KR101839776B1 - 플라즈마 처리장치 - Google Patents

플라즈마 처리장치 Download PDF

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Publication number
KR101839776B1
KR101839776B1 KR1020110014327A KR20110014327A KR101839776B1 KR 101839776 B1 KR101839776 B1 KR 101839776B1 KR 1020110014327 A KR1020110014327 A KR 1020110014327A KR 20110014327 A KR20110014327 A KR 20110014327A KR 101839776 B1 KR101839776 B1 KR 101839776B1
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KR
South Korea
Prior art keywords
electrode
plasma
chamber
capacitor
gas
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KR1020110014327A
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English (en)
Korean (ko)
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KR20120094980A (ko
Inventor
타카유키 후카사와
Original Assignee
삼성디스플레이 주식회사
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Priority to KR1020110014327A priority Critical patent/KR101839776B1/ko
Priority to JP2011161940A priority patent/JP6144453B2/ja
Publication of KR20120094980A publication Critical patent/KR20120094980A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32825—Working under atmospheric pressure or higher
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/466—Radiofrequency discharges using capacitive coupling means, e.g. electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020110014327A 2011-02-18 2011-02-18 플라즈마 처리장치 Expired - Fee Related KR101839776B1 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020110014327A KR101839776B1 (ko) 2011-02-18 2011-02-18 플라즈마 처리장치
JP2011161940A JP6144453B2 (ja) 2011-02-18 2011-07-25 プラズマ処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110014327A KR101839776B1 (ko) 2011-02-18 2011-02-18 플라즈마 처리장치

Publications (2)

Publication Number Publication Date
KR20120094980A KR20120094980A (ko) 2012-08-28
KR101839776B1 true KR101839776B1 (ko) 2018-03-20

Family

ID=46885636

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110014327A Expired - Fee Related KR101839776B1 (ko) 2011-02-18 2011-02-18 플라즈마 처리장치

Country Status (2)

Country Link
JP (1) JP6144453B2 (enrdf_load_stackoverflow)
KR (1) KR101839776B1 (enrdf_load_stackoverflow)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101932169B1 (ko) 2012-03-23 2018-12-27 삼성디스플레이 주식회사 기판 처리 장치 및 방법
JP6207880B2 (ja) * 2012-09-26 2017-10-04 東芝メモリ株式会社 プラズマ処理装置およびプラズマ処理方法
CN108630511B (zh) * 2017-03-17 2020-10-13 北京北方华创微电子装备有限公司 下电极装置及半导体加工设备
JP6611750B2 (ja) * 2017-03-30 2019-11-27 富士フイルム株式会社 プラズマ生成装置
CN114373669B (zh) 2017-06-27 2024-09-17 佳能安内华股份有限公司 等离子体处理装置
EP3648552B1 (en) 2017-06-27 2022-04-13 Canon Anelva Corporation Plasma treatment device
TWI693862B (zh) * 2017-06-27 2020-05-11 日商佳能安內華股份有限公司 電漿處理裝置
WO2019004184A1 (ja) * 2017-06-27 2019-01-03 キヤノンアネルバ株式会社 プラズマ処理装置
WO2019004185A1 (ja) * 2017-06-27 2019-01-03 キヤノンアネルバ株式会社 プラズマ処理装置
SG11201912564VA (en) 2017-06-27 2020-01-30 Canon Anelva Corp Plasma processing apparatus
EP3648550B1 (en) 2017-06-27 2021-06-02 Canon Anelva Corporation Plasma treatment device
JP6656480B2 (ja) * 2017-06-27 2020-03-04 キヤノンアネルバ株式会社 プラズマ処理装置および方法
PL3817517T3 (pl) * 2018-06-26 2024-10-28 Canon Anelva Corporation Urządzenie do obróbki plazmą, sposób obróbki plazmą, program oraz nośnik pamięci

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001140085A (ja) * 1999-09-03 2001-05-22 Ulvac Japan Ltd プラズマ処理装置
JP2002359232A (ja) * 2001-05-31 2002-12-13 Tokyo Electron Ltd プラズマ処理装置
JP2006331740A (ja) * 2005-05-24 2006-12-07 Sharp Corp プラズマプロセス装置
JP2007273596A (ja) * 2006-03-30 2007-10-18 Tokyo Electron Ltd プラズマ処理用の電極板及びプラズマ処理装置
JP2007535789A (ja) * 2004-04-30 2007-12-06 オー・ツェー・エリコン・バルザース・アクチェンゲゼルシャフト 誘電体基板に基づいて円板状の加工品を製造する方法、ならびにそのための真空処理設備
JP2010238730A (ja) * 2009-03-30 2010-10-21 Tokyo Electron Ltd プラズマ処理装置
JP2010238980A (ja) * 2009-03-31 2010-10-21 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60178633A (ja) * 1984-02-27 1985-09-12 Hitachi Ltd ドライエツチング装置
JPH0314228A (ja) * 1989-06-13 1991-01-22 Nec Corp プラズマ処理装置
US5731364A (en) * 1996-01-24 1998-03-24 Shipley Company, L.L.C. Photoimageable compositions comprising multiple arylsulfonium photoactive compounds
JP2003524895A (ja) * 2000-02-25 2003-08-19 東京エレクトロン株式会社 容量性プラズマ源に係るマルチゾーンｒｆ電極
WO2001076326A1 (en) * 2000-03-30 2001-10-11 Tokyo Electron Limited Optical monitoring and control system and method for plasma reactors
JP2002009043A (ja) * 2000-06-23 2002-01-11 Hitachi Ltd エッチング装置及びそれを用いた半導体装置の製造方法
US20050031796A1 (en) * 2003-08-07 2005-02-10 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for controlling spatial distribution of RF power and plasma density
JP4289246B2 (ja) * 2004-07-21 2009-07-01 富士電機システムズ株式会社 薄膜形成装置
JP5294669B2 (ja) * 2008-03-25 2013-09-18 東京エレクトロン株式会社 プラズマ処理装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001140085A (ja) * 1999-09-03 2001-05-22 Ulvac Japan Ltd プラズマ処理装置
JP2002359232A (ja) * 2001-05-31 2002-12-13 Tokyo Electron Ltd プラズマ処理装置
JP2007535789A (ja) * 2004-04-30 2007-12-06 オー・ツェー・エリコン・バルザース・アクチェンゲゼルシャフト 誘電体基板に基づいて円板状の加工品を製造する方法、ならびにそのための真空処理設備
JP2006331740A (ja) * 2005-05-24 2006-12-07 Sharp Corp プラズマプロセス装置
JP2007273596A (ja) * 2006-03-30 2007-10-18 Tokyo Electron Ltd プラズマ処理用の電極板及びプラズマ処理装置
JP2010238730A (ja) * 2009-03-30 2010-10-21 Tokyo Electron Ltd プラズマ処理装置
JP2010238980A (ja) * 2009-03-31 2010-10-21 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法

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JP2012174682A (ja) 2012-09-10
KR20120094980A (ko) 2012-08-28
JP6144453B2 (ja) 2017-06-07

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