CN107026239A - Organic electroluminescence device and its preparation method and application - Google Patents
Organic electroluminescence device and its preparation method and application Download PDFInfo
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- CN107026239A CN107026239A CN201610846822.0A CN201610846822A CN107026239A CN 107026239 A CN107026239 A CN 107026239A CN 201610846822 A CN201610846822 A CN 201610846822A CN 107026239 A CN107026239 A CN 107026239A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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Abstract
The present invention relates to a kind of organic electroluminescence device and its preparation method and application, its structure includes:Substrate, anode array layer, pixel defining layer, light emitting functional layer, cathode layer and film layer.The film layer covers the cathode layer, the base portion of the film layer is filled in the pixel hole, the top of the film layer is provided with multiple convex portions, the distance between pixel hole of the distance between adjacent described convex portion≤adjacent, and the film layer is made of clear material, the refractive index of the film layer is more than air refraction and less than the refractive index of the cathode layer.Above-mentioned organic electroluminescence device is by setting film layer (being prepared by printing and imprinting) to improve the life-span of organic electroluminescence device with exclusion of water and oxygen, while improving the light extraction efficiency and external quantum efficiency of device.
Description
Technical field
The present invention relates to organic electroluminescence device technical field, more particularly to a kind of organic electroluminescence device and its
Preparation method and application.
Background technology
Printed form electroluminescent device must use one layer of material for being used to define pixel, the layer material in preparation process
Commonly known as bank.There is " container " of numerous sunk areas as ink on Bank layers, each sunk area corresponds to one
Individual pixel.Technological process widely used at present, is that ink is inserted into each pixel region using InkJet printing processes, ink exists
Sprawled in the region that bank is surrounded;Then, it is dried in vacuo under certain temperature (such as low temperature), it is molten by strictly controlling
The parameters such as rate of volatilization, the vapor pressure solvent of agent are so that acquisition is uniform between different zones, different pixels in guarantee pixel as far as possible
Dry;Finally, film is made thoroughly to dry by baking.After organic layer, negative electrode prepare completion, finally to electroluminescent cell
Part/panel is packaged.
Sometimes, in order to improve the light extraction efficiency of electroluminescent device, in addition it is also necessary to increase necessary optical thin film, to help electricity
The luminous energy that electroluminescence device is sent preferably is extracted from device.Typically, encapsulating structure and light extraction film are two
Independent part, is prepared respectively in the preparation process of display device, and the two has respective thickness, is also unfavorable for carrying for light
Take.
The content of the invention
Based on this, it is an object of the invention to provide a kind of organic electroluminescence device of high light extraction efficiency.
Specific technical scheme is as follows:
A kind of organic electroluminescence device, including:Substrate, anode array layer, pixel defining layer, light emitting functional layer, negative electrode
Layer and film layer;
The anode array layer is located on the substrate;
The pixel defining layer is formed on the anode array layer, and relative in the upper each anode of anode array layer
Cheated provided with pixel the position answered;
The light emitting functional layer is stacked in the pixel is cheated, and covers the anode;
The cathode layer covers the light emitting functional layer and the pixel defining layer;
The film layer covers the cathode layer, and the base portion of the film layer is filled in the pixel hole, the film layer
Top be provided with multiple convex portions, the distance between pixel hole of the distance between the adjacent convex portion≤adjacent, and institute
Film layer is stated to be made of clear material, the refractive index of the film layer between air refraction and the cathode layer refractive index it
Between.
In wherein some embodiments, the convex portion is cheated corresponding to the pixel.
In wherein some embodiments, the convex portion is shaped as convex lens shape, and cylinder, cone, polygonal pyramid type cuts
Cone, truncated pyramid or circular arc.
In wherein some embodiments, the μ of the distance between upper surface of the base portion of the film layer and the convex portion >=0.5
m。
In wherein some embodiments, the film layer is made up of at least one of following material:Molecular weight be less than etc.
The organic polymer resin of organic molecule, molecular weight more than 2000, organosilicon in 2000, metal oxide, metal vulcanization
Thing, metal selenide, metal telluride, metal chloride, metal bromide, metal iodide, metal hydroxides, silicon oxidation
Thing, silicon oxynitride, silicon nitride, graphene, thin layer graphite, mica group compound, hydrotalcite-based compound and montmorillonite class chemical combination
Thing.
In wherein some embodiments, the film layer is by least one matrix material and at least one stratified material system
Into;Described matrix material is selected from:Polyamide, polypropylene cyanogen, polybutylene terephthalate (PBT), makrolon, polymethyl
Sour methyl esters, polyethylene, it is poly- to benzene diethyl sulfone, PET, PEN, polyimides,
Polypropylene, polystyrene, polysulfones, polyvinyl chloride, polysiloxanes, polyvinylidene fluoride, polyvinyl acetate, polyureas, polytetrafluoro
Ethene or epoxy resin;Layered material is selected from:Metal sulfide, metal selenide, metal telluride, metal chloride,
Metal bromide, metal iodide, metal hydroxides, graphene, thin layer graphite, mica group compound, hydrotalcite chemical combination
Thing and montmorillonite class compound.
It is a further object of the present invention to provide the preparation method of above-mentioned organic electroluminescence device.
Specific technical scheme is as follows:
The preparation method of above-mentioned organic electroluminescence device, comprises the following steps:
Obtain the underlay substrate comprising tft array and anode array layer;
Prepare pixel defining layer:In preparing pixel defining layer on anode array layer, and made in the pixel defining layer
It is standby to obtain corresponding pixel hole;
Prepare light emitting functional layer:The light emitting functional layer is prepared in above-mentioned pixel hole, the light emitting functional layer is at least wrapped
Include one layer of luminescent layer;
Prepare cathode layer:Cathode layer is prepared in the light emitting functional layer and the pixel defining layer, the cathode layer covers
Cover the light emitting functional layer and the pixel defining layer;
Prepare film layer:The film layer is prepared on the cathode layer, the base portion of the film layer is filled in the picture
Element hole, the top of the film layer is provided with multiple convex portions, and the distance between the adjacent convex portion is less than or equal to adjacent described
The distance between pixel hole.
In wherein some embodiments, the preparation method of the film layer is:
Film layer material is dissolved in solvent, is then coated on the cathode layer, is dried under vacuum to 95-99.9%'s
Solvent volatilizees;
Impression block is obtained, the impression block is provided with multiple convex portions, and the film layer is carried out using impression block
Coining manipulation, forms the convex portion;
Vacuum drying removes residual solvent, produces the film layer.
It is a further object of the present invention to provide the display panel for including above-mentioned organic electroluminescence device.
Specific technical scheme is as follows:
A kind of display panel, includes above-mentioned organic electroluminescence device.
It is a further object of the present invention to provide the display device comprising display panel.
The present invention principle and have the beneficial effect that:
Generally, the bank (pixel defining layer) of pixel delimited area thickness is 1-1.5 μm, and the pixel defining layer is each
The corresponding position of pixel is cheated provided with pixel, and pixel hole can accommodate 50-200pL ink (film material with function), ink dries
Form film after dry, the thickness of every layer of organic layer film is generally between 10-150nm, each layer of whole electroluminescent device
Organic layer, cathode thin film gross thickness are generally between 200nm-500nm.Therefore, electroluminescent device is completed after preparing, pixel
The dented space for also having 0.5-1.3 μm of depth in delimited area is not used by.
The present invention forms a kind of (convex containing bulge-structure by the method for " printing+impressing " on whole luminescent panel
Portion) array transparent thin film layer, the film layer is characterised by:On the surface of the film layer, in imprint mode in coating
The distance between convex shape that surface is formed on multiple convex portions, transparent configuration is equal to or less than the distance between pixel hole;
Its scope being distributed is filled with the dented space in each pixel hole, and the structure at least has more than 0.5 μm of thickness;Transparent configuration
Composition material refractive index between electrode material and air.The advantage of the transparent configuration is, forms the projection of array
Structure can reduce full transmitting of the light on the top electrode at surface interface, while film layer is to electroluminescent device formation exclusion of water
With the protection of oxygen.
Above-mentioned organic electroluminescence device is by setting film layer (being prepared by printing and imprinting) can be with exclusion of water and oxygen
Gas, improves the life-span of organic electroluminescence device, while improving the light extraction efficiency and external quantum efficiency of device.And it is above-mentioned
Organic electroluminescence device will be encapsulated and light extraction the two functions are integrated in a structure, and potential further reduction is whole
The thickness of display device.
Brief description of the drawings
Fig. 1 is the structural representation of one embodiment of the invention organic electroluminescence device;
Fig. 2 is the structural representation of another embodiment of the present invention organic electroluminescence device;
Fig. 3 is a device architecture schematic diagram for implementing to be formed after light emitting functional layer and cathode layer on spr substrate;
Fig. 4 is the structural representation after the coated thin film layer material on the basis of Fig. 3.
Description of reference numerals:
10th, substrate;11st, anode array layer;12nd, pixel defining layer;13rd, light emitting functional layer;14th, cathode layer;15th, film
Layer;16th, impression block.
Embodiment
For the ease of understanding the present invention, the present invention is described more fully below with reference to relevant drawings.In accompanying drawing
Give presently preferred embodiments of the present invention.But, the present invention can be realized in many different forms, however it is not limited to this paper institutes
The embodiment of description.On the contrary, the purpose for providing these embodiments is to make the understanding to the disclosure more thorough
Comprehensively.
It should be noted that when element is referred to as " being installed on " another element, it can be directly on another element
Or can also have element placed in the middle.When an element is considered as " connection " another element, it can be direct connection
To another element or it may be simultaneously present centering elements.When an element is considered as " connection " another element, it can
To be directly to another element or may be simultaneously present centering elements.
Unless otherwise defined, all of technologies and scientific terms used here by the article is with belonging to technical field of the invention
The implication that technical staff is generally understood that is identical.Term used in the description of the invention herein is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term as used herein "and/or" includes one or more phases
The arbitrary and all combination of the Listed Items of pass.
The present invention is further elaborated by the following examples.
A kind of organic electroluminescence device of the present embodiment (as shown in Figure 1), including:Substrate 10, anode array layer 11, pixel
Define layer 12, light emitting functional layer 13, cathode layer 14 and film layer 15;
The anode array layer 11 is located on the substrate 10;
The pixel defining layer 12 is formed on the anode array layer 11, and in each sun on anode array layer 11
Cheated provided with pixel extremely corresponding position;
The light emitting functional layer 13 is stacked in the pixel is cheated, and covers the anode;
The cathode layer 14 covers the light emitting functional layer 13 and the pixel defining layer 12;
The film layer 15 covers the cathode layer 14, and the base portion of the film layer 15 is filled in the pixel hole, described
The top of film layer is provided with multiple convex portions, between the pixel hole of the distance between the adjacent convex portion≤adjacent away from
From and the film layer is made of clear material, and the refractive index of the film layer is between air refraction and the cathode layer
Between refractive index.
It should be understood that the distance between shown convex portion is equal to or less than the distance between pixel hole, i.e., each pixel
Hole may correspond to one or more convex portions.When each pixel hole corresponds to a convex portion, as shown in Figure 1;When each pixel hole
During corresponding to multiple convex portions, as shown in Figure 2.
It should be understood that the convex portion of the formation array is only needed with the shape raised up, such as convex lens shape, circle
Cylindricality, cone, polygonal pyramid type, frustoconical, truncated pyramid or circular arc etc. still, such as have the round and smooth arc of convex lens shape
Degree, with preferable effect.
Between air refraction and the refractive index of cathode layer, and can be refraction for the refractive index of film layer material
The equally distributed single layer structure of rate, or the sandwich construction of refractive index gradient change, when the refractive index ladder of the film layer
During degree change, refractive index is gradually reduced on the direction away from substrate, and for example refractive index is gradually reduced to by 1.5-2.0 scope
1.0-1.5 scope.
Consider effectively to stop water and oxygen simultaneously, and effectively using the space in pixel hole, the film layer is maximum
Thickness is not less than 0.5 μm.The film layer maximum gauge refers to the base portion lower surface that is contacted from film layer with cathode layer to film layer
The distance on the summit of the upper surface of top bump.
The material of the film layer, can be organic material or inorganic material, or multiple material mixing
Thing, for example, can be made up of at least one of following material:Organic molecule (molecular weight be less than 2000 organic molecule), have
Machine macromolecule resin (molecular weight is more than 2000), organosilicon, metal oxide, metal sulfide, metal selenide, metal telluride
Thing, metal chloride, metal bromide, metal iodide, metal hydroxides, Si oxide, silicon oxynitride, silicon nitride, stone
Black alkene, thin layer graphite, mica group compound, hydrotalcite-based compound, montmorillonite class compound.
When film layer is mixed by multiple material, wherein at least includes a kind of matrix material, and including at least one
Plant the simple substance or compound of stratified material, i.e. atom or molecule in layered arrangement.The quality percentage of matrix material and stratified material
Than that can adjust as needed.
It is preferred that, the matrix material of the film layer is made up of at least one of following material:Polyamide, polypropylene
Cyanogen, polybutylene terephthalate (PBT), makrolon, polymethyl methacrylate, polyethylene, it is poly- to benzene diethyl sulfone, poly- pair
Polyethylene terephthalate, PEN, polyimides, polypropylene, polystyrene, polysulfones, polyvinyl chloride, poly- silicon
Oxygen alkane, polyvinylidene fluoride, polyvinyl acetate, polyureas, polytetrafluoroethylene (PTFE) and epoxy resin.Above-mentioned one kind can specifically be used
Or several combinations, when using polymer monomer, it should polymerize monomer to form poly- with necessary heating or illumination methods
Compound.
It is preferred that, the stratified material in the film layer is made up of at least one of following material:Graphene, thin layer stone
Ink, mica group compound, hydrotalcite-based compound, montmorillonite class compound, metal sulfide, metal selenide, metal telluride
Thing, metal chloride, metal bromide, metal iodide, metal hydroxides.
It should be understood that the atom or molecule of layered material form closs packing in layer, so that water or oxygen
Qi leel can not be passed through.The presence of such stratified material so that water or oxygen molecule can only pass through stratiform in film layer
The gap of material and can not pass through, therefore water or oxygen molecule is reduced water oxygen through the path increase of whole film layer
Transmitance.
The preparation method of above-mentioned organic electroluminescence device, comprises the following steps:
The underlay substrate of S1, acquisition comprising tft array and anode array layer;
S2, preparation pixel defining layer:In preparing pixel defining layer on anode array layer, and by photoetching process at this
Corresponding pixel hole is prepared in pixel defining layer;
S3, preparation light emitting functional layer:The light emitting functional layer is prepared in above-mentioned pixel hole, the light emitting functional layer is at least
Including one layer of luminescent layer;
S4, prepare cathode layer:Cathode layer, the cathode layer are prepared in the light emitting functional layer and the pixel defining layer
Cover the light emitting functional layer and the pixel defining layer;
1st, pre-treatment
Before light emitting functional layer is prepared, pre-treatment can be carried out, it is specific as follows:
Substrate with anode array layer and pixel defining layer is used in alkaline cleaner and ultra-pure water and is cleaned by ultrasonic, with
Dried up, vacuum bakeout 30 minutes at 100 DEG C, handled 10 seconds with UV/ ozone with nitrogen afterwards.
2nd, light emitting functional layer and cathode layer (as shown in Figure 3) are prepared
The top of inner anode is cheated in pixel, the electroluminescent cell of top emission type is formed by way of inkjet printing and evaporation
Part.The electroluminescent device of top emitting is collectively constituted by anode, light emitting functional layer and negative electrode.Wherein top negative electrode be it is transparent or
Translucent, the light emitting functional layer between two electrodes is the organic material or inorganic material film of one or more layers film,
At least containing one layer of luminescent layer, while can be comprising the one or more in following functions layer:Hole injection layer, hole transmission layer,
Electronic barrier layer, hole blocking layer, electron transfer layer, electron injecting layer etc..And anode is the metal Ag with reflex.
It should be understood that the structure of above-mentioned device can be prepared in the following manner:
(1) hole injection layer:The example of hole injection layer material includes Amines, phthalocyanine compound, metal
Oxide (such as tungsten oxide, molybdenum oxide, vanadium oxide), polythiophene class compound;Preferably, hole injection layer material is selected from aryl
Aminated compounds.During preparation, hole-injecting material is dissolved in solvent ink is made, the solvent of the ink can include following solvent
In at least two:Chloroform, toluene, dimethylbenzene, chlorobenzene, diphenyl ether, isopropanol, dimethylaniline, water.And by obtained hole
Injection material ink is injected in pixel hole in inkjet printing mode, and uniform film-form knot is formed by vacuum drying, baking
Structure, the thickness of the hole injection layer film is 5-150nm, and thickness preferably is 10-90nm.
(2) hole transmission layer:The example of hole mobile material includes polyaryl aminated compounds, polyarylamine and its derivative
Thing, PVK and its derivative, polythiophene and its derivative;Preferably, hole transport layer material is selected from aryl amine
Compound.Hole mobile material is dissolved in mixed solvent formation ink, and the solvent of the ink can be included in following instance at least
Two kinds:Chloroform, tetrahydrofuran, ethyl acetate, toluene, dimethylbenzene, chlorobenzene, diphenyl ether, isopropanol, dimethylaniline.Hole is passed
Defeated material ink is injected in pixel hole in inkjet printing mode, and the drawout on dry hole injection layer film passes through
Vacuum drying, baking, form the hole transport layer film of covering hole injection layer, the thickness of hole transport layer film is 5-
150nm, thickness preferably is 15-60nm.
(3) luminescent layer:Luminescent layer includes small molecule and high molecular transmitting fluorescence, the organic material of phosphorescence, and quantum
Point material etc..Luminescent layer can be made up of a kind of material, for example quantum dot light emitting material.Luminescent layer can also be by two kinds or two kinds
Above material is constituted, and wherein at least includes a kind of material of main part, and including at least a kind of dopant material.The example of material of main part
Including carbazole compound or polymer containing aromatic substituent, Benzophenanthrene compound or polymerization containing aromatic substituent
Thing, containing fragrance substitution and benzothiophenes or polymer, the compound in triazine class containing aromatic substituent or poly-
Compound etc.;Preferably, material of main part is selected from carbazole compound or polymer containing aromatic substituent, contains aromatic substituent
Benzophenanthrene compound or polymer.The example of dopant material includes the compound containing Ir elements, the change containing Pt elements
Compound, the compound containing Cu (I), the compound containing Os elements, delayed fluorescence class compound;Preferably, dopant material is selected
From the metal complex of also Ir elements, the metal complex containing Pt elements, delayed fluorescence class compound.Emitting layer material is molten
In mixed solvent formation ink, the solvent of the ink includes at least two in following instance:Chloroform, tetrahydrofuran, acetic acid
Ethyl ester, toluene, dimethylbenzene, chlorobenzene, diphenyl ether, isopropanol, dimethylaniline.The ink of emitting layer material is in inkjet printing mode
Inject in pixel hole, deploy on dry hole transport layer film upper berth, by vacuum drying, baking, formation is covered in
Luminous layer film on hole transmission layer, the thickness for the layer film that lights is 10-100nm, and thickness preferably is 20-60nm.
(4) electron transfer layer:The example of electron transport material includes the compound containing aromatic substituent, is taken containing fragrance
For Ji oxadiazole compounds, the quinone compounds containing aromatic substituent, the triaizine compounds containing aromatic substituent, 8- hydroxyls
Base quinoline metal complex etc.;Preferably, electron transport layer materials are selected from the triaizine compounds containing aromatic substituent, 8- hydroxyls
Quinoline metal complex.Electron transfer layer is prepared by the way of evaporation, and thickness is 10-60nm, and thickness preferably is 20-
50nm。
(5) negative electrode:Transparent or semitransparent negative electrode is conductive oxide (such as ITO, FTO, the zinc oxide of doping), thin layer
Metal (alloys of such as Ag, Al, Mg or this several metal), or graphene.It is heavy with sputtering or gas phase under vacuum
Product mode forms negative electrode, and negative electrode is covered in the top of light emitting functional layer and pixel defining layer, forms the shared top electricity of each electrode
Pole.
S4, preparation film layer:Prepare the film layer on the cathode layer, the base portion of the film layer is filled in described
Pixel is cheated, and the top of the film layer is provided with multiple convex portions, and the distance between the adjacent convex portion is less than the adjacent picture
The distance between element hole.
The preparation method of the film layer is:
(1) film layer material is dissolved in solvent, is then coated on the cathode layer, is dried under vacuum to 95-
99.9% solvent volatilization;
The composition material of the film layer is uniformly mixed, the composition material formation liquid of the film layer is flowed
In order to print coating, forming the mode of liquid includes wherein at least one material progress heating being melt into liquid, or will
The composition material of the film layer adds in solvent and forms liquefied mixture;
The film layer material is coated on electroluminescent display substrate with mode of printing, filler pixels hole, and
Cover pixel defining layer and cathode layer (as shown in Figure 4);
Film layer material is pre-processed:When film layer material forms liquid in the way of melting one of which material component
State, then reducing the temperature of fusible component reduces material flowability, and the glassy state for then maintaining the temperature at fusible component turns
Between temperature and fusing point;When film layer material forms liquid in the way of adding solvent, then make 95%- under vacuum conditions
99.9% most of solvent volatilizees to reduce the mobility of material, while also leaving lacking for 0.1%-5% in film layer material
The ability measured solvent and make material retain machining deformation;
(2) impression block 16 is obtained, the impression block is provided with multiple convex portions, using impression block to the film layer
Coining manipulation is carried out, the convex portion is formed;
To film layer material carry out impressing processing, make film layer top obtain into array-like arrangement convex portion, convex portion it
Between distance be less than or equal to the distance between pixel;
(3) vacuum drying removes residual solvent, produces the film layer.
Vacuum heating treatment is carried out to film layer material, fully to remove moisture therein or residual solvent, then in nitrogen
Compression ring is cooled to room temperature under border, produces the film layer.
In practice, for preparing film layer structure, it can be formed before encapsulation process, can also be after encapsulation process
Formed, or film layer is a part in encapsulating structure in itself.
It should be understood that after the completion of prepared by above-mentioned film layer, can also further be sealed to whole display base plate or device
Dress protection.For example, that is, on the whole display base plate including film layer structure, PECVD side can be used by the way of thin-film package
Formula deposits 5nm-100 μm one or more layers encapsulating material, the example of encapsulating material include silicon nitride, silica, silicon oxynitride,
One or more of combinations in organosilicon (polysiloxanes), aluminum oxide, zirconium oxide, aluminium nitride.
The present embodiment uses the processing mode of " printing+impressing ", has with the transparent material formation with appropriate index
The film layer of convex portion array, the packaging protection of water oxygen is completely cut off to organic electroluminescence device formation to improve the life-span, while can also
Strengthen the light extraction efficiency of electroluminescent device, that is, form a kind of transparent configuration with " light extraction+encapsulation " dual-use function.
This advantage for inventing the mode of used printing+impressing is, can be rapidly in the electroluminescent of large area
Required geometric figure is obtained on device.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality
Apply all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, the scope of this specification record is all considered to be.
Embodiment described above only expresses the several embodiments of the present invention, and it describes more specific and detailed, but simultaneously
Can not therefore it be construed as limiting the scope of the patent.It should be pointed out that coming for one of ordinary skill in the art
Say, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention
Scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
1. a kind of organic electroluminescence device, it is characterised in that including:Substrate, anode array layer, pixel defining layer, luminous work(
Ergosphere, cathode layer and film layer;
The anode array layer is located on the substrate;
The pixel defining layer is formed on the anode array layer, and corresponding in the upper each anode of anode array layer
Cheated provided with pixel position;
The light emitting functional layer is stacked in the pixel is cheated, and covers the anode;
The cathode layer covers the light emitting functional layer and the pixel defining layer;
The film layer covers the cathode layer, and the base portion of the film layer is filled in the pixel hole, the top of the film layer
Portion is provided with multiple convex portions, the distance between pixel hole of the distance between the adjacent convex portion≤adjacent, and described thin
Film layer is made of clear material, and the refractive index of the film layer is between the refractive index of air refraction and the cathode layer.
2. organic electroluminescence device according to claim 1, it is characterised in that the convex portion corresponds to the pixel
Hole.
3. organic electroluminescence device according to claim 1, it is characterised in that the convex portion is shaped as convex lens
Shape, cylinder, cone, polygonal pyramid type, frustoconical, truncated pyramid or circular arc.
4. organic electroluminescence device according to claim 1, it is characterised in that the base portion of the film layer with it is described convex
The distance between the upper surface in portion >=0.5 μm.
5. the organic electroluminescence device according to claim any one of 1-4, it is characterised in that the film layer is by following
At least one of material is made:Molecular weight is less than or equal to organic high score that 2000 organic molecule, molecular weight are more than 2000
Subtree fat, organosilicon, metal oxide, metal sulfide, metal selenide, metal telluride, metal chloride, metal bromide
Thing, metal iodide, metal hydroxides, Si oxide, silicon oxynitride, silicon nitride, graphene, thin layer graphite, mica group
Compound, hydrotalcite-based compound and montmorillonite class compound.
6. the organic electroluminescence device according to claim any one of 1-4, it is characterised in that the film layer is by least
A kind of matrix material and at least one stratified material are made;Described matrix material is selected from:It is polyamide, polypropylene cyanogen, poly- to benzene
It is dioctyl phthalate butanediol ester, makrolon, polymethyl methacrylate, polyethylene, poly- to benzene diethyl sulfone, poly terephthalic acid second
It is diester, PEN, polyimides, polypropylene, polystyrene, polysulfones, polyvinyl chloride, polysiloxanes, poly- inclined
Difluoroethylene, polyvinyl acetate, polyureas, polytetrafluoroethylene (PTFE) or epoxy resin;Layered material is selected from:Metal sulfide,
It is metal selenide, metal telluride, metal chloride, metal bromide, metal iodide, metal hydroxides, graphene, thin
Layer graphite, mica group compound, hydrotalcite-based compound and montmorillonite class compound.
7. the preparation method of the organic electroluminescence device described in claim any one of 1-6, it is characterised in that including following step
Suddenly:
Obtain the underlay substrate comprising tft array and anode array layer;
Prepare pixel defining layer:In preparing pixel defining layer on anode array layer, and it is prepared into the pixel defining layer
To corresponding pixel hole;
Prepare light emitting functional layer:The light emitting functional layer is prepared in above-mentioned pixel hole, the light emitting functional layer at least includes one
Layer luminescent layer;
Prepare cathode layer:Cathode layer is prepared in the light emitting functional layer and the pixel defining layer, the cathode layer covers institute
State light emitting functional layer and the pixel defining layer;
Prepare film layer:The film layer is prepared on the cathode layer, the base portion of the film layer is filled in the pixel hole,
The top of the film layer is provided with multiple convex portions, and the distance between the adjacent convex portion is less than or equal to the adjacent pixel
The distance between hole.
8. the preparation method of organic electroluminescence device according to claim 7, it is characterised in that the system of the film layer
Preparation Method is:
Film layer material is dissolved in solvent, is then coated on the cathode layer, 95-99.9% solvent is dried under vacuum to
Volatilization;
Impression block is obtained, the impression block is provided with multiple convex portions, the film layer is imprinted using impression block
Operation, forms the convex portion;
Vacuum drying removes residual solvent, produces the film layer.
9. a kind of display panel, it is characterised in that include the organic electroluminescence device described in claim any one of 1-6.
10. a kind of display device, it is characterised in that include the display panel described in claim 9.
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Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109166966A (en) * | 2018-08-10 | 2019-01-08 | 深圳市华星光电半导体显示技术有限公司 | A kind of preparation method and organic light emitting display of display device |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030001457A1 (en) * | 2001-06-29 | 2003-01-02 | Data Storage Institute | Flat panel display and method of manufacture |
JP2012216454A (en) * | 2011-04-01 | 2012-11-08 | Seiko Epson Corp | Light-emitting device and electronic apparatus |
CN103715372A (en) * | 2013-12-26 | 2014-04-09 | 京东方科技集团股份有限公司 | Oled display panel and manufacturing method thereof |
CN105493624A (en) * | 2013-06-12 | 2016-04-13 | 三菱丽阳株式会社 | Light-extraction film for el, method for manufacturing light-extraction film for el, and planar light-emitting body |
CN105531824A (en) * | 2013-07-08 | 2016-04-27 | 皮瑟莱根特科技有限责任公司 | Advanced light extraction structure |
CN105576000A (en) * | 2014-11-03 | 2016-05-11 | 三星显示有限公司 | Organic light-emitting display apparatus |
-
2016
- 2016-09-22 CN CN201610846822.0A patent/CN107026239B/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030001457A1 (en) * | 2001-06-29 | 2003-01-02 | Data Storage Institute | Flat panel display and method of manufacture |
JP2012216454A (en) * | 2011-04-01 | 2012-11-08 | Seiko Epson Corp | Light-emitting device and electronic apparatus |
CN105493624A (en) * | 2013-06-12 | 2016-04-13 | 三菱丽阳株式会社 | Light-extraction film for el, method for manufacturing light-extraction film for el, and planar light-emitting body |
CN105531824A (en) * | 2013-07-08 | 2016-04-27 | 皮瑟莱根特科技有限责任公司 | Advanced light extraction structure |
CN103715372A (en) * | 2013-12-26 | 2014-04-09 | 京东方科技集团股份有限公司 | Oled display panel and manufacturing method thereof |
CN105576000A (en) * | 2014-11-03 | 2016-05-11 | 三星显示有限公司 | Organic light-emitting display apparatus |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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CN111384286B (en) * | 2018-12-29 | 2021-07-06 | Tcl科技集团股份有限公司 | Quantum dot light-emitting diode and preparation method thereof |
CN111384286A (en) * | 2018-12-29 | 2020-07-07 | Tcl集团股份有限公司 | Quantum dot light-emitting diode and preparation method thereof |
CN111180604A (en) * | 2019-03-14 | 2020-05-19 | 广东聚华印刷显示技术有限公司 | Packaging structure, preparation method thereof and display panel |
CN111180604B (en) * | 2019-03-14 | 2022-10-25 | 广东聚华印刷显示技术有限公司 | Packaging structure, preparation method thereof and display panel |
CN110323353A (en) * | 2019-04-24 | 2019-10-11 | 昆山工研院新型平板显示技术中心有限公司 | OLED display panel and display device |
CN110323353B (en) * | 2019-04-24 | 2021-09-28 | 昆山工研院新型平板显示技术中心有限公司 | OLED display panel and display device |
CN110208886A (en) * | 2019-05-23 | 2019-09-06 | 广东聚华印刷显示技术有限公司 | Light extraction structures manufacturing method, dot structure and display panel |
CN110376162A (en) * | 2019-07-16 | 2019-10-25 | 湖北工程学院 | A kind of graphene index sensor based on PIT effect |
CN112310293A (en) * | 2019-07-30 | 2021-02-02 | 陕西坤同半导体科技有限公司 | Organic light-emitting device |
CN111584742A (en) * | 2020-05-13 | 2020-08-25 | 武汉华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
CN111864112A (en) * | 2020-07-22 | 2020-10-30 | 武汉华星光电半导体显示技术有限公司 | Array substrate, array substrate manufacturing method and display panel |
CN111864112B (en) * | 2020-07-22 | 2022-06-10 | 武汉华星光电半导体显示技术有限公司 | Array substrate, array substrate manufacturing method and display panel |
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CN113363403A (en) * | 2021-06-09 | 2021-09-07 | 京东方科技集团股份有限公司 | Display panel and display device |
CN115535335A (en) * | 2022-10-27 | 2022-12-30 | 重庆大学 | Device and method for preparing giant electrorheological fluid variable-stiffness elastic ball group |
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