JP2011522427A - オプトエレクトロニクス部品およびその製造方法 - Google Patents

オプトエレクトロニクス部品およびその製造方法 Download PDF

Info

Publication number
JP2011522427A
JP2011522427A JP2011511971A JP2011511971A JP2011522427A JP 2011522427 A JP2011522427 A JP 2011522427A JP 2011511971 A JP2011511971 A JP 2011511971A JP 2011511971 A JP2011511971 A JP 2011511971A JP 2011522427 A JP2011522427 A JP 2011522427A
Authority
JP
Japan
Prior art keywords
layer
method step
semiconductor layer
mesa
structuring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011511971A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011522427A5 (OSRAM
Inventor
ステファン カイザー
アンドレアス プルーセル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of JP2011522427A publication Critical patent/JP2011522427A/ja
Publication of JP2011522427A5 publication Critical patent/JP2011522427A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
JP2011511971A 2008-06-06 2009-06-03 オプトエレクトロニクス部品およびその製造方法 Pending JP2011522427A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102008027041.5 2008-06-06
DE102008027041 2008-06-06
DE102008050538.2 2008-10-06
DE102008050538.2A DE102008050538B4 (de) 2008-06-06 2008-10-06 Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
PCT/DE2009/000781 WO2009146689A1 (de) 2008-06-06 2009-06-03 Optoelektronisches bauelement und verfahren zu dessen herstellung

Publications (2)

Publication Number Publication Date
JP2011522427A true JP2011522427A (ja) 2011-07-28
JP2011522427A5 JP2011522427A5 (OSRAM) 2012-06-07

Family

ID=41129335

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011511971A Pending JP2011522427A (ja) 2008-06-06 2009-06-03 オプトエレクトロニクス部品およびその製造方法

Country Status (8)

Country Link
US (2) US10128405B2 (OSRAM)
EP (1) EP2289113B1 (OSRAM)
JP (1) JP2011522427A (OSRAM)
KR (1) KR20110019416A (OSRAM)
CN (1) CN102057505B (OSRAM)
DE (1) DE102008050538B4 (OSRAM)
TW (1) TWI396304B (OSRAM)
WO (1) WO2009146689A1 (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016501444A (ja) * 2012-11-23 2016-01-18 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 集合体を半導体チップに個片化する方法および半導体チップ

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008026839A1 (de) 2007-12-20 2009-07-02 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelements in Dünnschichttechnik
DE102009058006B4 (de) 2009-12-11 2022-03-31 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil
TWI420155B (zh) * 2010-06-11 2013-12-21 Au Optronics Corp 光學模組及顯示裝置之製造方法
DE102011054891B4 (de) 2011-10-28 2017-10-19 Osram Opto Semiconductors Gmbh Verfahren zum Durchtrennen eines Halbleiterbauelementverbunds
US8426227B1 (en) 2011-11-18 2013-04-23 LuxVue Technology Corporation Method of forming a micro light emitting diode array
US8573469B2 (en) 2011-11-18 2013-11-05 LuxVue Technology Corporation Method of forming a micro LED structure and array of micro LED structures with an electrically insulating layer
US8518204B2 (en) 2011-11-18 2013-08-27 LuxVue Technology Corporation Method of fabricating and transferring a micro device and an array of micro devices utilizing an intermediate electrically conductive bonding layer
US8349116B1 (en) 2011-11-18 2013-01-08 LuxVue Technology Corporation Micro device transfer head heater assembly and method of transferring a micro device
US9620478B2 (en) 2011-11-18 2017-04-11 Apple Inc. Method of fabricating a micro device transfer head
US9773750B2 (en) 2012-02-09 2017-09-26 Apple Inc. Method of transferring and bonding an array of micro devices
US9548332B2 (en) 2012-04-27 2017-01-17 Apple Inc. Method of forming a micro LED device with self-aligned metallization stack
US9105492B2 (en) 2012-05-08 2015-08-11 LuxVue Technology Corporation Compliant micro device transfer head
US8415768B1 (en) 2012-07-06 2013-04-09 LuxVue Technology Corporation Compliant monopolar micro device transfer head with silicon electrode
US8791530B2 (en) 2012-09-06 2014-07-29 LuxVue Technology Corporation Compliant micro device transfer head with integrated electrode leads
US9162880B2 (en) 2012-09-07 2015-10-20 LuxVue Technology Corporation Mass transfer tool
US9558721B2 (en) 2012-10-15 2017-01-31 Apple Inc. Content-based adaptive refresh schemes for low-power displays
US9236815B2 (en) 2012-12-10 2016-01-12 LuxVue Technology Corporation Compliant micro device transfer head array with metal electrodes
US9923118B2 (en) * 2013-02-25 2018-03-20 Sensor Electronic Technology, Inc. Semiconductor structure with inhomogeneous regions
US9484504B2 (en) 2013-05-14 2016-11-01 Apple Inc. Micro LED with wavelength conversion layer
US9217541B2 (en) 2013-05-14 2015-12-22 LuxVue Technology Corporation Stabilization structure including shear release posts
US9136161B2 (en) 2013-06-04 2015-09-15 LuxVue Technology Corporation Micro pick up array with compliant contact
KR102049635B1 (ko) 2013-06-12 2019-11-28 로히니, 엘엘씨. 피착된 광-생성 소스에 의한 키보드 백라이팅
US8987765B2 (en) 2013-06-17 2015-03-24 LuxVue Technology Corporation Reflective bank structure and method for integrating a light emitting device
US9111464B2 (en) 2013-06-18 2015-08-18 LuxVue Technology Corporation LED display with wavelength conversion layer
US8928021B1 (en) 2013-06-18 2015-01-06 LuxVue Technology Corporation LED light pipe
US9035279B2 (en) 2013-07-08 2015-05-19 LuxVue Technology Corporation Micro device with stabilization post
US9296111B2 (en) 2013-07-22 2016-03-29 LuxVue Technology Corporation Micro pick up array alignment encoder
US9087764B2 (en) 2013-07-26 2015-07-21 LuxVue Technology Corporation Adhesive wafer bonding with controlled thickness variation
US9153548B2 (en) 2013-09-16 2015-10-06 Lux Vue Technology Corporation Adhesive wafer bonding with sacrificial spacers for controlled thickness variation
CN103681995A (zh) * 2013-12-10 2014-03-26 圆融光电科技有限公司 Led芯片制备方法及led芯片
US9367094B2 (en) 2013-12-17 2016-06-14 Apple Inc. Display module and system applications
US9768345B2 (en) 2013-12-20 2017-09-19 Apple Inc. LED with current injection confinement trench
US9450147B2 (en) 2013-12-27 2016-09-20 Apple Inc. LED with internally confined current injection area
US9583466B2 (en) 2013-12-27 2017-02-28 Apple Inc. Etch removal of current distribution layer for LED current confinement
US9542638B2 (en) 2014-02-18 2017-01-10 Apple Inc. RFID tag and micro chip integration design
US9583533B2 (en) 2014-03-13 2017-02-28 Apple Inc. LED device with embedded nanowire LEDs
US9522468B2 (en) 2014-05-08 2016-12-20 Apple Inc. Mass transfer tool manipulator assembly with remote center of compliance
US9318475B2 (en) 2014-05-15 2016-04-19 LuxVue Technology Corporation Flexible display and method of formation with sacrificial release layer
US9741286B2 (en) 2014-06-03 2017-08-22 Apple Inc. Interactive display panel with emitting and sensing diodes
US9624100B2 (en) 2014-06-12 2017-04-18 Apple Inc. Micro pick up array pivot mount with integrated strain sensing elements
US9570002B2 (en) 2014-06-17 2017-02-14 Apple Inc. Interactive display panel with IR diodes
US9425151B2 (en) 2014-06-17 2016-08-23 Apple Inc. Compliant electrostatic transfer head with spring support layer
US9419195B2 (en) 2014-07-27 2016-08-16 SemiLEDs Optoelectronics Co., Ltd. Light emitting diode (LED) die having strap layer and method of fabrication
US9705432B2 (en) 2014-09-30 2017-07-11 Apple Inc. Micro pick up array pivot mount design for strain amplification
US9828244B2 (en) 2014-09-30 2017-11-28 Apple Inc. Compliant electrostatic transfer head with defined cavity
US9478583B2 (en) 2014-12-08 2016-10-25 Apple Inc. Wearable display having an array of LEDs on a conformable silicon substrate
EP3408728A4 (en) 2016-01-15 2019-03-13 Rohinni, LLC DEVICE AND METHOD FOR REAR LIGHTING THROUGH A COVER ON THE DEVICE

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005012188A (ja) * 2003-05-22 2005-01-13 Matsushita Electric Ind Co Ltd 半導体素子の製造方法
WO2007089460A1 (en) * 2006-01-30 2007-08-09 Cree, Inc. Improved external extraction light emitting diode based upon crystallographic faceted surfaces
JP2007200995A (ja) * 2006-01-24 2007-08-09 Rohm Co Ltd 窒化物半導体発光素子
WO2008040315A2 (de) * 2006-09-27 2008-04-10 Osram Opto Semiconductors Gmbh Leuchtdiodenanordnung und verfahren zur herstellung einer solchen
JP2008130799A (ja) * 2006-11-21 2008-06-05 Sharp Corp 半導体発光素子および半導体発光素子の製造方法

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2684239B1 (fr) * 1991-11-27 1994-03-04 France Telecom Procede de fabrication d'un guide d'onde optique planaire entierement a base de polymeres, et son utilisation dans un isolateur optique integre.
DE19640594B4 (de) 1996-10-01 2016-08-04 Osram Gmbh Bauelement
EP2169733B1 (de) * 1997-09-29 2017-07-19 OSRAM Opto Semiconductors GmbH Halbleiterlichtquelle
US20020017652A1 (en) * 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
JP4281232B2 (ja) * 2000-08-31 2009-06-17 ソニー株式会社 光記録媒体とその製造方法
US6537870B1 (en) * 2000-09-29 2003-03-25 Infineon Technologies Ag Method of forming an integrated circuit comprising a self aligned trench
US6740906B2 (en) 2001-07-23 2004-05-25 Cree, Inc. Light emitting diodes including modifications for submount bonding
WO2003019651A2 (en) * 2001-08-24 2003-03-06 Mcnc Research & Development Institute Through-via vertical interconnects, through-via heat sinks and associated fabrication methods
US6784462B2 (en) 2001-12-13 2004-08-31 Rensselaer Polytechnic Institute Light-emitting diode with planar omni-directional reflector
ATE445233T1 (de) 2002-01-28 2009-10-15 Nichia Corp Nitrid-halbleiterbauelement mit einem trägersubstrat und verfahren zu seiner herstellung
DE10245628A1 (de) * 2002-09-30 2004-04-15 Osram Opto Semiconductors Gmbh Elektromagnetische Strahlung emittierender Halbleiterchip und Verfahren zu dessen Herstellung
KR100558134B1 (ko) 2003-04-04 2006-03-10 삼성전기주식회사 질화 갈륨계 반도체 led 소자
JP4279631B2 (ja) 2003-08-20 2009-06-17 三菱化学株式会社 窒化物系半導体素子の製造方法
DE10340271B4 (de) * 2003-08-29 2019-01-17 Osram Opto Semiconductors Gmbh Dünnschicht-Leuchtdiodenchip und Verfahren zu seiner Herstellung
KR100997978B1 (ko) 2004-02-25 2010-12-02 삼성전자주식회사 액정 표시 장치
DE102005016592A1 (de) * 2004-04-14 2005-11-24 Osram Opto Semiconductors Gmbh Leuchtdiodenchip
US7332365B2 (en) * 2004-05-18 2008-02-19 Cree, Inc. Method for fabricating group-III nitride devices and devices fabricated using method
DE102004040277B4 (de) 2004-06-30 2015-07-30 Osram Opto Semiconductors Gmbh Reflektierendes Schichtsystem mit einer Mehrzahl von Schichten zur Aufbringung auf ein III/V-Verbindungshalbleitermaterial
CN100442557C (zh) 2004-06-30 2008-12-10 奥斯兰姆奥普托半导体有限责任公司 用于施加到ⅲ/ⅴ化合物半导体材料上的具有多个层的反射层系统
US7403557B2 (en) 2004-07-27 2008-07-22 Nokia Corporation Apparatus and method for hybrid traffic and pilot signal quality determination of finger lock status of rake receiver correlators
US7737459B2 (en) * 2004-09-22 2010-06-15 Cree, Inc. High output group III nitride light emitting diodes
TWI389334B (zh) 2004-11-15 2013-03-11 Verticle Inc 製造及分離半導體裝置之方法
JP2006190854A (ja) 2005-01-07 2006-07-20 Sony Corp 発光ダイオード
JP2006269807A (ja) 2005-03-24 2006-10-05 Sony Corp 半導体発光ダイオード
DE102005033005A1 (de) * 2005-07-14 2007-01-18 Osram Opto Semiconductors Gmbh Optoelektronischer Chip
US7573074B2 (en) 2006-05-19 2009-08-11 Bridgelux, Inc. LED electrode
JP2011501415A (ja) * 2007-10-11 2011-01-06 ヤオ ジエ フォトディテクタアレイおよび半導体イメージインテンシファイア

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005012188A (ja) * 2003-05-22 2005-01-13 Matsushita Electric Ind Co Ltd 半導体素子の製造方法
JP2007200995A (ja) * 2006-01-24 2007-08-09 Rohm Co Ltd 窒化物半導体発光素子
WO2007089460A1 (en) * 2006-01-30 2007-08-09 Cree, Inc. Improved external extraction light emitting diode based upon crystallographic faceted surfaces
WO2008040315A2 (de) * 2006-09-27 2008-04-10 Osram Opto Semiconductors Gmbh Leuchtdiodenanordnung und verfahren zur herstellung einer solchen
JP2008130799A (ja) * 2006-11-21 2008-06-05 Sharp Corp 半導体発光素子および半導体発光素子の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016501444A (ja) * 2012-11-23 2016-01-18 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 集合体を半導体チップに個片化する方法および半導体チップ
US9728459B2 (en) 2012-11-23 2017-08-08 Osram Opto Semiconductors Gmbh Method for singulating an assemblage into semiconductor chips, and semiconductor chip

Also Published As

Publication number Publication date
EP2289113B1 (de) 2020-04-08
EP2289113A1 (de) 2011-03-02
KR20110019416A (ko) 2011-02-25
US11222992B2 (en) 2022-01-11
US20180331254A1 (en) 2018-11-15
DE102008050538A1 (de) 2010-02-11
TWI396304B (zh) 2013-05-11
CN102057505A (zh) 2011-05-11
TW201006016A (en) 2010-02-01
CN102057505B (zh) 2015-04-22
WO2009146689A1 (de) 2009-12-10
US10128405B2 (en) 2018-11-13
DE102008050538B4 (de) 2022-10-06
US20110210357A1 (en) 2011-09-01

Similar Documents

Publication Publication Date Title
JP2011522427A (ja) オプトエレクトロニクス部品およびその製造方法
JP6099752B2 (ja) オプトエレクトロニクスコンポーネントの製造方法、およびオプトエレクトロニクスコンポーネント
KR101028965B1 (ko) 장벽층을 구비한 발광 다이오드 및 그 제조방법
KR101709781B1 (ko) 솔더 페이스트를 통해 접착된 발광 다이오드를 갖는 발광 다이오드 모듈 및 발광 다이오드
JP2019117956A (ja) 半導体発光デバイスのパッシベーション
US8395179B2 (en) Semiconductor light emitting element and method for manufacturing same
KR20070083214A (ko) 반도체 발광 소자 및 그 제조 방법
JP5146817B2 (ja) 半導体発光素子の製造方法
JP5356292B2 (ja) 半導体発光素子及び半導体発光装置
KR101826950B1 (ko) 솔더 페이스트를 통해 접착된 발광 다이오드를 갖는 발광 다이오드 모듈 및 발광 다이오드
JP6367175B2 (ja) 半導体発光素子
JP2012248807A (ja) 発光素子およびその製造方法
JP2007013093A (ja) 発光ダイオード
KR20150014135A (ko) 발광 다이오드 및 그것을 갖는 발광 다이오드 모듈
US8426292B2 (en) Process for sapphire substrate separation by laser
WO2009005477A1 (en) Separation of semiconductor devices
US8507367B2 (en) Separation of semiconductor devices
CN101626000A (zh) 金属阵列基板、光电元件和发光元件及其制造方法
US8878218B2 (en) Semiconductor light-emitting device and method for manufacturing the same
KR101210391B1 (ko) 광소자 패키지, 광소자 패키지용 기판 및 이의 제조방법
TWI462241B (zh) 高熱傳導性光電元件
JP2006269807A (ja) 半導体発光ダイオード

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20110202

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7426

Effective date: 20110202

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120417

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120417

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130628

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130813

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20131023

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20131030

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140210

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20140401