JP5741046B2 - Electro-optical device, method of manufacturing electro-optical device, and electronic apparatus - Google Patents

Description

  The present invention relates to an electro-optical device, a method for manufacturing the electro-optical device, and an electronic apparatus.

  With the diversification of information equipment, there is an increasing need for electro-optical devices capable of flat display. As one of such electro-optical devices, an organic EL device that displays an image using light emission generated by applying a current to an organic EL (electroluminescence) layer is known. There has been a problem that the organic EL layer is denatured by moisture and becomes difficult to emit light. In order to prevent this, a structure is used in which a sealing film that prevents moisture from entering is formed so as to cover the organic EL layer. For example, Patent Document 1 presents an aspect in which a sealing film covers a region wider than a protective substrate.

  The organic EL device disclosed in Patent Document 1 employs an active matrix system using a thin film transistor (hereinafter referred to as TFT) as a switching element of a pixel including an organic EL layer.

JP 2009-176756 A

In recent years, pixel miniaturization has progressed and the number of terminals tends to increase. In addition, the frame area surrounding the effective display area is becoming narrower.
Therefore, in the case of providing a plurality of terminals in the terminal portion, in the structure of Patent Document 1, it is necessary to narrow the arrangement pitch of the terminals as the number of terminals increases, and an electrically sufficient contact region in the terminals is ensured. There was a problem that it was difficult. Specifically, since the sealing film is disposed so as to overlap with a part of the terminal, there is a problem that the contact area is reduced and it is very difficult to ensure electrical conduction.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

  Application Example 1 An electro-optical device according to this application example has a light emission provided on a substrate between a first electrode, a second electrode, and the first electrode and the second electrode. A light-emitting region provided with a light-emitting element, a terminal portion provided outside the light-emitting region, and a seal provided so as to cover the entire surface of the light-emitting region and at least a part of the terminal portion. The film, the first wiring provided in the terminal portion and electrically connected to the light emitting element, and the first wiring provided on the sealing film in the terminal portion and electrically connected to the first wiring And a second wiring.

  In the case of the electro-optical device having such a configuration, even when the sealing film covers at least one part of the terminal portion, the second wiring electrically connected to the first wiring is formed on the sealing film. Therefore, the wiring contact area between the first wiring and the external electric circuit can be increased by the second wiring. That is, by increasing the wiring contact area using the second wiring as a terminal for connecting to the external electric circuit, the electrical connection between the light emitting element and the external electric circuit can be easily and reliably performed.

  In addition, since at least a part of the second wiring is provided on the sealing film, a wiring contact area can be secured without expanding a region where the second wiring is formed to the outer peripheral side of the substrate. A narrow frame can be achieved.

  Application Example 2 In the electro-optical device according to the application example described above, a light-shielding film that shields at least a part of light emitted from the light-emitting layer is provided on the sealing film in the light-emitting region. The second wiring and the light shielding film are made of the same material.

  With such a configuration, the second wiring and the light shielding film can be formed in the same process, and the number of manufacturing processes can be reduced.

  Application Example 3 In the electro-optical device according to the application example, the second wiring includes a first portion in contact with the first wiring and a second portion in contact with the sealing film. The first portion is formed with the same line width as the first wiring, and the second portion has a line width larger than that of the first portion in plan view.

  According to such a configuration, it is possible to increase the distance between the second wirings as compared with the case where the second wirings are linearly arranged at intervals in a plan view. That is, if the second wiring is used as a terminal and the connection with the external electric circuit is the second wiring, the connection with the external electric circuit can be easily performed even when the arrangement pitch of the first wiring is narrowed. An electro-optical device can be provided.

Application Example 4 An electronic apparatus according to this application example includes the electro-optical device according to the application example described above.
With the electronic apparatus having such a configuration, the electrical connection between the electro-optical device and the external electric circuit can be easily and reliably performed.

  Application Example 5 Further, in the electro-optical device manufacturing method according to the application example, the first electrode, the second electrode, and the first electrode and the second electrode are formed on the substrate. A first step of forming a light emitting element having a light emitting layer provided; and a second step of forming a first wiring so as to be electrically connected to the light emitting element outside the light emitting element. A third step of forming a sealing film so as to cover the entire surface of the light emitting element and at least a part of the first wiring; and on the sealing film and the first wiring outside the light emitting element, And a fourth step of forming a second wiring electrically connected to the first wiring.

  With such a method of manufacturing an electro-optical device, it is possible to manufacture an electro-optical device that is excellent in sealing performance and that realizes an expansion of a wiring contact area and a narrowed frame.

  Application Example 6 In the method of manufacturing the electro-optical device according to the application example, the fourth step includes a step of forming a light shielding film on the sealing film on the light emitting element, The second wiring is formed using the same material.

  With such a method of manufacturing an electro-optical device, the second wiring and the light shielding film can be formed in the same process, and the number of manufacturing processes can be reduced.

  Application Example 7 In the method of manufacturing the electro-optical device according to the application example, the second wiring includes a first portion in contact with the first wiring and a second portion in contact with the sealing film. And in the fourth step, the first portion is formed with the same line width as the first wiring, and the second portion has a larger area than the first portion in plan view. It is characterized by forming.

  With such a method for manufacturing an electro-optical device, it is possible to increase the distance between the second wirings as compared with the case where the second wirings are linearly arranged with a space therebetween. That is, when the second wiring on the sealing film is used as a terminal, an electro-optical device that can be easily connected to an external electric circuit even when the arrangement pitch of the first wiring is narrowed is manufactured. it can.

FIG. 2 is an equivalent circuit diagram illustrating an electrical configuration of the organic EL device according to the embodiment. The top view which shows typically the structure of the organic electroluminescent apparatus in 1st Embodiment. The schematic sectional drawing which shows typically the structure of the organic electroluminescent apparatus in 1st Embodiment along the YO line of FIG. The schematic plan view which shows the layout of the wiring in the terminal part of the organic electroluminescent apparatus of 1st Embodiment. (A)-(c) is process drawing by the side of the element substrate which shows the manufacturing method of the organic electroluminescent apparatus in 1st Embodiment. (A)-(c) is process drawing by the side of the sealing substrate which shows the manufacturing method of the organic electroluminescent apparatus in 1st Embodiment. (A) And (b) is process drawing which shows the manufacturing method of the organic electroluminescent apparatus in 1st Embodiment. The schematic sectional drawing which shows the structure of the organic electroluminescent apparatus in 2nd Embodiment. The enlarged plan view of the terminal part of the organic electroluminescent apparatus in 3rd Embodiment. (A)-(c) is schematic which shows the example of the electronic device in this embodiment.

  Hereinafter, an embodiment in which the electro-optical device of the present invention is embodied will be described by taking an organic EL device that displays an image by regularly arranging organic EL elements as light emitting elements in an image display region. In the drawings shown below, the dimensions and ratios of the respective components are appropriately changed from the actual ones in order to make the respective components large enough to be recognized on the drawings.

  In the following embodiments, for example, when “on the substrate” is described, the substrate is disposed so as to be in contact with the substrate, or is disposed on the substrate via another component, or the substrate. It is assumed that a part is arranged so as to be in contact with each other and a part is arranged via another component.

(First embodiment)
<Organic EL device>
FIG. 1 is an equivalent circuit diagram showing an electrical configuration of an organic EL device as an electro-optical device of the present embodiment.

  As shown in FIG. 1, the organic EL device 1 is of an active matrix type using a thin film transistor (hereinafter referred to as TFT) as a switching element, and includes a plurality of scanning lines 101 and each scanning line 101. Each of the intersections of the scanning line 101 and the signal line 102 with a wiring configuration comprising a plurality of signal lines 102 extending in a direction perpendicular to the signal line and a plurality of power supply lines 103 extending in parallel with each signal line 102. A pixel region E is formed in the vicinity.

  Of course, according to the technical idea of the present invention, the organic EL device 1 is not limited to the active matrix system using TFTs or the like, but may have a simple matrix system configuration.

  A data line driving circuit 100 including a shift register, a level shifter, a video line, and an analog switch is connected to the signal line 102. Further, a scanning line driving circuit 80 having a shift register and a level shifter is connected to the scanning line 101.

  Further, in each pixel region E, a switching TFT 112 to which a scanning signal is supplied to the gate electrode via the scanning line 101 and a pixel signal shared from the signal line 102 via the switching TFT 112 are held. A capacitor 113, a driving TFT 123 to which a pixel signal held by the holding capacitor 113 is supplied to the gate electrode, and driving from the power line 103 when electrically connected to the power line 103 through the driving TFT 123 A light emitting layer (organic light emitting layer) 12 provided between the anode 10 as a first electrode into which a current flows and a cathode 11 as the second electrode is provided.

  According to the organic EL device 1, when the scanning line 101 is driven and the switching TFT 112 is turned on, the potential of the signal line 102 at that time is held in the holding capacitor 113, and according to the state of the holding capacitor 113. The on / off state of the driving TFT 123 is determined. Then, current flows from the power supply line 103 to the anode 10 through the channel of the driving TFT 123, and further current flows to the cathode 11 through the light emitting layer 12. The light emitting layer 12 emits light according to the amount of current flowing through it. A light emitting element 21 is constituted by the anode 10, the cathode 11, and the light emitting layer 12 provided between these electrodes.

  Next, specific modes of the organic EL device 1 of the present embodiment will be described with reference to FIGS. Here, FIG. 2 is a plan view schematically showing the configuration of the organic EL device. FIG. 3 is a schematic cross-sectional view schematically showing the structure of the organic EL device along the Y0 line of FIG. FIG. 4 is a schematic plan view showing a wiring layout in the terminal portion of the organic EL device.

  First, the configuration of the organic EL device 1 will be described with reference to FIG. FIG. 2 is a diagram showing a TFT element substrate (hereinafter referred to as “element substrate”) 20 </ b> A that causes the light emitting layer 12 to emit light by the above-described various wirings, TFTs, and various circuits formed on the substrate body 20.

  The element substrate 20A of the organic EL device 1 includes a light emitting region 4 (inside the two-dot chain line in FIG. 2) in the center portion and a dummy region 5 (a portion between the one-dot chain line and the two-dot chain line) arranged around the light emitting region 4. Region) and a terminal portion 210 provided outside the device region 200 are provided.

  In the light emitting region 4, a light emitting element 21 that emits one of red (R), green (G), and blue (B) light is formed. In the light emitting region 4, the light emitting elements 21 are arranged in a matrix. Each of the light emitting elements 21 has a so-called stripe arrangement arranged in the same color in the YO line direction of FIG. 2, and performs full color display.

  Scanning line drive circuits 80 are arranged on both sides of the light emitting region 4 in FIG. 2 and on the lower layer side of the dummy region 5. Further, a data line driving circuit 100 is disposed above the light emitting area 4 in FIG. 2 and below the dummy area 5.

  Further, a power supply line 103 is provided around the scanning line drive circuit 80 and the data line drive circuit 100, and a cathode wiring 202 is provided outside the power supply line 103. The cathode wiring 202 is electrically connected to the cathode 11. The scanning line driving circuit 80, the data line driving circuit 100, the power supply line 103, and the cathode wiring 202 are a plurality of elements to be described later in the terminal portion 210 of the element substrate 20A that protrudes outward from the sealing substrate 31 disposed to face the element substrate 20A. Is electrically connected to an external circuit (not shown) through the wiring.

(Cross-section structure)
Next, a cross-sectional structure of the organic EL device 1 will be described with reference to FIG.

  The organic EL device 1 in the present embodiment is a so-called “top emission structure” organic EL device. In the top emission structure, since light is extracted from the sealing substrate 31 side instead of the element substrate 20A side, there is an effect that a wide light emitting area can be secured without being affected by the size of various circuits arranged on the element substrate 20A. Therefore, luminance can be secured while suppressing voltage and current, and the lifetime of the light-emitting element can be maintained long.

  As shown in FIG. 3, the organic EL device 1 includes a plurality of light emitting elements 21 having an anode 10, a cathode 11, and a light emitting layer 12 (organic light emitting layer) provided between the anode 10 and the cathode 11 (a pair of electrodes). And an element substrate 20A (substrate) having a pixel partition wall 13 that divides the light emitting element 21, and a sealing substrate 31 disposed to face the element substrate 20A.

(Element board)
In the organic EL device 1, an inorganic insulating layer 14 made of silicon nitride or the like is coated on the element substrate 20A on which the above-described various wirings (for example, TFTs) are formed. Further, a contact hole (not shown) is formed in the inorganic insulating layer 14, and the above-described anode 10 is connected to the driving TFT 123. On the inorganic insulating layer 14, a planarizing layer 16 is formed in which a metal reflector 15 made of an aluminum alloy or the like is housed.

  On the planarizing layer 16, a light emitting element 21 having an anode 10, a cathode 11, and a light emitting layer 12 provided between the anode 10 and the cathode 11 is formed. An insulating pixel partition wall 13 is arranged so as to partition the light emitting element 21.

  In the present embodiment, the anode 10 is a metal oxide conductive film such as ITO (Indium Tin Oxide) having a work function of 5 eV or more and high hole injection property.

  In this embodiment, since the organic EL device 1 has a top emission structure, the anode 10 does not necessarily need to use a light-transmitting material, and may use a metal electrode made of light-reflective aluminum or the like. . When this configuration is adopted, the above-described metal reflector 15 need not be provided.

  As a material for forming the cathode 11, a transparent conductive material having optical transparency is used because the present embodiment has a top emission structure. As the transparent conductive material, ITO is suitable, but other than this, for example, an indium oxide / zinc oxide based amorphous transparent conductive film (Indium Zinc Oxide: IZO) is used. be able to. In the present embodiment, ITO is used.

  The cathode 11 is preferably made of a material having a large electron injection effect (a work function of 4 eV or less). For example, calcium, magnesium, sodium, lithium metal, or a metal compound thereof. Examples of the metal compound include metal fluorides such as calcium fluoride, metal oxides such as lithium oxide, and organometallic complexes such as acetylacetonato calcium. In addition, these materials alone have high electrical resistance and do not function as electrodes, so patterning a metal layer such as aluminum, gold, silver, or copper to avoid the light emitting part, or transparent metals such as ITO or tin oxide You may use in combination with the laminated body with an oxide conductive layer.

  In the present embodiment, a laminate of lithium fluoride, magnesium-silver alloy, and ITO is used by adjusting the film thickness to obtain transparency.

  The light emitting layer 12 employs a white light emitting layer that emits white light. The white light emitting layer is formed on the entire surface of the element substrate 20A using a vacuum deposition process. As the white light-emitting material, a styrylamine-based light-emitting material and an anthracene-based dopant (blue), or a styrylamine-based light-emitting material and a rubrene-based dopant (yellow) are used.

  A triarylamine (ATP) multimer hole injection layer, a TPD (triphenyldiamine) hole transport layer, and an aluminum quinolinol (Alq3) layer (electron transport layer) are formed on the lower layer or the upper layer of the light emitting layer 12. It is preferable to do.

  Further, an electrode protective layer 17 (protective layer) is formed on the cathode 11 and covers the light emitting element 21 and the pixel partition wall 13.

  The electrode protective layer 17 is preferably composed of a silicon compound such as silicon oxynitride in consideration of transparency, adhesion, water resistance, and gas barrier properties. The film thickness of the electrode protective layer 17 is preferably 100 nm or more, and the upper limit of the film thickness is preferably set to 200 nm or less in order to prevent generation of cracks due to stress generated by covering the pixel partition walls 13.

  In the present embodiment, the electrode protective layer 17 is formed as a single layer, but may be stacked as a plurality of layers.

  An organic buffer layer 18 is formed on the electrode protective layer 17 and covers the electrode protective layer 17.

  The organic buffer layer 18 is disposed so as to fill the uneven portion of the electrode protection layer 17 formed in a concavo-convex shape due to the influence of the shape of the pixel partition wall 13, and the upper surface thereof is formed substantially flat. The organic buffer layer 18 has a function of relieving stress generated by warping or volume expansion of the element substrate 20A and preventing the electrode protective layer 17 from peeling from the pixel partition wall 13 having an unstable shape. In addition, since the upper surface of the organic buffer layer 18 is substantially flattened, a gas barrier layer 19 (to be described later) made of a hard film formed on the organic buffer layer 18 is also flattened. Therefore, there is no portion where stress is concentrated, thereby preventing generation of cracks in the gas barrier layer 19.

  The organic buffer layer 18 is preferably an organic compound material that is excellent in fluidity and free of solvents and volatile components and is a raw material of a polymer skeleton, for example, an epoxy group, because it is formed by screen printing under reduced pressure vacuum. An epoxy monomer / oligomer having a molecular weight of 3000 or less is used (monomer definition: molecular weight 1000 or less, oligomer definition: molecular weight 1000 to 3000).

  Furthermore, additives such as a silane coupling agent that improves the adhesion to the electrode protective layer 17 and the gas barrier layer 19, a water capturing agent such as an isocyanate compound, and fine particles that prevent shrinkage during curing may be mixed. Further, since the printing is performed under a reduced pressure atmosphere, the water content is preferably adjusted to 0.01 wt% (100 ppm) or less in order to make it difficult for bubbles to be generated when applied.

  The viscosity of the organic buffer layer 18 is preferably 1000 mPa · s (room temperature: 25 ° C.) or more. This is because it does not penetrate into the light emitting layer 12 immediately after the application and does not generate a non-light emitting region called a dark spot. Further, the optimum film thickness of the organic buffer layer 18 is preferably 1 μm to 10 μm. When the organic buffer layer 18 is thicker, foreign matter is mixed in to prevent defects in the gas barrier layer 19. However, when the combined thickness of the organic buffer layer 18 exceeds 10 μm, the coloring layer 32 a and the light emitting layer 12 described later Since the distance increases and the light escaping to the side increases, the light extraction efficiency decreases. In addition, the thickness of 1 μm or less is insufficient to flatten the pixel partition wall 13.

  On the organic buffer layer 18, a gas barrier layer 19 is formed as the sealing film 53 in a wide range so as to cover the organic buffer layer 18 and cover the terminal portion of the electrode protective layer 17.

  The gas barrier layer 19 is for preventing oxygen and moisture from entering, and thereby, deterioration of the light emitting element 21 due to oxygen and moisture can be suppressed. In consideration of transparency, gas barrier properties, and water resistance, the gas barrier layer 19 is preferably formed of a silicon compound containing nitrogen, that is, silicon nitride, silicon oxynitride, or the like.

  Furthermore, the gas barrier layer 19 may have a laminated structure, or may have a configuration in which the composition is not uniform, and particularly, the oxygen concentration changes continuously or discontinuously. In addition, as for the film thickness at the time of setting it as a laminated structure, 200 nm-400 nm are preferable as a 1st gas barrier layer, and if it is less than 200 nm, the surface and side surface coating | cover of the organic buffer layer 18 will run short. As a 2nd gas barrier layer which improves the coverage of a foreign material etc., 200 nm-800 nm are preferable. When the total thickness exceeds 1000 nm, the occurrence frequency of cracks is increased, and this is not preferable from the economical viewpoint.

  Further, in the present embodiment, since the organic EL device 1 has a top emission structure, the gas barrier layer 19 needs to have light transmittance. Therefore, by appropriately adjusting the material and the film thickness, the present embodiment Then, the light transmittance in the visible light region is set to 80% or more, for example.

(Sealing substrate)
A sealing substrate 31 is disposed opposite to the element substrate 20A on which the gas barrier layer 19 is formed. The sealing substrate 31 is a substrate having a function of protecting the gas barrier layer 19 and a light transmitting property. For example, inorganic materials such as glass, quartz glass, and silicon nitride, acrylic resin, polycarbonate resin, polyethylene terephthalate resin, polyolefin resin, and the like. The organic polymer (resin) can be used. In addition, a composite material formed by laminating or mixing the above materials can be used as long as it has optical transparency. Among them, a glass substrate is particularly preferably used in order to match the thermal expansion coefficient with the element substrate 20A in order to provide high transparency and moisture resistance and to impart heat resistance.

  A color filter layer 32 is formed on the surface of the sealing substrate 31 facing the element substrate 20A. In the color filter layer 32, a colored layer 32a that modulates transmitted light into any one of red (R), green (G), and blue (B) is arranged in a matrix. Each of the colored layers 32 a is disposed to face the white light emitting layer 12 formed on the anode 10. As a result, the light emitted from the light emitting layer 12 passes through each of the colored layers 32a and is emitted to the viewer as red light, green light, and blue light to perform color display.

  Further, a black matrix layer 32b that prevents light leakage and improves visibility is formed between adjacent colored layers 32a and around the colored layer 32a. The black matrix layer 32 b is formed so as to extend to a region where a part thereof overlaps the seal layer 33 in plan view. Therefore, it is possible to efficiently prevent light leakage from the side of the apparatus and improve the image quality.

  In addition to the color filter layer 32, the sealing substrate 31 may be provided with a functional layer such as a layer that blocks or absorbs ultraviolet rays, an antireflection film, or a heat dissipation layer.

  The element substrate 20A and the sealing substrate 31 are sandwiched between the sealing layer 33 disposed in the vicinity of the outer peripheral portion of the element substrate 20A and the element substrate 20A and the sealing substrate 31 in a region surrounded by the sealing layer 33. The filler layer 34 is bonded together. The seal layer 33 is formed at least inside the region where the gas barrier layer 19 is formed so that the gas barrier layer 19 extends in the terminal portion 210. That is, the element region 200 is a central region in the drawing up to the sealing layer 33 including the light emitting region 4 and the dummy region 5 on the element substrate 20A in plan view.

  This seal layer 33 has an embankment function for improving the positional accuracy of the bonding of the element substrate 20A and the sealing substrate 31 and preventing the filling layer 34 to be described later from protruding, and is an epoxy that is cured by ultraviolet rays to improve the viscosity. It consists of materials.

  The thickness of the sealing layer 33 is preferably 1 μm to 25 μm. In addition, in order to regulate the distance between the element substrate 20A and the sealing substrate 31, a mixture of spherical particles made of an organic material having a predetermined particle diameter is preferable. The sealing layer 33 is usually mixed with inorganic particles in the form of flakes or lumps to increase the viscosity. However, since the various wirings and the gas barrier layer 19 described above are damaged during bonding and bonding, this embodiment is used. In the organic EL device 1, spherical particles of an organic material having a low elastic modulus are mixed in the seal layer 33.

  A filling layer 34 made of a thermosetting resin is formed inside the element substrate 20 </ b> A and the sealing substrate 31 and surrounded by the seal layer 33.

  The filling layer 34 is filled without gaps in the organic EL device 1 surrounded by the sealing layer 33 described above, and fixes the sealing substrate 31 disposed to face the element substrate 20A, and also provides an external machine. It has a buffering function against an impact and protects the light emitting layer 12 and the gas barrier layer 19.

  The packed layer 34 is preferably an organic compound material that is excellent in fluidity and does not have a volatile component such as a solvent as a raw material main component before curing. For example, an epoxy monomer / oligomer having an epoxy group and a molecular weight of 3000 or less is used. (Definition of monomer: molecular weight 1000 or less, definition of oligomer: molecular weight 1000 to 3000).

  The film thickness of the filling layer 34 is preferably 1 μm to 20 μm. In addition, in order to regulate the distance between the element substrate 20 </ b> A and the sealing substrate 31, a mixture of particles made of an organic material having a predetermined particle diameter is preferable. Similarly to the sealing layer 33 described above, the organic EL device 1 according to the present embodiment is mixed with spherical particles of an organic material having a low elastic modulus. By mixing the particles with an organic material having a low elastic modulus in the filling layer 34, the above-described damage to the gas barrier layer 19 can be prevented.

  In addition, the sealing substrate 31 disposed opposite to the element substrate 20A is provided for the purpose of protecting the optical characteristics and the gas barrier layer 19. The material of the sealing substrate 31 is preferably glass or transparent plastic (polyethylene terephthalate, acrylic resin, polycarbonate, polyolefin, etc.). The sealing substrate 31 may be provided with functional layers such as an ultraviolet blocking / absorbing layer, a light reflection preventing layer, and a heat dissipation layer.

  Next, with reference to FIG. 3 and FIG. 4, a cross-sectional and planar configuration of the terminal portion 210 provided outside the element region 200 will be described.

  As shown in FIG. 3, the terminal portion 210 provided outside the element region 200 includes a first wiring 51 extending from the element region 200 and electrically connected to the light emitting element 21, and a terminal portion 210. And a second wiring 52 electrically connected to the first wiring 51. The first wiring 51 electrically connected to the light emitting element 21 includes, for example, the scanning line driving circuit 80, the data line driving circuit 90, the power supply line 103, the cathode wiring 202, the scanning line 101, the signal line 102, the TFT, and the like. This is a so-called routing wiring that is routed to the terminal portion 210 to be electrically connected to any one of the light emitting elements 21.

The terminal portion 210 includes a sealing film covering portion 220 in which the sealing film 53 extends from the element region 200 and covers the first wiring 51, and an exposed portion 230 in which at least a part of the first wiring 51 is exposed. It is configured.
Further, the second wiring 52 is formed on the sealing film 53 of the sealing film covering part 220 and the first wiring 51 in the exposed part 230. That is, the second wiring 52 is formed across the sealing film covering portion 220 and the exposed portion 230.

  The first wiring 51 and the second wiring 52 are in direct contact with each other at the exposed portion 230 to ensure electrical connection. Alternatively, the first wiring 51 and the second wiring 52 may be electrically connected through a connection portion such as a contact hole that penetrates the sealing film 53. The material for forming the first wiring 51 and the second wiring 52 is not particularly limited as long as it is a conductive material. For example, the first wiring 51 and the second wiring 52 are formed by photolithography using Al, low-resistance Si, or the like.

  As shown in FIG. 4, the first wiring 51 and the second wiring 52 have a substantially rectangular shape in plan view in the sealing film covering portion 220 and the exposed portion 230, and at least in the exposed portion 230, the same lines so as to overlap each other. It is formed with a width. In the exposed portion 230, the first wiring 51 and the second wiring 52 need to be electrically connected. Therefore, in consideration of securing the wiring contact area and the ease of the manufacturing method, they are formed with the same line width. However, since it is not necessary to electrically connect the first wiring 51 and the second wiring 52 in the sealing film covering portion 220, the first wiring 51 and the second wiring are not required in the sealing film covering portion 220. 52 need not have the same line width.

FIG. 3 shows an example in which the end portions of the first wiring 51 and the second wiring 52 match each other, but they do not necessarily have to match. That is, the exposed portion 230 of the first wiring 51 and the second wiring 52 only need to be in partial contact with each other to ensure electrical connection, so that the second wiring 52 covers the first wiring 51, A configuration in which a part of the first wiring 51 is exposed from the second wiring 52 may be used. In either case, the patterns of the first wiring 51 and the second wiring 52 do not have to be matched, and therefore, it is possible to easily carry out a manufacturing method with low pattern accuracy.

<Method for manufacturing organic EL device>
Next, a method for manufacturing the organic EL device 1 according to this embodiment will be described with reference to FIGS. Here, FIG. 5 is a process diagram for forming a layer structure in which various protective layers are laminated on the element substrate 20A of the organic EL device 1, and FIG. 6 shows a material for forming a sealing layer and an adhesive layer on the sealing substrate 31. FIG. 7 is a process diagram for bonding the sealing substrate 31 and the element substrate 20 </ b> A to the organic EL device 1.

  First, as shown in FIG. 5A, the electrode protective layer 17 is formed on the element substrate 20A on which the cathode 11 is laminated. For example, as described above, silicon nitride, silicon oxynitride, or the like is formed by a high-density plasma film formation method such as an ECR sputtering method or an ion plating method.

  Next, as shown in FIG. 5B, the organic buffer layer 18 is formed on the electrode protective layer 17. Specifically, the organic buffer layer 18 is formed by screen printing under a reduced pressure atmosphere.

  Next, as shown in FIG. 5C, the gas barrier layer 19 is formed on the organic buffer layer 18. Specifically, it is formed by a high density plasma film forming method such as an ECR sputtering method or an ion plating method. Note that before the formation, it is preferable to improve adhesion by oxygen plasma treatment because reliability is improved. Further, when the gas barrier layer 19 and the electrode protective layer 17 are formed of the same material during manufacturing, the manufacturing process and the manufacturing apparatus can be simplified. In such a case, a common mask can be used as a mask used when forming the gas barrier layer 19 and a mask used when forming the electrode protective layer 17. The gas barrier layer 19 is formed on the element substrate 20A so as to cover the entire surface of the element region 200 and extend to the sealing film covering part 220 of the terminal part 210, and a part of the first wiring 51 is exposed. (See FIG. 4).

  On the other hand, on the sealing substrate 31 side, as shown in FIG. 6A, a material for forming the seal layer 33 is disposed around the sealing substrate 31 on which the color filter layer 32 is formed. Specifically, the material for forming the sealing layer 33 described above is applied around the sealing substrate 31 by a needle dispensing method. Note that this printing method may be a screen printing method. The viscosity at the time of application | coating of the forming material of the sealing layer 33 which concerns on this embodiment is 50 Pa.s (room temperature). The water content is adjusted in advance to 1000 ppm or less.

  Next, as shown in FIG. 6B, the forming material of the filling layer 34 is arranged inside the sealing material 33 forming material disposed on the sealing substrate 31. Coating is performed using a jet dispensing method as an arrangement method. Note that the material for forming the filling layer 34 is not necessarily applied to the entire surface of the sealing substrate 31, and a necessary amount may be divided and applied to a plurality of locations on the sealing substrate 31. The viscosity at the time of application | coating of the forming material of the filling layer 34 which concerns on this embodiment is 500 mPa * s (room temperature). Since the viscosity of the forming material of the sealing layer 33 is sufficiently higher than the viscosity of the forming material of the filling layer 34, the forming material of the sealing layer 33 functions as a bank that prevents the forming material of the filling layer 34 from protruding. Can do.

Next, as shown in FIG. 6C, the sealing substrate 31 coated with the sealing layer 33 and the filling layer 34 is irradiated with ultraviolet rays. For example, each forming material disposed on the sealing substrate 31 is irradiated with ultraviolet rays having an illuminance of 30 mW / cm ² and a light amount of 2000 mJ / cm ² . Then, since the forming material of the seal layer 33 including the photoreactive initiator reacts preferentially and starts curing, the viscosity of the forming material of the seal layer 33 is improved.

  Subsequently, as shown in FIG. 7A, curing of the element substrate 20A on which the gas barrier layer 19 shown in FIG. 5C is formed and the seal layer 33 shown in FIG. 6C is started. The sealed substrate 31 is bonded together. At this time, the element substrate is so formed that the seal layer 33 completely covers the peripheral edge of the organic buffer layer 18 formed on the element substrate 20A and the end of the gas barrier layer 19 on the terminal portion 210 extends. 20A and the sealing substrate 31 are bonded together. This bonding step is performed in a reduced pressure atmosphere with a degree of vacuum of 1 Pa, and is held for 200 seconds at a pressure of 600 N for pressure bonding.

  Next, as shown in FIG. 7B, the organic EL device 1 bonded by pressure bonding is heated in the atmosphere to complete the curing of the forming material of the seal layer 33 and the filling layer 34.

Subsequently, as illustrated in FIG. 3, the second wiring 52 is formed on the gas barrier layer 19 and the first wiring in the terminal portion 210. Specifically, it is formed by photolithography using Al or Cr, for example.
Note that the second wiring 52 may be formed in advance on the element substrate 20A and then bonded to the sealing substrate 31.

According to the organic EL device 1 and the method for manufacturing the same of the above embodiment, the following effects can be obtained.
(1) By forming the second wiring 52 to the vicinity of the seal layer 33, an amount corresponding to the region where the second wiring 52 is formed is used to contact an external input terminal (not shown) and the first wiring 51. The area can be enlarged.
(2) Further, since the second wiring 52 is formed not only on the first wiring 51 but also on the sealing film 53, the wiring contact is made without expanding the formation region of the second wiring 52 to the outer peripheral side of the element substrate 20A. The area can be secured, and so-called narrow frame can be achieved.

(Second Embodiment)
Next, an organic EL device according to a second embodiment will be described with reference to FIG. FIG. 8 is a schematic cross-sectional view showing the structure of the organic EL device in the second embodiment. In addition, the same code | symbol is attached | subjected to the same structure as 1st Embodiment, and detailed description is abbreviate | omitted.
In the first embodiment, the sealing layer 33 and the filling layer 34 are formed on the sealing film 53, and the sealing substrate 31 on which the color filter layer 32 is formed is bonded. However, the organic EL according to the second embodiment is used. As shown in FIG. 8, the device 101 directly forms a color filter layer 132 and a black matrix layer 137 as a light shielding film that partitions the color filter layer 132 for each light emitting element 21 on the sealing film 53. This is a so-called OCCF (On Chip Color Filter) structure.
In the present embodiment, the black matrix layer 137 and the second wiring 52 are formed using the same material. Specifically, it is desirable to be made of a material such as Cr or Al that can play two roles of light shielding and electrical connection. As a result, in addition to the effects (1) and (2) of the first embodiment, the black matrix layer 137 and the second wiring layer 52 can be formed in the same process, thereby reducing the number of manufacturing processes. can do.

(Third embodiment)
Next, an organic EL device according to a third embodiment will be described with reference to FIG. FIG. 9 is an enlarged plan view of a terminal portion of the organic EL device according to the third embodiment. In the organic EL device according to the third embodiment, the planar arrangement of the second wiring in the sealing film covering portion 220 according to the first embodiment is different.
The second wiring 520 in the present embodiment includes a third wiring 530 and a fourth wiring 540 that have different shapes in plan view.
The third wiring 530 is in contact with the first wiring 51 and secures an electrical connection. The wiring conduction portion 530a as the first portion and the wiring widening portion as the second portion on the sealing film covering portion 220 530b and a wiring connection portion 530c between the wiring conduction portion 530a and the wiring widening portion 530b. Similar to the first embodiment, the wiring conduction portion 530a has the same line width as the first wiring 51, and the wiring widening portion 530b has a width approximately three times that of the wiring conduction portion 530a. Further, the wiring connection portion 530c is formed with the same line width as the wiring conduction portion 530a.

The fourth wiring 540 is in contact with the first wiring 51 and secures an electrical connection. The wiring conduction part 540a as the first part and the second wiring 540 located on the element region 200 side on the sealing film covering part 220 are provided. A wiring widening portion 540b as a portion of the wiring, a wiring narrowing portion 540d adjacent to the wiring widening portion 530b of the third wiring 530 on the exposed portion 230 side on the sealing film covering portion 220, a wiring conduction portion 540a, and a wiring It is comprised by the wiring connection part 540c which connects between the narrow parts 540d.
Specifically, the wiring conduction part 540a has the same line width as the first wiring 51, and the wiring widening part 540b is about three times as wide as the wiring conduction part 540a, as in the first embodiment. ing. Further, the wiring connection portion 540c is formed with the same line width as the wiring conduction portion 540a, and the wiring narrow portion 540d is about 1/3 times as wide as the wiring conduction portion 540a.

  By arranging in this way, the terminal width that can be used for the contact can be increased about three times. By increasing the terminal width, electrical contact in the panel state is facilitated, and connection with an external circuit such as mounting of an FPC, for example, can be easily and reliably performed. Further, since the third wiring 530 and the fourth wiring 540 are formed on the sealing film 53, it is not necessary to widen the frame area. This is one means for realizing a narrow frame while expanding the contact area in the current situation where the definition of organic EL devices is increasing.

  The second wiring 520 (the third wiring 530 and the fourth wiring 540) is not particularly limited as long as it is a conductive material, like the second wiring 52 of the first embodiment. It is formed by lithography.

(Electronics)
Next, an example of an electronic apparatus provided with the organic EL device of the above embodiment will be described with reference to FIG.

  FIG. 10A is a perspective view showing an example of a mobile phone. In FIG. 10A, reference numeral 150 denotes a mobile phone body, and reference numeral 151 denotes a display unit including the organic EL device of the above embodiment.

  FIG. 10B is a perspective view illustrating an example of a portable information processing apparatus such as a word processor or a personal computer. In FIG. 10B, reference numeral 160 denotes an information processing apparatus, reference numeral 161 denotes an input unit such as a keyboard, reference numeral 163 denotes an information processing body, and reference numeral 162 denotes a display unit including the organic EL device of the above embodiment.

  FIG. 10C is a perspective view illustrating an example of a wristwatch type electronic device. In FIG. 10C, reference numeral 170 denotes a watch body, and reference numeral 171 denotes an EL display unit including the organic EL device of the above embodiment.

  Since the electronic devices shown in FIGS. 10A to 10C are provided with the organic EL device shown in the above embodiment, the narrow frame is achieved, the outer shape is smaller, and the display characteristics are improved. It becomes a good electronic device.

  In addition, as an electronic device which can apply the organic EL apparatus of the said embodiment, it is not restricted to this, It can apply to a various electronic device. For example, desktop computers, liquid crystal projectors, multimedia personal computers (PCs) and engineering workstations (EWS), pagers, word processors, TVs, viewfinder type or monitor direct view type video tape recorders, electronic notebooks, electronic The present invention can be applied to electronic devices such as a desktop computer, a car navigation device, a POS terminal, and a device having a touch panel.

  DESCRIPTION OF SYMBOLS 1 ... Organic EL apparatus (1st Embodiment) 10 ... Anode as 1st electrode, 11 ... Cathode as 2nd electrode, 12 ... Light emitting layer (organic light emitting layer), 13 ... Pixel partition, 17 ... Electrode Protective layer (protective layer), 18 ... organic buffer layer (protective layer), 19 ... gas barrier layer as sealing film, 20A ... element substrate, 21 ... light emitting element, 31 ... sealing substrate, 32 ... color filter layer (first) 1), 33 ... sealing layer, 34 ... filling layer, 51 ... first wiring, 52 ... second wiring, 53 ... sealing film, 520 ... second wiring, 101 ... organic EL device (second embodiment) 132, a color filter layer (second embodiment), 137, a black matrix layer as a light shielding film (second embodiment), 200, an element region, 210, a terminal portion, 530a, 540a, a first of a second wiring. Wiring conduction part as a part, 530b, 540 ... wiring widened portion of the second portion of the second wiring, 150 ... mobile phone as an electronic apparatus, 160 ... information processing device as an electronic device, 170 ... watch as an electronic apparatus.

Claims (7)

On the board
A light emitting region provided with a light emitting element having a first electrode, a second electrode, and a light emitting layer provided between the first electrode and the second electrode;
A sealing film covering at least the light emitting element;
A first wiring that is electrically connected to the light emitting element and has a covering portion covered with the sealing film and an exposed portion exposed from the sealing film;
A second wiring having a first portion in contact with the first wiring in the exposed portion and a second portion formed on the sealing film;
With
The first portion and the second portion of the second wiring function as terminals that are electrically connected to an external circuit ;
The first wiring is electrically connected to any one of a scanning line driving circuit, a scanning line connected to the scanning line driving circuit, a data line driving circuit, a signal line connected to the data line driving circuit, a power supply line, and a cathode wiring. An electro-optical device which is a lead wiring connected to the . The electro-optical device according to claim 1,
The electro-optical device, wherein the second wiring is configured to increase a wiring contact area with the external circuit. The electro-optical device according to claim 1, wherein
On the sealing film in the light emitting region, a light shielding film that shields at least a part of the light emitted from the light emitting layer is provided,
The electro-optical device, wherein the second wiring and the light shielding film are formed of the same material. The electro-optical device according to any one of claims 1 to 3 ,
The first portion is formed with the same line width as the first wiring,
The electro-optical device, wherein the second portion has a line width larger than that of the first portion in plan view. An electronic apparatus comprising the electro-optical device according to any one of claims 1-4. Forming a light-emitting element having a first electrode, a second electrode, and a light-emitting layer provided between the first electrode and the second electrode on a substrate; ,
A second step of forming a first wiring outside the light emitting element so as to be electrically connected to the light emitting element;
By covering at least part of the entire surface of the light emitting element and the first wiring with a sealing film, a covering portion in which the first wiring is covered with the sealing film, and the first wiring is exposed from the sealing film. A third step of forming an exposed portion;
The first portion so that the first portion in contact with the first wiring in the exposed portion and the second portion formed on the sealing film function as a terminal electrically connected to an external circuit. and Bei example a fourth step of forming a second wiring having a second portion, and
The fourth step includes a step of forming a light shielding film on the sealing film on the light emitting element, and the second wiring is formed using the same material as the light shielding film. Device manufacturing method. The method of manufacturing an electro-optical device according to claim 6 ,
The second wiring has a first portion in contact with the first wiring, and a second portion in contact with the sealing film,
In the fourth step, the first portion is formed with the same line width as the first wiring,
The method of manufacturing an electro-optical device, wherein the second portion is formed to have an area larger than that of the first portion in plan view.

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