JP2011527836A - 伝導を高めた非パンチスルー半導体チャネルを有する半導体デバイス及びその製法 - Google Patents
伝導を高めた非パンチスルー半導体チャネルを有する半導体デバイス及びその製法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 74
- 238000004519 manufacturing process Methods 0.000 title abstract description 5
- 230000005669 field effect Effects 0.000 claims abstract description 25
- 230000006698 induction Effects 0.000 claims abstract description 8
- 230000003068 static effect Effects 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 31
- 230000005684 electric field Effects 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 16
- 239000002019 doping agent Substances 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 32
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 25
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 26
- 238000005468 ion implantation Methods 0.000 description 14
- 230000000903 blocking effect Effects 0.000 description 10
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- 230000015556 catabolic process Effects 0.000 description 3
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- 239000007789 gas Substances 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000003446 memory effect Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
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Abstract
【選択図】 図1
Description
[1] J.N. Merrett, I. Sankin, V. Bonderenko, C.E. Smith, D. Kajfez, and J.R.B. Casady, 「RF and DC Characterization of Self-aligned L-band 4H-SiC Static Induction Transistors」, Materials Science Forum Vols. 527-529 (2006) pp. 1223-1226
[2] J.H. Zhao, K. Tone, X. Li, P. Alexandrov, L. Fursin and M. Weiner, 「3.6 mΩ・cm2, 1726V 4H-SiC normally-off trenched-and implanted vertical JFETs and circuit applications,」IEE Proc.-Circuits Devices Syst., Vol. 151, No.3, June 2004
[3] P. Sannuti, X. Li, F. Yan, K. Sheng, J.H. Zhao, 「Channel electron mobility in 4H-SiC lateral junction field effect transistors,」Solid-State Electronics 49 (2005) 1900-1904
[4] W. Shockley, 「A Unipolar 「Field-Effect」Transistor,」Proceedings of the IRE Volume 40, Issue 11, Nov. 1952, pp.:1365-1376.
[5] I. Sankin, 「Edge termination and RESURF technology in power silicon carbide devices,」 Ph.D. Dissertation, Mississippi State University, 2006; AAT 3213969, p.110.
[6] M. Nagata, T. Masuhara, N. Hashimoto, H. Masuda, 「A short-channel, punch-through-breakdown-free MOS transistor,」International Electron Devices Meeting, 1971 Volume 17, 1971 Page(s):2-3.
[7] Legacy CACE User's Guide AixRecipe; Recipe Language for AIXTRON AG, Kaskertstrasse 15-17 D-52072 Aashen, Germany.
Claims (19)
- 第1導電型の半導体材料の基板層と、
前記基板層上の前記第1導電型の半導体材料の第1層を備える半導体デバイスであって、前記第1層は、前記基板層の反対側表面を有し、
前記半導体デバイスは、さらに、
前記第1層の前記表面上に、前記第1導電型の半導体材料の隆起領域を備え、前記隆起領域は、上表面と第1側壁と第2側壁を備え、
前記半導体デバイスは、さらに、
前記隆起領域の前記第1及び第2側壁上の、及び前記隆起領域に隣接する前記第1層の前記上表面上の前記第1導電型とは異なる第2導電型の半導体材料と、
前記隆起領域の前記上表面上の、前記第1導電型の半導体材料の第3層を備え、
前記隆起領域は、5×1016から1×1018cm−3までのドーパント濃度を有し、
前記隆起領域の前記上表面と前記第1層の前記表面との間の距離は、0.1から2μmであり、
前記隆起領域の前記表面に対して平行な方向における、前記隆起領域の前記第1側壁と前記第2側壁との間の最小距離は、0.1から0.5μmであることを特徴とする、半導体デバイス。 - 前記第1導電型の半導体材料の前記第1層は、5から15μmの厚さを有し、4×1015から2×1016cm−3のドーピング濃度を有することを特徴とする、請求項1記載の半導体デバイス。
- 前記基板は、100から500μmの厚さと、1×1019から5×1019cm−3のドーピング濃度を有することを特徴とする、請求項1記載の半導体デバイス。
- 前記第1導電型の半導体材料の第3層は、0.1から1.0μmの厚さと、1×1019から1×1020cm−3のドーピング濃度を有することを特徴とする、請求項1記載の半導体デバイス。
- 前記第2導電型の前記半導体材料は、5×1018から1×1020cm−3のドーピング濃度を有することを特徴とする、請求項1記載の半導体デバイス。
- 前記基板と前記第1層との間に、前記第1導電型の半導体材料の第4層をさらに備えることを特徴とする、請求項1記載の半導体デバイス。
- 前記第1導電型の半導体材料の前記第4層は、0.1から1.0μmの厚さと、5×1017から5×1018cm−3のドーピング濃度を有することを特徴とする、請求項6記載の半導体デバイス。
- 前記デバイスは、複数の隆起領域を備え、前記複数の隆起領域は、引き伸ばされ、フィンガーとして距離をあけた関係で配されることを特徴とする、請求項1記載の半導体デバイス。
- 前記第1導電型の前記半導体材料は、n−型半導体材料であり、前記第2導電型の前記半導体材料は、p−型半導体材料であることを特徴とする、請求項1記載の半導体デバイス。
- 前記半導体材料は、広バンドギャップ半導体材料であることを特徴とする、請求項1記載の半導体デバイス。
- 前記半導体材料は、SiCであることを特徴とする、請求項1記載の半導体デバイス。
- 前記デバイスは、接合型電界効果トランジスタ(JFET)、静電誘導トランジスタ(SITs)、接合型電界効果サイリスタ又はJFET電流制御器であることを特徴とする、請求項1記載の半導体デバイス。
- 前記デバイスは、2.4MV/cm以下の与えられた電界で、非パンチスルー挙動を示すことを特徴とする、請求項1記載のデバイス。
- 前記第2導電型の半導体材料の上に第1ゲートコンタクトをさらに備え、前記第2導電型の半導体材料は、前記隆起領域の前記第1側壁上、及び前記第2側壁に隣接する前記第1層の前記上表面上に存し、
前記半導体デバイスは、さらに、
前記第2導電型の前記半導体材料の上に第2ゲートコンタクトを備え、前記第2導電型の前記半導体材料は、前記隆起領域の前記第2側壁上、及び前記第2側壁に隣接する前記第1層の前記表面上に存し、
前記半導体デバイスは、さらに、
前記第3層上のソースコンタクトと、
前記第1層の反対側の前記基板層上のドレインコンタクトを備えることを特徴とする、請求項1記載の半導体デバイス。 - 請求項14記載の前記半導体デバイスを備える回路。
- 前記第1及び第2ゲートコンタクトは、電気的に連結されることを特徴とする、請求項15記載の回路。
- 前記第1及び第2ゲートコンタクトは、電気的に連結されていないことを特徴とする、請求項15記載の回路。
- 請求項14記載の第1及び第2半導体デバイスを備える回路であって、前記第1デバイスの前記ソースコンタクトは、前記第2デバイスのゲートコンタクトに電気的に連結されることを特徴とする、回路。
- 前記回路は集積回路であることを特徴とする、請求項15記載の回路。
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US12/170,599 US7994548B2 (en) | 2008-05-08 | 2008-07-10 | Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making |
US12/170,599 | 2008-07-10 | ||
PCT/US2009/050021 WO2010006107A2 (en) | 2008-07-10 | 2009-07-09 | Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making |
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US (1) | US7994548B2 (ja) |
EP (1) | EP2319083A4 (ja) |
JP (1) | JP2011527836A (ja) |
KR (1) | KR101268171B1 (ja) |
CN (1) | CN102150275A (ja) |
AU (1) | AU2009268539A1 (ja) |
CA (1) | CA2729194A1 (ja) |
NZ (1) | NZ590751A (ja) |
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US20090278137A1 (en) | 2009-11-12 |
US7994548B2 (en) | 2011-08-09 |
TW201005944A (en) | 2010-02-01 |
KR101268171B1 (ko) | 2013-05-27 |
WO2010006107A2 (en) | 2010-01-14 |
EP2319083A4 (en) | 2013-11-13 |
CN102150275A (zh) | 2011-08-10 |
EP2319083A2 (en) | 2011-05-11 |
WO2010006107A3 (en) | 2010-03-18 |
CA2729194A1 (en) | 2010-01-14 |
NZ590751A (en) | 2013-11-29 |
KR20110029167A (ko) | 2011-03-22 |
TWI447911B (zh) | 2014-08-01 |
AU2009268539A1 (en) | 2010-01-14 |
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