JP2012054470A5 - - Google Patents

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Publication number
JP2012054470A5
JP2012054470A5 JP2010197047A JP2010197047A JP2012054470A5 JP 2012054470 A5 JP2012054470 A5 JP 2012054470A5 JP 2010197047 A JP2010197047 A JP 2010197047A JP 2010197047 A JP2010197047 A JP 2010197047A JP 2012054470 A5 JP2012054470 A5 JP 2012054470A5
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JP
Japan
Prior art keywords
ferromagnetic
ferromagnetic body
layer
mnrh
mnir
Prior art date
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Application number
JP2010197047A
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English (en)
Japanese (ja)
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JP2012054470A (ja
JP5598975B2 (ja
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Publication date
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Priority to JP2010197047A priority Critical patent/JP5598975B2/ja
Priority claimed from JP2010197047A external-priority patent/JP5598975B2/ja
Priority to US13/223,785 priority patent/US8790797B2/en
Publication of JP2012054470A publication Critical patent/JP2012054470A/ja
Publication of JP2012054470A5 publication Critical patent/JP2012054470A5/ja
Application granted granted Critical
Publication of JP5598975B2 publication Critical patent/JP5598975B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2010197047A 2010-09-02 2010-09-02 スピン注入源およびその製造方法 Expired - Fee Related JP5598975B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2010197047A JP5598975B2 (ja) 2010-09-02 2010-09-02 スピン注入源およびその製造方法
US13/223,785 US8790797B2 (en) 2010-09-02 2011-09-01 Spin injection source and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010197047A JP5598975B2 (ja) 2010-09-02 2010-09-02 スピン注入源およびその製造方法

Publications (3)

Publication Number Publication Date
JP2012054470A JP2012054470A (ja) 2012-03-15
JP2012054470A5 true JP2012054470A5 (enExample) 2013-09-19
JP5598975B2 JP5598975B2 (ja) 2014-10-01

Family

ID=45770948

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010197047A Expired - Fee Related JP5598975B2 (ja) 2010-09-02 2010-09-02 スピン注入源およびその製造方法

Country Status (2)

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US (1) US8790797B2 (enExample)
JP (1) JP5598975B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2989833B1 (fr) * 2012-04-18 2014-12-26 Centre Nat Rech Scient Dispositif injecteur de spins comportant une couche de protection en son centre
JP6263344B2 (ja) * 2013-07-26 2018-01-17 株式会社東芝 磁気センサー装置、ハードディスクヘッド、および磁気記録再生装置
US9633678B2 (en) 2015-09-29 2017-04-25 Seagate Technology Llc Data reader with spin filter
US12004355B2 (en) * 2020-10-23 2024-06-04 Samsung Electronics Co., Ltd. Magnetic tunnel junction element and magnetoresistive memory device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4714918B2 (ja) 2002-11-29 2011-07-06 独立行政法人科学技術振興機構 スピン注入素子及びスピン注入素子を用いた磁気装置
JP4029772B2 (ja) 2003-05-16 2008-01-09 株式会社日立製作所 磁気ヘッドおよびそれを用いた磁気記録再生装置
JP3818276B2 (ja) 2003-06-24 2006-09-06 独立行政法人科学技術振興機構 スピン注入素子及びそれを用いた磁気装置
US7598555B1 (en) * 2003-08-22 2009-10-06 International Business Machines Corporation MgO tunnel barriers and method of formation
JP4128938B2 (ja) 2003-10-28 2008-07-30 株式会社日立製作所 磁気ヘッド及び磁気記録再生装置
US7884403B2 (en) * 2004-03-12 2011-02-08 Japan Science And Technology Agency Magnetic tunnel junction device and memory device including the same
JP2006210391A (ja) * 2005-01-25 2006-08-10 Japan Science & Technology Agency 磁気抵抗素子及びその製造方法
JP2007155854A (ja) 2005-11-30 2007-06-21 Kyocera Mita Corp 画像形成装置
JP4758812B2 (ja) 2006-04-26 2011-08-31 株式会社日立製作所 スピン流狭窄層を備えたスピン蓄積素子及びその作製方法
JP2009049264A (ja) * 2007-08-22 2009-03-05 Toshiba Corp 磁気記憶素子及び磁気記憶装置
JP4996390B2 (ja) * 2007-08-28 2012-08-08 株式会社東芝 スピンｆｅｔ及び磁気抵抗効果素子
JP5326242B2 (ja) * 2007-08-30 2013-10-30 富士通株式会社 磁気トンネル素子、これを利用した半導体装置およびその製造方法
US8747629B2 (en) * 2008-09-22 2014-06-10 Headway Technologies, Inc. TMR device with novel free layer
JP2010109319A (ja) 2008-09-30 2010-05-13 Canon Anelva Corp 磁気抵抗素子の製造法および記憶媒体

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