JP2012216454A - Light-emitting device and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light-emitting device which is capable of achieving both an improvement in light extraction efficiency and low moisture permeability, and to provide an electronic apparatus provided with the same.SOLUTION: The light-emitting device comprises at least: a plurality of pixels formed on an element substrate 23A and including an organic light-emitting layer 12; a sealing film 17 covering the pixels; microlenses 18 covering the pixels via the sealing film 17; a flattening layer 20 covering the plurality of microlenses 18; and a color filter layer 22 formed for each pixel, on the flattening layer 20. The light-emitting device is characterized in that a refractive index of the microlenses 18 is larger than that of the flattening layer 20.

Description

  The present invention relates to a light emitting device and an electronic apparatus including the light emitting device.

  In recent years, organic EL devices using organic EL elements, which are self-luminous elements, as pixels have been developed. Organic EL devices are capable of high-speed response with high brightness and low power consumption, and are considered to be multicolored easily due to the variety of organic compounds. Research and development is in progress.

As a method for obtaining the three primary colors necessary for the production of a full color display, a method of combining a white light emitting layer and a color filter (color filter method; see Patent Document 1), a method of separately coating the light emitting layers of the three primary colors (painting separately) Etc.) have been proposed.
Among them, the color filter method does not require separate application of the light emitting layer as compared with the separate application method, and the white light emitting layer can be formed on the entire surface of the panel. On the other hand, the color filter method has a problem that the light use efficiency is low and sufficient brightness cannot be obtained. Therefore, various efforts have been made to increase the light extraction efficiency of the organic EL element.

  For example, Patent Document 2 proposes a structure in which a microlens array is installed to improve light extraction efficiency. In the organic EL device of Patent Document 2, a microlens array is formed on a single sealing film. It has been reported that the light emitted from the organic light emitting layer forms a microlens array at the interface with the air layer, thereby suppressing reflection at the interface with the air layer and improving the light extraction efficiency.

JP 2001-142410 A JP 2004-39500 A

However, the structure shown in Patent Document 2 has a problem in that it is difficult to directly form a color filter layer after that because the microlens array must have a hollow structure.
A structure in which the microlens array is installed after the color filter is installed is also conceivable. Normally, the light entering the adjacent color filter is totally reflected at the interface with the air layer, whereas the light is transmitted by the microlens array. Is taken out and color mixing occurs at a wide viewing angle.

Further, considering the sealing performance in Patent Document 2, it is possible that a single layer of sealing film is easily cracked partially due to a foreign matter or a step due to a pixel partition layer, and has a complete barrier property. Have difficulty.
In order to avoid this, it is conceivable to adopt a sealing structure in which sealing films are stacked. However, in a structure in which a microlens array is installed on this structure and a color filter is installed on top of the structure, a microlens array is placed on top of the light emitting element. Since the distance to the lens array is increased, there is a problem that light entering the adjacent microlens array is extracted to the air layer through the adjacent color filter.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

  Application Example 1 A light-emitting device according to this application example includes a substrate, a plurality of pixels including an organic light-emitting layer formed on the substrate, a sealing film covering the plurality of pixels, and the sealing film interposed therebetween. A microlens covering the pixel, a plurality of planarizing layers covering the microlens, and a color filter formed for each pixel on the planarizing layer, wherein the refractive index of the microlens is the planarization It is characterized by being larger than the refractive index of the layer.

  According to this application example, since the microlens is installed between the organic light emitting layer and the color filter and the distance between the microlens and the organic light emitting layer can be made very close, the light emitted from the organic light emitting layer Can be collected by the microlens and then pass through the color filter. As a result, it is possible to provide a light emitting device in which color mixing is difficult to occur at a wide viewing angle and light extraction efficiency is improved.

  Application Example 2 In the light emitting device according to the application example described above, the microlens has a refractive index of 1.6 to 1.9, and the planarization layer has a refractive index of 1.2 to 1.5. It is formed.

  According to this application example, since a refractive index difference occurs between the microlens and the planarization layer, the light emitted from the organic light emitting layer is condensed in the front direction when passing through the microlens, As a result, the light extraction efficiency in the front direction can be improved.

  Application Example 3 In the light emitting device according to the application example described above, the planarization layer is an inorganic film having a SiO (silicon oxide) skeleton or a hybrid film of an organic film and the inorganic film.

  According to this application example, an inorganic film having a skeleton of SiO (silicon oxide) or a hybrid film of an organic film and an inorganic film is used for the flattening layer. Since a film having a high barrier property against moisture and oxygen is used as compared with the oxidized film, it is possible to achieve both improvement of light extraction and low moisture permeability.

  Application Example 4 In the light-emitting device described in the application example, the microlens is a fluorine-based resin.

  According to this application example, by using a fluorine-based resin for the microlens, the refractive index of the microlens can be 1.6 or more because the refractive index is higher than that of acrylic resin or epoxy resin. It becomes.

  Application Example 5 In the light emitting device according to the application example described above, the microlens is a resin mixed with inorganic nanoparticles.

  According to this application example, by using a resin mixed with inorganic nanoparticles, since the particles are smaller than the visible light wavelength, the refractive index can be increased without impairing light scattering and light transmittance, It is possible to obtain a refractive index of the microlens of 1.6 or more.

  Application Example 6 In the light-emitting device according to the application example, the elastic modulus of the microlens is 0.1 GPa or more and 10 GPa or less.

  According to this application example, even when there is an internal stress generated in the film itself in producing the shape of the microlens, it is possible to prevent defects such as cracks because the elastic modulus is very low. .

  Application Example 7 In the light-emitting device described in the application example, the rising angle of the microlens is 5 ° to 70 °.

  According to this application example, when the rising angle of the microlens is 5 ° or more and 70 ° or less, the microlens has a condensing function as a microlens. Since it is possible to prevent cracks and the like at the rising portion of the microlens that occurs during the process, it is possible to achieve both improved light extraction and low moisture permeability.

  Application Example 8 In the light-emitting device described in the application example, the sealing film includes at least one of silicon oxide, silicon nitride, silicon oxynitride, and aluminum oxide.

  According to this application example, by using any one of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, or a combination of these materials for the sealing film, the light transmittance is high and the moisture in the thin film is high. In addition, since a film having a high barrier property against oxygen and oxygen is used, both improvement in light extraction and low moisture permeability can be achieved.

  Application Example 9 In the light emitting device according to the application example described above, a second sealing layer is provided between the planarization layer and the color filter.

  According to this application example, the second sealing layer is disposed between the planarizing layer and the color filter, so that even if a pinhole is partially generated in the sealing film, for example, The barrier layer against moisture and oxygen can be secured without impairing the light transmittance by the sealing layer, so that low moisture permeability can be achieved while maintaining the light extraction efficiency.

  Application Example 10 In the light-emitting device described in the application example, the microlens is a cylindrical lens.

  According to this application example, since the microlens is a cylindrical lens, the effect as a lens is limited only in the left-right direction, but it is easier to manufacture a cylindrical lens than to manufacture a microlens. Therefore, a light-emitting device with relatively good light extraction efficiency, low cost, and high yield can be manufactured.

  Application Example 11 An electronic apparatus according to this application example includes the light-emitting device described in the application example.

  According to this application example, it is possible to provide an electronic apparatus including a light emitting device that can achieve both improvement in light extraction efficiency and low moisture permeability.

It is an equivalent circuit diagram which shows the electrical structure of the organic electroluminescent apparatus of this embodiment. It is a top view which shows typically the structure of the organic electroluminescent apparatus in this embodiment. It is sectional drawing which shows typically the structure of the organic electroluminescent apparatus in this embodiment. It is a figure which shows the electronic device in this embodiment.

First, an embodiment of an organic EL device as a light emitting device of the present invention will be described.
FIG. 1 is an equivalent circuit diagram showing an electrical configuration of the organic EL device of the present embodiment.
As shown in FIG. 1, the organic EL device 1 of this embodiment is an active matrix system using a thin film transistor (hereinafter referred to as TFT) as a switching element.
The organic EL device 1 includes a plurality of scanning lines 101, a plurality of signal lines 102 extending in a direction perpendicular to each scanning line 101, and a plurality of power supply lines 103 extending in parallel to each signal line 102. The pixel region X is formed in the vicinity of each intersection of the scanning line 101 and the signal line 102 with a wiring configuration.
Of course, according to the technical idea of the present invention, an active matrix using TFT or the like is not indispensable. Even if the present invention is implemented using an element substrate for a simple matrix and the simple matrix is driven, the same effect can be obtained at low cost. can get.

  A data line driving circuit 100 including a shift register, a level shifter, a video line, and an analog switch is connected to the signal line 102. Further, a scanning line driving circuit 80 having a shift register and a level shifter is connected to the scanning line 101.

  Further, in each pixel region X, a switching TFT (switching element) 112 to which a scanning signal is supplied to the gate electrode via the scanning line 101 and a pixel shared from the signal line 102 via the switching TFT 112 are provided. A holding capacitor 113 for holding a signal and a driving TFT (switching element) 123 for supplying a pixel signal held by the holding capacitor 113 to a gate electrode are provided. In addition, when electrically connected to the power supply line 103 via the driving TFT 123, the anode 10 into which a drive current flows from the power supply line 103, and a light emitting layer (organic) sandwiched between the anode 10 and the cathode 11 Light emitting layer) 12 is provided.

  According to the organic EL device 1, when the scanning line 101 is driven and the switching TFT 112 is turned on, the potential of the signal line 102 at that time is held in the holding capacitor 113, and according to the state of the holding capacitor 113. The on / off state of the driving TFT 123 is determined. Then, current flows from the power supply line 103 to the anode 10 through the channel of the driving TFT 123, and further current flows to the cathode 11 through the light emitting layer 12. The light emitting layer 12 emits light according to the amount of current flowing through it.

  Next, specific modes of the organic EL device 1 of the present embodiment will be described with reference to FIGS. Here, FIG. 2 is a plan view schematically showing the configuration of the organic EL device. FIG. 3 is a cross-sectional view schematically showing the structure of the organic EL device.

First, the configuration of the organic EL device 1 will be described with reference to FIG. FIG. 2 is a diagram showing a TFT element substrate (hereinafter referred to as “element substrate”) 23 </ b> A that causes the light emitting layer 12 to emit light by the above-described various wirings, TFTs, and various circuits formed on the substrate body 23.
The element substrate 23A of the organic EL device 1 includes an actual display area 4 (inside the two-dot chain line in FIG. 2) in the center part and a dummy area 5 (one-dot chain line and two-dot chain line) arranged around the actual display area 4. Between).

  One of red (R), green (G), and blue (B) light is extracted from the pixel region X shown in FIG. 1, and the sub-pixels R, G, B as the pixels of the present invention shown in FIG. Is configured. In the actual display area 4, the sub-pixels R, G, and B are arranged in a matrix. In addition, each of the sub-pixels R, G, and B is arranged in the same color in the vertical direction on the paper surface, and forms a so-called stripe arrangement. The sub-pixels R, G, and B are combined into one display unit pixel, and the display unit pixel performs full-color display by mixing the light emission of the sub-pixels R, G, and B. It has become.

  On the left and right sides of the actual display area 4 and on the lower layer side of the dummy area 5, scanning line driving circuits 80 are respectively arranged. An inspection circuit 90 is disposed above the actual display area 4 and below the dummy area 5. This inspection circuit 90 is a circuit for inspecting the operating state of the organic EL device 1, and includes, for example, inspection information output means (not shown) for outputting the inspection result to the outside, and the organic EL during production or at the time of shipment. The apparatus 1 is configured to be able to inspect the quality and defects.

(Cross-section structure)
Next, a cross-sectional structure of the organic EL device 1 will be described with reference to FIG.
As shown in FIG. 3, the organic EL device 1 includes a plurality of light emitting elements 24 having a light emitting layer 12 (organic light emitting layer) sandwiched between an anode 10 and a cathode 11 (a pair of electrodes), and a pixel partition partitioning the light emitting elements 24. 13 and an sealing substrate 31 disposed opposite to the element substrate 23A.
The organic EL device 1 in the present embodiment is a so-called “top emission structure” organic EL device. Since the top emission structure extracts light from the sealing substrate 31 side instead of the element substrate 23A side, there is an effect that a wide light emitting area can be secured without being affected by the size of various circuits arranged on the element substrate 23A. Therefore, luminance can be secured while suppressing voltage and current, and the lifetime of the light-emitting element can be maintained long.

(Element board)
As shown in FIG. 3, in the organic EL device 1, the inorganic insulating layer 14 made of silicon nitride or the like is coated on the element substrate 23A on which the above-described various wirings (for example, TFTs or the like) are formed. Further, a contact hole (not shown) is formed in the inorganic insulating layer 14, and the above-described anode 10 is connected to the driving TFT 123. On the inorganic insulating layer 14, a planarizing layer 16 is formed in which a metal reflector 15 made of an aluminum alloy or the like is housed.
On the planarizing layer 16, the anode 10 and the cathode 11 are formed with the light emitting layer 12 sandwiched therebetween, thereby constituting a light emitting element 24. An insulating pixel partition wall 13 is arranged so as to partition the light emitting element 24.

In the present embodiment, the anode 10 is a metal oxide conductive film such as ITO (Indium Thin Oxide) having a high hole injection layer having a work function of 5 eV or more.
In the present embodiment, because of the top emission structure, the anode 10 does not necessarily need to use a light-transmitting material, and a metal electrode made of aluminum or the like may be used. When this configuration is adopted, the above-described metal reflector 15 need not be provided.

  As a material for forming the cathode 11, since this embodiment has a top emission structure, it needs to be a light transmissive material, and a transparent conductive material is used. As the transparent conductive material, ITO is suitable, but other than this, for example, an indium oxide / zinc oxide based amorphous transparent conductive film (Indium Zinc Oxide: IZO) is used. be able to. In the present embodiment, ITO is used.

  For the cathode 11, a material having a large electron injection effect (a work function of 4 eV or less) is preferably used. For example, calcium, magnesium, sodium, lithium metal, or a metal compound thereof. Examples of the metal compound include metal fluorides such as calcium fluoride, metal oxides such as lithium oxide, and organometallic complexes such as acetylacetonato calcium. In addition, these materials alone have high electrical resistance and do not function as electrodes, so patterning a metal layer such as aluminum, gold, silver, or copper to avoid the light emitting part, or transparent metals such as ITO or tin oxide It is good also as a laminated body which combined the oxide conductive layer. In the present embodiment, a laminate of lithium fluoride, magnesium-silver alloy, and ITO is used by adjusting the film thickness to obtain transparency.

The light emitting layer 12 employs a white light emitting layer that emits white light. The white light emitting layer is formed on the entire surface of the element substrate 23A using a vacuum deposition process. As the white light-emitting material, a styrylamine-based light-emitting material and anthracene-based dopamine (blue), or a styrylamine-based light-emitting material and rubrene-based dopamine (yellow) are used.
A triarylamine (ATP) multimer hole injection layer or a TDP (triphenyldiamine) hole transport layer is formed below the light emitting layer 12, and an aluminum quinolinol (Alq3) layer ( It is preferable to form an electron transport layer.

A sealing film 17 is formed on the element substrate 23A so as to cover the light emitting element 24 and the pixel partition wall 13.
The sealing film 17 is preferably made of a silicon compound such as silicon oxide, silicon nitride, or silicon oxynitride in consideration of transparency, adhesion, water resistance, and gas barrier properties. The film thickness of the sealing film 17 is preferably 100 nm or more, and the upper limit of the film thickness is preferably set to 400 nm or less in order to prevent generation of cracks due to stress generated by covering the pixel partition wall 13.
In the present embodiment, the sealing film 17 is formed as a single layer, but may be stacked as a plurality of layers. For example, the sealing film 17 may be composed of a low elastic modulus lower layer and a high water resistance upper layer.
Further, the sealing film is not limited to the silicon compound, and may be configured using aluminum oxide.

A microlens 18 is formed on the sealing film 17.
The micro lens 18 is disposed so as to cover the opening of the pixel partition wall 13 and is formed in a convex shape. As a method for forming the microlens 18, a resin having a refractive index of 1.6 or more, such as an acrylic resin mixed with inorganic nanoparticles such as fluorine resin or titanium oxide, is applied by a coating method such as a photolithography method or an ink jet method. Then, there is a method of patterning for each sub-pixel.
The reason why these resins are used for the microlens 18 is that the refractive index is high and the elastic modulus can be very low as 10 GPa or less. As a result, it has a function of relieving stress generated by warpage or volume expansion of the element substrate 23A and preventing the sealing film 17 from peeling from the pixel partition wall 13 having an unstable shape. Furthermore, in order to relieve stress with the planarizing layer 20 disposed thereon, the rising angle of the microlens 18 is made at 70 ° or less.

In the case of a structure that requires high barrier properties, the elastic modulus of the microlens 18 is 1 GPa or less (preferably 0.1 GPa) because the planarization layer 20 disposed above the structure requires an elastic modulus of 100 GPa or more. It is necessary to make it as low as possible or make the rising angle as low as possible up to 20 ° or less (preferably 5 °).
Further, instead of the microlens 18, a cylindrical lens 19 having an arc-shaped cross section may be arranged in a stripe shape across the sub-pixels of the same color.

The flattening layer 20 is disposed so as to fill the uneven portion generated when the microlens 18 is formed, and the upper surface thereof is formed to be substantially flat.
As a method for forming such a planarizing layer 20, a coating method such as a spin coating method or a slit coating method is used. As this material, an inorganic film having an SiO (silicon oxide) skeleton or an organic film and an inorganic film are used. The hybrid membrane is used.
An inorganic film having an SiO (silicon oxide) skeleton or a hybrid film of an organic film and an inorganic film usually has high permeability and a refractive index of around 1.4, and the microlens is different from the refractive index difference with the microlens 18. 18 can function as an optical lens. The refractive index difference at this time is preferably as large as possible in order to function as a lens (preferably 0.3 or more). Therefore, the microlens 18 requires a high refractive index of 1.6 or more, specifically 1.6 to 1.9, which is possible as a resin, and the planarizing layer 20 is 1.5 or less. Requires a low refractive index of 1.2 to 1.5.

  Further, a second sealing film 21 is formed on the upper surface of the planarizing layer 20. The elastic modulus of the second sealing film 21 is preferably 100 GPa or more, specifically about 200 GPa to 250 GPa. The film thickness of the second sealing film 21 is preferably about 200 nm to 600 nm. This is because if it is less than 200 nm, the coverage with respect to foreign matter is insufficient and a through-hole is partially formed, and the gas barrier property may be impaired. If it exceeds 600 nm, a crack due to stress occurs. Because there is a fear.

  Further, in the present embodiment, since the organic EL device 1 has a top emission structure, the second sealing film 21 needs to have light transmittance. Therefore, by appropriately adjusting the material and film thickness thereof, In the present embodiment, the light transmittance in the visible light region is set to 80% or more, for example.

  A color filter layer 22 is formed on the upper surface of the second sealing film 21. The color filter layer 22 is formed by a photolithography method or an ink jet method, and patterns RGB color resists corresponding to each sub-pixel color. Further, since it is not preferable to expose the light emitting element 24 to a high temperature, for example, a resin that is cured by baking at 120 ° C. or lower under reduced pressure or by applying ultraviolet rays is used.

(Sealing substrate)
Further, the sealing substrate 31 is disposed opposite to the element substrate 23A on which the color filter layer 22 is formed.
The sealing substrate 31 is made of a light-transmitting material such as glass or transparent plastic (polyethylene terephthalate, acrylic resin, polycarbonate, polyolefin, etc.) in order to form a display surface from which emitted light is extracted.

In addition, a peripheral seal layer 33 is provided in the peripheral portion between the element substrate 23 </ b> A and the sealing substrate 31.
The peripheral sealing layer 33 has a bank function for improving the positional accuracy of the bonding between the element substrate 23A and the sealing substrate 31 and preventing the filling layer 34 (adhesive layer) to be described later from protruding, and is cured by ultraviolet rays. It is made of an epoxy material whose viscosity is improved. Preferably, an epoxy monomer / oligomer having an epoxy group and a molecular weight of 3000 or less is used (monomer definition: molecular weight 1000 or less, oligomer definition: molecular weight 1000 to 3000). For example, bisphenol A type epoxy oligomer, bisphenol F type epoxy oligomer, phenol novolac type epoxy oligomer, polyethylene glycol diglycidyl ether, alkyl glycidyl ether, 3,4-epoxycyclohexenylmethyl-3 ′, 4′-epoxycyclohexene carboxylate, There are ε-caprolactone-modified 3,4-epoxycyclohexylmethyl 3 ′, 4′-epoxycyclohexanecarbochelate, and these are used alone or in combination.

  In addition, as a curing agent that reacts with epoxy monomer / oligomer, photoreactive type that causes cationic polymerization reaction such as diazonium salt, diphenyliodonium salt, trifellsulfonium salt, sulfonate ester, iron arene complex, silanol / aluminum complex, etc. Initiators are preferred. In addition, when a material whose viscosity gradually increases after ultraviolet irradiation is used, the peripheral seal layer 33 can be prevented from tearing even with a narrow seal width of 1 mm or less, and the filler can be prevented from sticking out after bonding. Further, in order to make it difficult for bubbles to be generated at the time of bonding while reducing the pressure, it is preferable that the water content is a material adjusted to 1000 ppm or less.

  The film thickness of the peripheral sealing layer 33 is preferably 10 μm to 25 μm in consideration of the total film thickness of the pixel partition wall 13, the sealing film 17, the microlens 18, the planarization layer 20, and the filling layer 34. In addition, in order to regulate the distance between the element substrate 23A and the sealing substrate 31, a mixture of spherical particles made of an organic material having a predetermined particle diameter is preferable. Usually, the viscosity of the sealant is increased by mixing particles of inorganic material in the form of flakes or lumps. However, since the second sealing film 21 described above is damaged at the time of bonding and bonding, the organic material in the present embodiment is used. In the EL device 1, spherical particles of an organic material having a low elastic modulus are mixed in the peripheral seal layer 33. The peripheral sealing layer 33 is disposed so as to be provided on the end portions of the sealing film 17, the planarization layer 20, and the second sealing film 21, but is not limited thereto. The peripheral sealing layer 33 may be disposed on the outer peripheral side of the element substrate 23 </ b> A from the end portions of the sealing film 17, the planarization layer 20, and the second sealing film 21.

A filling layer 34 (adhesive layer) made of a thermosetting resin is formed inside the element substrate 23 </ b> A and the sealing substrate 31 and surrounded by the peripheral seal layer 33.
The filling layer 34 is filled without any gaps inside the organic EL device 1 surrounded by the peripheral sealing layer 33 described above, and fixes the sealing substrate 31 disposed to face the element substrate 23A, and from the outside. It has a buffering function against mechanical impact and protects the light emitting layer 12 and the second sealing film 21.

  The packed layer 34 must be an organic compound material that is excellent in fluidity and does not have a volatile component such as a solvent as a raw material main component before curing, and preferably an epoxy monomer having an epoxy group and a molecular weight of 3000 or less. / Oligomer is used (monomer definition: molecular weight 1000 or less, oligomer definition: molecular weight 1000-3000). For example, bisphenol A type epoxy oligomer, bisphenol F type epoxy oligomer, phenol novolac type epoxy oligomer, polyethylene glycol diglycidyl ether, alkyl glycidyl ether, 3,4-epoxycyclohexenylmethyl-3 ′, 4′-epoxycyclohexene carboxylate, There are ε-caprolactone-modified 3,4-epoxycyclohexylmethyl 3 ′, 4′-epoxycyclohexanecarbochelate, and these are used alone or in combination.

  Further, as the curing agent that reacts with the epoxy monomer / oligomer, an addition polymerization type that is excellent in electrical insulation, forms a cured film that is tough and excellent in heat resistance, has excellent transparency, and has little variation in curing. Is good. For example, 3-methyl-1,2,3,6-tetrahydrophthalic anhydride, methyl-3,6-endomethylene-1,2,3,6-tetrahydrophthalic anhydride, 1,2,4,5-benzene An acid anhydride curing agent such as tetracarboxylic dianhydride, 3,3 ′, 4,4′-benzophenone tetracarboxylic dianhydride, or a polymer thereof is preferable. These curings are performed in a range of 60 ° C. to 100 ° C., and the cured film becomes a polymer having an ester bond that is excellent in adhesion to silicon oxynitride. Furthermore, curing at a low temperature and in a short time is possible by adding a relatively high molecular weight material such as an aromatic amine, alcohol, aminophenol or the like as a curing accelerator that promotes ring opening of acid anhydride.

  The viscosity at the time of application is preferably 100 mPa · s to 1000 mPa · s (room temperature). The reason is that the material filling property into the space after the bonding is taken into consideration, and a material in which the curing starts after the viscosity once decreases immediately after heating is preferable. Further, in order to make it difficult for bubbles to be generated when the pressure is reduced at the time of bonding, it is preferable that the water content is a material adjusted to 100 ppm or less.

  The film thickness of the filling layer 34 is preferably 5 μm to 20 μm. In addition, in order to regulate the distance between the element substrate 23A and the sealing substrate 31, a mixture of spherical particles made of an organic material having a predetermined particle diameter is preferable. Further, similarly to the peripheral sealing layer 33 described above, the organic EL device 1 in the present embodiment is mixed with organic material particles having a low elastic modulus, which are the same as the spherical particles made of the organic material. By mixing an organic material having a low elastic modulus into the particles in the filling layer 34, the damage of the second sealing film 21 described above can be prevented.

(Electronics)
Next, an example of an electronic apparatus provided with the organic EL device of the above embodiment will be described with reference to FIGS.
FIG. 4A is a perspective view showing an example of a mobile phone. In FIG. 4A, reference numeral 50 indicates a mobile phone body, and reference numeral 51 indicates a display unit including the organic EL device 1.
FIG. 4B is a perspective view showing an example of a portable information processing apparatus such as a word processor or a personal computer. 4B, reference numeral 60 denotes an information processing apparatus, reference numeral 61 denotes an input unit such as a keyboard, reference numeral 63 denotes an information processing body, and reference numeral 62 denotes a display unit including the organic EL device 1.
FIG. 4C is a perspective view showing an example of a wristwatch type electronic device. In FIG. 4C, reference numeral 70 denotes a watch body, and reference numeral 71 denotes an EL display unit including the organic EL device 1.
Since the electronic devices shown in FIGS. 4A to 4C are provided with the organic EL device 1 shown in the previous embodiment, the electronic devices have good display characteristics.

  In addition, as an electronic device, it is not restricted to the said electronic device, It can apply to a various electronic device. For example, desktop computers, liquid crystal projectors, multimedia personal computers (PCs) and engineering workstations (EWS), pagers, word processors, TVs, viewfinder type or monitor direct view type video tape recorders, electronic notebooks, electronic The present invention can be applied to electronic devices such as a desktop computer, a car navigation device, a POS terminal, and a device having a touch panel.

  DESCRIPTION OF SYMBOLS 1 ... Organic EL apparatus, 10 ... Anode (a pair of electrodes), 11 ... Cathode (a pair of electrodes), 12 ... Light emitting layer (organic light emitting layer), 13 ... Pixel partition, 17 ... Sealing film, 18 ... Micro lens, DESCRIPTION OF SYMBOLS 19 ... Cylindrical lens, 20 ... Planarization layer, 21 ... 2nd sealing film, 22 ... Color filter layer, 23A ... Element substrate as a substrate, 31 ... Sealing substrate, 33 ... Peripheral sealing layer, 34 ... Filling layer ( Adhesive layer).

Claims (11)

A plurality of pixels including a substrate and an organic light emitting layer formed on the substrate;
A sealing film covering the plurality of pixels;
A microlens that covers the pixel through the sealing film;
A planarization layer covering a plurality of the microlenses;
A color filter formed for each of the pixels on the planarizing layer,
A light-emitting device, wherein a refractive index of the microlens is larger than a refractive index of the planarization layer. The refractive index of the microlens satisfies 1.6 or more and 1.9 or less,
The light emitting device according to claim 1, wherein the planarization layer has a refractive index of 1.2 to 1.5.   The light-emitting device according to claim 1, wherein the planarizing layer is an inorganic film having a skeleton of SiO (silicon oxide) or a hybrid film of the organic film and the inorganic film.   The light emitting device according to claim 1, wherein the microlens is a fluorine-based resin.   The light emitting device according to claim 1, wherein the microlens is a resin mixed with inorganic nanoparticles.   The light emitting device according to claim 1, wherein the microlens has an elastic modulus of 0.1 GPa or more and 10 GPa or less.   The light emitting device according to claim 1, wherein a rising angle of the microlens is 5 ° to 70 °.   The light emitting device according to claim 1, wherein the sealing film contains at least one of silicon oxide, silicon nitride, silicon oxynitride, and aluminum oxide.   The light emitting device according to any one of claims 1 to 8, wherein a second sealing layer is disposed between the planarizing layer and the color filter.   The light emitting device according to claim 1, wherein the microlens is a cylindrical lens.   An electronic apparatus comprising the light emitting device according to claim 1.

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