JP2012099566A - 半導体装置、配線基板付き裏面電極型太陽電池セル、太陽電池モジュールおよび半導体装置の製造方法 - Google Patents
半導体装置、配線基板付き裏面電極型太陽電池セル、太陽電池モジュールおよび半導体装置の製造方法 Download PDFInfo
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- JP2012099566A JP2012099566A JP2010244316A JP2010244316A JP2012099566A JP 2012099566 A JP2012099566 A JP 2012099566A JP 2010244316 A JP2010244316 A JP 2010244316A JP 2010244316 A JP2010244316 A JP 2010244316A JP 2012099566 A JP2012099566 A JP 2012099566A
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Classifications
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Abstract
【解決手段】第1の絶縁性接着材が極性の異なる電極間の半導体基板の表面領域と隣り合う配線間の絶縁性基材の表面領域との間に配置され、第2の絶縁性接着材が第1の絶縁性接着材と導電性接着材との間に配置されており、第1の絶縁性接着材は、第1の硬化状態となった後に軟化状態となってその後第2の硬化状態となる性質を有し、第1の絶縁性接着材が第2の硬化状態となるまで第1の絶縁性接着材の粘度を第2の絶縁性接着材の粘度よりも高くして製造される半導体装置とその製造方法である。
【選択図】図1
Description
(1)裏面電極型太陽電池セルをSn−Bi半田槽に浸漬して電極部分を半田コートする工程。
(2)スクリーン印刷によりアクリル系粘着剤を裏面電極型太陽電池セルの裏面の電極以外の部分に塗布する工程。
(3)配線基板上に裏面電極型太陽電池セルを設置する工程。
(4)裏面電極型太陽電池セルと配線基板とを加熱圧着する工程。
図1に、本発明の半導体装置の一例である本実施の形態の配線基板付き裏面電極型太陽電池セルの模式的な断面図を示す。図1に示すように、配線基板付き裏面電極型太陽電池セルは、裏面電極型太陽電池セル8と、配線基板10と、を含んでいる。
裏面電極型太陽電池セル8としては、たとえば以下のようにして製造した裏面電極型太陽電池セル8を用いることができる。以下、図2(a)〜(g)の模式的断面図を参照して、本実施の形態で用いられる裏面電極型太陽電池セル8の製造方法の一例について説明する。
図6に、本実施の形態で用いられる配線基板の一例を配線の設置側から見たときの一例の模式的な平面図を示す。図6に示すように、配線基板10は、絶縁性基材11と、絶縁性基材11の表面上に設置されたn型用配線12、p型用配線13および接続用配線14を含む配線16とを有している。
<配線基板付き裏面電極型太陽電池セルの製造方法>
図8(a)〜図8(h)に、本実施の形態の配線基板付き裏面電極型太陽電池セルの製造方法の一例を図解する模式的な断面図を示す。以下、図8(a)〜図8(h)を参照して、本実施の形態の配線基板付き裏面電極型太陽電池セルの製造方法の一例について説明する。
まず、図8(a)に示すように、上記のようにして製造した裏面電極型太陽電池セル8を用意する。次に、図8(b)に示すように、裏面電極型太陽電池セル8の半導体基板1の裏面のn型用電極6とp型用電極7との間に、それぞれ、未硬化状態の第1の絶縁性接着材22aを設置する。
次に、図8(c)に示すように、未硬化状態の第1の絶縁性接着材22aの粘度を上昇させることによって、第1の硬化状態の第1の絶縁性接着材22bとする。第1の硬化状態の第1の絶縁性接着材22bは、未硬化状態の第1の絶縁性接着材22aにエネルギを供給することにより形成される。
次に、図8(d)に示すように、裏面電極型太陽電池セル8の半導体基板1の裏面のn型用電極6およびp型用電極7のそれぞれの表面に半田樹脂20を設置する。半田樹脂20は、導電性接着材21と、第2の絶縁性接着材23と、を含んでおり、第2の絶縁性接着材23中に導電性接着材21が分散した構成を有している。
次に、図8(e)に示すように、裏面電極型太陽電池セル8と配線基板10とを重ね合わせる。
次に、図8(f)に示すように、第1の硬化状態の第1の絶縁性接着材22bの粘度を低下させて軟化状態の第1の絶縁性接着材22cとする。
次に、図8(g)に示すように、半田樹脂20中の固体状態の導電性接着材21を溶融して溶融状態の導電性接着材21aとする。固体状態の導電性接着材21を溶融する方法としては、たとえば、導電性接着材21を加熱する方法などを用いることができる。
その後、図8(h)に示すように、軟化状態の第1の絶縁性接着材22cの粘度を上昇させて第2の硬化状態の第1の絶縁性接着材22とする。なお、第2の硬化状態についての説明は上記と同様であるため、ここではその説明については省略する。
上記のようにして作製された配線基板付き裏面電極型太陽電池セルは、たとえば図15の模式的断面図に示すように、表面保護材17と裏面保護材19との間の封止材18中に封止されることにより太陽電池モジュールが作製される。
Claims (12)
- 一方の表面に極性の異なる電極が設けられた半導体基板と、
絶縁性基材の一方の表面に配線が設けられた配線基板と、
前記半導体基板と前記絶縁性基材との間に設けられた第1の絶縁性接着材および第2の絶縁性接着材と、
前記電極と前記配線との間に設けられた導電性接着材と、を含み、
前記第1の絶縁性接着材は、極性の異なる前記電極間の前記半導体基板の表面領域と、隣り合う前記配線間の前記絶縁性基材の表面領域と、の間に配置され、
前記第2の絶縁性接着材は、前記第1の絶縁性接着材と、前記導電性接着材と、の間に配置されており、
前記第1の絶縁性接着材は、未硬化の状態にエネルギが供給されることにより、前記未硬化の状態から粘度が上昇して第1の硬化状態となった後に、前記第1の硬化状態から粘度が一旦低下して軟化状態となり、その後粘度が再度上昇して前記第1の硬化状態よりも粘度が高い状態である第2の硬化状態となる性質を有し、
前記第2の絶縁性接着材は、未硬化の状態にエネルギが供給されることにより、前記未硬化の状態から粘度が上昇して硬化状態となる性質を有している、半導体装置。 - 前記第1の硬化状態は、常温における未硬化状態と比べて粘度が高く、形状保持性を有しており、かつ接着性の低い状態であり、
前記第2の硬化状態は、前記第1の硬化状態の前記第1の絶縁性接着材の粘度が一旦低下した後に再度上昇することによって接着可能となる状態である、請求項1に記載の半導体装置。 - 前記導電性接着材は、前記第1の硬化状態の前記第1の絶縁性接着材の粘度が低下し始める温度よりも高い融点を有している、請求項1または2に記載の半導体装置。
- 前記第2の硬化状態の前記第1の絶縁性接着材は白色である、請求項1から3のいずれかに記載の半導体装置。
- 一方の表面に極性の異なる電極が設けられた半導体基板の前記電極間の表面領域および絶縁性基材の一方の表面に配線が設けられた配線基板の隣り合う前記配線間の前記絶縁性基材の表面領域の少なくとも一方に第1の絶縁性接着材を設置する工程と、
前記第1の絶縁性接着材の粘度を上昇させて第1の硬化状態とする工程と、
前記電極の表面および前記配線の表面の少なくとも一方に導電性接着材を含む第2の絶縁性接着材を設置する工程と、
前記半導体基板の前記電極と前記配線基板の前記配線とが対向するように前記半導体基板と前記配線基板とを重ね合わせる工程と、
前記第1の硬化状態の前記第1の絶縁性接着材の粘度を低下させて軟化状態とする工程と、
前記導電性接着材を溶融させる工程と、
前記軟化状態の前記第1の絶縁性接着材の粘度を上昇させて第2の硬化状態とする工程と、を含み、
前記第2の硬化状態とする工程では、前記第1の絶縁性接着材の粘度を前記第2の絶縁性接着材の粘度よりも高くする、半導体装置の製造方法。 - 前記第1の硬化状態は、常温における未硬化状態と比べて粘度が高く、形状保持性を有しており、かつ接着性の低い状態であり、
前記第2の硬化状態は、前記第1の硬化状態の前記第1の絶縁性接着材の粘度が一旦低下した後に再度上昇することによって接着可能となる状態である、請求項5に記載の半導体装置の製造方法。 - 前記軟化状態とする工程と、前記溶融させる工程と、前記第2の硬化状態とする工程とは、1回の加熱工程で行なわれる、請求項5または6に記載の半導体装置の製造方法。
- 前記導電性接着材は、前記第1の硬化状態の前記第1の絶縁性接着材の粘度が低下し始める温度よりも高い融点を有している、請求項5から7のいずれかに記載の半導体装置の製造方法。
- 前記第2の硬化状態の前記第1の絶縁性接着材は白色である、請求項5から8のいずれかに記載の半導体装置の製造方法。
- 前記第1の絶縁性接着材を設置する工程において、前記第1の絶縁性接着材は、前記半導体基板の前記電極と前記半導体基板の周縁部との間に設置される、請求項5から9のいずれかに記載の半導体装置の製造方法。
- 前記第1の絶縁性接着材は、前記半導体基板の前記電極と前記半導体基板の前記周縁部との間に、前記半導体基板と前記配線基板との位置合わせを行なうための位置合わせパターンを形成するように設置される、請求項10に記載の半導体装置の製造方法。
- 前記配線基板には前記第1の絶縁性接着材の前記位置合わせパターンに対応する位置合わせパターンが設けられており、
前記重ね合わせる工程は、前記半導体基板に設けられた前記第1の絶縁性接着材の前記位置合わせパターンと前記配線基板の前記位置合わせパターンとが重なるように位置合わせをする工程を含む、請求項11に記載の半導体装置の製造方法。
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