JP5598975B2 - スピン注入源およびその製造方法 - Google Patents

スピン注入源およびその製造方法 Download PDF

Info

Publication number
JP5598975B2
JP5598975B2 JP2010197047A JP2010197047A JP5598975B2 JP 5598975 B2 JP5598975 B2 JP 5598975B2 JP 2010197047 A JP2010197047 A JP 2010197047A JP 2010197047 A JP2010197047 A JP 2010197047A JP 5598975 B2 JP5598975 B2 JP 5598975B2
Authority
JP
Japan
Prior art keywords
spin
mgo
film
spin injection
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010197047A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012054470A (ja
JP2012054470A5 (enExample
Inventor
康裕 福間
義近 大谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RIKEN
Original Assignee
RIKEN
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RIKEN filed Critical RIKEN
Priority to JP2010197047A priority Critical patent/JP5598975B2/ja
Priority to US13/223,785 priority patent/US8790797B2/en
Publication of JP2012054470A publication Critical patent/JP2012054470A/ja
Publication of JP2012054470A5 publication Critical patent/JP2012054470A5/ja
Application granted granted Critical
Publication of JP5598975B2 publication Critical patent/JP5598975B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/385—Devices using spin-polarised carriers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive
    • Y10T428/1114—Magnetoresistive having tunnel junction effect
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive
    • Y10T428/1121—Multilayer

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
JP2010197047A 2010-09-02 2010-09-02 スピン注入源およびその製造方法 Expired - Fee Related JP5598975B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2010197047A JP5598975B2 (ja) 2010-09-02 2010-09-02 スピン注入源およびその製造方法
US13/223,785 US8790797B2 (en) 2010-09-02 2011-09-01 Spin injection source and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010197047A JP5598975B2 (ja) 2010-09-02 2010-09-02 スピン注入源およびその製造方法

Publications (3)

Publication Number Publication Date
JP2012054470A JP2012054470A (ja) 2012-03-15
JP2012054470A5 JP2012054470A5 (enExample) 2013-09-19
JP5598975B2 true JP5598975B2 (ja) 2014-10-01

Family

ID=45770948

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010197047A Expired - Fee Related JP5598975B2 (ja) 2010-09-02 2010-09-02 スピン注入源およびその製造方法

Country Status (2)

Country Link
US (1) US8790797B2 (enExample)
JP (1) JP5598975B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2989833B1 (fr) * 2012-04-18 2014-12-26 Centre Nat Rech Scient Dispositif injecteur de spins comportant une couche de protection en son centre
JP6263344B2 (ja) * 2013-07-26 2018-01-17 株式会社東芝 磁気センサー装置、ハードディスクヘッド、および磁気記録再生装置
US9633678B2 (en) 2015-09-29 2017-04-25 Seagate Technology Llc Data reader with spin filter
US12004355B2 (en) * 2020-10-23 2024-06-04 Samsung Electronics Co., Ltd. Magnetic tunnel junction element and magnetoresistive memory device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4714918B2 (ja) 2002-11-29 2011-07-06 独立行政法人科学技術振興機構 スピン注入素子及びスピン注入素子を用いた磁気装置
JP4029772B2 (ja) 2003-05-16 2008-01-09 株式会社日立製作所 磁気ヘッドおよびそれを用いた磁気記録再生装置
JP3818276B2 (ja) 2003-06-24 2006-09-06 独立行政法人科学技術振興機構 スピン注入素子及びそれを用いた磁気装置
US7598555B1 (en) * 2003-08-22 2009-10-06 International Business Machines Corporation MgO tunnel barriers and method of formation
JP4128938B2 (ja) 2003-10-28 2008-07-30 株式会社日立製作所 磁気ヘッド及び磁気記録再生装置
US7884403B2 (en) * 2004-03-12 2011-02-08 Japan Science And Technology Agency Magnetic tunnel junction device and memory device including the same
JP2006210391A (ja) * 2005-01-25 2006-08-10 Japan Science & Technology Agency 磁気抵抗素子及びその製造方法
JP2007155854A (ja) 2005-11-30 2007-06-21 Kyocera Mita Corp 画像形成装置
JP4758812B2 (ja) 2006-04-26 2011-08-31 株式会社日立製作所 スピン流狭窄層を備えたスピン蓄積素子及びその作製方法
JP2009049264A (ja) * 2007-08-22 2009-03-05 Toshiba Corp 磁気記憶素子及び磁気記憶装置
JP4996390B2 (ja) * 2007-08-28 2012-08-08 株式会社東芝 スピンｆｅｔ及び磁気抵抗効果素子
JP5326242B2 (ja) * 2007-08-30 2013-10-30 富士通株式会社 磁気トンネル素子、これを利用した半導体装置およびその製造方法
US8747629B2 (en) * 2008-09-22 2014-06-10 Headway Technologies, Inc. TMR device with novel free layer
JP2010109319A (ja) 2008-09-30 2010-05-13 Canon Anelva Corp 磁気抵抗素子の製造法および記憶媒体

Also Published As

Publication number Publication date
US20120058367A1 (en) 2012-03-08
JP2012054470A (ja) 2012-03-15
US8790797B2 (en) 2014-07-29

Similar Documents

Publication Publication Date Title
CN108292703B (zh) 自旋流磁化反转元件、磁阻效应元件及磁存储器
CN108011039B (zh) 自旋轨道转矩型磁化反转元件及磁存储器
Parkin et al. Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
US7606010B2 (en) Mg-Zn oxide tunnel barriers and method of formation
JP4758812B2 (ja) スピン流狭窄層を備えたスピン蓄積素子及びその作製方法
EP1885006A1 (en) A novel capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same
Zhang et al. Ferromagnet/two-dimensional semiconducting transition-metal dichalcogenide interface with perpendicular magnetic anisotropy
JP6444276B2 (ja) 磁気抵抗素子、その用途及び製造方法、並びにホイスラー合金の製造方法
CN111276600B (zh) 磁阻效应元件
WO2015062174A1 (zh) 一种用于温度传感器的纳米磁性多层膜及其制造方法
JP6654780B2 (ja) 磁気抵抗素子の製造方法
KR102751409B1 (ko) 스핀궤도 토크(spin-orbit torque, SOT) 기반 자기 터널 접합 및 이의 제조 방법
CN100550456C (zh) 一种具有量子效应的MgO双势垒磁性隧道结及其用途
JP5598975B2 (ja) スピン注入源およびその製造方法
Moinuddin et al. Low-Current-Density Magnetic Tunnel Junctions for STT-RAM Application Using MgO $ _ {{x}} $ N $ _ {\text {1}-{x}}\,\,({x}=\text {0.57} $) Tunnel Barrier
KR20220069798A (ko) 스핀궤도 토크(spin-orbit torque, SOT) 기반 자기 터널 접합 및 이의 제조 방법
JP7066222B2 (ja) 面直電流巨大磁気抵抗素子、その前駆体、及びその製造方法
CN108807211B (zh) 一种用于测量二维半导体材料的磁阻的装置及其制作方法
JP5294043B2 (ja) トンネル磁気抵抗素子
US20150299850A1 (en) Graphene Spin Filters via Chemical Vapor Deposition
JP6821216B2 (ja) 磁気抵抗素子及びその使用方法
WO2019225160A1 (ja) スピン蓄積装置
Sawabu et al. The electrical resistivity of epitaxially deposited chromium films
Hütten et al. The current potential of Co2MnSi Heusler alloy electrodes in magnetic tunnel junctions
Jorritsma et al. Anomalous negative resistance in superconducting vanadium nanowires

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130812

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130812

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140507

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140703

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140722

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140807

R150 Certificate of patent or registration of utility model

Ref document number: 5598975

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees