JP2011529841A5 - - Google Patents
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- Publication number
- JP2011529841A5 JP2011529841A5 JP2011520323A JP2011520323A JP2011529841A5 JP 2011529841 A5 JP2011529841 A5 JP 2011529841A5 JP 2011520323 A JP2011520323 A JP 2011520323A JP 2011520323 A JP2011520323 A JP 2011520323A JP 2011529841 A5 JP2011529841 A5 JP 2011529841A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- halogen element
- solid
- metallic
- impurities
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 49
- 229910052710 silicon Inorganic materials 0.000 claims description 49
- 239000010703 silicon Substances 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 29
- 229910052736 halogen Inorganic materials 0.000 claims description 19
- 150000002367 halogens Chemical class 0.000 claims description 19
- 239000007787 solid Substances 0.000 claims description 15
- 239000012535 impurity Substances 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 9
- 239000000155 melt Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 150000004820 halides Chemical class 0.000 claims description 3
- 229910052755 nonmetal Inorganic materials 0.000 claims description 3
- 230000008016 vaporization Effects 0.000 claims description 3
- 239000008187 granular material Substances 0.000 claims 3
- 238000000746 purification Methods 0.000 claims 3
- 239000011265 semifinished product Substances 0.000 claims 3
- 239000013078 crystal Substances 0.000 claims 2
- 239000010419 fine particle Substances 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 1
- 238000005231 Edge Defined Film Fed Growth Methods 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 125000004429 atom Chemical group 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 238000005266 casting Methods 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 239000000460 chlorine Substances 0.000 claims 1
- 238000002425 crystallisation Methods 0.000 claims 1
- 230000008025 crystallization Effects 0.000 claims 1
- 239000002019 doping agent Substances 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000002156 mixing Methods 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 229920000548 poly(silane) polymer Polymers 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 150000004756 silanes Chemical class 0.000 claims 1
- 238000007711 solidification Methods 0.000 claims 1
- 230000008023 solidification Effects 0.000 claims 1
- 239000000126 substance Chemical group 0.000 claims 1
- 238000005979 thermal decomposition reaction Methods 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102008036143A DE102008036143A1 (de) | 2008-08-01 | 2008-08-01 | Verfahren zum Entfernen von nichtmetallischen Verunreinigungen aus metallurgischem Silicium |
| DE102008036143.7 | 2008-08-01 | ||
| PCT/DE2009/001059 WO2010012273A2 (de) | 2008-08-01 | 2009-07-29 | Verfahren zum entfernen von nichtmetallischen verunreinigungen aus metallurgischem silicium |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011529841A JP2011529841A (ja) | 2011-12-15 |
| JP2011529841A5 true JP2011529841A5 (cg-RX-API-DMAC7.html) | 2012-09-06 |
| JP5635985B2 JP5635985B2 (ja) | 2014-12-03 |
Family
ID=41461624
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011520323A Expired - Fee Related JP5635985B2 (ja) | 2008-08-01 | 2009-07-29 | 金属ケイ素から非金属不純物を除去する方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9327987B2 (cg-RX-API-DMAC7.html) |
| EP (1) | EP2321220B1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP5635985B2 (cg-RX-API-DMAC7.html) |
| DE (1) | DE102008036143A1 (cg-RX-API-DMAC7.html) |
| WO (1) | WO2010012273A2 (cg-RX-API-DMAC7.html) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102009056731A1 (de) | 2009-12-04 | 2011-06-09 | Rev Renewable Energy Ventures, Inc. | Halogenierte Polysilane und Polygermane |
| MY206191A (en) * | 2019-04-30 | 2024-12-04 | Wacker Chemie Ag | Method for refining crude silicon melts using a particulate mediator |
| US20220212937A1 (en) * | 2019-04-30 | 2022-07-07 | Wacker Chemie Ag | Method for refining crude silicon melts using a particulate mediator |
| CN111675222B (zh) * | 2020-07-13 | 2022-08-09 | 昆明理工大学 | 一种利用低品位硅石生产工业硅的方法 |
| CN114720627A (zh) * | 2022-04-06 | 2022-07-08 | 江苏南大光电材料股份有限公司 | 一种滴定检测硅前驱体中卤素相对含量方法 |
Family Cites Families (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB702349A (en) | 1950-07-08 | 1954-01-13 | British Thomson Houston Co Ltd | Improvements in and relating to the preparation of chloropolysilanes |
| BE536407A (cg-RX-API-DMAC7.html) | 1954-03-12 | |||
| AT200106B (de) | 1956-12-24 | 1958-10-25 | Degussa | Verfahren zur Herstellung von reinstem Silizium |
| DE2623413C2 (de) | 1976-05-25 | 1985-01-10 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Herstellen von für Halbleiterbauelemente verwendbarem Silicium |
| US4298423A (en) | 1976-12-16 | 1981-11-03 | Semix Incorporated | Method of purifying silicon |
| FR2430917A1 (fr) | 1978-07-11 | 1980-02-08 | Comp Generale Electricite | Procede et dispositif d'elaboration de silicium polycristallin |
| US4200621A (en) | 1978-07-18 | 1980-04-29 | Motorola, Inc. | Sequential purification and crystal growth |
| US4374182A (en) | 1980-07-07 | 1983-02-15 | Dow Corning Corporation | Preparation of silicon metal through polymer degradation |
| US4312849A (en) | 1980-09-09 | 1982-01-26 | Aluminum Company Of America | Phosphorous removal in silicon purification |
| FR2530607B1 (fr) | 1982-07-26 | 1985-06-28 | Rhone Poulenc Spec Chim | Silicium pur, en poudre dense et son procede de preparation |
| DE3504723A1 (de) | 1985-02-12 | 1986-08-14 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum reinigen von silicium |
| JPS62289224A (ja) | 1986-06-06 | 1987-12-16 | Rikagaku Kenkyusho | レ−ザ−を用いたシリコンを主成分とする固体生成物の製造法 |
| JPS63225511A (ja) | 1986-10-09 | 1988-09-20 | Mitsubishi Metal Corp | 非晶質シリコン粉末の製造方法 |
| EP0264722A3 (en) | 1986-10-09 | 1989-07-12 | Mitsubishi Materials Corporation | Process for preparing amorphous silicon |
| DE3635064A1 (de) * | 1986-10-15 | 1988-04-21 | Bayer Ag | Verfahren zur raffination von silicium und derart gereinigtes silicium |
| JPS63222011A (ja) | 1987-03-11 | 1988-09-14 | Mitsubishi Metal Corp | 多結晶シリコンの製造方法 |
| DE3727647A1 (de) * | 1987-08-19 | 1989-03-02 | Bayer Ag | Verfahren zur abtrennung von verunreinigungen aus silicium |
| JPH01197309A (ja) | 1988-02-01 | 1989-08-09 | Mitsubishi Metal Corp | 粒状シリコンの製造方法 |
| US5030536A (en) | 1989-12-26 | 1991-07-09 | Xerox Corporation | Processes for restoring amorphous silicon imaging members |
| JP3037461B2 (ja) | 1991-05-07 | 2000-04-24 | キヤノン株式会社 | 光起電力素子 |
| US5772728A (en) | 1994-03-30 | 1998-06-30 | Elkem Asa | Method for upgrading of silicon-containing residues obtained after leaching of copper-containing residues from chlorosilane synthesis |
| NO180532C (no) | 1994-09-01 | 1997-05-07 | Elkem Materials | Fremgangsmåte for fjerning av forurensninger fra smeltet silisium |
| DE19735378A1 (de) | 1997-08-14 | 1999-02-18 | Wacker Chemie Gmbh | Verfahren zur Herstellung von hochreinem Siliciumgranulat |
| DE19859288A1 (de) | 1998-12-22 | 2000-06-29 | Bayer Ag | Agglomeration von Siliciumpulvern |
| CN1224574C (zh) | 2000-05-11 | 2005-10-26 | 德山株式会社 | 多晶硅、其生产方法及生产装置 |
| DE10057481A1 (de) | 2000-11-20 | 2002-05-23 | Solarworld Ag | Verfahren zur Herstellung von hochreinem, granularem Silizium |
| DE10060469A1 (de) | 2000-12-06 | 2002-07-04 | Solarworld Ag | Verfahren zur Herstellung von hochreinem, granularem Silizium |
| DE10124848A1 (de) | 2001-05-22 | 2002-11-28 | Solarworld Ag | Verfahren zur Herstellung von hochreinem, granularem Silizium in einer Wirbelschicht |
| JP2005255417A (ja) * | 2002-03-18 | 2005-09-22 | Sharp Corp | シリコンの精製方法 |
| US20060105105A1 (en) | 2004-11-12 | 2006-05-18 | Memc Electronic Materials, Inc. | High purity granular silicon and method of manufacturing the same |
| JP4966560B2 (ja) | 2005-03-07 | 2012-07-04 | 新日鉄マテリアルズ株式会社 | 高純度シリコンの製造方法 |
| DE102005024041A1 (de) | 2005-05-25 | 2006-11-30 | City Solar Ag | Verfahren zur Herstellung von Silicium aus Halogensilanen |
| US7959707B2 (en) | 2006-04-28 | 2011-06-14 | Sri International | Methods for producing consolidated materials |
| DE102006034061A1 (de) | 2006-07-20 | 2008-01-24 | REV Renewable Energy Ventures, Inc., Aloha | Polysilanverarbeitung und Verwendung |
| CN101588992A (zh) | 2006-09-29 | 2009-11-25 | 信越化学工业株式会社 | 硅的精炼方法、硅及太阳能电池 |
| GB0623290D0 (en) * | 2006-11-22 | 2007-01-03 | Qinetiq Nanomaterials Ltd | Purification method |
| DE102008025263B4 (de) | 2008-05-27 | 2015-08-06 | Spawnt Private S.À.R.L. | Verfahren zum Aufreinigen von metallurgischem Silicium |
| DE102008025264A1 (de) | 2008-05-27 | 2009-12-03 | Rev Renewable Energy Ventures, Inc. | Granulares Silicium |
| KR101687420B1 (ko) | 2008-05-27 | 2016-12-20 | 나가유나 퍼틸라이저스 앤 케미칼스 리미티드 | 할로겐화물을 함유한 실리콘, 그의 제조방법 및 용도 |
-
2008
- 2008-08-01 DE DE102008036143A patent/DE102008036143A1/de not_active Withdrawn
-
2009
- 2009-07-29 WO PCT/DE2009/001059 patent/WO2010012273A2/de not_active Ceased
- 2009-07-29 JP JP2011520323A patent/JP5635985B2/ja not_active Expired - Fee Related
- 2009-07-29 US US13/057,084 patent/US9327987B2/en not_active Expired - Fee Related
- 2009-07-29 EP EP09771469.5A patent/EP2321220B1/de not_active Not-in-force
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