JP2012069635A - 成膜装置、ウェハホルダ及び成膜方法 - Google Patents

成膜装置、ウェハホルダ及び成膜方法 Download PDF

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Publication number
JP2012069635A
JP2012069635A JP2010211878A JP2010211878A JP2012069635A JP 2012069635 A JP2012069635 A JP 2012069635A JP 2010211878 A JP2010211878 A JP 2010211878A JP 2010211878 A JP2010211878 A JP 2010211878A JP 2012069635 A JP2012069635 A JP 2012069635A
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JP
Japan
Prior art keywords
wafer
gas
wafer holder
boat
holder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010211878A
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English (en)
Japanese (ja)
Other versions
JP2012069635A5 (enExample
Inventor
Daisuke Hara
大介 原
Norihiro Niimura
憲弘 新村
Masasue Murobayashi
正季 室林
志有 ▲ひろ▼地
Shiyu Hirochi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Denki Electric Inc
Original Assignee
Hitachi Kokusai Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Kokusai Electric Inc filed Critical Hitachi Kokusai Electric Inc
Priority to JP2010211878A priority Critical patent/JP2012069635A/ja
Priority to US13/036,304 priority patent/US20120067274A1/en
Publication of JP2012069635A publication Critical patent/JP2012069635A/ja
Publication of JP2012069635A5 publication Critical patent/JP2012069635A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
JP2010211878A 2010-09-22 2010-09-22 成膜装置、ウェハホルダ及び成膜方法 Pending JP2012069635A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2010211878A JP2012069635A (ja) 2010-09-22 2010-09-22 成膜装置、ウェハホルダ及び成膜方法
US13/036,304 US20120067274A1 (en) 2010-09-22 2011-02-28 Film forming apparatus, wafer holder, and film forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010211878A JP2012069635A (ja) 2010-09-22 2010-09-22 成膜装置、ウェハホルダ及び成膜方法

Publications (2)

Publication Number Publication Date
JP2012069635A true JP2012069635A (ja) 2012-04-05
JP2012069635A5 JP2012069635A5 (enExample) 2013-10-31

Family

ID=45816560

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010211878A Pending JP2012069635A (ja) 2010-09-22 2010-09-22 成膜装置、ウェハホルダ及び成膜方法

Country Status (2)

Country Link
US (1) US20120067274A1 (enExample)
JP (1) JP2012069635A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9716010B2 (en) 2013-11-12 2017-07-25 Globalfoundries Inc. Handle wafer
JP2019192688A (ja) * 2018-04-19 2019-10-31 三菱電機株式会社 ウエハボートおよびその製造方法
WO2020158657A1 (ja) * 2019-02-01 2020-08-06 東京エレクトロン株式会社 成膜装置及び成膜方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2727137B1 (en) 2011-06-28 2022-04-20 Brooks Automation (Germany) GmbH Semiconductor stocker systems and methods.
WO2014027472A1 (ja) * 2012-08-17 2014-02-20 株式会社Ihi 耐熱複合材料の製造方法及び製造装置
WO2014191621A1 (en) * 2013-05-29 2014-12-04 Beneq Oy Substrate carrier and arrangement for supporting substrates
CN107210252B (zh) * 2014-11-26 2021-05-25 冯·阿登纳资产股份有限公司 基板保持装置、基板运送装置、处理布置和用于处理基板的方法
US10712005B2 (en) * 2017-07-14 2020-07-14 Goodrich Corporation Ceramic matrix composite manufacturing
US12233433B2 (en) * 2018-04-27 2025-02-25 Raytheon Company Uniform thin film deposition for poly-p-xylylene
US10790466B2 (en) * 2018-12-11 2020-09-29 Feng-wen Yen In-line system for mass production of organic optoelectronic device and manufacturing method using the same system
IT201900015416A1 (it) * 2019-09-03 2021-03-03 St Microelectronics Srl Apparecchio per la crescita di una fetta di materiale semiconduttore, in particolare di carburo di silicio, e procedimento di fabbricazione associato
IT202000028778A1 (it) 2020-11-27 2022-05-27 St Microelectronics Srl Procedimento di fabbricazione di una fetta di sic con controllo dello stress residuo

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002222806A (ja) * 2001-01-26 2002-08-09 Ebara Corp 基板処理装置
JP2004055672A (ja) * 2002-07-17 2004-02-19 Nikko Materials Co Ltd 化学気相成長装置および化学気相成長方法
JP2004172374A (ja) * 2002-11-20 2004-06-17 Shin Etsu Handotai Co Ltd 保持治具、半導体ウェーハの製造装置、半導体基板及び保持治具の搭載方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5262029A (en) * 1988-05-23 1993-11-16 Lam Research Method and system for clamping semiconductor wafers
DE4305750C2 (de) * 1993-02-25 2002-03-21 Unaxis Deutschland Holding Vorrichtung zum Halten von flachen, kreisscheibenförmigen Substraten in der Vakuumkammer einer Beschichtungs- oder Ätzanlage
JPH08153682A (ja) * 1994-11-29 1996-06-11 Nec Corp プラズマｃｖｄ装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002222806A (ja) * 2001-01-26 2002-08-09 Ebara Corp 基板処理装置
JP2004055672A (ja) * 2002-07-17 2004-02-19 Nikko Materials Co Ltd 化学気相成長装置および化学気相成長方法
JP2004172374A (ja) * 2002-11-20 2004-06-17 Shin Etsu Handotai Co Ltd 保持治具、半導体ウェーハの製造装置、半導体基板及び保持治具の搭載方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9716010B2 (en) 2013-11-12 2017-07-25 Globalfoundries Inc. Handle wafer
JP2019192688A (ja) * 2018-04-19 2019-10-31 三菱電機株式会社 ウエハボートおよびその製造方法
JP7030604B2 (ja) 2018-04-19 2022-03-07 三菱電機株式会社 ウエハボートおよびその製造方法
WO2020158657A1 (ja) * 2019-02-01 2020-08-06 東京エレクトロン株式会社 成膜装置及び成膜方法

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