JP2012204433A - 有機分子メモリ - Google Patents
有機分子メモリ Download PDFInfo
- Publication number
- JP2012204433A JP2012204433A JP2011065294A JP2011065294A JP2012204433A JP 2012204433 A JP2012204433 A JP 2012204433A JP 2011065294 A JP2011065294 A JP 2011065294A JP 2011065294 A JP2011065294 A JP 2011065294A JP 2012204433 A JP2012204433 A JP 2012204433A
- Authority
- JP
- Japan
- Prior art keywords
- organic
- molecular
- molecular chain
- charge
- molecule
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015654 memory Effects 0.000 title claims abstract description 96
- 230000008859 change Effects 0.000 claims abstract description 35
- 239000002052 molecular layer Substances 0.000 claims description 80
- 125000006575 electron-withdrawing group Chemical group 0.000 claims description 67
- 125000001153 fluoro group Chemical group F* 0.000 claims description 11
- 229910052731 fluorine Inorganic materials 0.000 claims description 9
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 6
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 125000001309 chloro group Chemical group Cl* 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 27
- 230000005684 electric field Effects 0.000 description 24
- 230000014759 maintenance of location Effects 0.000 description 24
- 239000010931 gold Substances 0.000 description 22
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 18
- 229910052737 gold Inorganic materials 0.000 description 17
- 239000000758 substrate Substances 0.000 description 17
- 238000005259 measurement Methods 0.000 description 16
- 230000010287 polarization Effects 0.000 description 16
- 230000005641 tunneling Effects 0.000 description 15
- 238000010586 diagram Methods 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 239000000523 sample Substances 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 230000009471 action Effects 0.000 description 10
- 239000010949 copper Substances 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 230000006870 function Effects 0.000 description 9
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 9
- RMVRSNDYEFQCLF-UHFFFAOYSA-N thiophenol Chemical compound SC1=CC=CC=C1 RMVRSNDYEFQCLF-UHFFFAOYSA-N 0.000 description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 8
- 229910052750 molybdenum Inorganic materials 0.000 description 8
- 239000011733 molybdenum Substances 0.000 description 8
- 125000005647 linker group Chemical group 0.000 description 7
- PMBXCGGQNSVESQ-UHFFFAOYSA-N 1-Hexanethiol Chemical compound CCCCCCS PMBXCGGQNSVESQ-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000004913 activation Effects 0.000 description 6
- 238000006073 displacement reaction Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 229910052715 tantalum Inorganic materials 0.000 description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 238000009825 accumulation Methods 0.000 description 5
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 239000013545 self-assembled monolayer Substances 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- YIYFFLYGSHJWFF-UHFFFAOYSA-N [Zn].N1C(C=C2N=C(C=C3NC(=C4)C=C3)C=C2)=CC=C1C=C1C=CC4=N1 Chemical class [Zn].N1C(C=C2N=C(C=C3NC(=C4)C=C3)C=C2)=CC=C1C=C1C=CC4=N1 YIYFFLYGSHJWFF-UHFFFAOYSA-N 0.000 description 4
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 4
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000005036 potential barrier Methods 0.000 description 4
- 239000002094 self assembled monolayer Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 3
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 3
- 125000005678 ethenylene group Chemical group [H]C([*:1])=C([H])[*:2] 0.000 description 3
- 125000005843 halogen group Chemical group 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- -1 terphenyl thiol Chemical class 0.000 description 3
- 125000003396 thiol group Chemical group [H]S* 0.000 description 3
- 150000003573 thiols Chemical class 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N Furan Chemical compound C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000004069 differentiation Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical class FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 description 1
- 125000000094 2-phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 1
- HSAKNFPXLQYFIJ-UHFFFAOYSA-N 4-[4-(4-sulfanylphenyl)phenyl]benzenethiol Chemical compound C1=CC(S)=CC=C1C1=CC=C(C=2C=CC(S)=CC=2)C=C1 HSAKNFPXLQYFIJ-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- PRPAGESBURMWTI-UHFFFAOYSA-N [C].[F] Chemical group [C].[F] PRPAGESBURMWTI-UHFFFAOYSA-N 0.000 description 1
- 125000003158 alcohol group Chemical group 0.000 description 1
- 150000001345 alkine derivatives Chemical class 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000003915 cell function Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium(II) oxide Chemical compound [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
- G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
- H01L29/42348—Gate electrodes for transistors with charge trapping gate insulator with trapping site formed by at least two separated sites, e.g. multi-particles trapping site
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/50—Bistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/701—Organic molecular electronic devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/671—Organic radiation-sensitive molecular electronic devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/50—Resistive cell structure aspects
- G11C2213/53—Structure wherein the resistive material being in a transistor, e.g. gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/381—Metal complexes comprising a group IIB metal element, e.g. comprising cadmium, mercury or zinc
Abstract
【解決手段】実施の形態の有機分子メモリは、有機分子メモリは第1の導電層と、第2の導電層と、第1の導電層と第2の導電層との間に設けられ、抵抗変化型分子鎖または電荷蓄積型分子鎖を含み、抵抗変化型分子鎖または電荷蓄積型分子鎖が電子吸引基を備える有機分子層とを備えている。
【選択図】図1
Description
本実施の形態の有機分子メモリは、有機分子メモリは第1の導電層と、第2の導電層と、第1の導電層と第2の導電層との間に設けられ、抵抗変化型分子鎖または電荷蓄積型分子鎖を含み、抵抗変化型分子鎖または電荷蓄積型分子鎖が電子吸引基を備える有機分子層とを備えている。
上部電極14表面のモリブデン(Mo)原子と化学結合していない。
(1) 電極からの逆符号電荷のトンネリング注入、
(2) 分子内から電極への電荷のホッピング、
の2つのメカニズムによると考えられる。
金基板上にターフェニルチオールの自己組織化膜を形成した試料を、走査型トンネル顕微鏡を用いて観察する。分子の先端が確認できるので、分子の先端に走査型トンネル顕微鏡のプローブ針を接近させ、基板とプローブ針間にバイアスを印加することにより、単一分子の電気特性の測定ができる。電流の測定結果から分極エネルギーW1を算出すると、0.36eVとなった。ターフェニルチオール分子集団の比誘電率ε1は3.1(文献値)である。
金基板上にヘキサンチオール95%に対してターフェニルチオール5%となる重量混合比の自己組織化膜を形成した試料を、走査型トンネル顕微鏡を用いて観察する。ヘキサンチオールに比較しターフェニルチオールの方が分子鎖が長いため、試料上にターフェニルチオール分子の先端が飛び出た構造が観測される。この分子の先端に走査型トンネル顕微鏡のプローブ針を接近させ、基板とプローブ針間にバイアスを印加することにより、単一分子の電気特性の測定ができる。電流の測定結果から分極エネルギーW2を算出すると、0.22eVとなった。ヘキサンチオールの比誘電率ε2は2.3である。
第1の実施の形態の有機分子メモリが、メモリ素子となる抵抗変化型分子鎖自体が電子吸引基を備えていたのに対し、本実施の形態の有機分子メモリは、メモリ素子となる抵抗変化型分子鎖を含む第1の有機分子とは別に、電子吸引基を備える第2の有機分子を有機分子層中に含む。この点で、第1の実施の形態と異なっている。以下、基板、電極、抵抗変化型分子鎖、電子吸引基等で第1の実施の形態と重複する内容については記載を省略する。
本実施の形態の有機分子メモリは、第1の実施の形態の有機分子メモリが、抵抗変化型分子鎖を用いたクロスポイント型の有機分子メモリであるのに対し、電荷蓄積型分子鎖を用いた積層ゲート型の有機分子メモリである点で異なっている。また、電気双極子による作用や効果、比誘電率を増加させることによる作用や効果等、第1の実施の形態と重複する内容については記述を省略する。
本実施の形態の有機分子メモリは、第3の実施の形態の有機分子メモリが、メモリ素子となる電荷蓄積型分子鎖自体が電子吸引基を備えていたのに対し、メモリ素子となる電荷蓄積型分子鎖を含む第1の有機分子とは別に、電子吸引基を備える第2の有機分子を有機分子層中に含む。この点で、第3の実施の形態と異なっている。以下、基板、電極、電価蓄積型分子鎖、電子吸引基等で第3の実施の形態と重複する内容については記載を省略する。
金基板上に、分子4−[2−nitro−5−amino−4−(phenylethynyl)phenylethynyl]benzenethiolの上下2つのフェニル基に各々4つのフッ素原子を導入し、可動で大きな電気双極子能率を持たせた分子の自己組織化膜を形成する。この分子は第1の実施の形態の図3に示した分子に相当する。その上に、金電極を形成し有機分子メモリを作製する。
金基板上に、フッ素が導入されない4−[2−nitro−5−amino−4−(phenylethynyl)phenylethynyl]benzenethiolの自己組織化膜を形成すること以外は、実施例と同様に有機分子メモリを作成し、評価する。
14 第2の導電層
16 有機分子層
16a 抵抗変化型分子鎖を含む(第1の有機分子)
16b 電子吸引基を有する有機分子(第2の有機分子)
26 有機分子層
26a 電荷蓄積型分子鎖を含む有機分子(第1の有機分子)
26b 電子吸引基を有する有機分子(第2の有機分子)
Claims (4)
- 第1の導電層と、
第2の導電層と、
前記第1の導電層と前記第2の導電層との間に設けられ、抵抗変化型分子鎖または電荷蓄積型分子鎖を含み、前記抵抗変化型分子鎖または前記電荷蓄積型分子鎖が電子吸引基を備える有機分子層と、
を有することを特徴とする有機分子メモリ。 - 第1の導電層と、
第2の導電層と、
前記第1の導電層と前記第2の導電層との間に設けられ、抵抗変化型分子鎖または電荷蓄積型分子鎖を含む第1の有機分子と、電子吸引基を備える第2の有機分子とを含む有機分子層と、
を有することを特徴とする有機分子メモリ。 - 前記有機分子層の比誘電率が5.5以上であることを特徴とする請求項1または請求項2記載の有機分子メモリ。
- 前記電子吸引基がフッ素原子、塩素原子、またはシアノ基であることを特徴とする請求項1ないし請求項3いずれか一項記載の有機分子メモリ。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011065294A JP5717490B2 (ja) | 2011-03-24 | 2011-03-24 | 有機分子メモリ |
EP12760616.8A EP2689479A4 (en) | 2011-03-24 | 2012-03-21 | ORGANIC MOLECULAR MEMORY |
PCT/JP2012/001956 WO2012127863A1 (en) | 2011-03-24 | 2012-03-21 | Organic molecular memory |
CN201280009970.7A CN103403905B (zh) | 2011-03-24 | 2012-03-21 | 有机分子存储器 |
TW101109862A TWI528366B (zh) | 2011-03-24 | 2012-03-22 | 有機分子記憶體 |
US14/022,756 US9054324B2 (en) | 2011-03-24 | 2013-09-10 | Organic molecular memory |
US14/703,075 US9515195B2 (en) | 2011-03-24 | 2015-05-04 | Organic molecular memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011065294A JP5717490B2 (ja) | 2011-03-24 | 2011-03-24 | 有機分子メモリ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012204433A true JP2012204433A (ja) | 2012-10-22 |
JP5717490B2 JP5717490B2 (ja) | 2015-05-13 |
Family
ID=46879035
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011065294A Expired - Fee Related JP5717490B2 (ja) | 2011-03-24 | 2011-03-24 | 有機分子メモリ |
Country Status (6)
Country | Link |
---|---|
US (2) | US9054324B2 (ja) |
EP (1) | EP2689479A4 (ja) |
JP (1) | JP5717490B2 (ja) |
CN (1) | CN103403905B (ja) |
TW (1) | TWI528366B (ja) |
WO (1) | WO2012127863A1 (ja) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015065220A (ja) * | 2013-09-24 | 2015-04-09 | 株式会社東芝 | 有機分子メモリ |
US9142562B2 (en) | 2013-02-21 | 2015-09-22 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device |
US9209263B2 (en) | 2014-03-17 | 2015-12-08 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
US9231114B2 (en) | 2013-02-21 | 2016-01-05 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device |
US9276216B2 (en) | 2013-09-10 | 2016-03-01 | Kabushiki Kaisha Toshiba | Organic molecular device |
US9412944B2 (en) | 2014-09-22 | 2016-08-09 | Kabushiki Kaisha Toshiba | Organic molecular memory |
US9412943B2 (en) | 2014-09-19 | 2016-08-09 | Kabushiki Kaisha Toshiba | Organic molecular memory |
US9548373B2 (en) | 2014-09-19 | 2017-01-17 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device |
KR20170103867A (ko) * | 2015-01-07 | 2017-09-13 | 메르크 파텐트 게엠베하 | 전자 부품 |
US10032788B2 (en) | 2015-03-24 | 2018-07-24 | Toshiba Memory Corporation | Semiconductor memory device |
US10559627B2 (en) | 2017-03-22 | 2020-02-11 | Toshiba Memory Corporation | Memory device and rectifier |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013115388A (ja) * | 2011-11-30 | 2013-06-10 | Toshiba Corp | 有機分子メモリおよび有機分子メモリ用有機分子 |
US8890234B2 (en) | 2012-09-05 | 2014-11-18 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device |
EP2840622B1 (en) | 2013-08-19 | 2019-02-13 | Novaled GmbH | Electronic or optoelectronic device comprising an anchored thin molecular layer, process for its preparation and compound used therein |
DE102017005884A1 (de) | 2016-07-07 | 2018-01-11 | Merck Patent Gmbh | Elektronisches Schaltelement |
CN107134526B (zh) * | 2017-06-22 | 2019-10-25 | 南京工业大学 | 一种具有普适性的非易失性一次写入多次读取存储器及其制备方法 |
CN107681050A (zh) * | 2017-09-29 | 2018-02-09 | 浙江师范大学 | 一种阻变存储器的制备方法 |
DE102018004733A1 (de) | 2018-06-14 | 2019-12-19 | Merck Patent Gmbh | Verfahren zur Herstellung eines elektronischen Bauteils enthaltend eine selbstorganisierte Monolage |
CN109309157A (zh) * | 2018-09-11 | 2019-02-05 | 西南交通大学 | 一种基于香菇粉末的柔性生物忆阻器的制备方法 |
CN113812003A (zh) | 2019-05-09 | 2021-12-17 | 默克专利有限公司 | 芳族化合物 |
US20220209150A1 (en) | 2019-05-09 | 2022-06-30 | Merck Patent Gmbh | Diamondoid compounds |
EP3813132A1 (en) | 2019-10-21 | 2021-04-28 | Merck Patent GmbH | Electronic switching device |
CN114616686A (zh) | 2019-10-29 | 2022-06-10 | 默克专利有限公司 | 制造分子层的方法和包含其的电子组件 |
EP4174077A1 (en) | 2021-10-27 | 2023-05-03 | Merck Patent GmbH | Electronic switching device |
TW202347336A (zh) | 2022-03-16 | 2023-12-01 | 德商馬克專利公司 | 電子切換裝置 |
IL300665A (en) | 2022-03-16 | 2023-10-01 | Merck Patent Gmbh | Electronic switching device |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004064062A (ja) * | 2002-06-07 | 2004-02-26 | Mitsubishi Chemicals Corp | 情報記憶デバイスと、この情報記憶デバイスを用いた情報記憶・再生方法 |
JP2004311792A (ja) * | 2003-04-08 | 2004-11-04 | Japan Science & Technology Agency | 金属接触電位差メモリー |
JP2004537845A (ja) * | 2001-03-21 | 2004-12-16 | ヒューレット・パッカード・カンパニー | 保護障壁層を有する分子電子デバイスを形成するためのシステムおよび方法 |
JP2005136324A (ja) * | 2003-10-31 | 2005-05-26 | Osaka Kyoiku Univ | 不揮発性メモリ及び消去方法 |
JP2007538409A (ja) * | 2004-05-18 | 2007-12-27 | ヒューレット−パッカード デベロップメント カンパニー エル.ピー. | 電界によって引き起こされる分子内電荷移動もしくは分子間電荷移動または分子と電極との間での電荷移動によって電子的な切替をもたらす組成物 |
JP2008021685A (ja) * | 2006-07-10 | 2008-01-31 | Japan Science & Technology Agency | 分子素子 |
JP2008053631A (ja) * | 2006-08-28 | 2008-03-06 | Toyota Motor Corp | 電気化学活性を有する有機薄膜、その製造方法、およびそれを用いた素子 |
JP2008514032A (ja) * | 2004-09-21 | 2008-05-01 | ヒューレット−パッカード デベロップメント カンパニー エル.ピー. | 電界で分極される材料 |
JP2008532310A (ja) * | 2005-03-02 | 2008-08-14 | エージェンシー フォー サイエンス、テクノロジー アンド リサーチ | 分子電子素子のための複合有機分子 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3169618B2 (ja) | 1989-12-27 | 2001-05-28 | 日本石油化学株式会社 | 電気素子 |
US6674121B2 (en) * | 2001-12-14 | 2004-01-06 | The Regents Of The University Of California | Method and system for molecular charge storage field effect transistor |
US6847541B2 (en) * | 2002-06-07 | 2005-01-25 | Mitsubishi Chemical Corporation | Information storage device, and information storage method and information regeneration method employing the information storage device |
JP2004047791A (ja) * | 2002-07-12 | 2004-02-12 | Pioneer Electronic Corp | 有機薄膜スイッチングメモリ素子及びメモリ装置 |
US6944047B2 (en) * | 2002-12-19 | 2005-09-13 | North Carolina State University | Variable-persistence molecular memory devices and methods of operation thereof |
US7332599B2 (en) * | 2003-06-06 | 2008-02-19 | North Carolina State University | Methods and intermediates for the synthesis of dipyrrin-substituted porphyrinic macrocycles |
CN1849718A (zh) * | 2003-07-09 | 2006-10-18 | 先进微装置公司 | 存储器件和使用及制造该器件的方法 |
DE102004022603A1 (de) | 2004-05-07 | 2005-12-15 | Infineon Technologies Ag | Ultradünne Dielektrika und deren Anwendung in organischen Feldeffekt-Transistoren |
DE102005018096B3 (de) * | 2005-04-19 | 2007-01-11 | Infineon Technologies Ag | Herstellungsverfahren für ein nichtflüchtiges Speicherelement basierend auf zwei stabilen Widerstandszuständen in organischen Molekülen |
FR2889620B1 (fr) * | 2005-08-02 | 2007-11-30 | Commissariat Energie Atomique | Polyoxometallates dans des dispositifs de memoire |
JP2007093991A (ja) | 2005-09-28 | 2007-04-12 | Seiko Epson Corp | 表面の改質方法、基板の製造方法および電子装置の製造方法 |
JP2008021814A (ja) | 2006-07-13 | 2008-01-31 | Hitachi Ltd | 電界効果トランジスタ、有機薄膜トランジスタおよび有機トランジスタの製造方法 |
JP5022950B2 (ja) | 2008-03-07 | 2012-09-12 | 株式会社日立製作所 | 有機薄膜トランジスタおよびその製造方法 |
JP2009267209A (ja) | 2008-04-28 | 2009-11-12 | Sony Corp | 三次元集積回路装置の製造方法および三次元集積回路装置 |
JP5390554B2 (ja) * | 2011-03-24 | 2014-01-15 | 株式会社東芝 | 有機分子メモリ |
JP2013115388A (ja) * | 2011-11-30 | 2013-06-10 | Toshiba Corp | 有機分子メモリおよび有機分子メモリ用有機分子 |
-
2011
- 2011-03-24 JP JP2011065294A patent/JP5717490B2/ja not_active Expired - Fee Related
-
2012
- 2012-03-21 WO PCT/JP2012/001956 patent/WO2012127863A1/en active Application Filing
- 2012-03-21 EP EP12760616.8A patent/EP2689479A4/en not_active Withdrawn
- 2012-03-21 CN CN201280009970.7A patent/CN103403905B/zh not_active Expired - Fee Related
- 2012-03-22 TW TW101109862A patent/TWI528366B/zh not_active IP Right Cessation
-
2013
- 2013-09-10 US US14/022,756 patent/US9054324B2/en not_active Expired - Fee Related
-
2015
- 2015-05-04 US US14/703,075 patent/US9515195B2/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004537845A (ja) * | 2001-03-21 | 2004-12-16 | ヒューレット・パッカード・カンパニー | 保護障壁層を有する分子電子デバイスを形成するためのシステムおよび方法 |
JP2004064062A (ja) * | 2002-06-07 | 2004-02-26 | Mitsubishi Chemicals Corp | 情報記憶デバイスと、この情報記憶デバイスを用いた情報記憶・再生方法 |
JP2004311792A (ja) * | 2003-04-08 | 2004-11-04 | Japan Science & Technology Agency | 金属接触電位差メモリー |
JP2005136324A (ja) * | 2003-10-31 | 2005-05-26 | Osaka Kyoiku Univ | 不揮発性メモリ及び消去方法 |
JP2007538409A (ja) * | 2004-05-18 | 2007-12-27 | ヒューレット−パッカード デベロップメント カンパニー エル.ピー. | 電界によって引き起こされる分子内電荷移動もしくは分子間電荷移動または分子と電極との間での電荷移動によって電子的な切替をもたらす組成物 |
JP2008514032A (ja) * | 2004-09-21 | 2008-05-01 | ヒューレット−パッカード デベロップメント カンパニー エル.ピー. | 電界で分極される材料 |
JP2008532310A (ja) * | 2005-03-02 | 2008-08-14 | エージェンシー フォー サイエンス、テクノロジー アンド リサーチ | 分子電子素子のための複合有機分子 |
JP2008021685A (ja) * | 2006-07-10 | 2008-01-31 | Japan Science & Technology Agency | 分子素子 |
JP2008053631A (ja) * | 2006-08-28 | 2008-03-06 | Toyota Motor Corp | 電気化学活性を有する有機薄膜、その製造方法、およびそれを用いた素子 |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9142562B2 (en) | 2013-02-21 | 2015-09-22 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device |
US9231114B2 (en) | 2013-02-21 | 2016-01-05 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device |
US9245969B2 (en) | 2013-02-21 | 2016-01-26 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device |
US9276216B2 (en) | 2013-09-10 | 2016-03-01 | Kabushiki Kaisha Toshiba | Organic molecular device |
JP2015065220A (ja) * | 2013-09-24 | 2015-04-09 | 株式会社東芝 | 有機分子メモリ |
US9263687B2 (en) | 2013-09-24 | 2016-02-16 | Kabushiki Kaisha Toshiba | Organic molecular memory |
US9543536B2 (en) | 2013-09-24 | 2017-01-10 | Kabushiki Kaisha Toshiba | Organic molecular memory |
US9209263B2 (en) | 2014-03-17 | 2015-12-08 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
US9412943B2 (en) | 2014-09-19 | 2016-08-09 | Kabushiki Kaisha Toshiba | Organic molecular memory |
US9548373B2 (en) | 2014-09-19 | 2017-01-17 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device |
US9412944B2 (en) | 2014-09-22 | 2016-08-09 | Kabushiki Kaisha Toshiba | Organic molecular memory |
KR20170103867A (ko) * | 2015-01-07 | 2017-09-13 | 메르크 파텐트 게엠베하 | 전자 부품 |
US10741778B2 (en) | 2015-01-07 | 2020-08-11 | Merck Patent Gmbh | Electronic component including molecular layer |
KR102489823B1 (ko) * | 2015-01-07 | 2023-01-19 | 메르크 파텐트 게엠베하 | 전자 부품 |
US10032788B2 (en) | 2015-03-24 | 2018-07-24 | Toshiba Memory Corporation | Semiconductor memory device |
US10559627B2 (en) | 2017-03-22 | 2020-02-11 | Toshiba Memory Corporation | Memory device and rectifier |
Also Published As
Publication number | Publication date |
---|---|
US20140008601A1 (en) | 2014-01-09 |
EP2689479A1 (en) | 2014-01-29 |
CN103403905B (zh) | 2016-05-04 |
CN103403905A (zh) | 2013-11-20 |
JP5717490B2 (ja) | 2015-05-13 |
EP2689479A4 (en) | 2016-07-13 |
US9054324B2 (en) | 2015-06-09 |
TW201301284A (zh) | 2013-01-01 |
TWI528366B (zh) | 2016-04-01 |
US20150236171A1 (en) | 2015-08-20 |
US9515195B2 (en) | 2016-12-06 |
WO2012127863A1 (en) | 2012-09-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5717490B2 (ja) | 有機分子メモリ | |
JP5390554B2 (ja) | 有機分子メモリ | |
Mantooth et al. | Fabrication, assembly, and characterization of molecular electronic components | |
Sharma et al. | Roadmap for ferroelectric domain wall nanoelectronics | |
CA2377671C (en) | High density non-volatile memory device | |
Fan et al. | Charge transport through self-assembled monolayers of compounds of interest in molecular electronics | |
JP5674520B2 (ja) | 有機分子メモリの製造方法 | |
Zhou et al. | Solution processed molecular floating gate for flexible flash memories | |
Wang et al. | Nonvolatile transistor memory with self-assembled semiconducting polymer nanodomain floating gates | |
Mukherjee et al. | High-performance molecular memory device using Ag− TCNQ crystals grown by solution process | |
Ouyang | Application of nanomaterials in two-terminal resistive-switching memory devices | |
Li et al. | Inserting thienyl linkers into conjugated molecules for efficient multilevel electronic memory: a new understanding of charge‐trapping in organic materials | |
Scheuerer et al. | Manipulating and Probing the Distribution of Excess Electrons in an Electrically Isolated Self-Assembled Molecular Structure | |
Fu et al. | Ferroelectric gated electrical transport in CdS nanotetrapods | |
US9412944B2 (en) | Organic molecular memory | |
Metzger | Unimolecular electronics: Results and prospects | |
Xia et al. | Effects of molecular combination and side groups for thiophene-benzene-based nanodevices | |
Yuan et al. | Effects of electrodes and nitrogen-atom locations on electron transport in C59N molecular junctions: a first-principles study | |
JP2015111737A (ja) | 有機分子メモリ | |
Vuillaume | Molecular Electronics: Electron | |
Abbaszadeh et al. | Electron transport properties of boron nitride fullerene B 24 N 24 doped with lithium atom: first-principles calculations | |
JP5739042B2 (ja) | 有機分子メモリ | |
Costa Milán | Experimental study of electronic transport in single molecular contacts and surface modification via STM | |
Zimbovskaya et al. | Nanoelectronic Applications of Molecular Junctions | |
Lu et al. | Donor–Acceptor Organic Molecule Resistor Switching Memory Devices |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130218 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140415 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140616 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20141028 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20141208 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150217 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150317 |
|
LAPS | Cancellation because of no payment of annual fees |