JP2011520760A5 - - Google Patents

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Publication number
JP2011520760A5
JP2011520760A5 JP2011510687A JP2011510687A JP2011520760A5 JP 2011520760 A5 JP2011520760 A5 JP 2011520760A5 JP 2011510687 A JP2011510687 A JP 2011510687A JP 2011510687 A JP2011510687 A JP 2011510687A JP 2011520760 A5 JP2011520760 A5 JP 2011520760A5
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JP
Japan
Prior art keywords
silicon
reactor chamber
chamber wall
thermal energy
reaction space
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011510687A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011520760A (ja
Filing date
Publication date
Priority claimed from US12/378,250 external-priority patent/US20100047148A1/en
Application filed filed Critical
Publication of JP2011520760A publication Critical patent/JP2011520760A/ja
Publication of JP2011520760A5 publication Critical patent/JP2011520760A5/ja
Pending legal-status Critical Current

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JP2011510687A 2008-05-23 2009-05-20 スカル反応炉 Pending JP2011520760A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US12884708P 2008-05-23 2008-05-23
US61/128,847 2008-05-23
US12/378,250 US20100047148A1 (en) 2008-05-23 2009-02-11 Skull reactor
US12/378,250 2009-02-11
PCT/US2009/044712 WO2009143271A2 (en) 2008-05-23 2009-05-20 Skull reactor

Publications (2)

Publication Number Publication Date
JP2011520760A JP2011520760A (ja) 2011-07-21
JP2011520760A5 true JP2011520760A5 (cg-RX-API-DMAC7.html) 2012-06-07

Family

ID=41340864

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011510687A Pending JP2011520760A (ja) 2008-05-23 2009-05-20 スカル反応炉

Country Status (9)

Country Link
US (1) US20100047148A1 (cg-RX-API-DMAC7.html)
EP (1) EP2294005B1 (cg-RX-API-DMAC7.html)
JP (1) JP2011520760A (cg-RX-API-DMAC7.html)
KR (1) KR20110034608A (cg-RX-API-DMAC7.html)
CN (1) CN102083751A (cg-RX-API-DMAC7.html)
CA (1) CA2725062A1 (cg-RX-API-DMAC7.html)
ES (1) ES2408630T3 (cg-RX-API-DMAC7.html)
TW (1) TW201009136A (cg-RX-API-DMAC7.html)
WO (1) WO2009143271A2 (cg-RX-API-DMAC7.html)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
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US20100189926A1 (en) * 2006-04-14 2010-07-29 Deluca Charles Plasma deposition apparatus and method for making high purity silicon
FR2944520B1 (fr) * 2009-04-17 2011-05-20 Similelt Procede et installation pour la purification du silicium metallurgique.
DE102010015354A1 (de) * 2010-04-13 2011-10-13 Schmid Silicon Technology Gmbh Herstellung eines kristallinen Halbleiterwerkstoffs
MY184998A (en) * 2015-04-29 2021-04-30 1366 Tech Inc Method for maintaining contained volume of molten material from which material is depleted and replenished
CN107973300B (zh) * 2016-10-25 2024-01-05 江苏中能硅业科技发展有限公司 液态硅生产装置及方法
DE102017125723A1 (de) * 2017-04-25 2018-10-25 Eeplasma Gmbh Verfahren und Vorrichtung zum Wachsen eines Einkristalls
DE102019209898A1 (de) * 2019-07-04 2021-01-07 Schmid Silicon Technology Gmbh Vorrichtung und Verfahren zur Bildung von flüssigem Silizium
DE102019211921A1 (de) * 2019-08-08 2021-02-11 Schmid Silicon Technology Gmbh Verfahren und Vorrichtung zur Erzeugung siliziumhaltiger Materialien

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