JP2012015343A5 - - Google Patents

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Publication number
JP2012015343A5
JP2012015343A5 JP2010150710A JP2010150710A JP2012015343A5 JP 2012015343 A5 JP2012015343 A5 JP 2012015343A5 JP 2010150710 A JP2010150710 A JP 2010150710A JP 2010150710 A JP2010150710 A JP 2010150710A JP 2012015343 A5 JP2012015343 A5 JP 2012015343A5
Authority
JP
Japan
Prior art keywords
film
forming step
plasma etching
mask
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010150710A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012015343A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2010150710A priority Critical patent/JP2012015343A/ja
Priority claimed from JP2010150710A external-priority patent/JP2012015343A/ja
Priority to KR1020100072325A priority patent/KR101203914B1/ko
Priority to TW099125078A priority patent/TW201203348A/zh
Priority to US12/855,265 priority patent/US20120003838A1/en
Publication of JP2012015343A publication Critical patent/JP2012015343A/ja
Publication of JP2012015343A5 publication Critical patent/JP2012015343A5/ja
Pending legal-status Critical Current

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JP2010150710A 2010-07-01 2010-07-01 プラズマエッチング方法 Pending JP2012015343A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010150710A JP2012015343A (ja) 2010-07-01 2010-07-01 プラズマエッチング方法
KR1020100072325A KR101203914B1 (ko) 2010-07-01 2010-07-27 플라즈마 에칭방법
TW099125078A TW201203348A (en) 2010-07-01 2010-07-29 Plasma etching method
US12/855,265 US20120003838A1 (en) 2010-07-01 2010-08-12 Plasma etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010150710A JP2012015343A (ja) 2010-07-01 2010-07-01 プラズマエッチング方法

Publications (2)

Publication Number Publication Date
JP2012015343A JP2012015343A (ja) 2012-01-19
JP2012015343A5 true JP2012015343A5 (enExample) 2013-06-27

Family

ID=45400037

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010150710A Pending JP2012015343A (ja) 2010-07-01 2010-07-01 プラズマエッチング方法

Country Status (4)

Country Link
US (1) US20120003838A1 (enExample)
JP (1) JP2012015343A (enExample)
KR (1) KR101203914B1 (enExample)
TW (1) TW201203348A (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9117764B2 (en) * 2010-08-27 2015-08-25 Tokyo Electron Limited Etching method, substrate processing method, pattern forming method, method for manufacturing semiconductor element, and semiconductor element
JP6173684B2 (ja) * 2012-12-25 2017-08-02 株式会社日立ハイテクノロジーズ 半導体装置の製造方法
KR102106256B1 (ko) 2013-07-03 2020-05-04 삼성전자 주식회사 포토 마스크 및 그 제조 방법
JP6748354B2 (ja) 2015-09-18 2020-09-02 セントラル硝子株式会社 ドライエッチング方法及びドライエッチング剤
JP6770848B2 (ja) 2016-03-29 2020-10-21 東京エレクトロン株式会社 被処理体を処理する方法
WO2017170405A1 (ja) 2016-03-29 2017-10-05 東京エレクトロン株式会社 被処理体を処理する方法
KR102375256B1 (ko) * 2017-05-26 2022-03-16 주성엔지니어링(주) 기판 처리 장치 및 기판 처리 방법
JP6363266B2 (ja) * 2017-06-22 2018-07-25 株式会社日立ハイテクノロジーズ 半導体装置の製造方法
DE102017128070B4 (de) 2017-08-31 2023-08-31 Taiwan Semiconductor Manufacturing Company, Ltd. Ätzen zum Verringern von Bahnunregelmässigkeiten
US10475700B2 (en) * 2017-08-31 2019-11-12 Taiwan Semiconductor Manufacturing Company, Ltd. Etching to reduce line wiggling
JP7045954B2 (ja) 2018-07-25 2022-04-01 東京エレクトロン株式会社 ハードマスク用膜を形成する方法および装置、ならびに半導体装置の製造方法
KR102756671B1 (ko) 2019-02-21 2025-01-17 삼성디스플레이 주식회사 감광성 수지 조성물, 이를 이용한 표시 장치 및 표시 장치의 제조 방법
CN111785613B (zh) * 2019-04-04 2025-03-28 长鑫存储技术有限公司 半导体结构的形成方法以及半导体结构

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0372087A (ja) * 1989-08-10 1991-03-27 Toshiba Corp ドライエッチング方法
JP3407086B2 (ja) * 1994-06-17 2003-05-19 日本テキサス・インスツルメンツ株式会社 半導体装置の製造方法
US7361607B2 (en) * 2003-06-27 2008-04-22 Lam Research Corporation Method for multi-layer resist plasma etch
US7316785B2 (en) * 2004-06-30 2008-01-08 Lam Research Corporation Methods and apparatus for the optimization of etch resistance in a plasma processing system
US7253118B2 (en) * 2005-03-15 2007-08-07 Micron Technology, Inc. Pitch reduced patterns relative to photolithography features
US7981810B1 (en) * 2006-06-08 2011-07-19 Novellus Systems, Inc. Methods of depositing highly selective transparent ashable hardmask films
US20100330805A1 (en) * 2007-11-02 2010-12-30 Kenny Linh Doan Methods for forming high aspect ratio features on a substrate

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