JP5012848B2 - Organic electroluminescence device and electronic device - Google Patents

Description

  The present invention relates to an organic electroluminescence device, a manufacturing method thereof, and an electronic apparatus.

  In recent years, with the diversification of information equipment and the like, there is an increasing need for flat display devices that consume less power and are lighter. As one of such flat display devices, an organic electroluminescence device (hereinafter referred to as “organic EL device”) having an organic light emitting layer is known. Such an organic EL device generally has a configuration in which a light emitting layer is provided between an anode and a cathode. Furthermore, in order to improve the hole injection property and the electron injection property, a configuration in which a hole injection layer is disposed between the anode and the light emitting layer and a configuration in which an electron injection layer is disposed between the light emitting layer and the cathode are proposed. ing.

Many of the materials used for the light emitting layer, the hole injection layer, and the electron injection layer of the organic EL device react with moisture in the atmosphere and are easily deteriorated. When these layers deteriorate, a non-light emitting region called a “dark spot” is formed in the organic EL device, and the lifetime of the light emitting element is shortened. Therefore, in such an organic EL device, it is a problem to prevent intrusion of moisture and oxygen.

Therefore, a thin film of silicon nitride, silicon oxide, ceramics, etc. that is transparent and excellent in gas barrier properties on the light emitting element is formed by a high density plasma film forming method (for example, ion plating, ECR plasma sputtering, ECR plasma CVD, surface wave plasma). A technique called thin film sealing is used to form a gas barrier layer by CVD, ICP-CVD, or the like (see, for example, Patent Documents 1 to 4).
Further, when the gas barrier layer is directly formed on the element substrate having a pixel partition wall or the like, a crack or the like is generated due to the uneven shape on the surface. Therefore, cracks are prevented by forming an organic buffer layer on the element substrate and then forming a gas barrier layer.

Japanese Patent Laid-Open No. 2001-284041 JP 2003-17244 A JP 2003-203762 A JP 2005-293946 A

In recent years, in order to cope with downsizing of a display body used for a mobile phone or the like and downsizing of a display body used for a large-sized television or the like, a non-light-emitting portion around a pixel, that is, a so-called “frame portion” is made as narrow as possible There is a request.
In particular, when the width of the frame portion is narrowed as much as possible by the so-called “top emission structure” in which the light emitted from the organic light emitting layer is extracted and displayed through the colored layer from the sealing substrate side disposed opposite to the element substrate, the frame portion In order to prevent leakage of light leaking from the frame, it is necessary to provide a light shielding layer such as a black matrix so that light does not leak to the frame portion, and even a window portion that transmits ultraviolet rays for curing cannot be formed. Many.
Further, at the rising edge of the peripheral edge of the organic buffer layer, the gas barrier layer is not flat and an angle is generated, so that the gas barrier layer is easily damaged.

  The present invention has been made in view of the above-described problems, and provides an organic electroluminescence device capable of reducing a frame portion while preventing damage to a gas barrier layer, a manufacturing method thereof, and an electronic apparatus.

  In order to solve the above-described problems, in the organic EL device of the present invention, an element substrate having a plurality of light-emitting elements in which an organic light-emitting layer is sandwiched between a pair of electrodes, and a sealing disposed so as to face the element substrate In the organic electroluminescence device provided with a substrate and a peripheral sealing layer for fixing the element substrate and the sealing substrate in a peripheral portion between the element substrate and the sealing substrate, the light emitting element is An electrode protection layer to be coated, an organic buffer layer to cover the electrode protection layer, and a gas barrier layer to cover the organic buffer layer are formed, and the gas barrier layer is formed wider than the organic buffer layer. The peripheral seal layer is provided in an upper layer of the gas barrier layer, and a peripheral end portion of the organic buffer layer is disposed within a width of the peripheral seal layer.

According to this organic EL device, since the gas barrier layer covering the periphery of the organic buffer layer is reinforced by the peripheral seal layer, it is possible to prevent damage such as cracks and peeling due to stress concentration in the gas barrier layer. it can.
Further, since the peripheral end portion of the organic buffer layer is disposed within the width of the peripheral seal layer, the frame portion which is a non-light emitting portion can be reduced. Therefore, it is possible to reduce the size of a terminal device such as a mobile phone and to reduce the size of a large-sized TV, etc., and there is an effect of improving the degree of freedom of design.

Since the peripheral seal layer is made of an ultraviolet curable resin, the peripheral seal layer is prevented from tearing at the time of bonding by increasing the viscosity by ultraviolet irradiation before the element substrate and the sealing substrate are bonded to each other. Can do.
Adhesiveness between the element substrate and the sealing substrate is improved by forming an adhesive layer made of a thermosetting resin inside the peripheral sealing layer between the element substrate and the sealing substrate. Can be made. In addition, it is possible to prevent moisture from entering the inside surrounded by the peripheral sealing layer between the element substrate and the sealing substrate. In addition, the sealing substrate on the gas barrier layer is fixed and has a buffering function against mechanical shock from the outside, so that the organic light emitting layer and the gas barrier layer can be protected.

The peripheral sealing layer or the adhesive layer is mixed with spherical particles having a predetermined particle diameter that regulate the distance between the element substrate and the sealing substrate, and the particles are made of an organic material. By regulating the distance from the sealing substrate, light can be extracted efficiently in the case of the top emission structure, and damage to the gas barrier layer can be prevented.
Since the gas barrier layer is made of a silicon compound, transparency, gas barrier properties and water resistance can be ensured.
Since the contact angle at the peripheral edge of the organic buffer layer is 20 ° or less, the rising of the peripheral edge can be suppressed and peeling can be prevented. In addition, the unevenness of the gas barrier layer covering the peripheral edge of the organic buffer layer can be reduced, and damage can be suppressed.

  Further, in the method for manufacturing an organic EL device of the present invention, an element substrate having a plurality of light emitting elements each having an organic light emitting layer sandwiched between a pair of electrodes, and a sealing substrate disposed to face the element substrate. A method for manufacturing an provided organic electroluminescence device, comprising: forming an electrode protective layer covering the light emitting element on the element substrate; and forming an organic buffer layer covering the electrode protective layer; Forming a gas barrier layer that covers the organic buffer layer, applying a forming material for the peripheral seal layer on the sealing substrate, and the organic buffer within the width of the peripheral seal layer A step of bonding the element substrate and the sealing substrate so as to dispose the peripheral edge of the layer.

  According to this method for manufacturing an organic EL device, the gas barrier layer is laminated on the element substrate, and a material for forming the peripheral seal layer is applied onto the sealing substrate, and the element substrate is formed. In order to bond the sealing substrate and the sealing substrate together, the peripheral sealing layer can be formed on the peripheral edge of the organic buffer layer.

  The step of forming a peripheral sealing layer on the sealing substrate includes a step of applying an ultraviolet curable resin, which is a material for forming the peripheral sealing layer, to the periphery of the sealing substrate, and an inner side of the peripheral sealing layer. Applying a thermosetting resin that is a material for forming the agent layer, and before irradiating the peripheral sealing layer with ultraviolet rays before the step of bonding the element substrate and the sealing substrate together. The step of bonding the element substrate and the sealing substrate includes the step of bonding the element substrate and the sealing substrate under reduced pressure while the peripheral sealing layer is cured, and the peripheral sealing layer and the sealing substrate. And a step of heating the adhesive layer to be cured in the air.

Before the element substrate and the sealing substrate are bonded together, the peripheral sealing layer is irradiated with ultraviolet rays and temporarily cured, and after the viscosity of the peripheral sealing layer is increased, the element substrate and the sealing substrate are bonded together. Therefore, since the viscosity is low at the time of application, drawing operation can be performed at a high speed, and the viscosity is increased at the time of bonding, so that it is possible to improve the bonding position accuracy and to prevent the adhesive layer from protruding. Further, even when the width of the peripheral sealing layer on the sealing substrate side is shielded by a black matrix as a light leakage prevention of the frame portion, the peripheral sealing layer is irradiated by irradiating ultraviolet rays before bonding. Curing can proceed.
In addition, since the peripheral seal and the adhesive layer are heated and cured after the element substrate and the sealing substrate are bonded together, it is possible to improve adhesiveness, heat resistance, and moisture resistance while maintaining positional accuracy. Furthermore, since the element substrate and the sealing substrate are bonded together under reduced pressure and cured in the air, the adhesive layer spreads without any gaps inside the peripheral sealing layer, so that bubbles and moisture can be mixed. Can be prevented.

  Further, the electronic apparatus is provided with the organic EL device according to the present invention. According to the present invention, an electronic device including a display unit having high quality image characteristics can be obtained.

It is a schematic diagram which shows the wiring structure of the organic electroluminescent apparatus of this embodiment of this invention. It is a top view which shows typically the structure of the organic electroluminescent apparatus in 1st Embodiment of this invention. It is sectional drawing which shows typically the structure of the organic electroluminescent apparatus in 1st Embodiment of this invention. It is an expanded sectional view of the A section shown in Drawing 3 in a 1st embodiment of the present invention. It is process drawing by the side of the element substrate of the organic EL device in a 1st embodiment of the present invention. It is process drawing by the side of the sealing substrate of the organic electroluminescent apparatus in 1st Embodiment of this invention. It is sectional drawing which shows typically the structure of the organic electroluminescent apparatus in 2nd Embodiment of this invention. It is an expanded sectional view of the B section shown in Drawing 7 in a 2nd embodiment of the present invention. It is a figure which shows the electronic device in embodiment of this invention.

The present invention will be described in detail below.
This embodiment shows a part of the present invention and does not limit the present invention, and can be arbitrarily changed within the scope of the technical idea of the present invention. Moreover, in each figure shown below, in order to make each layer and each member the size which can be recognized on drawing, the scale is varied for each layer and each member.

(First embodiment of organic EL device)
First, a first embodiment of the organic EL device of the present invention will be described.
FIG. 1 is a schematic diagram showing a wiring structure of the organic EL device of the present embodiment. In FIG. 1, reference numeral 1 denotes the organic EL device.

This organic EL device 1 is of an active matrix type using a thin film transistor (hereinafter referred to as TFT) as a switching element, and intersects a plurality of scanning lines 101 at right angles to each scanning line 101. And a plurality of power lines 103 extending in parallel to each signal line 102, and in the vicinity of the intersections of the scanning lines 101 and the signal lines 102. Pixel regions X are formed.
Of course, according to the technical idea of the present invention, an active matrix using TFT or the like is not indispensable. Even if the present invention is implemented using an element substrate for a simple matrix and the simple matrix is driven, the same effect can be obtained at low cost. can get.

  A data line driving circuit 100 including a shift register, a level shifter, a video line, and an analog switch is connected to the signal line 102. Further, a scanning line driving circuit 80 including a shift register and a level shifter is connected to the scanning line 101.

  Further, in each pixel region X, a switching TFT (switching element) 112 to which a scanning signal is supplied to the gate electrode via the scanning line 101 and a pixel shared from the signal line 102 via the switching TFT 112 are provided. A holding capacitor 113 for holding a signal, a driving TFT (switching element) 123 to which a pixel signal held by the holding capacitor 113 is supplied to a gate electrode, and the power supply line 103 through the driving TFT 123 are electrically connected An anode 10 into which a drive current flows from the power supply line 103 when connected, and a light emitting layer (organic light emitting layer) 12 sandwiched between the anode 10 and the cathode 11 are provided.

  According to the organic EL device 1, when the scanning line 101 is driven and the switching TFT 112 is turned on, the potential of the signal line 102 at that time is held in the holding capacitor 113, and according to the state of the holding capacitor 113. The on / off state of the driving TFT 123 is determined. Then, current flows from the power supply line 103 to the anode 10 through the channel of the driving TFT 123, and further current flows to the cathode 11 through the light emitting layer 12. The light emitting layer 12 emits light according to the amount of current flowing through it.

  Next, specific modes of the organic EL device 1 of the present embodiment will be described with reference to FIGS. Here, FIG. 2 is a plan view schematically showing the configuration of the organic EL device 1. FIG. 3 is a cross-sectional view schematically showing the organic EL device 1. FIG. 4 is a diagram showing the main part (A part) of FIG. 3, and is an enlarged cross-sectional view for explaining the configuration of the peripheral part of the organic EL device 1.

First, the configuration of the organic EL device 1 will be described with reference to FIG.
FIG. 2 is a diagram showing a TFT element substrate (hereinafter referred to as “element substrate”) 20 </ b> A that causes the light emitting layer 12 to emit light by the above-described various wirings, TFTs, and various circuits formed on the substrate body 20.
The element substrate 20A of the organic EL device includes an actual display region 4 (inside the two-dot chain line in FIG. 2) in the center portion and a dummy region 5 (between the one-dot chain line and the two-dot chain line) arranged around the actual display region 4. Area).

  One of red (R), green (G), and blue (B) light is extracted from the pixel region X shown in FIG. 1, and the display region RGB shown in FIG. 2 is formed. In the actual display area 4, the display areas RGB are arranged in a matrix. In addition, each of the display areas RGB is arranged in the same color in the vertical direction of the paper, and constitutes a so-called stripe arrangement. The display area RGB is combined into one display unit pixel, and the display unit pixel mixes RGB light emission to perform full color display.

  Scan line drive circuits 80 and 80 are arranged on both sides of the actual display area 4 in FIG. 2 and on the lower layer side of the dummy area 5. Further, an inspection circuit 90 is disposed above the actual display area 4 in FIG. 2 and below the dummy area 5. This inspection circuit 90 is a circuit for inspecting the operating state of the organic EL device 1, and includes, for example, inspection information output means (not shown) for outputting the inspection result to the outside, and the organic EL during production or at the time of shipment. The apparatus 1 is configured to be able to inspect the quality and defects.

(Cross-section structure)
Next, a cross-sectional structure of the organic EL device 1 will be described with reference to FIG.
The organic EL device 1 in the present embodiment is a so-called “top emission structure” organic EL device. Since the top emission structure extracts light not from the element substrate side but from the sealing substrate side, there is an effect that a wide light emitting area can be secured without being affected by the size of various circuits arranged on the element substrate. Therefore, luminance can be secured while suppressing voltage and current, and the lifetime of the light-emitting element can be maintained long.
The organic EL device 1 includes a plurality of light emitting elements 21 having a light emitting layer 12 (organic light emitting layer) sandwiched between an anode 10 and a cathode 11 (a pair of electrodes), and an element substrate 20A having a pixel partition wall 13 separating the light emitting elements 21. And a sealing substrate 31 disposed opposite to the element substrate 20A.

(Element board)
As shown in FIG. 3, in the organic EL device 1, an inorganic insulating layer 14 made of silicon nitride or the like is coated on an element substrate 20A on which the above-described various wirings (for example, TFTs or the like) are formed. Further, a contact hole (not shown) is formed in the inorganic insulating layer 14, and the above-described anode 10 is connected to the driving TFT 123. On the inorganic insulating layer 14, a planarizing layer 16 is formed in which a metal reflector 15 made of an aluminum alloy or the like is housed.
On the planarizing layer 16, the anode 10 and the cathode 11 are formed with the light emitting layer 12 interposed therebetween, and the light emitting element 21 is configured. An insulating pixel partition wall 13 is arranged so as to partition the light emitting element 21.

In the present embodiment, the anode 10 is a metal oxide conductive film such as ITO (Indium Thin Oxide) having a high hole injection layer having a work function of 5 eV or more.
In the present embodiment, because of the top emission structure, the anode 10 does not necessarily need to use a light-transmitting material, and a metal electrode made of aluminum or the like may be used. When this configuration is adopted, the above-described metal reflector 15 need not be provided.

  As a material for forming the cathode 11, since this embodiment has a top emission structure, it needs to be a light-transmitting material, and thus a transparent conductive material is used. As the transparent conductive material, ITO is suitable, but other than this, for example, an indium oxide / zinc oxide based amorphous transparent conductive film (Indium Zinc Oxide: IZO) is used. be able to. In the present embodiment, ITO is used.

For the cathode 11, a material having a large electron injection effect (a work function of 4 eV or less) is preferably used. For example, calcium, magnesium, sodium, lithium metal, or a metal compound thereof. Examples of the metal compound include metal fluorides such as calcium fluoride, metal oxides such as lithium oxide, and organometallic complexes such as acetylacetonato calcium. In addition, these materials alone have high electrical resistance and do not function as electrodes, so patterning a metal layer such as aluminum, gold, silver, or copper to avoid the light emitting part, or transparent metals such as ITO or tin oxide You may use in combination with the laminated body with an oxide conductive layer.
In the present embodiment, a laminate of lithium fluoride, magnesium-silver alloy, and ITO is used by adjusting the film thickness to obtain transparency.

The light emitting layer 12 employs a white light emitting layer that emits white light. The white light emitting layer is formed on the entire surface of the element substrate 20A using a vacuum deposition process. As the white light-emitting material, a styrylamine-based light-emitting material and anthracene-based dopamine (blue), or a styrylamine-based light-emitting material and rubrene-based dopamine (yellow) are used.
A triarylamine (ATP) multimer hole injection layer, a TDP (triphenyldiamine) -based hole transport layer, and an aluminum quinolinol (Alq3) layer (electron transport layer) are formed on the lower layer or the upper layer of the light-emitting layer 12. It is preferable to do.

An electrode protective layer 17 is formed on the element substrate 20A to cover the light emitting element 21 and the pixel partition wall 13.
The electrode protective layer 17 is preferably composed of a silicon compound such as silicon oxynitride in consideration of transparency, adhesion, water resistance, and gas barrier properties. The film thickness of the electrode protective layer 17 is preferably 100 nm or more, and the upper limit of the film thickness is preferably set to 200 nm or less in order to prevent generation of cracks due to stress generated by covering the pixel partition walls 13.
In the present embodiment, the electrode protective layer 17 is formed as a single layer, but may be stacked as a plurality of layers. For example, the electrode protective layer 17 may be composed of a low elastic modulus lower layer and a high water resistance upper layer.

An organic buffer layer 18 is formed on the electrode protective layer 17 and covers the electrode protective layer 17.
The organic buffer layer 18 is disposed so as to fill the uneven portion of the electrode protection layer 17 formed in a concavo-convex shape due to the influence of the shape of the pixel partition wall 13, and the upper surface thereof is formed substantially flat. The organic buffer layer 18 has a function of relieving stress generated by warping or volume expansion of the element substrate 20A and preventing the electrode protective layer 17 from peeling from the pixel partition wall 13 having an unstable shape. In addition, since the upper surface of the organic buffer layer 18 is substantially flattened, a gas barrier layer 19 (to be described later) made of a hard film formed on the organic buffer layer 18 is also flattened. Therefore, there is no portion where stress is concentrated, thereby preventing generation of cracks in the gas barrier layer 19.

  Since the organic buffer layer 18 is formed by a screen printing method under a reduced pressure atmosphere as a raw material main component before curing, all of the organic buffer layer 18 having excellent fluidity and having no solvent or volatile component is a raw material of a polymer skeleton. It is necessary to be an organic compound material, and an epoxy monomer / oligomer having an epoxy group and a molecular weight of 3000 or less is preferably used (monomer definition: molecular weight 1000 or less, oligomer definition: molecular weight 1000 to 3000). For example, bisphenol A type epoxy oligomer, bisphenol F type epoxy oligomer, phenol novolac type epoxy oligomer, polyethylene glycol diglycidyl ether, alkyl glycidyl ether, 3,4-epoxycyclohexenylmethyl-3 ′, 4′-epoxycyclohexene carboxylate, There are ε-caprolactone-modified 3,4-epoxycyclohexylmethyl 3 ′, 4′-epoxycyclohexanecarbochelate, and these are used alone or in combination.

Moreover, as the curing agent that reacts with the epoxy monomer / oligomer, one that forms a cured film with excellent electrical insulation and adhesiveness, high hardness, toughness, and excellent heat resistance, excellent transparency, and curing properties. An addition polymerization type with little variation is preferable. For example, 3-methyl-1,2,3,6-tetrahydrophthalic anhydride, methyl-3,6-endomethylene-1,2,3,6-tetrahydrophthalic anhydride, 1,2,4,5-benzene Acid anhydride curing agents such as tetracarboxylic dianhydride and 3,3 ′, 4,4′-benzophenonetetracarboxylic dianhydride are preferred. Furthermore, low-temperature curing is facilitated by adding trace amounts of amine compounds such as alcohols and aminophenols that have a high molecular weight and are difficult to volatilize such as 1,6-hexanediol as reaction accelerators that promote the reaction (ring opening) of acid anhydrides. Become. These curings are performed by heating in the range of 60 to 100 ° C., and the cured film becomes a polymer having an ester bond.
In addition, a cation-releasing photopolymerization initiator often used to shorten the curing time may be used, but it is preferable that the reaction is slow so that the curing shrinkage does not rapidly progress, and the viscosity decreases due to heating after coating. It is preferable to finally form a cured product using thermosetting so as to promote flattening.

  Furthermore, additives such as a silane coupling agent that improves the adhesion to the electrode protective layer 17 and the gas barrier layer 19, a water capturing agent such as an isocyanate compound, and fine particles that prevent shrinkage during curing may be mixed. In addition, since the printing is performed under a reduced pressure atmosphere, the water content is adjusted to 100 ppm or less in order to make it difficult for bubbles to occur when applied.

  The viscosity of each raw material is preferably 1000 mPa · s (room temperature: 25 ° C.) or more. This is because it does not penetrate into the light emitting layer 12 immediately after the application and does not generate a non-light emitting region called a dark spot. Moreover, as a viscosity of the buffer layer forming material which mixed these raw materials, 500-20000 mPa * s, especially 2000-10000 mPa * s (room temperature) are preferable.

Moreover, as an optimal film thickness of the organic buffer layer 18, 3-10 micrometers is preferable. When the organic buffer layer 18 is thicker, foreign matter is mixed in to prevent defects in the gas barrier layer 19. However, if the combined thickness of the organic buffer layer 18 exceeds 10 μm, the coloring layer 37 and the light emitting layer 12 described later As the distance increases and more light escapes to the side, the light extraction efficiency decreases.
Moreover, as a characteristic after hardening, it is preferable that the elastic modulus of the organic buffer layer 18 is 1 to 10 GPa. If it is 10 GPa or more, the stress at the time of planarizing the pixel partition wall 13 cannot be absorbed, and if it is 1 GPa or less, wear resistance, heat resistance and the like are insufficient.

On the organic buffer layer 18, a gas barrier layer 19 is formed in a wide range so as to cover the organic buffer layer 18 and cover the terminal portion of the electrode protective layer 17.
The gas barrier layer 19 is for preventing oxygen and moisture from entering, and thereby, deterioration of the light emitting element 21 due to oxygen and moisture can be suppressed. In consideration of transparency, gas barrier properties, and water resistance, the gas barrier layer 19 is preferably formed of a silicon compound containing nitrogen, that is, silicon nitride, silicon oxynitride, or the like.

  The elastic modulus of the gas barrier layer 19 is preferably 100 GPa or more, specifically about 200 to 250 GPa. The film thickness of the gas barrier layer 19 is preferably about 200 to 600 nm. This is because if it is less than 200 nm, the coverage with respect to foreign matter is insufficient and a through-hole is partially formed, and the gas barrier property may be impaired. If it exceeds 600 nm, a crack due to stress occurs. Because there is a fear.

Further, the gas barrier layer 19 may have a laminated structure, or may have a configuration in which the composition is not uniform, and particularly, the oxygen concentration changes continuously or discontinuously. In addition, as for the film thickness at the time of setting it as a laminated structure, 200-400 nm is preferable as a 1st gas barrier layer, and if it is less than 200 nm, the surface and side surface coating | cover of the organic buffer layer 18 will run short. As a 2nd gas barrier layer which improves the coating | covering property, such as a foreign material, 200-800 nm is preferable. When the total thickness exceeds 1000 nm, the occurrence frequency of cracks is increased, and this is not preferable from the economical viewpoint.
Further, in the present embodiment, since the organic EL device 1 has a top emission structure, the gas barrier layer 19 needs to have light transmittance. Therefore, by appropriately adjusting the material and the film thickness, the present embodiment Then, the light transmittance in the visible light region is set to 80% or more, for example.

(Sealing substrate)
Further, a sealing substrate 31 is disposed opposite to the element substrate 20A on which the gas barrier layer 19 is formed.
Since the sealing substrate 31 has a display surface for extracting emitted light, the sealing substrate 31 is made of a light transmissive material such as glass or transparent plastic (polyethylene terephthalate, acrylic resin, polycarbonate, polyolefin, or the like).

On the lower surface of the sealing substrate 31, a red colored layer 37R, a green colored layer 37G, and a blue colored layer 37B are arranged in a matrix as the colored layer 37. A black matrix layer 32 is formed around the coloring layer 37.
Further, each of the colored layers 37 is disposed so as to face the white light emitting layer 12 formed on the anode 10. Thereby, the emitted light of the light emitting layer 12 is transmitted through each of the colored layers 37 and emitted to the observer side as each color light of red light, green light and blue light. Further, the black matrix may be covered within the width of the peripheral seal layer 33 so that light from the frame portion does not leak.
As described above, in the organic EL device 1, the light emitted from the light emitting layer 12 is used and color display is performed by the colored layers 37 of a plurality of colors.
In addition to the colored layer 37, the sealing substrate 31 may be provided with a functional layer such as an ultraviolet blocking / absorbing layer, an antireflection film, or a heat dissipation layer.

In addition, a peripheral seal layer 33 is provided in the peripheral portion between the element substrate 20 </ b> A and the sealing substrate 31.
The peripheral sealing layer 33 has a bank function that improves the positional accuracy of the bonding between the element substrate 20A and the sealing substrate 31 and prevents the filling layer 34 (adhesive layer) that will be described later from protruding, and is cured by ultraviolet rays. It is made of an epoxy material whose viscosity is improved. Preferably, an epoxy monomer / oligomer having an epoxy group and a molecular weight of 3000 or less is used (monomer definition: molecular weight 1000 or less, oligomer definition: molecular weight 1000 to 3000). For example, bisphenol A type epoxy oligomer, bisphenol F type epoxy oligomer, phenol novolac type epoxy oligomer, polyethylene glycol diglycidyl ether, alkyl glycidyl ether, 3,4-epoxycyclohexenylmethyl-3 ′, 4′-epoxycyclohexene carboxylate, There are ε-caprolactone-modified 3,4-epoxycyclohexylmethyl 3 ′, 4′-epoxycyclohexanecarbochelate, and these are used alone or in combination.

  Moreover, as a curing agent that reacts with an epoxy monomer / oligomer, a photoreactive type that causes a cationic polymerization reaction such as diazonium salt, diphenyliodonium salt, trifellsulfonium salt, sulfonate ester, iron arene complex, silanol / aluminum complex, etc. Initiators are preferred. In addition, when a material whose viscosity gradually increases after ultraviolet irradiation is used, the peripheral seal layer 33 can be prevented from tearing even with a narrow seal width of 1 mm or less, and the filler can be prevented from sticking out after bonding. Further, in order to make it difficult for bubbles to be generated when the pressure is reduced during bonding, it is preferable that the water content is a material adjusted to 1000 ppm or less.

  The film thickness of the peripheral seal layer 33 is preferably 10 to 25 μm. In addition, in order to regulate the distance between the element substrate 20A and the sealing substrate 31, a mixture of spherical particles made of an organic material having a predetermined particle diameter is preferable. As the sealing agent, the viscosity is generally increased by mixing particles of inorganic material in the form of flakes or lumps. However, since the gas barrier layer 19 described above is damaged during bonding and bonding, the organic EL according to this embodiment is used. In the device 1, spherical particles of an organic material having a low elastic modulus are mixed in the peripheral sealing layer 33.

A filling layer 34 (adhesive layer) made of a thermosetting resin is formed inside the element substrate 20 </ b> A and the sealing substrate 31 and surrounded by the peripheral seal layer 33.
The filling layer 34 is filled without gaps in the organic EL device 1 surrounded by the peripheral sealing layer 33 described above, and fixes the sealing substrate 31 disposed to face the element substrate 20A, and from the outside. It has a buffer function against mechanical impact and protects the light emitting layer 12 and the gas barrier layer 19.

  The packed layer 34 must be an organic compound material that is excellent in fluidity and does not have a volatile component such as a solvent as a raw material main component before curing, and preferably an epoxy monomer having an epoxy group and a molecular weight of 3000 or less. / Oligomer is used (monomer definition: molecular weight 1000 or less, oligomer definition: molecular weight 1000-3000). For example, bisphenol A type epoxy oligomer, bisphenol F type epoxy oligomer, phenol novolac type epoxy oligomer, polyethylene glycol diglycidyl ether, alkyl glycidyl ether, 3,4-epoxycyclohexenylmethyl-3 ′, 4′-epoxycyclohexene carboxylate, There are ε-caprolactone-modified 3,4-epoxycyclohexylmethyl 3 ′, 4′-epoxycyclohexanecarbochelate, and these are used alone or in combination.

  Further, as the curing agent that reacts with the epoxy monomer / oligomer, an addition polymerization type that is excellent in electrical insulation, forms a cured film that is tough and excellent in heat resistance, has excellent transparency, and has little variation in curing. Is good. For example, 3-methyl-1,2,3,6-tetrahydrophthalic anhydride, methyl-3,6-endomethylene-1,2,3,6-tetrahydrophthalic anhydride, 1,2,4,5-benzene An acid anhydride curing agent such as tetracarboxylic dianhydride, 3,3 ′, 4,4′-benzophenone tetracarboxylic dianhydride, or a polymer thereof is preferable. These curings are performed in the range of 60 to 100 ° C., and the cured film becomes a polymer having an ester bond that is excellent in adhesion to silicon oxynitride. Furthermore, curing at a low temperature and in a short time is possible by adding a relatively high molecular weight material such as an aromatic amine, alcohol, aminophenol or the like as a curing accelerator that promotes ring opening of acid anhydride.

  The viscosity at the time of application is preferably 100 to 1000 mPa · s (room temperature). The reason is that the material filling property into the space after the bonding is taken into consideration, and a material in which the curing starts after the viscosity once decreases immediately after heating is preferable. Further, in order to make it difficult for bubbles to be generated when the pressure is reduced at the time of bonding, it is preferable that the water content is a material adjusted to 100 ppm or less.

  The film thickness of the filling layer 34 is preferably 5 to 20 μm. In addition, in order to regulate the distance between the element substrate 20A and the sealing substrate 31, a mixture of spherical particles made of an organic material having a predetermined particle diameter is preferable. Similarly to the peripheral sealing layer 33 described above, the organic EL device 1 according to the present embodiment is mixed with particles of an organic material having a low elastic modulus. By mixing the particles with an organic material having a low elastic modulus in the filling layer 34, the above-described damage to the gas barrier layer 19 can be prevented.

(Cross sectional structure of the periphery)
Next, a cross-sectional structure of the peripheral portion of the organic EL device 1 will be described with reference to FIG.
As shown in FIG. 4, the periphery of the organic EL device 1 includes an electrode protective layer 17, an organic buffer layer 18, a gas barrier layer 19, and a peripheral seal layer 33 between the element substrate 20A and the sealing substrate 31 described above. It becomes the structure laminated | stacked one by one.
The thickness of the organic buffer layer 18 decreases from the central portion to the peripheral end portion 35. The elevation angle (contact angle) α with respect to the horizontal direction of the element substrate 20A at the peripheral end portion 35 of the organic buffer layer 18 is preferably 20 ° or less, particularly preferably around 10 °. Thereby, damages such as cracks and peeling due to stress concentration of the gas barrier layer 19 covering the organic buffer layer 18 can be prevented.

  Here, the gas barrier layer 19 is formed wider than the organic buffer layer 19 so as to completely cover the organic buffer layer 18, and the peripheral seal layer 33 is disposed on the gas barrier layer 19. Further, the rising portion 36 of the peripheral end portion 35 of the organic buffer layer 18 is formed within the width d of the peripheral seal layer 33. Thus, since the gas barrier layer 19 covering the peripheral edge 35 of the organic buffer layer 18 is protected by the peripheral seal layer 33, damage such as cracks and peeling due to stress concentration of the gas barrier layer 19 can be prevented. Along with this, moisture can be prevented from passing through the gas barrier layer 19 and reaching the light emitting element 21, and generation of dark spots can be prevented.

  In addition, although the gas barrier layer 19 in this embodiment is formed wider than the outer periphery of the peripheral seal layer 33, it does not necessarily need to be formed wider than the peripheral seal layer 33. That is, the peripheral edge 38 of the gas barrier layer 19 only needs to be formed wider than the peripheral edge 35 of the organic buffer layer 19, and the width d of the peripheral seal layer 33 is the same as the peripheral edge 35 of the organic buffer layer 19. It may be formed inside. Further, the width of the electrode protection layer 17 is wider than that of the organic buffer layer 18 and is usually formed using the same mask material as that of the gas barrier layer 19.

  The peripheral portion of the organic EL device 1 is a frame portion (non-light emitting portion) D. The frame portion D is a non-light-emitting portion of the organic EL device 1, and is, for example, the width from the pixel partition wall 13 provided at the endmost portion on the element substrate 20A to the end portion of the element substrate 20A. The frame portion D is formed with 2 mm, for example, and the width d of the peripheral seal layer is formed with 1 mm, for example.

  According to the above-described embodiment, since the peripheral seal layer 33 is disposed on the gas barrier layer 19, the organic EL device 1 having a narrow frame portion D is obtained as compared with the case where the peripheral seal layer 33 is disposed outside the gas barrier layer 19. In addition, the organic EL device 1 having excellent heat resistance and moisture resistance can be formed. Further, since the bonding area between the element substrate 20A side and the sealing substrate 31 side is larger than that of the conventional can sealing structure, the width d of the peripheral sealing layer 33 is made narrow while maintaining the strength of the organic EL device 1. can do. Therefore, the frame part D which is a non-light-emitting part can be reduced. Accordingly, it is possible to reduce the size of a terminal device such as a mobile phone and the size of a display body such as a large-sized TV, which has the effect of improving the degree of design freedom. In addition, the number of panels that can be taken from one mother substrate can be increased, and the material efficiency is improved.

In addition, in order to prevent the seal from being cut, a general sealant material is mixed with inorganic material particles to increase the viscosity. However, the peripheral seal layer 33 is made of a material that gradually increases in viscosity after irradiation with ultraviolet rays. Thus, the viscosity can be increased before the element substrate 20A side and the sealing substrate 31 side are bonded together by ultraviolet irradiation. For this reason, it is possible to prevent the seal from being cut after the pressure reduction bonding while maintaining a high drawing speed by a dispenser or the like.
Furthermore, by forming a filling layer 34 made of a thermosetting resin inside the element substrate 20A and the sealing substrate 31 and surrounded by the peripheral sealing layer 33, each functional layer below the gas barrier layer 19 due to curing shrinkage. The adhesiveness between the element substrate 20A side and the sealing substrate 31 side is improved while suppressing the influence on the substrate. Therefore, it is possible to prevent moisture from entering the inside surrounded by the peripheral seal layer 33 between the element substrate 20 </ b> A and the sealing substrate 31. In addition, the sealing substrate 31 is fixed and has a buffering function against mechanical shock from the outside, so that the light emitting layer 12 and the gas barrier layer 19 can be protected.
Further, since spherical particles having a predetermined particle size of organic material are mixed in the peripheral sealing layer 33 and the filling layer 34, the gas barrier layer 19 can be prevented from being damaged and the distance between the element substrate 20A and the sealing substrate 31 can be regulated. . Therefore, the optical path length from the light emitting layer 12 to the colored layer 37 can be made short and constant. Thereby, in the case of the top emission structure, the light emitted from the light emitting layer 12 can be efficiently extracted outside the sealing substrate 31 without being incident on the black matrix layer 32. Therefore, the brightness of the organic EL device 1 can be improved.

Moreover, since the gas barrier layer 19 consists of a silicon compound, transparency, gas barrier property, and water resistance can be ensured.
Since the contact angle α at the peripheral end portion 35 of the organic buffer layer 18 is formed to be 20 ° or less, the rising of the peripheral end portion 35 can be suppressed and peeling can be prevented. In addition, it is possible to reduce the unevenness of the gas barrier layer 19 that covers the peripheral edge portion 35 of the organic buffer layer 18, and damage can be suppressed.

(Method for manufacturing organic EL device)
Next, a method for manufacturing the organic EL device 1 according to the present embodiment will be described with reference to FIGS. Here, FIG. 5 is a process diagram on the element substrate 20A side of the organic EL device 1, and FIG. 6 is a process diagram on the sealing substrate 31 side.

First, as shown in FIG. 5A, the electrode protective layer 17 is formed on the element substrate 20A on which the cathode 11 is laminated.
Specifically, for example, a silicon compound containing nitrogen, that is, silicon nitride, silicon oxynitride, or the like is formed by a high-density plasma film forming method such as an ECR sputtering method or an ion plating method.
In addition, you may laminate | stack inorganic oxides, such as SiO2, as a transparent inorganic material, and alkali halides, such as LiF and MgF, by the vacuum evaporation method or the high-density plasma film-forming method.

Next, as shown in FIG. 5B, the organic buffer layer 18 is formed on the electrode protective layer 17.
Specifically, the organic buffer layer 18 that has been screen-printed in a reduced-pressure atmosphere is cured by heating in the range of 60 to 100 ° C. As a problem at this point, the viscosity temporarily decreases until the reaction is started immediately after heating. At this time, the material for forming the organic buffer layer 18 passes through the electrode protective layer 17 and the cathode 11 and permeates the light emitting layer 12 such as Alp3, thereby generating a dark spot. Therefore, it is preferable to leave the film at a low temperature until the curing proceeds to some extent, and to raise the temperature to a certain degree when the viscosity is increased to a certain degree to complete curing.

Next, as shown in FIG. 5C, the gas barrier layer 19 is formed on the organic buffer layer 18.
Specifically, it is formed by a high density plasma film forming method such as an ECR sputtering method or an ion plating method. In addition, reliability is improved by improving the adhesion by oxygen plasma treatment before the formation.

On the other hand, as shown in FIG. 6A, a peripheral sealing layer 33 is formed on the periphery of the sealing substrate 31 on which the colored layer 37 and the black matrix layer 32 are formed.
Specifically, the above-described ultraviolet curable resin material is applied around the sealing substrate 31 by the needle dispensing method.
Note that this printing method may be a screen printing method.

Next, as shown in FIG. 6B, a filling layer 34 is formed inside the sealing substrate 31 surrounded by the peripheral sealing layer 33.
Specifically, the thermosetting resin material described above is applied by a jet dispensing method.
The thermosetting resin material is not necessarily applied to the entire surface of the sealing substrate 31 and may be applied to a plurality of locations on the sealing substrate 31.

Next, as shown in FIG. 6C, the sealing substrate 31 coated with the peripheral sealing layer 33 and the filling layer 34 is irradiated with ultraviolet rays.
Specifically, for the purpose of pre-curing the peripheral seal layer 33, for example, the sealing substrate 31 is irradiated with ultraviolet rays having an illuminance of 30 MW / cm 2 and a light amount of 2000 MJ / cm 2. At this time, only the peripheral sealing layer 33, which is an ultraviolet curable resin, is cured and the viscosity is improved.

Next, the element substrate 20A side on which the gas barrier layer 19 is formed as shown in FIG. 5C and the sealing substrate 31 on which the peripheral seal layer 22 is temporarily cured shown in FIG. 6C are bonded together. . At this time, the peripheral sealing layer 33 is disposed so as to completely cover the rising portion 36 of the peripheral end portion 35 of the organic buffer layer 18 formed on the element substrate 20A.
Specifically, this bonding step is performed in a vacuum atmosphere with a degree of vacuum of, for example, 1 Pa, and held for 200 seconds at a pressure of 600 N for pressure bonding.

Next, the organic EL device 1 bonded by pressure bonding is heated in the atmosphere.
Specifically, by heating in the atmosphere with the element substrate 20A side and the sealing substrate 31 side bonded together, the above-described temporarily cured peripheral sealing layer 33 and the filling layer 34 are thermally cured. Even if a vacuum space exists between the element substrate 20A and the sealing substrate 31, the space is filled with the filling layer 34 by performing heat curing in the atmosphere. From the above, the desired organic EL device 1 in the present embodiment described above can be obtained.

  Therefore, according to the above-described manufacturing method, before the element substrate 20A and the sealing substrate 31 are bonded, the peripheral seal layer 33 is irradiated with ultraviolet rays to be temporarily cured, and after the viscosity of the peripheral seal layer 33 is increased, the element substrate 30A. And the sealing substrate 31 are bonded together. Therefore, since the viscosity is low at the time of application, drawing operation can be performed at a high speed, and the viscosity increases at the time of bonding, so that the bonding position accuracy can be improved and the filling layer 34 can be prevented from protruding. Further, the peripheral seal layer 33 can be formed on the rising portion 36 of the peripheral end portion 35 of the organic buffer layer 18. Furthermore, even when the width of the peripheral seal layer 33 on the sealing substrate 31 side is shielded by the black matrix layer 32 as a light leakage prevention of the frame portion D, the peripheral seal is obtained by irradiating ultraviolet rays before bonding. Curing of the layer 33 can proceed.

  Further, since the peripheral seal 33 and the filling layer 34 are heated and cured after the element substrate 20A and the sealing substrate 31 are bonded to each other, the adhesiveness, heat resistance, and moisture resistance can be improved while maintaining the positional accuracy. Furthermore, since the element substrate 20A and the sealing substrate 31 are bonded together under reduced pressure and cured in the air, the filling layer 34 is surrounded by the peripheral seal layer 33 due to the pressure difference between the vacuum atmosphere and the air. Since it spreads without a gap, it is possible to prevent air bubbles and moisture from entering.

(Second Embodiment of Organic EL Device)
Next, the organic EL device 2 in the second embodiment of the present invention will be described. In the present embodiment, the same components as those in the first embodiment are denoted by the same reference numerals and description thereof is omitted. Here, FIG. 7 is a cross-sectional view schematically showing the organic EL device 2. FIG. 8 is a diagram showing the main part (B part) of FIG. 7, and is a cross-sectional view for explaining the configuration of the peripheral part of the organic EL device 2.

The organic EL device 1 according to the first embodiment described above has a top emission structure, and has a configuration in which a white light emitting layer is used for the light emitting layer 12 and a colored layer 37 and a black matrix layer 32 are provided on the sealing substrate 31.
The organic EL device 2 according to the second embodiment of the present invention has a so-called “bottom emission structure”, and is different in that a red light emitting layer 12R, a green light emitting layer 12G, and a blue light emitting layer 12B are used for the light emitting layer 12. ing.

  As shown in FIG. 7, the organic EL device 2 includes an element substrate 20A on which various wirings (for example, TFTs) described above are formed and covered with an inorganic insulating layer 14 made of silicon nitride or the like. The light emitting layer 12 is sandwiched between a pair of electrodes of the anode 10 and the cathode 11 on the element substrate 20A. The light emitting layer 12 is partitioned by a pixel partition wall 13 formed on the inorganic insulating layer 14, and the light emitting layers 12 of a red light emitting layer 12R, a green light emitting layer 12G, and a blue light emitting layer 12B are arranged.

As a material for forming the light emitting layer 12 in the present embodiment, a known light emitting material capable of emitting fluorescence or phosphorescence is used. Further, by providing the red light emitting layer 12R, the green light emitting layer 12G, and the blue light emitting layer 12B for each of the plurality of anodes 10, full color display is possible.
Specifically, the material for forming the light emitting layer 12 includes (poly) fluorene derivative (PF), (poly) paraphenylene vinylene derivative (PPV), polyphenylene derivative (PP), polyparaphenylene derivative (PPP) as polymer materials. Polysilanes such as polyvinylcarbazole (PVK), polythiophene derivatives, and polymethylphenylsilane (PMPS) are preferably used. In addition, these polymer materials include polymer materials such as perylene dyes, coumarin dyes, rhodamine dyes, rubrene, perylene, 9,10-diphenylanthracene, tetraphenylbutadiene, Nile red, coumarin 6, and quinacridone. It can also be used by doping a low molecular weight material such as. As a low molecular weight material, a host material such as Alq3 or DPVBi, doped with Nile Red, DCM, rubrene, perylene, rhodamine, or the like, or a host alone can be used in a vapor deposition method.
Further, as a material for forming the red light emitting layer 12R, for example, MEHPPV (poly (3-methoxy6- (3-ethylhexyl) paraphenylenevinylene) is used, and as a material for forming the green light emitting layer 12G, for example, polydioctylfluorene and F8BT ( A mixed solution of dioctylfluorene and benzothiadiazole) may be used, for example, as polydioctylfluorene as a material for forming the blue light emitting layer 12B. There is no limitation on the thickness, and a preferable film thickness is adjusted for each color.

  The configuration of the upper layer portion from the light emitting layer 12 is the same as that of the first embodiment, but since the bottom emission structure is used in this embodiment, the emitted light is extracted from the element substrate 20A side. Therefore, the upper layer portion does not necessarily need to be a light transmissive material.

(Cross sectional structure of the periphery)
Next, a cross-sectional structure of the periphery of the organic EL device 2 will be described with reference to FIG.
As shown in FIG. 8, the thickness of the organic buffer layer 18 in the peripheral portion of the organic EL device 2 decreases from the central portion to the peripheral end portion 35 as in the first embodiment. The elevation angle (contact angle) α with respect to the horizontal direction of the element substrate 20A at the peripheral end portion 35 of the organic buffer layer 18 is preferably 20 ° or less, particularly preferably around 10 °. Thereby, damages such as cracks and peeling due to stress concentration of the gas barrier layer 19 covering the organic buffer layer 18 can be prevented.

  Here, the gas barrier layer 19 is formed wider than the organic buffer layer 19 so as to completely cover the organic buffer layer 18, and the peripheral seal layer 33 is disposed on the gas barrier layer 19. Further, the rising portion 36 of the peripheral end portion 35 of the organic buffer layer 18 is formed within the width d of the peripheral seal layer 33. Thus, since the gas barrier layer 19 covering the peripheral edge 35 of the organic buffer layer 18 is protected by the peripheral seal layer 33, damage such as cracks and peeling due to stress concentration of the gas barrier layer 19 can be prevented. Along with this, moisture can be prevented from passing through the gas barrier layer 19 and reaching the light emitting element 21, and generation of dark spots can be prevented.

  In addition, although the gas barrier layer 19 in this embodiment is formed wider than the outer periphery of the peripheral seal layer 33, it does not necessarily need to be formed wider than the peripheral seal layer 33. That is, the peripheral edge 38 of the gas barrier layer 19 only needs to be formed wider than the peripheral edge 35 of the organic buffer layer 19, and the width d of the peripheral seal layer 33 is the same as the peripheral edge 35 of the organic buffer layer 19. It may be formed inside. Further, the width of the electrode protection layer 17 is wider than that of the organic buffer layer 18 and is usually formed using the same mask material as that of the gas barrier layer 19.

  The peripheral portion of the organic EL device 1 is a frame portion (non-light emitting portion) D. The frame portion D is a non-light-emitting portion of the organic EL device 1, and is, for example, the width from the pixel partition wall 13 provided at the endmost portion on the element substrate 20A to the end portion of the element substrate 20A. The frame portion D is formed with 2 mm, for example, and the width d of the peripheral seal layer is formed with 1 mm, for example.

  Also in the second embodiment described above, since the peripheral seal layer 33 is disposed on the gas barrier layer 19 as in the first embodiment, the frame portion is compared with the case where the peripheral seal layer 33 is disposed outside the gas barrier layer 19. An organic EL device 1 having a narrow D can be obtained, and an organic EL device 1 having excellent heat resistance and moisture resistance can be formed. Further, since the bonding area between the element substrate 20A side and the sealing substrate 31 side is larger than that of the conventional can sealing structure, the width d of the peripheral sealing layer 33 is made narrow while maintaining the strength of the organic EL device 1. can do. Therefore, the frame part D which is a non-light-emitting part can be reduced. Accordingly, it is possible to reduce the size of a terminal device such as a mobile phone and the size of a display body such as a large-sized TV, which has the effect of improving the degree of design freedom. In addition, the number of panels that can be taken from one mother substrate can be increased, and the material efficiency is improved.

In addition, in order to prevent the seal from being cut, a general sealant material is mixed with inorganic material particles to increase the viscosity. However, the peripheral seal layer 33 is made of a material that gradually increases in viscosity after irradiation with ultraviolet rays. Thus, the viscosity can be increased before the element substrate 20A side and the sealing substrate 31 side are bonded together by ultraviolet irradiation. For this reason, it is possible to prevent the seal from being cut after being stuck under reduced pressure while maintaining a high drawing speed by a dispenser or the like.
Furthermore, by forming a filling layer 34 made of a thermosetting resin inside the element substrate 20A and the sealing substrate 31 and surrounded by the peripheral sealing layer 33, each functional layer below the gas barrier layer 19 due to curing shrinkage. The adhesiveness between the element substrate 20A side and the sealing substrate 31 side is improved while suppressing the influence on the substrate. Therefore, it is possible to prevent moisture from entering the inside surrounded by the peripheral seal layer 33 between the element substrate 20 </ b> A and the sealing substrate 31. In addition, the sealing substrate 31 is fixed and has a buffering function against mechanical shock from the outside, so that the light emitting layer 12 and the gas barrier layer 19 can be protected.

Moreover, since the gas barrier layer 19 consists of a silicon compound, transparency, gas barrier property, and water resistance can be ensured.
Since the contact angle α at the peripheral end portion 35 of the organic buffer layer 18 is formed to be 20 ° or less, the rising of the peripheral end portion 35 can be suppressed and peeling can be prevented. In addition, it is possible to reduce the unevenness of the gas barrier layer 19 that covers the peripheral edge portion 35 of the organic buffer layer 18, and damage can be suppressed.
As described above, the present invention is effective regardless of the top emission structure or the bottom emission structure.

(Electronics)
Next, an example of an electronic apparatus including the organic EL device according to the embodiment will be described.
FIG. 9A is a perspective view showing an example of a mobile phone. In FIG. 9A, reference numeral 50 denotes a mobile phone body, and reference numeral 51 denotes a display unit including an organic EL device.
FIG. 9B is a perspective view illustrating an example of a portable information processing apparatus such as a word processor or a personal computer. In FIG. 9B, reference numeral 60 denotes an information processing device, reference numeral 61 denotes an input unit such as a keyboard, reference numeral 63 denotes an information processing body, and reference numeral 62 denotes a display unit including an organic EL device.
FIG. 9C is a perspective view showing an example of a wristwatch type electronic device. In FIG. 9C, reference numeral 70 indicates a watch body, and reference numeral 71 indicates an EL display unit including an organic EL device.
Since the electronic devices shown in FIGS. 9A to 9C are provided with the organic EL device described in the previous embodiment, the electronic devices have good display characteristics.

  The electronic device is not limited to the electronic device, and can be applied to various electronic devices. For example, a desktop computer, a liquid crystal projector, a multimedia personal computer (PC) and an engineering workstation (EWS), a pager, a word processor, a television, a viewfinder type or a monitor direct view type video tape recorder, an electronic notebook, an electronic The present invention can be applied to electronic devices such as a desktop computer, a car navigation device, a POS terminal, and a device having a touch panel.

DESCRIPTION OF SYMBOLS 1 ... Organic EL apparatus 2 ... Organic EL apparatus 10 ... Anode (a pair of electrodes) 11 ... Cathode (a pair of electrodes) 12 ... Light emitting layer (organic light emitting layer) 13 ... Pixel partition 14 ... Inorganic insulating layer (insulating layer) 17 ... Electrode protective layer (first inorganic film) 18 ... Organic buffer layer (organic film) 19 ... Gas barrier layer (second inorganic film) 20A ... Element substrate (first substrate) 21 ... Light emitting element 31 ... Sealing substrate ( Second substrate) 33 ... peripheral sealing layer 34 ... filling layer (adhesive layer) 35 ... peripheral edge 123 ... driving TFT ( transistor )

Claims (10)

A first substrate and a second substrate provided so as to face the first substrate are bonded together by a peripheral sealing layer provided between the first substrate and the second substrate. An organic electroluminescent device, comprising:
The first substrate is
A transistor,
An insulating layer provided on the transistor;
A light-emitting element provided on the insulating layer and having a light-emitting layer between the first electrode and the second electrode;
A first inorganic film provided to cover the light emitting element;
An organic film provided to cover the first inorganic film;
A second inorganic film provided so as to cover the organic film,
The peripheral seal layer is provided outside the light emitting element,
The insulating layer is provided so as to extend to the outside of the peripheral sealing layer,
The end of the organic film is located in the arrangement region of the peripheral seal layer,
The organic electroluminescence device according to claim 1, wherein an end portion of the second inorganic film is not located in an arrangement region of the peripheral sealing layer .   The organic electroluminescence device according to claim 1, wherein the peripheral sealing layer is made of an ultraviolet curable resin. 3. An adhesive layer made of a thermosetting resin is formed inside the first substrate and the second substrate and surrounded by the peripheral sealing layer. Organic electroluminescence device. 2. The peripheral sealing layer is mixed with spherical particles having a predetermined particle diameter that regulate the distance between the first substrate and the second substrate, and the particles are made of an organic material. The organic electroluminescent apparatus of any one of Claim 3. 4. The adhesive layer is mixed with spherical particles having a predetermined particle diameter that regulate a distance between the first substrate and the second substrate, and the particles are made of an organic material. Organic electroluminescence device.   The organic electroluminescent device according to claim 1, wherein the second inorganic film is made of a silicon compound. 7. The organic material according to claim 1, wherein a contact angle with respect to a horizontal direction of the first substrate at a peripheral edge portion of the organic film is formed to be 20 ° or less. Electroluminescence device.   The organic electroluminescence device according to any one of claims 1 to 7, wherein the insulating layer is made of an inorganic insulating material. The organic material according to any one of claims 1 to 8, wherein the insulating layer is in contact with the first inorganic film in at least a part of an arrangement region of the peripheral sealing layer. Electroluminescence device. An electronic apparatus comprising the organic electroluminescence device according to any one of claims 1 to 9.

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