JP2012002812A - センサ、及びセンサを製造する方法 - Google Patents
センサ、及びセンサを製造する方法 Download PDFInfo
- Publication number
- JP2012002812A JP2012002812A JP2011131721A JP2011131721A JP2012002812A JP 2012002812 A JP2012002812 A JP 2012002812A JP 2011131721 A JP2011131721 A JP 2011131721A JP 2011131721 A JP2011131721 A JP 2011131721A JP 2012002812 A JP2012002812 A JP 2012002812A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- layer
- sensor
- manufacturing
- pressure sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00182—Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
- B81C2201/019—Bonding or gluing multiple substrate layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
Abstract
【解決手段】センサ及びセンサを製造する方法が開示され、このセンサは一実施形態では、エッチングされた半導体基材ウェーハ(300)を、シリコン積載絶縁体型ウェーハを含むエッチングされたデバイス・ウェーハ(100)に接着して懸吊構造を形成し、この構造の曲げが、埋め込まれた感知素子(140)によって決定されて絶対圧を測定する。センサに埋め込まれた相互接続路(400)によって、他のデバイスとの相互接続性を確保しつつデバイスの滑らかなパッケージ形状を容易にする。
【選択図】図1
Description
50:末梢端
75:基部端
100:デバイス・ウェーハ
110:デバイス層
115:絶縁体層
120:ハンドル層
130:隔膜
140:感知素子
150:相互接続
160:金属化層
170:不動態化層
200:デバイス・ウェーハ
210:デバイス層
215:絶縁体層
220:ハンドル層
230:隔膜空洞
300:基材ウェーハ
310:基材上面
320:基材底面
330:通気孔空洞
332:通気孔陥凹
333:通気孔通路
335:通気孔出口
350:厚み示線
400:相互接続路
450:デバイス対
470:不動態化層
Claims (9)
- センサを製造する方法であって、
基材ウェーハ(300)の上面から内部に延在する隔膜空洞(230)を形成するステップと、
該隔膜空洞(230)を覆う隔膜(130)を形成しつつ前記基材ウェーハ(300)の前記上面をデバイス・ウェーハ(100)の底面に接着するステップであって、前記デバイス・ウェーハ(100)は、底面が当該デバイス・ウェーハ(100)の底面を形成するデバイス層(110)と、ハンドル(120)と、前記デバイス層(110)と前記ハンドル(120)との間に位置する絶縁体層(115)とを含んでいる、接着するステップと、
前記デバイス・ウェーハ(100)から前記ハンドル(120)及び前記絶縁体層(115)を除去するステップと、
前記隔膜(130)の曲げを感知するように、前記デバイス層(110)において前記隔膜(130)の近傍に感知素子(140)を配置するステップと、
前記デバイス層(110)の一部を除去することにより相互接続路(400)を形成するステップと
を備えた方法。 - 相互接続路(400)を形成する前記ステップは、前記基材ウェーハ(300)の一部を除去するステップをさらに含んでいる、請求項1に記載のセンサを製造する方法。
- 前記相互接続路(400)の内部に少なくとも部分的に嵌合している金属化層(160)を形成するステップをさらに含んでいる請求項1に記載のセンサを製造する方法。
- 前記感知素子(140)はピエゾ抵抗感知素子である、請求項1に記載のセンサを製造する方法。
- 前記基材ウェーハ(300)は両面研摩半導体ウェーハを含んでいる、請求項1に記載のセンサを製造する方法。
- 前記基材ウェーハ(300)はデバイス層と、絶縁体層と、ハンドルとを含んでおり、前記絶縁体層は前記デバイス層と前記ハンドルとの間に位置している、請求項1に記載のセンサを製造する方法。
- 前記基材ウェーハ(300)から前記ハンドル及び前記絶縁体層を除去するステップをさらに含んでいる請求項6に記載のセンサを製造する方法。
- 当該センサは絶対圧を測定する、請求項1に記載のセンサを製造する方法。
- 前記デバイス層(110)の厚みが当該センサの感度を決定する、請求項1に記載のセンサを製造する方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/818,611 | 2010-06-18 | ||
US12/818,611 US8435821B2 (en) | 2010-06-18 | 2010-06-18 | Sensor and method for fabricating the same |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2012002812A true JP2012002812A (ja) | 2012-01-05 |
Family
ID=45091359
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011131721A Pending JP2012002812A (ja) | 2010-06-18 | 2011-06-14 | センサ、及びセンサを製造する方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8435821B2 (ja) |
JP (1) | JP2012002812A (ja) |
CN (1) | CN102285632B (ja) |
DE (1) | DE102011050837A1 (ja) |
IE (1) | IE86120B1 (ja) |
SG (1) | SG177087A1 (ja) |
Cited By (1)
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JP2018536845A (ja) * | 2015-10-28 | 2018-12-13 | ヒューレット−パッカード デベロップメント カンパニー エル.ピー.Hewlett‐Packard Development Company, L.P. | 相対圧センサ |
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US9273559B2 (en) * | 2013-03-08 | 2016-03-01 | General Electric Company | Turbine blade cooling channel formation |
EP3307671B1 (en) | 2015-06-10 | 2022-06-15 | Nextinput, Inc. | Ruggedized wafer level mems force sensor with a tolerance trench |
US10753815B2 (en) | 2015-10-28 | 2020-08-25 | Hewlett-Packard Development Company, L.P. | Relative pressure sensor |
US10488288B2 (en) * | 2016-02-22 | 2019-11-26 | Kathirgamasundaram Sooriakumar | Capacitive pressure sensor |
CN106168514A (zh) * | 2016-08-28 | 2016-11-30 | 桂林市晶准测控技术有限公司 | 一种压力传感装置 |
US10548492B2 (en) * | 2016-12-08 | 2020-02-04 | MEAS Switzerland S.a.r.l. | Pressure sensor |
US11243125B2 (en) | 2017-02-09 | 2022-02-08 | Nextinput, Inc. | Integrated piezoresistive and piezoelectric fusion force sensor |
US11255737B2 (en) | 2017-02-09 | 2022-02-22 | Nextinput, Inc. | Integrated digital force sensors and related methods of manufacture |
US10036676B1 (en) * | 2017-03-15 | 2018-07-31 | Honeywell International Inc. | Microelectromechanical systems (MEMS) force die with buried cavity vented to the edges |
EP3655740A4 (en) | 2017-07-19 | 2021-07-14 | Nextinput, Inc. | STRESS TRANSFER STACKING IN MEMS FORCE SENSOR |
US11423686B2 (en) | 2017-07-25 | 2022-08-23 | Qorvo Us, Inc. | Integrated fingerprint and force sensor |
US11243126B2 (en) | 2017-07-27 | 2022-02-08 | Nextinput, Inc. | Wafer bonded piezoresistive and piezoelectric force sensor and related methods of manufacture |
US11579028B2 (en) | 2017-10-17 | 2023-02-14 | Nextinput, Inc. | Temperature coefficient of offset compensation for force sensor and strain gauge |
US11385108B2 (en) | 2017-11-02 | 2022-07-12 | Nextinput, Inc. | Sealed force sensor with etch stop layer |
WO2019099821A1 (en) | 2017-11-16 | 2019-05-23 | Nextinput, Inc. | Force attenuator for force sensor |
US10823631B2 (en) | 2018-04-18 | 2020-11-03 | Rosemount Aerospace Inc. | High temperature capacitive MEMS pressure sensor |
CN108622851A (zh) * | 2018-04-28 | 2018-10-09 | 中科芯集成电路股份有限公司 | 一种带有空腔的衬底的制备方法 |
DE102018207689B4 (de) * | 2018-05-17 | 2021-09-23 | Robert Bosch Gmbh | Verfahren zum Herstellen mindestens einer Membrananordnung, Membrananordnung für einen mikromechanischen Sensor und Bauteil |
DE102018222730A1 (de) | 2018-12-21 | 2020-06-25 | Robert Bosch Gmbh | Mikromechanisches Bauteil und Herstellungsverfahren für ein mikromechanisches Bauteil |
US10962427B2 (en) | 2019-01-10 | 2021-03-30 | Nextinput, Inc. | Slotted MEMS force sensor |
CN115014593B (zh) * | 2022-04-28 | 2023-11-07 | 青岛歌尔智能传感器有限公司 | 压力传感器的制备方法和压力传感器 |
CN116659731A (zh) * | 2023-04-03 | 2023-08-29 | 北京智芯传感科技有限公司 | 一种mems表压传感器及其制备方法 |
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2010
- 2010-06-18 US US12/818,611 patent/US8435821B2/en not_active Expired - Fee Related
-
2011
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- 2011-06-10 SG SG2011042512A patent/SG177087A1/en unknown
- 2011-06-14 JP JP2011131721A patent/JP2012002812A/ja active Pending
- 2011-06-16 IE IE20110281A patent/IE86120B1/en not_active IP Right Cessation
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JP2018536845A (ja) * | 2015-10-28 | 2018-12-13 | ヒューレット−パッカード デベロップメント カンパニー エル.ピー.Hewlett‐Packard Development Company, L.P. | 相対圧センサ |
Also Published As
Publication number | Publication date |
---|---|
IE20110281A1 (en) | 2011-12-21 |
CN102285632B (zh) | 2015-11-25 |
CN102285632A (zh) | 2011-12-21 |
US8435821B2 (en) | 2013-05-07 |
DE102011050837A8 (de) | 2012-08-23 |
US20110308324A1 (en) | 2011-12-22 |
SG177087A1 (en) | 2012-01-30 |
DE102011050837A1 (de) | 2011-12-22 |
IE86120B1 (en) | 2013-01-02 |
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