JP2012033472A5 - - Google Patents
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- JP2012033472A5 JP2012033472A5 JP2011139632A JP2011139632A JP2012033472A5 JP 2012033472 A5 JP2012033472 A5 JP 2012033472A5 JP 2011139632 A JP2011139632 A JP 2011139632A JP 2011139632 A JP2011139632 A JP 2011139632A JP 2012033472 A5 JP2012033472 A5 JP 2012033472A5
- Authority
- JP
- Japan
- Prior art keywords
- manufacturing
- storage device
- current collector
- power storage
- crystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Claims (4)
- 集電体上に、シリコンを含むガスと窒素ガスとを用いた減圧化学的気相成長法により、ウィスカー群を含む結晶性シリコン層を形成することを特徴とする蓄電装置の作製方法。
- 集電体上に、シリコンを含むガスとヘリウムガスとを用いた減圧化学的気相成長法により、ウィスカー群を含む結晶性シリコン層を形成することを特徴とする蓄電装置の作製方法。
- 請求項１又は請求項２において、
前記集電体として、チタンを用いることを特徴とする蓄電装置の作製方法。 - 請求項１乃至請求項３のいずれか一において、
前記結晶性シリコン層は、活物質層として機能することを特徴とする蓄電装置の作製方法。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011139632A JP5663414B2 (ja) | 2010-06-30 | 2011-06-23 | 蓄電装置の作製方法 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010149164 | 2010-06-30 | ||
| JP2010149175 | 2010-06-30 | ||
| JP2010149164 | 2010-06-30 | ||
| JP2010149175 | 2010-06-30 | ||
| JP2011139632A JP5663414B2 (ja) | 2010-06-30 | 2011-06-23 | 蓄電装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012033472A JP2012033472A (ja) | 2012-02-16 |
| JP2012033472A5 true JP2012033472A5 (ja) | 2014-05-15 |
| JP5663414B2 JP5663414B2 (ja) | 2015-02-04 |
Family
ID=45399891
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011139632A Expired - Fee Related JP5663414B2 (ja) | 2010-06-30 | 2011-06-23 | 蓄電装置の作製方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20120003383A1 (ja) |
| JP (1) | JP5663414B2 (ja) |
| KR (1) | KR101830194B1 (ja) |
| TW (1) | TWI527294B (ja) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011136028A1 (en) | 2010-04-28 | 2011-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device and method for manufacturing the same |
| KR101838627B1 (ko) | 2010-05-28 | 2018-03-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 축전 장치 및 그 제작 방법 |
| US8852294B2 (en) | 2010-05-28 | 2014-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device and method for manufacturing the same |
| WO2011152190A1 (en) | 2010-06-02 | 2011-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device and method for manufacturing the same |
| WO2011155397A1 (en) | 2010-06-11 | 2011-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device |
| US8846530B2 (en) | 2010-06-30 | 2014-09-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming semiconductor region and method for manufacturing power storage device |
| WO2012002136A1 (en) | 2010-06-30 | 2012-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of power storage device |
| US9543577B2 (en) | 2010-12-16 | 2017-01-10 | Semiconductor Energy Laboratory Co., Ltd. | Active material, electrode including the active material and manufacturing method thereof, and secondary battery |
| JP6035054B2 (ja) | 2011-06-24 | 2016-11-30 | 株式会社半導体エネルギー研究所 | 蓄電装置の電極の作製方法 |
| KR20130006301A (ko) | 2011-07-08 | 2013-01-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 실리콘막의 제작 방법 및 축전 장치의 제작 방법 |
| US8814956B2 (en) | 2011-07-14 | 2014-08-26 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device, electrode, and manufacturing method thereof |
| WO2013027561A1 (en) | 2011-08-19 | 2013-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing graphene-coated object, negative electrode of secondary battery including graphene-coated object, and secondary battery including the negative electrode |
| JP6025284B2 (ja) | 2011-08-19 | 2016-11-16 | 株式会社半導体エネルギー研究所 | 蓄電装置用の電極及び蓄電装置 |
| WO2013031526A1 (en) | 2011-08-26 | 2013-03-07 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device |
| KR20130024769A (ko) | 2011-08-30 | 2013-03-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 축전 장치 |
| JP6034621B2 (ja) | 2011-09-02 | 2016-11-30 | 株式会社半導体エネルギー研究所 | 蓄電装置の電極および蓄電装置 |
| US9401247B2 (en) | 2011-09-21 | 2016-07-26 | Semiconductor Energy Laboratory Co., Ltd. | Negative electrode for power storage device and power storage device |
| JP6050106B2 (ja) * | 2011-12-21 | 2016-12-21 | 株式会社半導体エネルギー研究所 | 非水二次電池用シリコン負極の製造方法 |
| KR102581914B1 (ko) | 2013-04-19 | 2023-09-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 이차 전지 및 그 제작 방법 |
| KR101882396B1 (ko) * | 2016-10-18 | 2018-07-26 | 서울대학교산학협력단 | 리튬 전지 및 리튬 전지의 전극 제조방법 |
| JP6530866B2 (ja) * | 2016-12-19 | 2019-06-12 | 京セラ株式会社 | リチウムイオン二次電池用負極、リチウムイオン二次電池、リチウムイオン二次電池用負極の製造方法 |
| US11043676B1 (en) * | 2019-12-05 | 2021-06-22 | Enevate Corporation | Method and system for silosilazanes, silosiloxanes, and siloxanes as additives for silicon dominant anodes |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001210315A (ja) * | 2000-01-25 | 2001-08-03 | Sanyo Electric Co Ltd | リチウム二次電池用電極及びこれを用いたリチウム二次電池 |
| KR101530379B1 (ko) * | 2006-03-29 | 2015-06-22 | 삼성전자주식회사 | 다공성 글래스 템플릿을 이용한 실리콘 나노 와이어의제조방법 및 이에 의해 형성된 실리콘 나노 와이어를포함하는 소자 |
| KR100723882B1 (ko) * | 2006-06-15 | 2007-05-31 | 한국전자통신연구원 | 실리콘 나노점 박막을 이용한 실리콘 나노와이어 제조 방법 |
| JP2008269827A (ja) * | 2007-04-17 | 2008-11-06 | Matsushita Electric Ind Co Ltd | 電気化学素子の電極材料およびその製造方法並びにそれを用いた電極極板および電気化学素子 |
| JP2008305781A (ja) * | 2007-05-09 | 2008-12-18 | Mitsubishi Chemicals Corp | 電極及びその製造方法、並びに非水電解質二次電池 |
| JP2010262752A (ja) * | 2009-04-30 | 2010-11-18 | Furukawa Electric Co Ltd:The | リチウムイオン二次電池用の負極、それを用いたリチウムイオン二次電池、リチウムイオン二次電池用の負極の製造方法 |
| EP2543098B1 (en) * | 2010-03-03 | 2019-07-31 | Amprius, Inc. | Template electrode structures for depositing active materials |
-
2011
- 2011-06-13 KR KR1020110056846A patent/KR101830194B1/ko active IP Right Grant
- 2011-06-13 US US13/158,619 patent/US20120003383A1/en not_active Abandoned
- 2011-06-23 JP JP2011139632A patent/JP5663414B2/ja not_active Expired - Fee Related
- 2011-06-27 TW TW100122428A patent/TWI527294B/zh not_active IP Right Cessation
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