JP2012209215A - Manufacturing method of organic el device and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method of an organic EL device capable of realizing a narrowing of a frame, and further to provide an electronic apparatus.SOLUTION: A manufacturing method of an organic EL device has a sealing film forming step for forming sealing films that seal light-emitting elements disposed on a plurality of first substrates 20A. In the manufacturing method of the organic EL device, sides 25 of a plurality of first substrates 20A that have mounting terminal portions 40 are laid out so as to be opposed to one another while the plurality of first substrates 20A are being laid out on a mother board W in a matrix manner. In the sealing film forming step, gas barrier layers 19 that constitute the sealing films are formed across at least two of the plurality of first substrates 20A in a portion in which sides 28 of opposite sides to the sides 25 having the mounting terminal portions 40 are laid out so as to be opposed to one another. Hereby, a frame area can be narrowed at sides of opposite sides to the mounting terminal portions 40.

Description

  The present invention relates to a method for manufacturing an organic EL device and an electronic apparatus.

  An organic EL (Electro Luminescence) device includes a light emitting element formed of a material containing an organic material. This light-emitting element has a basic structure in which an organic light-emitting layer (light-emitting layer) is sandwiched between an anode and a cathode. Furthermore, in addition to these basic configurations, the light-emitting element includes a hole injection layer disposed between the anode and the light-emitting layer in order to perform hole injection from the anode more easily, and electron injection from the cathode. Functional layers responsible for various functions, such as an electron injection layer disposed between the cathode and the light-emitting layer, have been added to make it easier, and the effects of these functional layers achieve high brightness and high luminous efficiency. There are a lot of configurations.

  Many of the materials used for forming these layers, such as the light emitting layer, the hole injection layer, and the electron injection layer, easily react with moisture and oxygen in the atmosphere and deteriorate. When these layers deteriorate, a non-light emitting region called a “dark spot” is formed in the organic EL device, and the performance as a light emitting element deteriorates. Therefore, in an organic EL device, in order to prevent intrusion of moisture, oxygen, etc., a light emitting element is formed by a sealing film formed by a cathode protective layer, an organic flattening layer for flattening, a gas barrier layer having excellent moisture resistance, and the like. There is known a configuration in which a first substrate that seals and a second substrate as a protective substrate are bonded to each other via an adhesive layer (Patent Document 1).

  As a method for manufacturing such an organic EL device, a method is known in which a plurality of first substrates are laid out on a mother substrate as shown in FIG. .

JP 2009-117079 A

  By the way, in a display device used for a display unit of a mobile device, a non-display area (frame part) arranged in a peripheral part of a display area called a “frame part” can be created due to problems of functionality and design. As a minimum, the effective display area is generally widened. Therefore, when using an organic EL device as a display unit of a portable device, it is necessary to realize a narrow frame structure having a narrow frame portion.

  However, in the configuration of the organic EL device disclosed in Patent Document 1, when forming the sealing film, the sealing film must be formed so that the mounting terminal portion to which the external wiring is joined is exposed. Therefore, the distance from the mounting terminal portion to the end of the sealing film must ensure a distance greater than the tolerance at the time of forming the sealing film. That is, since it is necessary to form a sealing film for each organic EL device, a space having a predetermined tolerance is required between the outer shape of the organic EL device and the sealing film, and the outer shape of the organic EL device and the light emitting pixel. There is a problem that it is difficult to narrow the frame area between the areas.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

  Application Example 1 An organic EL device manufacturing method according to this application example includes a sealing film forming step for forming a sealing film for sealing a light emitting element provided on a first substrate. In the method, a plurality of the first substrates are laid out in a matrix on a mother substrate, and at least a part of the plurality of first substrates is laid out so that mounting terminal portions face each other, and the sealing film In the forming step, the sealing film is formed across at least two of the first substrates in a portion laid out so that opposite sides of the mounting terminal portion face each other.

According to this application example, the sealing film can be continuously formed on the side opposite to the mounting terminal portion with the adjacent first substrate, and therefore the first substrate adjacent when forming the sealing film. Therefore, it is not necessary to consider the distance from the mounting terminal portion, and this makes it possible to narrow the frame region on the opposite side of the mounting terminal portion. That is, an organic EL device with a narrow frame can be manufactured.
In addition, when the sealing film is formed, the width of the non-film formation area is widened, so that there is an advantage that it is easy to form a mask to be used.

  Application Example 2 In the method of manufacturing an organic EL device according to the application example, the sealing film includes an organic planarization layer and a gas barrier layer, and the organic planarization layer is formed for each of the first substrates. The gas barrier layer may be formed across at least two of the first substrates in a portion laid out so that opposite sides of the mounting terminal portion face each other.

  According to this application example, it is possible to realize a narrow frame while maintaining the sealing performance in the gas barrier layer.

  Application Example 3 In the method of manufacturing an organic EL device according to the application example, the sealing film includes a cathode protection layer, an organic planarization layer, and a gas barrier layer, and the organic planarization layer is the first planarization layer. The cathode protective layer and the gas barrier layer are formed across at least two of the first substrates in a portion formed for each substrate and laid out so that opposite sides of the mounting terminal portions face each other.

  According to this application example, it is possible to realize a narrow frame while maintaining the sealing performance by the cathode protective layer and the gas barrier layer.

  Application Example 4 In the method of manufacturing the organic EL device according to the application example, the sealing film includes an inorganic planarization layer and a gas barrier layer, and is laid out so that opposite sides of the mounting terminal portion face each other. In the portion, the inorganic planarization layer and the gas barrier layer may be formed across at least two of the first substrates.

  According to this application example, it is possible to realize a narrow frame while maintaining the sealing performance of the inorganic flattening layer and the gas barrier layer.

  Application Example 5 An electronic apparatus according to this application example includes an organic EL device manufactured using the method for manufacturing an organic EL device according to the application example.

  According to this, the electronic device of this application example can provide a smaller electronic device by using the organic EL device in which the frame is narrowed.

FIG. 3 is an equivalent circuit diagram illustrating an electrical configuration of the organic EL device according to the first embodiment. FIG. 3 is a cross-sectional view schematically showing the structure of the organic EL device according to the first embodiment. The expanded sectional view of the A section shown in FIG. FIG. 2 is a plan view schematically showing the configuration of the organic EL device according to the first embodiment. FIG. 3 is a process flow diagram illustrating a method for manufacturing the organic EL device according to the first embodiment. 1 is a layout diagram of a first substrate of an organic EL device according to a first embodiment. The manufacturing process figure of the organic electroluminescent apparatus concerning 1st Embodiment. The manufacturing process figure of the organic electroluminescent apparatus concerning 1st Embodiment. The manufacturing process figure of the organic electroluminescent apparatus concerning 1st Embodiment. 1 is a schematic cross-sectional view showing a method for manufacturing an organic EL device according to a first embodiment. The schematic sectional drawing which shows the structure of the 1st board | substrate of the organic electroluminescent apparatus which concerns on 2nd Embodiment. The schematic sectional drawing which shows the manufacturing method of the organic electroluminescent apparatus concerning 2nd Embodiment. The layout diagram of the 1st substrate of the organic EL device concerning a 3rd embodiment. (A)-(c) is the schematic which shows the example of an electronic device. FIG. 17 is a schematic cross-sectional view showing a conventional organic EL device and showing a structure of a first substrate in part C of FIG. 16. The layout diagram of the 1st board | substrate in the conventional organic electroluminescent apparatus.

(First embodiment)
<Organic EL device>
First, the organic EL device of the present embodiment will be described with reference to FIGS. FIG. 1 is an equivalent circuit diagram showing an electrical configuration of the organic EL device of the first embodiment, FIG. 2 is a cross-sectional view schematically showing the structure of the organic EL device of the first embodiment, and FIG. FIG. 4 is an enlarged cross-sectional view for explaining the structure of the periphery of the organic EL device, and FIG. 4 is a plan view schematically showing the configuration of the organic EL device according to the first embodiment. It is.

As shown in FIG. 1, the organic EL device 1 of the present embodiment is an active matrix system using a thin film transistor (hereinafter referred to as “TFT”) as a switching element.
A wiring configuration comprising a plurality of scanning lines 101, a plurality of signal lines 102 extending in a direction perpendicular to each scanning line 101, and a plurality of power supply lines 103 extending in parallel to each signal line 102; A sub-pixel X is formed in the vicinity of each intersection of the scanning line 101 and the signal line 102.
Of course, according to the technical idea of the present invention, an active matrix using TFT or the like is not indispensable. Even if the present invention is implemented using an element substrate for a simple matrix and the simple matrix is driven, the same effect can be obtained at low cost. can get.

  A data line driving circuit 100 including a shift register, a level shifter, a video line, and an analog switch is connected to the signal line 102. Further, a scanning line driving circuit 80 having a shift register and a level shifter is connected to the scanning line 101.

  Further, each of the sub-pixels X includes a switching TFT (switching element) 112 to which a scanning signal is supplied to the gate electrode via the scanning line 101, and a pixel shared from the signal line 102 via the switching TFT 112. A holding capacitor 113 for holding a signal, a driving TFT (switching element) 123 to which a pixel signal held by the holding capacitor 113 is supplied to a gate electrode, and the power supply line 103 through the driving TFT 123 are electrically connected An anode 10 into which a drive current flows from the power supply line 103 when connected, and a light emitting layer (organic light emitting layer) 12 sandwiched between the anode 10 and the cathode 11 are provided. The light emitting element 21 (refer FIG. 2) is comprised by the light emitting layer 12, and the anode 10 and the cathode 11 as a pair of electrode which pinches | interposes this.

  According to the organic EL device 1, when the scanning line 101 is driven and the switching TFT 112 is turned on, the potential of the signal line 102 at that time is held in the holding capacitor 113, and according to the state of the holding capacitor 113. The on / off state of the driving TFT 123 is determined. Then, current flows from the power supply line 103 to the anode 10 through the channel of the driving TFT 123, and further current flows to the cathode 11 through the light emitting layer 12. The light emitting layer 12 emits light according to the amount of current flowing through it.

  Next, a cross-sectional structure of the organic EL device 1 will be described with reference to FIGS. As shown in FIG. 2, the organic EL device 1 of the present embodiment includes a first substrate 20 </ b> A on which a plurality of light emitting elements 21 are arranged, and a cathode protective layer 17 formed by laminating the plurality of light emitting elements 21. Each of the organic planarization layer 18 and the gas barrier layer 19, and a second substrate 31 disposed opposite to the surface of the first substrate 20A on which the plurality of light emitting elements 21 are disposed. 20A and the second substrate 31 are bonded to each other via a seal layer 33 and an adhesive layer 34.

  The organic EL device 1 is a so-called “top emission type” organic EL device. In the top emission method, since light is extracted from the second substrate 31 side instead of the first substrate 20A side, there is an effect that a wide light emitting area can be secured without being affected by the size of various circuits arranged on the first substrate 20A. . Therefore, luminance can be ensured while suppressing voltage and current, and the lifetime of the light emitting element 21 can be maintained long.

  In the following description, in FIG. 2, the side on which the first substrate 20A is disposed is the lower side, and the side on which the second substrate 31 is disposed is the upper side, and the vertical relationship and stacking relationship of each component are shown. . Hereinafter, each component will be described in order.

(First substrate)
20 A of 1st board | substrates are equipped with the board | substrate main body 20, the various wiring and TFT element which were mentioned above on the board | substrate main body 20, and the inorganic insulating film 14 which covers these wiring, TFT element, etc. As shown in FIG. As the substrate body 20, either a transparent substrate or an opaque substrate can be used. In the present embodiment, transparent glass is used as the material of the substrate body 20.

  The driving TFT 123 shown in FIG. 1 and various wirings (not shown) are formed on the substrate body 20, and the inorganic insulating film 14 is formed on the entire surface of the substrate body 20 so as to cover these components. . The inorganic insulating film 14 is made of, for example, silicon nitride.

  On the first substrate 20 </ b> A, a planarizing film 16 for alleviating surface irregularities derived from wirings, TFT elements, and the like provided in the first substrate 20 </ b> A, and a light emitting element 21 arranged and disposed in the planarizing film 16. And a metal reflection layer 15 having a function of reflecting the light irradiated from the second substrate 31 side. The planarizing film 16 is formed of an insulating resin material, and since the formation method uses photolithography, for example, a photosensitive acrylic resin or a cyclic olefin resin is used as the material.

  The metal reflection layer 15 is formed of the same metal as the wiring material, for example, a metal such as aluminum, titanium, molybdenum, silver, or copper, or an alloy material combining them, and has a property of reflecting light. In this embodiment, it is made of aluminum. The metal reflection layer 15 is disposed so as to overlap the light emitting element 21 in a plane between the light emitting element 21 and the substrate body 20. Since the same material as the wiring is used, the metal reflection layer 15 can be formed simultaneously in the process of forming the wiring. Thereby, a manufacturing process can be simplified.

  A light emitting element 21 is disposed on the planarizing film 16 in a region overlapping the metal reflective layer 15 in a plane, and between the adjacent light emitting elements 21 and between the light emitting element 21 and the end of the substrate body 20. A partition wall 13 is formed between them. The partition wall 13 is formed of an insulating resin material as with the planarization film 16, and a photolithography method is used for the formation method. For example, a photosensitive acrylic resin or a cyclic olefin resin is used as the material.

  The light emitting element 21 is formed by sandwiching the light emitting layer 12 between the anode 10 and the cathode 11. The anode 10 constituting the light emitting element 21 is formed on the planarizing film 16 and connected to the driving TFT 123 provided in the first substrate 20A. The anode 10 is preferably made of a material having a work function of 5 eV or more and a high hole injection effect. Examples of such a material having a high hole injection effect include metal oxides such as ITO (Indium Thin Oxide). In this embodiment, ITO is used. In addition, since the RGB light emission efficiency can be increased by controlling the distance between the metal reflective layer 15 and the light emitting layer 12, it is preferable to control the reflection distance by controlling the film thickness for each RGB pixel. In addition, since the organic EL device 1 of the present embodiment is a top emission type light emitting method, the anode 10 does not necessarily have light transmittance, and a metal electrode such as aluminum that does not transmit light may be provided. . In that case, since the anode 10 reflects light and has the function of the metal reflection layer 15 described above, the metal reflection layer 15 may not be provided.

  The light emitting layer 12 employs a white light emitting layer that emits white light. In this embodiment, the white light emitting layer is formed using a low molecular weight light emitting material by a vacuum deposition method. As a white light emitting material, white light is emitted by simultaneously emitting a layer obtained by doping an anthracene-based dopant (blue) and a layer doped with a rubrene-based dopant (yellow) in a stricylamine-based light-emitting layer. The light emitting material which implement | achieves can be mentioned. Although a low molecular light emitting material is used here, the light emitting layer 12 may be formed using a polymer light emitting material. It is also possible to change the configuration of each layer to have a three-layer structure in which white light is extracted by simultaneously emitting red, green, and blue colors.

  A triarylamine multimer (ATP) layer (hole injection layer), a triphenyldiamine derivative (TPD) layer (hole transport layer), the light emitting layer 12 and the cathode are provided between the anode 10 and the light emitting layer 12. It is preferable that an aluminum quinolinol (Alq3) layer (electron injection layer) and LiF (electron injection buffer layer) are respectively formed between the electrodes 11 and 11 to facilitate injection of electrons and holes from each electrode. .

  The cathode 11 covers the surface of the light emitting layer 12 and the partition wall 13 and extends to the top of the partition wall 13 disposed on the outermost side (side closer to the outer peripheral portion of the first substrate 20A). Yes. As a material for forming the cathode 11, a material having a large electron injection effect (a work function of 4 eV or less) is preferably used. For example, calcium, magnesium, sodium, lithium metal, or a metal compound thereof. Examples of the metal compound include metal fluorides such as calcium fluoride, metal oxides such as lithium oxide, and organometallic complexes such as acetylacetonato calcium. When these materials are used, the cathode 11 is formed using a high-density plasma film forming method such as a vacuum deposition method for a metal material and an ECR plasma sputtering method, an ion plating method, or a counter target sputtering method for a metal compound. Can do.

  In addition, these materials alone have high electrical resistance and do not function sufficiently as an electrode. Therefore, a metal layer such as aluminum, gold, silver, or copper is patterned so as to avoid a light emitting portion, or transparent such as ITO or tin oxide. You may use it in combination with the laminated body with a metal oxide conductive layer. In the present embodiment, a magnesium-silver alloy (MgAg) is used by adjusting the film thickness to 20 nm or less so that transparency can be obtained. The thickness of the cathode 11 is about 10 nm.

  A first connection wiring (first cathode wiring) 22A is formed in a region on the first substrate 20A where the planarizing film 16 is not formed near the outer periphery of the first substrate 20A. The wiring 22A and the cathode 11 are connected by an auxiliary cathode wiring 24 and are conductive.

  The first cathode wiring 22A is formed for the purpose of energizing the cathode 11 to a power source (not shown), and is mainly provided near the outer periphery of the first substrate 20A. As the material for forming the first cathode wiring 22A, metals having high electrical conductivity, such as aluminum, titanium, molybdenum, tantalum, silver, copper, or alloys thereof are used, and these materials are laminated in a single layer or multiple layers. What was formed is used. Moreover, ITO which is the same material as the anode 10 is formed on the outermost layer of the first cathode wiring 22A. Simultaneously with the formation of the anode 10, by forming ITO on the outermost layer of the first cathode wiring 22A, corrosion of the first cathode wiring 22A in the photolithography process in the manufacturing process can be prevented. The thickness of the first cathode wiring 22A is about 300 nm to 800 nm, and the width is about 0.5 mm to 1.5 mm. However, since the width of the first cathode wiring 22A that can be formed differs depending on the size of the organic EL device 1, the width of the first cathode wiring 22A is not limited to this value.

  The auxiliary cathode wiring 24 is provided at the end of the cathode 11 for the purpose of assisting the energization between the cathode 11 and the first cathode wiring 22A. As a material for forming the auxiliary cathode wiring 24, a highly conductive metal such as aluminum is used, and the auxiliary cathode wiring 24 is formed by vacuum deposition or sputtering through a mask. The film thickness of the auxiliary cathode wiring 24 is preferably about 100 nm to 500 nm. In this embodiment, the auxiliary cathode wiring 24 having a film thickness of 300 nm is formed.

(Sealing film)
On the first substrate 20 </ b> A, a plurality of sealing films are laminated on the entire surface so as to cover the light emitting elements 21 arranged to form a layer structure. As this sealing film, the organic EL device 1 of this embodiment includes a cathode protective layer 17, an organic planarizing layer 18, and a gas barrier layer 19. Hereinafter, each layer formed on the first substrate 20A will be described.

  On the first substrate 20A, the cathode protective layer 17 is formed so as to cover the end face of the first cathode wiring 22A and the surfaces of the first cathode wiring 22A, the auxiliary cathode wiring 24, and the cathode 11. The cathode protective layer 17 can suppress damage to the cathode 11 and the light emitting layer 12 therebelow, which are as thin as 20 nm or less. Further, it also has a function as a gas barrier layer that prevents moisture from entering the light emitting element 21.

  The cathode protective layer 17 can be formed using a high-density plasma film forming method such as an ECR sputtering method or an ion plating method. Before the formation, it is preferable to improve the adhesion of the film formed by oxygen plasma treatment.

  The cathode protective layer 17 is preferably composed of a silicon compound such as silicon oxynitride or silicon nitride in consideration of transparency, adhesion, water resistance, insulation, and gas barrier properties. Among these, silicon oxynitride is preferable because it can be a colorless and transparent film while suppressing film stress while maintaining high moisture resistance by changing the ratio of oxygen and nitrogen contained. In this embodiment, the cathode protective layer 17 is formed using silicon oxynitride.

  The film thickness of the cathode protective layer 17 is preferably 100 nm or more, and the upper limit of the film thickness is preferably set to 400 nm or less in order to prevent generation of cracks due to stress generated by covering the partition wall 13. In the present embodiment, the cathode protective layer 17 is formed as a single layer, but may be stacked as a plurality of layers. For example, the cathode protective layer 17 may be composed of a low elastic modulus lower layer and a high water resistance upper layer.

  On the cathode protective layer 17, an organic planarization layer 18 is formed inside the cathode protective layer 17. The organic planarization layer 18 is disposed so as to fill the uneven portion of the cathode protective layer 17 formed in an uneven shape due to the influence of the shape of the partition wall 13, and the upper surface thereof is formed substantially flat. The organic planarization layer 18 has a function of relieving stress generated by warping and volume expansion of the first substrate 20A and preventing the cathode protective layer 17 from peeling off from the partition wall 13. In addition, since the upper surface of the organic planarization layer 18 is substantially planarized, a gas barrier layer 19 described later, which is a hard film formed on the organic planarization layer 18, is also planarized. Therefore, there is no portion where stress is concentrated, and thereby, generation of cracks in the gas barrier layer 19 can be prevented.

  The organic flattening layer 18 is preferably formed of an organic compound material that is excellent in fluidity and free of solvents and volatile components, and is a raw material for the polymer skeleton. An epoxy monomer / oligomer having a molecular weight of 3000 or less can be suitably used.

  Moreover, as an optimal film thickness of the organic planarization layer 18, 2 micrometers-5 micrometers are preferable. When the organic flattening layer 18 is thicker, it is easier to prevent the gas barrier layer 19 from being damaged when foreign matter is mixed in. However, if the total thickness of the organic flattening layer 18 exceeds 5 μm, light emission from a colored layer 32a described later occurs. This is because the distance of the layer 12 increases and the amount of light that escapes to the side surface increases, so that the light extraction efficiency decreases.

  A gas barrier layer 19 is formed on the organic planarization layer 18 so as to cover the entire surface including the end of the organic planarization layer 18 and cover the entire surface of the cathode protective layer 17. The gas barrier layer 19 is for preventing oxygen and moisture from entering, and thereby, deterioration of the light emitting element 21 due to oxygen and moisture can be suppressed. In consideration of transparency, gas barrier properties, and water resistance, the gas barrier layer 19 is preferably formed using a silicon compound containing nitrogen, that is, silicon nitride, silicon oxynitride, or the like. In this embodiment, the gas barrier layer 19 is formed using silicon oxynitride.

  The gas barrier layer 19 can be formed using a high-density plasma film forming method such as an ECR sputtering method or an ion plating method. Before the formation, it is preferable to improve the adhesion of a film formed by performing oxygen plasma treatment on the formation surface. The film thickness of the gas barrier layer 19 is preferably 100 nm or more in order to prevent the gas barrier layer 19 from being damaged and to ensure gas barrier properties. Moreover, in order to prevent a crack when covering the edge part of the organic planarization layer 18, and uneven | corrugated | grooved parts, such as 22 A of 1st cathode wiring, it is preferable that it is 800 nm or less. In the present embodiment, the gas barrier layer 19 is formed as a single layer, but may be stacked as a plurality of layers.

A cathode protective layer 17 and a gas barrier layer 19 are formed so as to cover the first cathode wiring 22A. As described above, ITO (oxide conductive film) used for the anode 10 is formed on the surface of the first cathode wiring 22A. Since this ITO takes a polycrystalline columnar structure in the process of film formation, there are many gaps, and moisture easily enters. In addition, when heat treatment is performed to increase the conductivity of ITO, the crystal aggregates and grows, so that there are more gaps. Therefore, if the first cathode wiring 22A is exposed, moisture such as water vapor in the external environment may enter the organic EL device 1 through the ITO on the surface of the first cathode wiring 22A. In the embodiment, since the first cathode wiring 22A is covered with a layer made of a silicon compound having low moisture permeability, it is possible to prevent moisture from entering from the first cathode wiring 22A. Furthermore, since the gas barrier layer 19 completely covers the organic planarization layer 18, it is possible to prevent moisture from entering through the organic planarization layer 18.
The cathode protective layer 17 and the organic planarization layer 18 are provided to extend to the outer edge portion of the first substrate 20A, and the cathode protective layer 17 and the gas barrier layer 19 made of an inorganic material are in contact with each other at the outer edge portion. Are stacked. That is, the cathode protective layer 17 and the gas barrier layer 19 are directly laminated without using the organic planarizing layer 18 to improve the sealing performance at the outer edge portion.

(Second board)
A second substrate 31 is disposed opposite to the first substrate 20A on which the gas barrier layer 19 is formed. The second substrate 31 is a substrate having a function of protecting the gas barrier layer 19 and light transmittance, such as inorganic substances such as glass, quartz glass, and silicon nitride, acrylic resin, polycarbonate resin, polyethylene terephthalate resin, polyolefin resin, and the like. The organic polymer (resin) can be used. In addition, a composite material formed by stacking or mixing the above materials may be used as long as it has light transmissivity. Among them, a glass substrate is particularly preferably used in order to match the thermal expansion coefficient with the first substrate 20 </ b> A to provide high transparency and moisture resistance and impart heat resistance.

  A color filter layer 32 is formed on the surface of the second substrate 31 facing the first substrate 20A. In the color filter layer 32, a colored layer 32a that modulates transmitted light into any one of red (R), green (G), and blue (B) is arranged in a matrix. Each of the colored layers 32 a is disposed to face the white light emitting layer 12 formed on the anode 10. As a result, the light emitted from the light emitting layer 12 passes through each of the colored layers 32a and is emitted to the viewer as red light, green light, and blue light to perform color display.

(Seal layer / adhesive layer)
The first substrate 20A and the second substrate 31 include a seal layer 33 disposed in the vicinity of the outer edge portion of the first substrate 20A, and the first substrate 20A and the second substrate 31 in a region surrounded by the seal layer 33. It is bonded by the sandwiched adhesive layer 34.

  In addition to the function of preventing moisture from entering the inside of the apparatus, the seal layer 33 has a function as a bank that improves the positional accuracy of the bonding between the first substrate 20A and the second substrate 31 and prevents the adhesive layer 34 from protruding. is doing. The forming material of the sealing layer 33 is made of a resin material that is cured by ultraviolet rays and has an improved viscosity. Preferably, an epoxy monomer / oligomer having an epoxy group and having a molecular weight of 3000 or less is used.

  Usually, the material for forming the seal layer 33 includes spherical particles (spacers) having a predetermined particle diameter for controlling the distance between the substrates, and scaly or massive inorganic materials (inorganic fillers) for adjusting the viscosity. Etc.) are often mixed. However, since these fillers may damage the gas barrier layer 19 at the time of bonding and pressure bonding, in this embodiment, a seal layer forming material in which these fillers are not mixed is used. The film thickness of the seal layer 33 is preferably 5 μm to 20 μm.

  The adhesive layer 34 is filled in the organic EL device 1 surrounded by the seal layer 33 without any gap, and fixes the second substrate 31 disposed opposite to the first substrate 20A, and mechanical shock from the outside. And has a function of protecting the light emitting layer 12 and the gas barrier layer 19.

  The main component of the material for forming the adhesive layer 34 should be an organic compound material that is excellent in fluidity and does not have a volatile component such as a solvent, and preferably an epoxy monomer / oligomer having an epoxy group and a molecular weight of 3000 or less. Is used.

  The viscosity at the time of applying the forming material of the adhesive layer 34 is preferably 200 mPa · s to 1000 mPa · s (room temperature). The reason is that the material filling property into the space after the bonding is taken into consideration, and a material in which the curing starts after the viscosity once decreases immediately after heating is preferable. Moreover, it is preferable that the water content is a material adjusted to 1000 ppm or less.

  The film thickness of the adhesive layer 34 is preferably 3 μm to 10 μm. When the adhesive layer 34 has such a thickness, the total of the film thickness of the adhesive layer 34 and the film thickness of each sealing film such as the organic planarization layer 18 described above is about 15 μm at the maximum. When the total film thickness exceeds 15 μm, the distance between the color filter layer 32 and the light emitting element 21 is excessively widened, and the proportion of the light that escapes from the light emitting element 21 to the side of the device increases. This is because the efficiency becomes worse. This film thickness is controlled by controlling the amount of the material for forming the adhesive layer 34 disposed.

(Cross sectional structure of the periphery)
Next, the sectional structure of the peripheral part of the organic EL device 1 will be described with reference to an enlarged sectional view shown in FIG. FIG. 3 is a view showing a main part (A part surrounded by a circle) of FIG.

  As shown in FIG. 3, the peripheral portion of the organic EL device 1 includes a first cathode wiring 22A, an auxiliary cathode wiring 24, a cathode protection layer 17, an organic layer between the first substrate 20A and the second substrate 31 described above. The planarization layer 18, the gas barrier layer 19, and the seal layer 33 are sequentially stacked. Further, the seal layer 33 is formed outside the partition wall 13 formed at a position closest to the outermost side of the apparatus.

  The organic planarization layer 18 is formed so as to relieve the uneven shape mainly derived from the partition wall 13 and the planarization film 16 in the peripheral portion. In the peripheral portion of the organic planarizing layer 18, the partition wall 13 and the planarizing film 16 form a stepped shape, and the organic planarizing layer 18 has a stepped shape along the stepped base shape. Is formed. The organic planarization layer 18 is formed so as to become thinner from the center of the device to the peripheral end 35. The elevation angle (contact angle) θ with respect to the horizontal direction of the first substrate 20A at the peripheral edge 35 of the organic planarization layer 18 is preferably 20 degrees or less, and particularly preferably around 10 degrees. Thereby, damages such as cracks and peeling due to stress concentration of the gas barrier layer 19 covering the peripheral end portion 35 of the organic planarization layer 18 can be prevented. In the present embodiment, the elevation angle θ is 10 degrees. Furthermore, since the organic planarization layer 18 is formed along the stepped base shape at the periphery of the organic planarization layer 18, the organic planarization layer 18 extends from the peripheral edge 35 to the top of the partition wall 13. The elevation angle with respect to the horizontal direction of the surface slope is formed without increasing rapidly.

  Here, the cathode protective layer 17 and the gas barrier layer 19 are formed so as to completely cover the first cathode wiring 22A as described above. The gas barrier layer 19 is formed wider than the organic planarization layer 18 so as to completely cover the organic planarization layer 18, and the seal layer 33 is disposed on the gas barrier layer 19. Further, the rising portion 36 of the peripheral end portion 35 of the organic planarization layer 18 is formed within the width d of the seal layer 33.

  The organic planarization layer 18 and the gas barrier layer 19 formed on the organic planarization layer 18 are formed using different materials, and are mostly formed of materials having different coefficients of thermal expansion. If the temperature of these layers changes due to environmental changes or heat generated by driving the apparatus, the gas barrier layer 19 may be damaged due to the difference in the coefficient of thermal expansion. Such damage is likely to occur at the edge of the organic planarization layer 18 where the shape of the gas barrier layer 19 changes. However, when the sealing layer 33 is formed so as to overlap the peripheral end portion 35 of the organic planarization layer 18 and the gas barrier layer 19 is sandwiched between organic materials as in this embodiment, the gas barrier layer 19 is cracked or peeled off due to stress concentration. Can prevent damage. Therefore, it is possible to prevent moisture from reaching the light emitting element 21 through the first cathode wiring 22A and the organic planarization layer 18 and to prevent the generation of dark spots.

  Note that the cathode protective layer 17 and the gas barrier layer 19 in this embodiment are formed using a common mask. From the viewpoint of the narrow frame structure, three sides excluding the side 25 (see FIG. 4) having the mounting terminal portion 40 among the four outer sides of the first substrate 20A cover the end of the first substrate 20A.

  Further, the peripheral portion of the organic EL device 1 is a frame portion which is a non-light emitting portion. The frame portion is disposed, for example, between the top of the partition wall 13 provided at the outermost end on the first substrate 20A and the end of the first substrate 20A. The width D of the frame portion is, for example, 1 mm, and the width d of the seal layer 33 is, for example, 0.5 mm.

Next, the planar structure of the organic EL device 1 will be described with reference to FIG. FIG. 4 is a plan view schematically showing the configuration of the organic EL device according to the first embodiment.
As shown in FIG. 4, the first substrate 20 </ b> A has a rectangular shape in plan view, the display region 3 disposed in the center of the substrate body 20, and the frame portion disposed around the display region 3. 4 is provided.

  The display area 3 has a rectangular area shape in plan view, and the sub-pixels X shown in FIG. 1 are arranged in a matrix. A light emitting element 21 is disposed in each of the sub-pixels X, so that any one of red (R), green (G), and blue (B) light is extracted. The sub-pixels X that develop colors in these colors are arranged in the same color in the lateral direction in the drawing to form a so-called stripe arrangement. The unit pixels are formed by combining the RGB colors of the sub-pixels X into one unit, and the unit pixels are configured to perform full-color display by mixing RGB light emission colors.

  The frame portion 4 covers the display region 3 and is formed in a rectangular area 11 in plan view that is formed in a larger area than the display region 3 (until it protrudes into the frame portion 4), and a first electrode 11 that surrounds the periphery of the cathode 11. One cathode wiring 22A, a second cathode wiring 22B formed in connection with the first cathode wiring 22A, and a strip-shaped auxiliary member disposed on both short sides of the cathode 11 and connecting the cathode 11 and the first cathode wiring 22A. Cathode wiring 24. In addition, one side 25 of the long sides of the first substrate 20A is provided with a mounting terminal portion 40 that is used when the first substrate 20A is electrically connected to another member at the center thereof.

  The first cathode wiring 22A is arranged in a U shape in plan view so as to face both short sides of the cathode 11 and the long side of the cathode 11 opposite to the side 25 side. The second cathode wiring 22B has an L shape in plan view, and one end of the second cathode wiring 22B is connected to each end of the first cathode wiring 22A. In addition, a connection terminal 23 is provided at the other end portion of each second cathode wiring 22B, and the connection terminal 23 constitutes a part of the mounting terminal portion 40 having a plurality of connection terminals so as to contact the side 25. Is provided.

  Since the first cathode wiring 22A is intended to reduce electrical resistance by being electrically connected to the cathode 11, it does not necessarily have a U-shape in plan view and is connected to the cathode 11 at least at one place (one side). It should be. In such a case, for example, the first cathode wiring 22A is disposed to face one side of the cathode 11, and the second cathode wiring 22B is formed on the side 25 from the end of the first cathode wiring 22A. Possible forms. Of course, since the electrical resistance is relatively lowered when the number of connection portions increases, two first cathode wirings 22A are arranged opposite to the two opposite sides of the cathode 11, and the cathode 11 and the first cathode wiring 22A are arranged on each side. And may be connected. Furthermore, in the present embodiment, the first cathode wiring 22A having a U-shape in plan view is used. However, the first cathode wiring 22A may surround the cathode 11 and be closed in plan view.

  The mounting terminal portion 40 is connected to various wirings provided in the organic EL device 1 by circuit wiring (not shown). The mounting terminal unit 40 is used when the organic EL device 1 and other members are electrically connected. The mounting terminal portion 40 may be plated with a highly conductive metal such as gold or silver as necessary to enhance the conductivity at the mounting terminal portion 40.

  The gas barrier layer 19 is formed except for the end portion of the mounting terminal portion 40 among these various wirings. The portion not exposed to the gas barrier layer 19 (exposed portion) includes a connection terminal 23 that constitutes a part of the mounting terminal portion 40. The bent portion of the second cathode wiring 22B is covered with the gas barrier layer 19.

  According to the organic EL device 1 having the above-described configuration, the first cathode wiring 22A is covered with the gas barrier layer 19, so that moisture is contained inside the device through the ITO formed on the surface of the first cathode wiring 22A. The display performance can be maintained by avoiding the deterioration of the display performance due to the deterioration of the light emitting element 21.

  In the present embodiment, the organic planarization layer 18 is formed between the plurality of light emitting elements 21 and the gas barrier layer 19. Therefore, the surface on which the gas barrier layer 19 is formed has less irregularities, and damage to the gas barrier layer 19 due to stress concentration at the irregularities can be suppressed. Therefore, it is possible to reliably prevent moisture from entering by the gas barrier layer 19.

  In the present embodiment, the contact angle θ at the peripheral end portion 35 of the organic planarizing layer 18 is 20 degrees or less. Therefore, the gas barrier layer 19 formed so as to cover the organic planarization layer 18 at the peripheral end portion 35 of the organic planarization layer 18 is formed without a steep angle corresponding to the base shape, and thus the organic planarization. It is possible to suppress damage to the gas barrier layer 19 at the peripheral edge portion 35 of the conversion layer 18.

In this embodiment, the gas barrier layer 19 is made of silicon nitride or silicon oxynitride, but silicon oxide may be used.
In that case, since silicon oxide has higher moisture permeability than silicon nitride or silicon oxynitride, it is desirable to form a film thicker than the gas barrier layer 19 formed using silicon nitride or silicon oxynitride.

(Method for manufacturing organic EL device)
Next, a method for manufacturing the organic EL device 1 will be described with reference to FIGS. FIG. 5 is a process flow diagram illustrating a method for manufacturing an organic EL device, FIG. 6 is a schematic plan view illustrating a layout of a first substrate on a mother substrate, and FIGS. 7 to 10 are schematic cross-sectional views illustrating a method for manufacturing an organic EL device. is there. The process flow diagram of FIG. 5 starts from the formation process (S1) of the cathode protective layer 17, but the known processes can be employed as described above.

In the present embodiment, as shown in FIG. 6, the plurality of first substrates 20 </ b> A are arranged and formed on the mother substrate W. At that time, in order to form more first substrates 20A, the adjacent first substrates 20A are in close contact with each other via a parting line. The longitudinal direction of the first substrate 20A arranged on the mother substrate W is the X direction, and the short direction is the Y direction.
The first substrate 20A has a side 25 having the mounting terminal portion 40 on one side on the longitudinal direction side among the four outer sides, and the first substrate 20A adjacent in the Y direction is in contact with the sides 25 having the mounting terminal portion 40. It has become.

(Cathode protective layer forming step S1)
First, as shown in FIG. 7A, the cathode protective layer 17 is formed on the first substrate 20A on which the layers up to the cathode 11 are stacked. For example, as described above, silicon nitride, silicon oxynitride, or the like is formed only in a desired region by using a metal mask or the like by a high-density plasma film forming method such as an ECR sputtering method or an ion plating method. At this time, the cathode protection layer 17 is continuously formed across the adjacent first substrates 20A in the film formation region 29 (see FIG. 6) in which the sides 27 facing the sides 25 having the mounting terminal portions 40 are in contact with each other. The

(Organic planarization layer forming step S2)
Next, as shown in FIG. 7B, the organic planarization layer 18 is formed on the cathode protective layer 17 for each first substrate 20A. Specifically, first, a material for forming the organic planarization layer 18 is placed by a screen printing method under a reduced pressure atmosphere. By disposing the material for forming the organic planarization layer 18 in a reduced pressure atmosphere, volatile impurities and moisture contained in the material for forming the organic planarization layer 18 and the screen mesh can be removed as much as possible. Further, in the screen printing method, the surface of the material disposed by the squeegee friction is forcibly flattened, so that the material surface can be flattened as compared with other material placement methods.

  Subsequently, the forming material of the arranged organic planarization layer 18 is cured by heating in the range of 60 ° C. to 120 ° C. This heat curing is performed in a nitrogen atmosphere in which moisture at atmospheric pressure is controlled to 10 ppm or less.

(Gas barrier layer forming step S3)
Next, as shown in FIG. 7C, the gas barrier layer 19 is formed on the organic planarization layer 18. Specifically, it is formed by a high density plasma film forming method such as an ECR sputtering method or an ion plating method. Note that before the formation, it is preferable to improve adhesion by oxygen plasma treatment because reliability is improved. Further, when the gas barrier layer 19 and the cathode protective layer 17 are formed of the same material during manufacturing, the manufacturing process and the manufacturing apparatus can be simplified. In such a case, a common mask can be used as the mask used when forming the gas barrier layer 19 and the mask used when forming the cathode protective layer 17. At this time, the gas barrier layer 19 extends over the adjacent first substrates 20A in the film formation region 29 (see FIG. 6) in which the sides 27 facing the sides 25 having the mounting terminal portions 40 are in contact with each other, like the cathode protective layer 17. The film is continuously formed.

(Cross sectional structure of the periphery)
Here, a cross-sectional structure after forming the sealing film will be described. In the arrangement of the first substrate in the conventional method of manufacturing the organic EL device shown in FIG. 16, the cross section of the C portion where the side opposite to the side having the mounting terminal portion 40 contacts is as shown in FIG. On the other hand, in the case of the arrangement shown in FIG. 6 of the present embodiment, the cross section of the D portion where the side 27 opposite to the side 25 having the mounting terminal portion 40 contacts is as shown in FIG. Comparing the two, it can be seen that in the layout of the present embodiment, the width of the frame portion of the side 27 opposite to the side 25 having the mounting terminal portion 40 is narrow. In the conventional arrangement shown in FIG. 16, this is a tolerance corresponding to the film formation accuracy in order to prevent the cathode protective layer 17 and the gas barrier layer 19 from being formed on the mounting terminal portions 40 of the first substrate 20A arranged next to each other. This is because the distance is taken. In the present embodiment, it is possible to reduce the width of the frame portion 4 without impairing the function of the sealing film. In addition, when the cathode protective layer 17 and the gas barrier layer 19 are formed, the width of the non-deposition area is widened, which makes it easy to form a mask to be used.

(Opposing glass pasting step S4)
Next, the side of the plurality of second substrates 31 that has been cut into a completed size in advance is attached in a form corresponding to the first substrate 20A arranged on the mother substrate W.

  As shown in FIG. 8A, a material for forming the seal layer 33 is disposed around the second substrate 31 on which the color filter layer 32 is formed. Specifically, the material for forming the seal layer 33 described above is applied around the second substrate 31 by a needle dispensing method.

  Next, as shown in FIG. 8B, the forming material for the adhesive layer 34 is arranged inside the sealing material 33 forming material arranged on the second substrate 31. Coating is performed using a jet dispensing method as an arrangement method. Since the viscosity of the forming material of the sealing layer 33 is sufficiently higher than the viscosity of the forming material of the adhesive layer 34, the forming material of the sealing layer 33 functions as a bank that prevents the forming material of the adhesive layer 34 from protruding. Can do.

  Next, as shown in FIG. 8C, the second substrate 31 coated with the seal layer 33 and the adhesive layer 34 is irradiated with ultraviolet rays. Then, since the forming material of the seal layer 33 including the photoreactive initiator reacts preferentially and starts curing, the viscosity of the forming material of the seal layer 33 is improved.

  Subsequently, as shown in FIG. 9A, curing of the first substrate 20A on which the gas barrier layer 19 shown in FIG. 7C is formed and the seal layer 33 shown in FIG. 8C is started. The second substrate 31 is bonded. At this time, the seal layer 33 is disposed so as to completely cover the peripheral end portion 35 of the organic planarization layer 18 formed on the first substrate 20A. This bonding step is performed in a reduced pressure atmosphere with a degree of vacuum of 1 Pa, and is held for 200 seconds at a pressure of 600 N for pressure bonding.

  Next, as shown in FIG. 9B, the organic EL device 1 bonded by pressure bonding is heated in the atmosphere to complete the curing of the forming material of the seal layer 33 and the adhesive layer 34.

(Division step S5)
The first substrate 20A arranged on the mother substrate W is divided into outer sizes, and the individual organic EL devices 1 are cut out. From the above, a desired organic EL device 1 can be manufactured.

  According to the manufacturing method of the organic EL device 1 described above, the frame portion 4 can be narrowed on the side 28 opposite to the side 25 having the mounting terminal portion 40. Specifically, the frame portion 4 can be narrowed by a length corresponding to the tolerance of the positional accuracy of the deposition area of the cathode protective layer 17 and the gas barrier layer 19.

(Second Embodiment)
Next, an organic EL device according to a second embodiment and a manufacturing method thereof will be described with reference to FIGS. FIG. 11 is a schematic cross-sectional view showing the structure of the first substrate in the organic EL device of the second embodiment, and FIG. 12 is a schematic cross-sectional view showing a method for manufacturing the organic EL device of the second embodiment.
As shown in FIG. 11, the organic EL device 2 according to the present embodiment includes a first substrate 20 </ b> A on which a plurality of light emitting elements 21 are arranged, and a cathode protective layer 17 formed by laminating the plurality of light emitting elements 21. Each of the inorganic planarization layer 26 and the gas barrier layer 19, and a second substrate 31 disposed opposite to the surface of the first substrate 20A on which the plurality of light emitting elements 21 are disposed. The first substrate 20 </ b> A and the second substrate 31 are bonded to each other via a seal layer 33 and an adhesive layer 34. That is, the organic planarization layer 18 of the first embodiment is replaced with the inorganic planarization layer 26. Other than that, the configuration is the same as that of the first embodiment except for the configuration of the sealing film in the periphery of the organic EL device 2.

(Cross sectional structure of the periphery)
Subsequently, a cross-sectional structure of the periphery of the organic EL device 2 in the present embodiment will be described. The peripheral portion of the organic EL device 2 includes the first cathode wiring 22A, the auxiliary cathode wiring 24, the cathode protection layer 17, the inorganic planarization layer 26, and the gas barrier layer between the first substrate 20A and the second substrate 31 described above. 19, the seal layer 33 is sequentially laminated. Further, the seal layer 33 is formed outside the partition wall 13 formed at a position closest to the outermost side of the apparatus.

  On the cathode protective layer 17, an inorganic planarization layer 26 is formed inside the cathode protective layer 17. The inorganic flattening layer 26 is disposed so as to fill the uneven portion of the cathode protective layer 17 formed in an uneven shape due to the influence of the shape of the partition wall 13, and the upper surface thereof is formed substantially flat. The inorganic planarization layer 26 has a function of relieving stress generated by warping and volume expansion of the first substrate 20A and preventing the cathode protective layer 17 from peeling off from the barrier ribs 13. In addition, since the upper surface of the inorganic flattening layer 26 is substantially flattened, a gas barrier layer 19 (to be described later) made of a hard film formed on the inorganic flattened layer 26 is also flattened. Therefore, there is no portion where stress is concentrated, and thereby, generation of cracks in the gas barrier layer 19 can be prevented.

The inorganic planarization layer 26 uses a coating type material. A low temperature curing type polysilazane is desirable.
Thereby, it can be formed by spin coating or printing.

  The inorganic flattening layer 26 has characteristics excellent in gas barrier properties as compared with the organic flattening layer 18 of the first embodiment. Therefore, it is not necessary to completely cover the outer peripheral edge of the sealing film with the cathode protective layer 17 and the gas barrier layer 19 that are more excellent in gas barrier properties. Therefore, a shape suitable for narrowing the frame can be taken.

  In the present embodiment, the layout for the mother substrate W is the same as that of the first embodiment.

Here, a cross-sectional structure after forming the sealing film will be described. In the arrangement of the first substrate in the conventional method of manufacturing the organic EL device shown in FIG. 16, the cross section of the C portion where the side opposite to the side having the mounting terminal portion 40 contacts is as shown in FIG. On the other hand, in the case of the arrangement of FIG. 6 shown in the present embodiment, the cross section of the D portion where the sides 27 opposite to the sides 25 having the mounting terminal portions 40 are in contact with each other is as shown in FIG. When comparing the two, in the layout of the present embodiment, the cathode protective layer 17, the inorganic planarization layer 26, and the gas barrier layer 19 straddle the adjacent first substrate 20A on the side opposite to the mounting terminal portion 40. It is formed. Therefore, it can be seen that the width of the frame portion is narrow. In the conventional arrangement shown in FIG. 16, this is a tolerance corresponding to the film formation accuracy in order to prevent the cathode protective layer 17 and the gas barrier layer 19 from being formed on the mounting terminal portions 40 of the first substrate 20A arranged next to each other. This is because the distance is taken. In the present embodiment, it is possible to reduce the width of the frame portion 4 without impairing the function of the sealing film. In addition, when the cathode protective layer 17 and the gas barrier layer 19 are formed, the width of the non-deposition area is widened, which makes it easy to form a mask to be used.
In addition, since the inorganic planarization layer 26 having high sealing performance is used, the cathode protective layer 17 may be omitted. That is, the inorganic planarization layer 26 and the gas barrier layer 19 may be formed across the adjacent first substrates 20A at the portions where the sides 27 where the mounting terminal portions 40 are not disposed are in contact with each other.

(Third embodiment)
Next, an organic EL device according to a third embodiment and a manufacturing method thereof will be described with reference to FIG.
FIG. 13 is a schematic plan view showing the layout of the first substrate in the mother substrate of the third embodiment.
The organic EL device 5 in this embodiment is different from the first embodiment in that the mounting terminal portions 40 are provided on two orthogonal sides of the first substrate 20A. The same components as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof is omitted.

As shown in FIG. 13, in the layout method of the first substrate 20A in the present embodiment, in order to form more first substrates 20A, the adjacent first substrates 20A are separated from each other in the same manner as in the first embodiment. The layout is in close contact with each other. The longitudinal direction of the first substrate 20A arranged on the mother substrate W is the X direction, and the short direction is the Y direction.
The first substrate 20 </ b> A has a side 25 a having the mounting terminal portion 40 on one side on the longitudinal direction side among the four outer sides, and a side 27 not having the mounting terminal portion 40 facing the side 25 a having the mounting terminal portion 40. Have. Similarly, a side 25b having the mounting terminal portion 40 is provided on one side in the short direction side, and a side 28 not having the mounting terminal portion 40 facing the side 25b having the mounting terminal portion 40 is provided. The first substrates 20A adjacent in the Y direction are in contact with the sides 25a having the mounting terminal portions 40, and the first substrates 20A adjacent in the X direction are also in contact with the sides 25b having the mounting terminal portions 40. That is, the layout is such that all the adjacent first substrates 20A are opposite in rotation angle of 180 ° in both the X direction and the Y direction.

  According to the present embodiment, the frame portion 4 can be narrowed on the sides 27 and 28 opposite to the sides 25 a and 25 b having the mounting terminal portion 40. Specifically, the frame portion 4 can be narrowed by a length corresponding to the tolerance of the positional accuracy of the deposition area of the cathode protective layer 17 and the gas barrier layer 19.

(Fourth embodiment)
<Electronic equipment>
Next, the electronic apparatus of this embodiment will be described with reference to FIG. FIG. 14A is a perspective view showing an example of a mobile phone. In FIG. 14A, reference numeral 50 indicates a mobile phone main body, and reference numeral 51 indicates a display unit including the organic EL device 1.
FIG. 14B is a perspective view illustrating an example of a portable information processing apparatus such as a word processor or a personal computer. In FIG. 14B, reference numeral 60 denotes an information processing apparatus, reference numeral 61 denotes an input unit such as a keyboard, reference numeral 63 denotes an information processing body, and reference numeral 62 denotes a display unit including the organic EL device 1.
FIG. 14C is a perspective view showing an example of a wristwatch type electronic apparatus. In FIG. 14C, reference numeral 70 indicates a wristwatch body, and reference numeral 71 indicates an EL display unit provided with the organic EL device 1.
The electronic apparatus shown in FIGS. 14A to 14C includes the organic EL device 1 shown in the previous embodiment. Therefore, since the frame portion is narrower than the conventional one, the display area can be relatively enlarged, and a small electronic device with good visibility can be provided.

  The electronic device is not limited to the mobile phone 50, the portable information processing device 60, and the wristwatch-type electronic device 70, and can be applied to various electronic devices. For example, desktop computers, liquid crystal projectors, multimedia personal computers (PCs) and engineering workstations (EWS), pagers, word processors, TVs, viewfinder type or monitor direct view type video tape recorders, electronic notebooks, electronic The present invention can be applied to electronic devices such as a desktop computer, a car navigation device, a POS terminal, and a device having a touch panel.

Various modifications other than the above embodiment are conceivable. Hereinafter, a modification will be described.
(Modification 1) The structure of the organic EL device in the above embodiment is not limited to this. For example, it is implemented in a structure without the seal layer 33, a structure in which the color filter layer 32 is formed directly on the sealing film (gas barrier layer 19) instead of the second substrate 31, and a structure without the second substrate 31. Is possible.

  (Modification 2) The gas barrier layer 19 is not limited to an inorganic material. For example, a resin material with low gas permeability may be used. Compared to inorganic materials, defects such as cracks after film formation are less likely to occur.

  DESCRIPTION OF SYMBOLS 1, 2, 5 ... Organic electroluminescent apparatus, 3 ... Display area, 10 ... Anode (electrode), 11 ... Cathode (electrode), 12 ... Light emitting layer (organic light emitting layer), 18 ... Organic planarization layer, 19 ... Gas barrier 20A ... first substrate, 20 ... substrate body, 21 ... light emitting element, 22A ... first cathode wiring, 22B ... second cathode wiring, 23 ... connection terminal, 31 ... protective substrate, 33 ... sealing layer, 34 ... adhesion 35, peripheral edge of organic planarization layer, 40 ... mounting terminal, 50 ... mobile phone (electronic device), 60 ... portable information processing device (electronic device), 70 ... wristwatch (electronic device).

Claims (5)

An organic EL device manufacturing method including a sealing film forming step of forming a sealing film for sealing a light emitting element provided on a first substrate,
A plurality of the first substrates are laid out in a matrix on the mother substrate, and at least some of the plurality of first substrates are laid out so that mounting terminal portions face each other,
In the sealing film forming step, the sealing film is formed across at least two of the first substrates in a portion laid out so that opposite sides of the mounting terminal portion face each other. Device manufacturing method. It is a manufacturing method of the organic EL device according to claim 1,
The sealing film includes an organic planarization layer and a gas barrier layer,
The organic planarization layer is formed for each of the first substrates, and the gas barrier layer is formed across at least two of the first substrates in a portion laid out so that opposite sides of the mounting terminal portions face each other. And It is a manufacturing method of the organic EL device according to claim 1,
The sealing film includes a cathode protective layer, an organic planarization layer, and a gas barrier layer, and the organic planarization layer is formed for each of the first substrates, and is laid out so that opposite sides of the mounting terminal portion face each other. In part, the cathode protective layer and the gas barrier layer are formed across at least two of the first substrates. It is a manufacturing method of the organic EL device according to claim 1,
The sealing film includes an inorganic planarization layer and a gas barrier layer,
The inorganic planarization layer and the gas barrier layer are formed across at least two of the first substrates in a portion laid out so that opposite sides of the mounting terminal portion face each other.   An electronic apparatus comprising an organic EL device manufactured using the method for manufacturing an organic EL device according to claim 1.

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