JP2011517506A - 共有拡散領域を有する積層型画像センサ - Google Patents

共有拡散領域を有する積層型画像センサ Download PDF

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Publication number
JP2011517506A
JP2011517506A JP2011500767A JP2011500767A JP2011517506A JP 2011517506 A JP2011517506 A JP 2011517506A JP 2011500767 A JP2011500767 A JP 2011500767A JP 2011500767 A JP2011500767 A JP 2011500767A JP 2011517506 A JP2011517506 A JP 2011517506A
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Prior art keywords
image sensor
wafer
array
positions
sensor
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JP2011517506A5 (enExample
Inventor
トッド ジェフリー アンダーソン
ジョン ピー マッカーテン
ジョセフ アール サマ
クリスチャン アレクサンドル ティバラス
ジョン トーマス コンプトン
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イーストマン コダック カンパニー
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0037—Arrays characterized by the distribution or form of lenses
    • G02B3/0056—Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/133—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements including elements passing panchromatic light, e.g. filters passing white light
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/135—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on four or more different wavelength filter elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)
JP2011500767A 2008-03-17 2009-02-12 共有拡散領域を有する積層型画像センサ Pending JP2011517506A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/049,579 US7781716B2 (en) 2008-03-17 2008-03-17 Stacked image sensor with shared diffusion regions in respective dropped pixel positions of a pixel array
US12/049,579 2008-03-17
PCT/US2009/000892 WO2009117046A1 (en) 2008-03-17 2009-02-12 Stacked image sensor with shared diffusion regions

Publications (2)

Publication Number Publication Date
JP2011517506A true JP2011517506A (ja) 2011-06-09
JP2011517506A5 JP2011517506A5 (enExample) 2012-03-29

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JP2011500767A Pending JP2011517506A (ja) 2008-03-17 2009-02-12 共有拡散領域を有する積層型画像センサ

Country Status (7)

Country Link
US (1) US7781716B2 (enExample)
EP (1) EP2255389B1 (enExample)
JP (1) JP2011517506A (enExample)
KR (1) KR101533134B1 (enExample)
CN (1) CN101978499B (enExample)
TW (1) TWI502731B (enExample)
WO (1) WO2009117046A1 (enExample)

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WO2019130702A1 (ja) * 2017-12-27 2019-07-04 ソニーセミコンダクタソリューションズ株式会社 撮像装置
JP2021052210A (ja) * 2015-02-27 2021-04-01 ソニー株式会社 半導体装置、固体撮像装置、撮像装置、および電子機器

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EP2255389B1 (en) 2014-01-22
TWI502731B (zh) 2015-10-01
CN101978499A (zh) 2011-02-16
KR101533134B1 (ko) 2015-07-01
CN101978499B (zh) 2013-11-06
US20090230287A1 (en) 2009-09-17
KR20100126749A (ko) 2010-12-02
US7781716B2 (en) 2010-08-24
EP2255389A1 (en) 2010-12-01
WO2009117046A1 (en) 2009-09-24

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