KR20110037967A - 실리콘 미분의 재순환에 의한 다결정 실리콘 반응로 생산성 향상 방법 - Google Patents
실리콘 미분의 재순환에 의한 다결정 실리콘 반응로 생산성 향상 방법 Download PDFInfo
- Publication number
- KR20110037967A KR20110037967A KR1020107029115A KR20107029115A KR20110037967A KR 20110037967 A KR20110037967 A KR 20110037967A KR 1020107029115 A KR1020107029115 A KR 1020107029115A KR 20107029115 A KR20107029115 A KR 20107029115A KR 20110037967 A KR20110037967 A KR 20110037967A
- Authority
- KR
- South Korea
- Prior art keywords
- silicon
- reaction chamber
- dust
- discharged
- particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 82
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 53
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims description 44
- 229910052710 silicon Inorganic materials 0.000 title claims description 38
- 239000010703 silicon Substances 0.000 title claims description 38
- 238000004064 recycling Methods 0.000 title description 7
- 239000011856 silicon-based particle Substances 0.000 claims abstract description 36
- 150000003377 silicon compounds Chemical class 0.000 claims abstract description 18
- 230000008569 process Effects 0.000 claims description 37
- 239000002245 particle Substances 0.000 claims description 30
- 238000000151 deposition Methods 0.000 claims description 4
- 238000001914 filtration Methods 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims 2
- 239000007924 injection Substances 0.000 claims 2
- 230000002000 scavenging effect Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 description 56
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 18
- 238000005243 fluidization Methods 0.000 description 17
- 229910000077 silane Inorganic materials 0.000 description 17
- 239000000843 powder Substances 0.000 description 12
- 229920005591 polysilicon Polymers 0.000 description 9
- 238000000926 separation method Methods 0.000 description 9
- 239000000047 product Substances 0.000 description 7
- 239000012159 carrier gas Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 239000000428 dust Substances 0.000 description 5
- 239000012530 fluid Substances 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 238000005094 computer simulation Methods 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 4
- 239000005052 trichlorosilane Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000839 emulsion Substances 0.000 description 3
- -1 for example Chemical class 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 238000000197 pyrolysis Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- QYKABQMBXCBINA-UHFFFAOYSA-N 4-(oxan-2-yloxy)benzaldehyde Chemical compound C1=CC(C=O)=CC=C1OC1OCCCC1 QYKABQMBXCBINA-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 241000237858 Gastropoda Species 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical group 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 235000020030 perry Nutrition 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US7637108P | 2008-06-27 | 2008-06-27 | |
| US61/076,371 | 2008-06-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20110037967A true KR20110037967A (ko) | 2011-04-13 |
Family
ID=41066376
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020107029115A Withdrawn KR20110037967A (ko) | 2008-06-27 | 2009-06-26 | 실리콘 미분의 재순환에 의한 다결정 실리콘 반응로 생산성 향상 방법 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20090324819A1 (enExample) |
| EP (1) | EP2310317A1 (enExample) |
| JP (1) | JP2011526239A (enExample) |
| KR (1) | KR20110037967A (enExample) |
| CN (1) | CN102076607A (enExample) |
| TW (1) | TW201006950A (enExample) |
| WO (1) | WO2009158650A1 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100061911A1 (en) * | 2008-08-04 | 2010-03-11 | Hariharan Alleppey V | METHOD TO CONVERT SILICON POWDER TO HIGH PURITY POLYSILICON THROUGH INTERMEDIATE SiF4 |
| CN103787336B (zh) | 2008-09-16 | 2016-09-14 | 储晞 | 生产高纯颗粒硅的方法 |
| JP5956461B2 (ja) | 2010-12-20 | 2016-07-27 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッドMemc Electronic Materials,Incorporated | 不均化操作を伴う実質的に閉ループの方法における多結晶シリコンの製造 |
| US9156705B2 (en) | 2010-12-23 | 2015-10-13 | Sunedison, Inc. | Production of polycrystalline silicon by the thermal decomposition of dichlorosilane in a fluidized bed reactor |
| CN103842070B (zh) | 2011-09-30 | 2017-07-21 | Memc电子材料有限公司 | 通过使硅烷在流化床反应器中热分解而制备多晶硅 |
| WO2013049325A1 (en) | 2011-09-30 | 2013-04-04 | Memc Electronic Materials, Inc. | Production of polycrystalline silicon by the thermal decomposition of silane in a fluidized bed reactor |
| JP2014001096A (ja) * | 2012-06-18 | 2014-01-09 | Shin Etsu Chem Co Ltd | 多結晶シリコンの結晶配向度評価方法、多結晶シリコン棒の選択方法、多結晶シリコン棒、多結晶シリコン塊、および、単結晶シリコンの製造方法 |
| WO2014106090A1 (en) | 2012-12-31 | 2014-07-03 | Sunedison, Inc. | Improving operation of fluidized bed reactors by optimizing temperature gradients via particle size distribution control |
| US10252916B2 (en) | 2014-09-04 | 2019-04-09 | Corner Star Limited | Methods for separating halosilanes |
| CN114132933A (zh) * | 2021-11-02 | 2022-03-04 | 江苏中能硅业科技发展有限公司 | 一种颗粒硅生产方法和系统 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3012861A (en) * | 1960-01-15 | 1961-12-12 | Du Pont | Production of silicon |
| US3012862A (en) * | 1960-08-16 | 1961-12-12 | Du Pont | Silicon production |
| US4818495A (en) * | 1982-11-05 | 1989-04-04 | Union Carbide Corporation | Reactor for fluidized bed silane decomposition |
| US4820587A (en) * | 1986-08-25 | 1989-04-11 | Ethyl Corporation | Polysilicon produced by a fluid bed process |
| US4784840A (en) * | 1986-08-25 | 1988-11-15 | Ethyl Corporation | Polysilicon fluid bed process and product |
| JPH01239013A (ja) * | 1988-03-22 | 1989-09-25 | Nkk Corp | 多結晶シリコンの製造方法及び装置 |
| CA2038175A1 (en) * | 1990-04-02 | 1991-10-03 | Albemarle Corporation | Polysilicon and process therefor |
| DE10063862A1 (de) * | 2000-12-21 | 2002-07-11 | Solarworld Ag | Verfahren zur Herstellung von hochreinem, granularen Silizium |
| DE10124848A1 (de) * | 2001-05-22 | 2002-11-28 | Solarworld Ag | Verfahren zur Herstellung von hochreinem, granularem Silizium in einer Wirbelschicht |
| US7291222B2 (en) * | 2004-06-18 | 2007-11-06 | Memc Electronic Materials, Inc. | Systems and methods for measuring and reducing dust in granular material |
| US20060105105A1 (en) * | 2004-11-12 | 2006-05-18 | Memc Electronic Materials, Inc. | High purity granular silicon and method of manufacturing the same |
-
2009
- 2009-06-26 EP EP09771181A patent/EP2310317A1/en not_active Ceased
- 2009-06-26 US US12/492,706 patent/US20090324819A1/en not_active Abandoned
- 2009-06-26 KR KR1020107029115A patent/KR20110037967A/ko not_active Withdrawn
- 2009-06-26 WO PCT/US2009/048916 patent/WO2009158650A1/en not_active Ceased
- 2009-06-26 CN CN2009801245747A patent/CN102076607A/zh active Pending
- 2009-06-26 JP JP2011516725A patent/JP2011526239A/ja active Pending
- 2009-06-29 TW TW098121897A patent/TW201006950A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| TW201006950A (en) | 2010-02-16 |
| JP2011526239A (ja) | 2011-10-06 |
| WO2009158650A1 (en) | 2009-12-30 |
| US20090324819A1 (en) | 2009-12-31 |
| EP2310317A1 (en) | 2011-04-20 |
| CN102076607A (zh) | 2011-05-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6038201B2 (ja) | 反応炉壁へのシリコンの析出を低減する流動層反応炉システム及び方法 | |
| KR20110037967A (ko) | 실리콘 미분의 재순환에 의한 다결정 실리콘 반응로 생산성 향상 방법 | |
| US8828324B2 (en) | Fluidized bed reactor systems and distributors for use in same | |
| US7927984B2 (en) | Silicon production with a fluidized bed reactor utilizing tetrachlorosilane to reduce wall deposition | |
| JP4971240B2 (ja) | 高純度の多結晶性シリコン顆粒を連続的に製造する方法 | |
| JP5956461B2 (ja) | 不均化操作を伴う実質的に閉ループの方法における多結晶シリコンの製造 | |
| JP5946835B2 (ja) | 実質的に閉ループの方法およびシステムにおける多結晶シリコンの製造 | |
| US10189714B2 (en) | Operation of fluidized bed reactors by optimizing temperature gradients via particle size distribution control | |
| JPH0231833A (ja) | 流動床における内芯加熱法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20101224 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |