JP2012207263A - 蒸着方法および蒸着装置 - Google Patents
蒸着方法および蒸着装置 Download PDFInfo
- Publication number
- JP2012207263A JP2012207263A JP2011073410A JP2011073410A JP2012207263A JP 2012207263 A JP2012207263 A JP 2012207263A JP 2011073410 A JP2011073410 A JP 2011073410A JP 2011073410 A JP2011073410 A JP 2011073410A JP 2012207263 A JP2012207263 A JP 2012207263A
- Authority
- JP
- Japan
- Prior art keywords
- vapor deposition
- gas
- crucible
- nozzle
- gas supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007740 vapor deposition Methods 0.000 title claims abstract description 244
- 238000000034 method Methods 0.000 title claims description 157
- 239000000463 material Substances 0.000 claims abstract description 133
- 238000001816 cooling Methods 0.000 claims abstract description 105
- 238000001704 evaporation Methods 0.000 claims abstract description 83
- 230000008020 evaporation Effects 0.000 claims abstract description 82
- 238000010438 heat treatment Methods 0.000 claims abstract description 62
- 238000007599 discharging Methods 0.000 claims abstract description 4
- 239000007789 gas Substances 0.000 claims description 245
- 239000011261 inert gas Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 abstract description 69
- 238000002360 preparation method Methods 0.000 abstract description 11
- 238000005516 engineering process Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 139
- 230000008569 process Effects 0.000 description 94
- 230000015572 biosynthetic process Effects 0.000 description 39
- 238000005401 electroluminescence Methods 0.000 description 26
- 238000012986 modification Methods 0.000 description 22
- 230000004048 modification Effects 0.000 description 22
- 238000000151 deposition Methods 0.000 description 21
- 230000008021 deposition Effects 0.000 description 19
- 230000000052 comparative effect Effects 0.000 description 18
- 239000012044 organic layer Substances 0.000 description 18
- 239000010410 layer Substances 0.000 description 16
- 238000005019 vapor deposition process Methods 0.000 description 16
- 238000012423 maintenance Methods 0.000 description 13
- 238000012546 transfer Methods 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 238000009834 vaporization Methods 0.000 description 10
- 230000008016 vaporization Effects 0.000 description 10
- 238000002309 gasification Methods 0.000 description 8
- 239000012071 phase Substances 0.000 description 8
- 238000010926 purge Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229920006395 saturated elastomer Polymers 0.000 description 6
- 238000000859 sublimation Methods 0.000 description 6
- 230000008022 sublimation Effects 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 230000005525 hole transport Effects 0.000 description 5
- 239000002244 precipitate Substances 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 238000010583 slow cooling Methods 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- 239000000470 constituent Substances 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000004904 shortening Methods 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000007562 laser obscuration time method Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000000414 obstructive effect Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011073410A JP2012207263A (ja) | 2011-03-29 | 2011-03-29 | 蒸着方法および蒸着装置 |
KR1020120012968A KR101363147B1 (ko) | 2011-03-29 | 2012-02-08 | 증착 방법 및 증착 장치 |
CN2012100343958A CN102732838A (zh) | 2011-03-29 | 2012-02-15 | 蒸镀方法及蒸镀装置 |
TW101106005A TW201239122A (en) | 2011-03-29 | 2012-02-23 | Vapor deposition method and vapor deposition device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011073410A JP2012207263A (ja) | 2011-03-29 | 2011-03-29 | 蒸着方法および蒸着装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2012207263A true JP2012207263A (ja) | 2012-10-25 |
Family
ID=46989127
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011073410A Pending JP2012207263A (ja) | 2011-03-29 | 2011-03-29 | 蒸着方法および蒸着装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2012207263A (zh) |
KR (1) | KR101363147B1 (zh) |
CN (1) | CN102732838A (zh) |
TW (1) | TW201239122A (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014105375A (ja) * | 2012-11-29 | 2014-06-09 | Optorun Co Ltd | 真空蒸着源及びそれを用いた真空蒸着方法 |
KR101784202B1 (ko) | 2011-12-22 | 2017-10-12 | 주식회사 원익아이피에스 | 콜드립을 구비하는 증발원 |
CN108660420A (zh) * | 2018-07-25 | 2018-10-16 | 华夏易能(广东)新能源科技有限公司 | 真空蒸镀设备及蒸发源装置 |
WO2018199184A1 (ja) * | 2017-04-26 | 2018-11-01 | 株式会社アルバック | 蒸発源及び成膜装置 |
JP2020143315A (ja) * | 2019-03-05 | 2020-09-10 | 日本エア・リキード合同会社 | 固体材料容器 |
WO2021107224A1 (ko) * | 2019-11-29 | 2021-06-03 | 엘지전자 주식회사 | 증착 장치 |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI477625B (zh) * | 2012-12-26 | 2015-03-21 | Au Optronics Corp | 蒸鍍裝置 |
KR101413610B1 (ko) * | 2013-01-31 | 2014-07-08 | 부산대학교 산학협력단 | 대면적 균일 박막 형성용 진공 증발원 |
WO2014174803A1 (ja) * | 2013-04-22 | 2014-10-30 | パナソニック株式会社 | El表示装置の製造方法 |
KR20150004646A (ko) * | 2013-07-03 | 2015-01-13 | 삼성디스플레이 주식회사 | 증착원 |
CN104294217A (zh) * | 2013-07-18 | 2015-01-21 | 上海和辉光电有限公司 | 蒸发源装置 |
TWI473894B (zh) * | 2013-09-11 | 2015-02-21 | Au Optronics Corp | 蒸鍍設備 |
CN103668083B (zh) * | 2013-12-13 | 2016-10-19 | 京东方科技集团股份有限公司 | 冷却装置以及真空蒸镀设备 |
CN103695847B (zh) * | 2013-12-24 | 2016-03-16 | 京东方科技集团股份有限公司 | 坩埚及其蒸镀方法 |
KR102222876B1 (ko) * | 2014-01-10 | 2021-03-04 | 주식회사 선익시스템 | 증착장치용 증발원 |
JP6584067B2 (ja) * | 2014-05-30 | 2019-10-02 | 日立造船株式会社 | 真空蒸着装置 |
CN104746017B (zh) * | 2015-04-13 | 2017-08-25 | 清华大学 | 电极蒸镀装置 |
SG10201510101XA (en) * | 2015-12-09 | 2017-07-28 | Au Optronics Corp | Evaporation apparatus and evaporation method |
CN105762278B (zh) * | 2016-03-04 | 2018-05-01 | 苏州大学 | 一种真空蒸镀装置及利用其制备有机电致发光器件的方法 |
TWI586823B (zh) * | 2016-11-25 | 2017-06-11 | Nat Chung-Shan Inst Of Science And Tech | Apparatus and method for quantifying the amount of solid matter deposited |
JP6468540B2 (ja) * | 2017-05-22 | 2019-02-13 | キヤノントッキ株式会社 | 基板搬送機構、基板載置機構、成膜装置及びそれらの方法 |
CN109402592B (zh) * | 2017-08-18 | 2020-06-26 | Tcl科技集团股份有限公司 | 器件侧面蒸镀装置及器件侧面蒸镀方法 |
JP6576009B2 (ja) * | 2017-08-28 | 2019-09-18 | キヤノントッキ株式会社 | 蒸発源容器及び蒸発源装置 |
CN107779824A (zh) * | 2017-12-07 | 2018-03-09 | 合肥鑫晟光电科技有限公司 | 蒸发源、蒸镀装置以及有机电致发光显示器的生产设备 |
JP6595568B2 (ja) * | 2017-12-12 | 2019-10-23 | キヤノントッキ株式会社 | 蒸発源装置及び蒸着装置 |
CN109290740B (zh) * | 2018-10-18 | 2021-03-02 | 重庆文理学院 | 一种在加热处理过程中控制柱塞热变形的工艺方法 |
CN110344002B (zh) * | 2019-06-11 | 2022-03-22 | 惠科股份有限公司 | 一种蒸镀装置和蒸镀方法 |
FR3102189B1 (fr) * | 2019-10-17 | 2022-08-05 | Riber | Cellule d’évaporation pour chambre d’évaporation sous vide et procédé d’évaporation associé |
CN110724911B (zh) * | 2019-11-06 | 2021-11-02 | 深圳市华星光电半导体显示技术有限公司 | 蒸镀坩埚、蒸镀系统及蒸镀oled的方法 |
JP6959680B1 (ja) * | 2020-11-13 | 2021-11-05 | 株式会社シンクロン | 成膜装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0525613A (ja) * | 1991-07-23 | 1993-02-02 | Shibaura Eng Works Co Ltd | 均熱部材の冷却方法 |
JP2008115416A (ja) * | 2006-11-02 | 2008-05-22 | Canon Inc | 真空蒸着源および真空蒸着装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000212731A (ja) * | 1999-01-25 | 2000-08-02 | Victor Co Of Japan Ltd | 蒸着装置 |
JP3485104B2 (ja) * | 2001-04-24 | 2004-01-13 | 日新電機株式会社 | イオン源用オーブン |
JP4342868B2 (ja) | 2003-08-11 | 2009-10-14 | 株式会社アルバック | 成膜装置 |
KR100761079B1 (ko) * | 2005-01-31 | 2007-09-21 | 삼성에스디아이 주식회사 | 냉각수단을 갖는 증발원 및 이를 이용한 증착 장치 |
KR100671673B1 (ko) * | 2005-03-09 | 2007-01-19 | 삼성에스디아이 주식회사 | 다중 진공증착장치 및 제어방법 |
KR100887703B1 (ko) * | 2007-05-18 | 2009-03-11 | 아이시스(주) | 일체형 애노드를 구비한 이온 플레이팅 장치 |
-
2011
- 2011-03-29 JP JP2011073410A patent/JP2012207263A/ja active Pending
-
2012
- 2012-02-08 KR KR1020120012968A patent/KR101363147B1/ko not_active IP Right Cessation
- 2012-02-15 CN CN2012100343958A patent/CN102732838A/zh active Pending
- 2012-02-23 TW TW101106005A patent/TW201239122A/zh unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0525613A (ja) * | 1991-07-23 | 1993-02-02 | Shibaura Eng Works Co Ltd | 均熱部材の冷却方法 |
JP2008115416A (ja) * | 2006-11-02 | 2008-05-22 | Canon Inc | 真空蒸着源および真空蒸着装置 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101784202B1 (ko) | 2011-12-22 | 2017-10-12 | 주식회사 원익아이피에스 | 콜드립을 구비하는 증발원 |
JP2014105375A (ja) * | 2012-11-29 | 2014-06-09 | Optorun Co Ltd | 真空蒸着源及びそれを用いた真空蒸着方法 |
WO2018199184A1 (ja) * | 2017-04-26 | 2018-11-01 | 株式会社アルバック | 蒸発源及び成膜装置 |
JPWO2018199184A1 (ja) * | 2017-04-26 | 2019-06-27 | 株式会社アルバック | 蒸発源及び成膜装置 |
CN108660420A (zh) * | 2018-07-25 | 2018-10-16 | 华夏易能(广东)新能源科技有限公司 | 真空蒸镀设备及蒸发源装置 |
WO2020019538A1 (zh) * | 2018-07-25 | 2020-01-30 | 华夏易能(广东)新能源科技有限公司 | 真空蒸镀设备及蒸发源装置 |
JP2020143315A (ja) * | 2019-03-05 | 2020-09-10 | 日本エア・リキード合同会社 | 固体材料容器 |
WO2021107224A1 (ko) * | 2019-11-29 | 2021-06-03 | 엘지전자 주식회사 | 증착 장치 |
Also Published As
Publication number | Publication date |
---|---|
KR20120111987A (ko) | 2012-10-11 |
KR101363147B1 (ko) | 2014-02-13 |
CN102732838A (zh) | 2012-10-17 |
TW201239122A (en) | 2012-10-01 |
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