JP2011526239A5 - - Google Patents

Download PDF

Info

Publication number
JP2011526239A5
JP2011526239A5 JP2011516725A JP2011516725A JP2011526239A5 JP 2011526239 A5 JP2011526239 A5 JP 2011526239A5 JP 2011516725 A JP2011516725 A JP 2011516725A JP 2011516725 A JP2011516725 A JP 2011516725A JP 2011526239 A5 JP2011526239 A5 JP 2011526239A5
Authority
JP
Japan
Prior art keywords
silicon
fine particles
particles
silane
larger
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011516725A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011526239A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2009/048916 external-priority patent/WO2009158650A1/en
Publication of JP2011526239A publication Critical patent/JP2011526239A/ja
Publication of JP2011526239A5 publication Critical patent/JP2011526239A5/ja
Pending legal-status Critical Current

Links

JP2011516725A 2008-06-27 2009-06-26 シリコン微粒子のリサイクルにより多結晶シリコン反応炉の生産性を向上させる方法 Pending JP2011526239A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US7637108P 2008-06-27 2008-06-27
US61/076,371 2008-06-27
PCT/US2009/048916 WO2009158650A1 (en) 2008-06-27 2009-06-26 Methods for increasing polycrystalline silicon reactor productivity by recycle of silicon fines

Publications (2)

Publication Number Publication Date
JP2011526239A JP2011526239A (ja) 2011-10-06
JP2011526239A5 true JP2011526239A5 (enExample) 2012-08-09

Family

ID=41066376

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011516725A Pending JP2011526239A (ja) 2008-06-27 2009-06-26 シリコン微粒子のリサイクルにより多結晶シリコン反応炉の生産性を向上させる方法

Country Status (7)

Country Link
US (1) US20090324819A1 (enExample)
EP (1) EP2310317A1 (enExample)
JP (1) JP2011526239A (enExample)
KR (1) KR20110037967A (enExample)
CN (1) CN102076607A (enExample)
TW (1) TW201006950A (enExample)
WO (1) WO2009158650A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100061911A1 (en) * 2008-08-04 2010-03-11 Hariharan Alleppey V METHOD TO CONVERT SILICON POWDER TO HIGH PURITY POLYSILICON THROUGH INTERMEDIATE SiF4
CN103787336B (zh) 2008-09-16 2016-09-14 储晞 生产高纯颗粒硅的方法
JP5956461B2 (ja) 2010-12-20 2016-07-27 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッドMemc Electronic Materials,Incorporated 不均化操作を伴う実質的に閉ループの方法における多結晶シリコンの製造
US9156705B2 (en) 2010-12-23 2015-10-13 Sunedison, Inc. Production of polycrystalline silicon by the thermal decomposition of dichlorosilane in a fluidized bed reactor
CN103842070B (zh) 2011-09-30 2017-07-21 Memc电子材料有限公司 通过使硅烷在流化床反应器中热分解而制备多晶硅
WO2013049325A1 (en) 2011-09-30 2013-04-04 Memc Electronic Materials, Inc. Production of polycrystalline silicon by the thermal decomposition of silane in a fluidized bed reactor
JP2014001096A (ja) * 2012-06-18 2014-01-09 Shin Etsu Chem Co Ltd 多結晶シリコンの結晶配向度評価方法、多結晶シリコン棒の選択方法、多結晶シリコン棒、多結晶シリコン塊、および、単結晶シリコンの製造方法
WO2014106090A1 (en) 2012-12-31 2014-07-03 Sunedison, Inc. Improving operation of fluidized bed reactors by optimizing temperature gradients via particle size distribution control
US10252916B2 (en) 2014-09-04 2019-04-09 Corner Star Limited Methods for separating halosilanes
CN114132933A (zh) * 2021-11-02 2022-03-04 江苏中能硅业科技发展有限公司 一种颗粒硅生产方法和系统

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3012861A (en) * 1960-01-15 1961-12-12 Du Pont Production of silicon
US3012862A (en) * 1960-08-16 1961-12-12 Du Pont Silicon production
US4818495A (en) * 1982-11-05 1989-04-04 Union Carbide Corporation Reactor for fluidized bed silane decomposition
US4820587A (en) * 1986-08-25 1989-04-11 Ethyl Corporation Polysilicon produced by a fluid bed process
US4784840A (en) * 1986-08-25 1988-11-15 Ethyl Corporation Polysilicon fluid bed process and product
JPH01239013A (ja) * 1988-03-22 1989-09-25 Nkk Corp 多結晶シリコンの製造方法及び装置
CA2038175A1 (en) * 1990-04-02 1991-10-03 Albemarle Corporation Polysilicon and process therefor
DE10063862A1 (de) * 2000-12-21 2002-07-11 Solarworld Ag Verfahren zur Herstellung von hochreinem, granularen Silizium
DE10124848A1 (de) * 2001-05-22 2002-11-28 Solarworld Ag Verfahren zur Herstellung von hochreinem, granularem Silizium in einer Wirbelschicht
US7291222B2 (en) * 2004-06-18 2007-11-06 Memc Electronic Materials, Inc. Systems and methods for measuring and reducing dust in granular material
US20060105105A1 (en) * 2004-11-12 2006-05-18 Memc Electronic Materials, Inc. High purity granular silicon and method of manufacturing the same

Similar Documents

Publication Publication Date Title
JP2011526239A5 (enExample)
WO2012002995A3 (en) Thin films and methods of making them using cyclohexasilane
PL2250298T3 (pl) Sposób i system do osadzania metalu lub metaloidu na nanorurkach węglowych
MY183844A (en) Zeolite film and process for producing zeolite film
EP2392547A3 (en) Method of graphene manufacturing
JP2015520671A5 (enExample)
GB201318578D0 (en) Graphene nanoribbons and carbon nanotubes fabricated from sic fins or nanowire templates
JP2015512936A5 (enExample)
JP2013212952A5 (enExample)
EA201070774A1 (ru) Цеолит типа lsx с контролируемой гранулометрией
JP2012104515A5 (enExample)
JP2012505069A5 (enExample)
JP2012099494A5 (enExample)
MY162486A (en) Process and plant for preparing trichlorosilane
JP2011530002A5 (enExample)
WO2015038267A3 (en) Graphene synthesis by suppressing evaporative substrate loss during low pressure chemical vapor deposition
MY159243A (en) Single crystal diamond material
JP2011190124A5 (enExample)
JP2011515204A5 (enExample)
WO2010086600A3 (en) Providing gas for use in forming a carbon nanomaterial
MY170523A (en) Process for depositing polycrystalline silicon
JP2009283922A5 (enExample)
CN103541000B (zh) 一种制备氮化硼单晶的装置及方法
JP2013100220A5 (enExample)
JP2015131748A5 (enExample)