ja) * 2008-09-30 2010-04-15 Tokyo Electron Ltd プラズマ処理装置
JP2010244805A (ja) * 2009-04-03 2010-10-28 Tokyo Electron Ltd プラズマ処理装置
WO2010140526A1 (ja) * 2009-06-01 2010-12-09 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理装置の給電方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63263725A (ja) * 1987-04-22 1988-10-31 Hitachi Ltd プラズマ処理装置
JPH07335633A (ja) * 1994-06-14 1995-12-22 Nec Corp プラズマ処理装置
JP2007221116A (ja) * 2006-01-20 2007-08-30 Tokyo Electron Ltd プラズマ処理装置
JP2009301802A (ja) * 2008-06-11 2009-12-24 Tokyo Electron Ltd プラズマ処理装置
JP2010087227A (ja) * 2008-09-30 2010-04-15 Tokyo Electron Ltd プラズマ処理装置
JP2010244805A (ja) * 2009-04-03 2010-10-28 Tokyo Electron Ltd プラズマ処理装置
WO2010140526A1 (ja) * 2009-06-01 2010-12-09 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理装置の給電方法

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015118739A (ja) * 2013-12-16 2015-06-25 東京エレクトロン株式会社 マイクロ波プラズマ源およびプラズマ処理装置
US10804078B2 (en) 2016-04-26 2020-10-13 Tokyo Electron Limited Plasma processing apparatus and gas introduction mechanism
US9991097B2 (en) 2016-10-25 2018-06-05 Tokyo Electron Limited Plasma processing apparatus
JP2017123346A (ja) * 2017-03-28 2017-07-13 東京エレクトロン株式会社 マイクロ波放射アンテナ、マイクロ波プラズマ源およびプラズマ処理装置
JP7058485B2 (ja) 2017-05-16 2022-04-22 東京エレクトロン株式会社 プラズマ処理装置
JP2018195548A (ja) * 2017-05-16 2018-12-06 東京エレクトロン株式会社 プラズマ処理装置
KR20190027742A (ko) * 2017-09-07 2019-03-15 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
KR102107310B1 (ko) * 2017-09-07 2020-05-06 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
US10991549B2 (en) 2017-12-12 2021-04-27 Tokyo Electron Limited Antenna and plasma deposition apparatus
KR20190070283A (ko) 2017-12-12 2019-06-20 도쿄엘렉트론가부시키가이샤 안테나 및 플라즈마 성막 장치
CN108566717A (zh) * 2018-06-29 2018-09-21 合肥中科离子医学技术装备有限公司 采用微波垂直注入激励等离子体发生装置
JP2024506562A (ja) * 2021-02-03 2024-02-14 エムケーエス インスツルメンツ，インコーポレイテッド マイクロ波放射エネルギーを利用したａｌｄプロセスのマイクロ波アシスト表面化学アニーリング用マイクロ波システム
WO2024157789A1 (ja) * 2023-01-26 2024-08-02 東京エレクトロン株式会社 分散板、ガス供給機構及び基板処理装置

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Publication number Publication date
TW201304617A (zh) 2013-01-16
KR20120112261A (ko) 2012-10-11

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