JP2012015480A5 - - Google Patents

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Publication number
JP2012015480A5
JP2012015480A5 JP2010259153A JP2010259153A JP2012015480A5 JP 2012015480 A5 JP2012015480 A5 JP 2012015480A5 JP 2010259153 A JP2010259153 A JP 2010259153A JP 2010259153 A JP2010259153 A JP 2010259153A JP 2012015480 A5 JP2012015480 A5 JP 2012015480A5
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JP
Japan
Prior art keywords
semiconductor
units
unit
electrode pad
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010259153A
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English (en)
Japanese (ja)
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JP2012015480A (ja
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Publication date
Priority claimed from US12/830,059 external-priority patent/US9324691B2/en
Application filed filed Critical
Publication of JP2012015480A publication Critical patent/JP2012015480A/ja
Publication of JP2012015480A5 publication Critical patent/JP2012015480A5/ja
Pending legal-status Critical Current

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JP2010259153A 2010-07-02 2010-11-19 光電素子 Pending JP2012015480A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/830,059 2010-07-02
US12/830,059 US9324691B2 (en) 2009-10-20 2010-07-02 Optoelectronic device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015195552A Division JP6255372B2 (ja) 2010-07-02 2015-10-01 光電素子

Publications (2)

Publication Number Publication Date
JP2012015480A JP2012015480A (ja) 2012-01-19
JP2012015480A5 true JP2012015480A5 (fr) 2014-01-09

Family

ID=45349596

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2010259153A Pending JP2012015480A (ja) 2010-07-02 2010-11-19 光電素子
JP2015195552A Active JP6255372B2 (ja) 2010-07-02 2015-10-01 光電素子
JP2020047220A Active JP7001728B2 (ja) 2010-07-02 2020-03-18 光電素子

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2015195552A Active JP6255372B2 (ja) 2010-07-02 2015-10-01 光電素子
JP2020047220A Active JP7001728B2 (ja) 2010-07-02 2020-03-18 光電素子

Country Status (5)

Country Link
JP (3) JP2012015480A (fr)
KR (4) KR101616098B1 (fr)
CN (2) CN102315239B (fr)
DE (1) DE102010060269B4 (fr)
TW (3) TWI466284B (fr)

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TWI466284B (zh) * 2010-07-02 2014-12-21 Epistar Corp 光電元件
KR20140059985A (ko) * 2012-11-09 2014-05-19 엘지이노텍 주식회사 발광소자
KR101992366B1 (ko) * 2012-12-27 2019-06-24 엘지이노텍 주식회사 발광 소자
TWI633683B (zh) * 2013-08-27 2018-08-21 晶元光電股份有限公司 具有複數個發光結構之發光元件
TWI597864B (zh) 2013-08-27 2017-09-01 晶元光電股份有限公司 具有複數個發光結構之發光元件
CN110047865B (zh) * 2013-09-03 2024-02-23 晶元光电股份有限公司 具有多个发光结构的发光元件
CN104681575A (zh) * 2013-11-29 2015-06-03 晶元光电股份有限公司 发光二极管元件
JP6351520B2 (ja) * 2014-08-07 2018-07-04 株式会社東芝 半導体発光素子
CN110854250A (zh) * 2015-02-13 2020-02-28 首尔伟傲世有限公司 发光元件
KR102647673B1 (ko) * 2016-09-27 2024-03-14 서울바이오시스 주식회사 발광 다이오드
KR102480220B1 (ko) * 2016-04-08 2022-12-26 삼성전자주식회사 발광 다이오드 모듈 및 이를 구비한 디스플레이 패널
KR101987196B1 (ko) * 2016-06-14 2019-06-11 삼성디스플레이 주식회사 픽셀 구조체, 픽셀 구조체를 포함하는 표시장치 및 그 제조 방법
KR102363036B1 (ko) * 2017-04-03 2022-02-15 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자 및 이를 포함하는 반도체 소자 패키지
CN107516701B (zh) * 2017-07-14 2019-06-11 华灿光电(苏州）有限公司 一种高压发光二极管芯片及其制作方法
TWI731163B (zh) * 2017-09-13 2021-06-21 晶元光電股份有限公司 半導體元件

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KR101025972B1 (ko) * 2008-06-30 2011-03-30 삼성엘이디 주식회사 교류 구동 발광 장치
US20110121329A1 (en) * 2008-08-06 2011-05-26 Helio Optoelectronics Corporation AC LED Structure
JP5217787B2 (ja) * 2008-08-27 2013-06-19 日亜化学工業株式会社 半導体発光素子
WO2010050694A2 (fr) * 2008-10-29 2010-05-06 서울옵토디바이스주식회사 Diode électroluminescente
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KR101020910B1 (ko) * 2008-12-24 2011-03-09 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
JP4566267B1 (ja) * 2009-04-21 2010-10-20 シャープ株式会社 電源装置
US9324691B2 (en) * 2009-10-20 2016-04-26 Epistar Corporation Optoelectronic device
WO2011115361A2 (fr) * 2010-03-15 2011-09-22 서울옵토디바이스주식회사 Dispositif électroluminescent doté d'une pluralité de cellules électroluminescentes
TWI466284B (zh) * 2010-07-02 2014-12-21 Epistar Corp 光電元件
JP5997737B2 (ja) * 2014-03-28 2016-09-28 株式会社インフォシティ コンテンツ再生装置

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