|
US4426582A
(en)
*
|
1980-01-21 |
1984-01-17 |
Oregon Graduate Center |
Charged particle beam apparatus and method utilizing liquid metal field ionization source and asymmetric three element lens system
|
|
NL8702570A
(nl)
*
|
1987-10-29 |
1989-05-16 |
Philips Nv |
Geladen deeltjes bundel apparaat.
|
|
US4914305A
(en)
*
|
1989-01-04 |
1990-04-03 |
Eaton Corporation |
Uniform cross section ion beam system
|
|
JPH04155739A
(ja)
*
|
1990-10-19 |
1992-05-28 |
Nippon Telegr & Teleph Corp <Ntt> |
電子ビーム描画装置
|
|
JPH07296755A
(ja)
*
|
1994-04-26 |
1995-11-10 |
Hitachi Ltd |
電子線源およびこれを用いた電子線応用装置
|
|
JP2806281B2
(ja)
*
|
1994-12-19 |
1998-09-30 |
日本電気株式会社 |
可変多角形断面の電子線形成装置およびこれを用いた電子線描画装置
|
|
US5534311A
(en)
*
|
1995-05-31 |
1996-07-09 |
The United States Of America As Represented By The Secretary Of The Navy |
Production of structures by electrostatically-focused deposition
|
|
US5637951A
(en)
|
1995-08-10 |
1997-06-10 |
Ion Diagnostics, Inc. |
Electron source for multibeam electron lithography system
|
|
JP3906549B2
(ja)
*
|
1998-02-19 |
2007-04-18 |
三菱電機株式会社 |
液体金属イオンスラスタ
|
|
WO2001039243A1
(en)
|
1999-11-23 |
2001-05-31 |
Ion Diagnostics, Inc. |
Electron optics for multi-beam electron beam lithography tool
|
|
EP1171901B1
(en)
*
|
2000-02-09 |
2008-10-08 |
Fei Company |
Multi-column fib for nanofabrication applications
|
|
WO2001060456A1
(en)
|
2000-02-19 |
2001-08-23 |
Ion Diagnostics, Inc. |
Multi-beam multi-column electron beam inspection system
|
|
US6734428B2
(en)
|
2000-02-19 |
2004-05-11 |
Multibeam Systems, Inc. |
Multi-beam multi-column electron beam inspection system
|
|
US6943351B2
(en)
|
2000-02-19 |
2005-09-13 |
Multibeam Systems, Inc. |
Multi-column charged particle optics assembly
|
|
JP2002141009A
(ja)
*
|
2000-11-02 |
2002-05-17 |
Nikon Corp |
電子線装置及びその電子線装置を用いたデバイスの製造方法
|
|
GB2374979A
(en)
*
|
2000-12-28 |
2002-10-30 |
Ims Ionen Mikrofab Syst |
A field ionisation source
|
|
EP1249855B1
(en)
*
|
2001-04-09 |
2008-07-09 |
ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH |
Device and method for controlling focussed electron beams
|
|
WO2002086804A1
(en)
|
2001-04-18 |
2002-10-31 |
Multibeam Systems, Inc. |
Image processing system for multi-beam inspection
|
|
US7012266B2
(en)
*
|
2002-08-23 |
2006-03-14 |
Samsung Electronics Co., Ltd. |
MEMS-based two-dimensional e-beam nano lithography device and method for making the same
|
|
US6894435B2
(en)
*
|
2002-11-06 |
2005-05-17 |
Applied Materials, Inc. |
Method and device for rastering source redundancy
|
|
JP2005251440A
(ja)
*
|
2004-03-02 |
2005-09-15 |
Ebara Corp |
電子線装置及び該装置を用いたデバイス製造方法
|
|
ATE441202T1
(de)
*
|
2004-05-17 |
2009-09-15 |
Mapper Lithography Ip Bv |
Belichtungssystem mit einem geladenen teilchenstrahl
|
|
US7456402B2
(en)
|
2004-09-10 |
2008-11-25 |
Multibeam Systems, Inc. |
Detector optics for multiple electron beam test system
|
|
EP1943661B1
(en)
*
|
2005-09-06 |
2012-02-08 |
Carl Zeiss SMT GmbH |
Charged particle inspection method and charged particle system
|
|
US7609815B2
(en)
*
|
2006-06-01 |
2009-10-27 |
The Regents Of The University Of California |
High brightness—multiple beamlets source for patterned X-ray production
|
|
JP2008053003A
(ja)
*
|
2006-08-23 |
2008-03-06 |
Sii Nanotechnology Inc |
集束イオンビーム装置及び試料の加工方法
|
|
WO2010109454A1
(en)
*
|
2009-03-23 |
2010-09-30 |
El-Mul Technologies, Ltd. |
Nanotube-based electron emission device and method for fabrication thereof
|
|
US8253118B2
(en)
|
2009-10-14 |
2012-08-28 |
Fei Company |
Charged particle beam system having multiple user-selectable operating modes
|