JP2012174682A5 - - Google Patents

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Publication number
JP2012174682A5
JP2012174682A5 JP2011161940A JP2011161940A JP2012174682A5 JP 2012174682 A5 JP2012174682 A5 JP 2012174682A5 JP 2011161940 A JP2011161940 A JP 2011161940A JP 2011161940 A JP2011161940 A JP 2011161940A JP 2012174682 A5 JP2012174682 A5 JP 2012174682A5
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JP
Japan
Prior art keywords
chamber
plasma processing
processing apparatus
electrode
gas
Prior art date
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Granted
Application number
JP2011161940A
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English (en)
Japanese (ja)
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JP2012174682A (ja
JP6144453B2 (ja
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Publication date
Priority claimed from KR1020110014327A external-priority patent/KR101839776B1/ko
Application filed filed Critical
Publication of JP2012174682A publication Critical patent/JP2012174682A/ja
Publication of JP2012174682A5 publication Critical patent/JP2012174682A5/ja
Application granted granted Critical
Publication of JP6144453B2 publication Critical patent/JP6144453B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2011161940A 2011-02-18 2011-07-25 プラズマ処理装置 Expired - Fee Related JP6144453B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110014327A KR101839776B1 (ko) 2011-02-18 2011-02-18 플라즈마 처리장치
KR10-2011-0014327 2011-02-18

Publications (3)

Publication Number Publication Date
JP2012174682A JP2012174682A (ja) 2012-09-10
JP2012174682A5 true JP2012174682A5 (enrdf_load_stackoverflow) 2014-09-04
JP6144453B2 JP6144453B2 (ja) 2017-06-07

Family

ID=46885636

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011161940A Expired - Fee Related JP6144453B2 (ja) 2011-02-18 2011-07-25 プラズマ処理装置

Country Status (2)

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JP (1) JP6144453B2 (enrdf_load_stackoverflow)
KR (1) KR101839776B1 (enrdf_load_stackoverflow)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101932169B1 (ko) 2012-03-23 2018-12-27 삼성디스플레이 주식회사 기판 처리 장치 및 방법
JP6207880B2 (ja) * 2012-09-26 2017-10-04 東芝メモリ株式会社 プラズマ処理装置およびプラズマ処理方法
CN108630511B (zh) * 2017-03-17 2020-10-13 北京北方华创微电子装备有限公司 下电极装置及半导体加工设备
JP6611750B2 (ja) * 2017-03-30 2019-11-27 富士フイルム株式会社 プラズマ生成装置
CN114373669B (zh) 2017-06-27 2024-09-17 佳能安内华股份有限公司 等离子体处理装置
EP3648552B1 (en) 2017-06-27 2022-04-13 Canon Anelva Corporation Plasma treatment device
TWI693862B (zh) * 2017-06-27 2020-05-11 日商佳能安內華股份有限公司 電漿處理裝置
WO2019004184A1 (ja) * 2017-06-27 2019-01-03 キヤノンアネルバ株式会社 プラズマ処理装置
WO2019004185A1 (ja) * 2017-06-27 2019-01-03 キヤノンアネルバ株式会社 プラズマ処理装置
SG11201912564VA (en) 2017-06-27 2020-01-30 Canon Anelva Corp Plasma processing apparatus
EP3648550B1 (en) 2017-06-27 2021-06-02 Canon Anelva Corporation Plasma treatment device
JP6656480B2 (ja) * 2017-06-27 2020-03-04 キヤノンアネルバ株式会社 プラズマ処理装置および方法
PL3817517T3 (pl) * 2018-06-26 2024-10-28 Canon Anelva Corporation Urządzenie do obróbki plazmą, sposób obróbki plazmą, program oraz nośnik pamięci

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60178633A (ja) * 1984-02-27 1985-09-12 Hitachi Ltd ドライエツチング装置
JPH0314228A (ja) * 1989-06-13 1991-01-22 Nec Corp プラズマ処理装置
US5731364A (en) * 1996-01-24 1998-03-24 Shipley Company, L.L.C. Photoimageable compositions comprising multiple arylsulfonium photoactive compounds
JP4585648B2 (ja) * 1999-09-03 2010-11-24 株式会社アルバック プラズマ処理装置
JP2003524895A (ja) * 2000-02-25 2003-08-19 東京エレクトロン株式会社 容量性プラズマ源に係るマルチゾーンｒｆ電極
WO2001076326A1 (en) * 2000-03-30 2001-10-11 Tokyo Electron Limited Optical monitoring and control system and method for plasma reactors
JP2002009043A (ja) * 2000-06-23 2002-01-11 Hitachi Ltd エッチング装置及びそれを用いた半導体装置の製造方法
JP2002359232A (ja) * 2001-05-31 2002-12-13 Tokyo Electron Ltd プラズマ処理装置
US20050031796A1 (en) * 2003-08-07 2005-02-10 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for controlling spatial distribution of RF power and plasma density
CH706979B1 (en) * 2004-04-30 2014-03-31 Tel Solar Ag Method for producing a disc-shaped workpiece based on a dielectric substrate and vacuum treatment plant therefor.
JP4289246B2 (ja) * 2004-07-21 2009-07-01 富士電機システムズ株式会社 薄膜形成装置
JP2006331740A (ja) * 2005-05-24 2006-12-07 Sharp Corp プラズマプロセス装置
JP4935149B2 (ja) * 2006-03-30 2012-05-23 東京エレクトロン株式会社 プラズマ処理用の電極板及びプラズマ処理装置
JP5294669B2 (ja) * 2008-03-25 2013-09-18 東京エレクトロン株式会社 プラズマ処理装置
JP2010238730A (ja) * 2009-03-30 2010-10-21 Tokyo Electron Ltd プラズマ処理装置
JP5350043B2 (ja) * 2009-03-31 2013-11-27 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

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