JP2012014002A5 - - Google Patents

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Publication number
JP2012014002A5
JP2012014002A5 JP2010151244A JP2010151244A JP2012014002A5 JP 2012014002 A5 JP2012014002 A5 JP 2012014002A5 JP 2010151244 A JP2010151244 A JP 2010151244A JP 2010151244 A JP2010151244 A JP 2010151244A JP 2012014002 A5 JP2012014002 A5 JP 2012014002A5
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JP
Japan
Prior art keywords
layer
semiconductor
bonding
bonding layer
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010151244A
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English (en)
Japanese (ja)
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JP2012014002A (ja
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Publication date
Application filed filed Critical
Priority to JP2010151244A priority Critical patent/JP2012014002A/ja
Priority claimed from JP2010151244A external-priority patent/JP2012014002A/ja
Priority to PCT/JP2011/060909 priority patent/WO2012002045A1/ja
Publication of JP2012014002A publication Critical patent/JP2012014002A/ja
Publication of JP2012014002A5 publication Critical patent/JP2012014002A5/ja
Pending legal-status Critical Current

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JP2010151244A 2010-07-01 2010-07-01 半導体装置およびその製造方法、集積基板、光モジュール、光通信装置 Pending JP2012014002A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2010151244A JP2012014002A (ja) 2010-07-01 2010-07-01 半導体装置およびその製造方法、集積基板、光モジュール、光通信装置
PCT/JP2011/060909 WO2012002045A1 (ja) 2010-07-01 2011-05-12 半導体装置およびその製造方法、集積基板、光モジュール、光通信装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010151244A JP2012014002A (ja) 2010-07-01 2010-07-01 半導体装置およびその製造方法、集積基板、光モジュール、光通信装置

Publications (2)

Publication Number Publication Date
JP2012014002A JP2012014002A (ja) 2012-01-19
JP2012014002A5 true JP2012014002A5 (enExample) 2012-12-27

Family

ID=45401780

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010151244A Pending JP2012014002A (ja) 2010-07-01 2010-07-01 半導体装置およびその製造方法、集積基板、光モジュール、光通信装置

Country Status (2)

Country Link
JP (1) JP2012014002A (enExample)
WO (1) WO2012002045A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8469588B2 (en) * 2010-05-03 2013-06-25 General Electric Company System and method for compressor inlet temperature measurement
JP6601791B2 (ja) * 2015-07-13 2019-11-06 株式会社Ｑｄレーザ 半導体レーザ、光モジュール、光通信装置、及び光通信システム
US10168475B2 (en) 2017-01-18 2019-01-01 Juniper Networks, Inc. Atomic layer deposition bonding for heterogeneous integration of photonics and electronics
KR102510356B1 (ko) * 2018-05-03 2023-03-17 오픈라이트 포토닉스, 인크. 포토닉스와 일렉트로닉스의 이종 통합을 위한 원자 층 퇴적 본딩
JP7660859B2 (ja) * 2020-04-30 2025-04-14 ウニフェルジテイト・ヘント コロイド量子ドット発光体及び検出器
JP7578025B2 (ja) * 2021-03-01 2024-11-06 住友電気工業株式会社 半導体光素子およびその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2624119B2 (ja) * 1993-06-03 1997-06-25 日本電気株式会社 複合型半導体積層構造の製造方法
US6730990B2 (en) * 2000-06-30 2004-05-04 Seiko Epson Corporation Mountable microstructure and optical transmission apparatus
JP4167812B2 (ja) * 2001-03-07 2008-10-22 セイコーエプソン株式会社 面発光型半導体レーザおよびその製造方法
JP2002305144A (ja) * 2001-04-05 2002-10-18 Seiko Epson Corp 半導体基板の製造方法、ならびに半導体基板の製造装置
JP2007164110A (ja) * 2005-12-19 2007-06-28 National Institute Of Advanced Industrial & Technology 光ｉ／ｏ部作製方法および光集積回路
JP2008198957A (ja) * 2007-02-16 2008-08-28 Hitachi Ltd 半導体レーザ装置および光増幅装置

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