JP2011514668A5 - - Google Patents

Download PDF

Info

Publication number
JP2011514668A5
JP2011514668A5 JP2010546103A JP2010546103A JP2011514668A5 JP 2011514668 A5 JP2011514668 A5 JP 2011514668A5 JP 2010546103 A JP2010546103 A JP 2010546103A JP 2010546103 A JP2010546103 A JP 2010546103A JP 2011514668 A5 JP2011514668 A5 JP 2011514668A5
Authority
JP
Japan
Prior art keywords
argon
ethane
peaks
sccm
noble gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010546103A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011514668A (ja
JP5710272B2 (ja
Filing date
Publication date
Priority claimed from US12/367,741 external-priority patent/US8003957B2/en
Application filed filed Critical
Publication of JP2011514668A publication Critical patent/JP2011514668A/ja
Publication of JP2011514668A5 publication Critical patent/JP2011514668A5/ja
Application granted granted Critical
Publication of JP5710272B2 publication Critical patent/JP5710272B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2010546103A 2008-02-11 2009-02-11 希釈ガスを用いるエタン注入 Expired - Fee Related JP5710272B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US2754508P 2008-02-11 2008-02-11
US61/027,545 2008-02-11
US12/367,741 US8003957B2 (en) 2008-02-11 2009-02-09 Ethane implantation with a dilution gas
US12/367,741 2009-02-09
PCT/US2009/033740 WO2009102754A2 (en) 2008-02-11 2009-02-11 Ethane implantation with a dilution gas

Publications (3)

Publication Number Publication Date
JP2011514668A JP2011514668A (ja) 2011-05-06
JP2011514668A5 true JP2011514668A5 (enExample) 2012-03-01
JP5710272B2 JP5710272B2 (ja) 2015-04-30

Family

ID=40938100

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010546103A Expired - Fee Related JP5710272B2 (ja) 2008-02-11 2009-02-11 希釈ガスを用いるエタン注入

Country Status (6)

Country Link
US (1) US8003957B2 (enExample)
JP (1) JP5710272B2 (enExample)
KR (1) KR101524858B1 (enExample)
CN (1) CN101939823B (enExample)
TW (1) TWI443717B (enExample)
WO (1) WO2009102754A2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8455839B2 (en) * 2010-03-10 2013-06-04 Varian Semiconductor Equipment Associates, Inc. Cleaning of an extraction aperture of an ion source
US8524584B2 (en) 2011-01-20 2013-09-03 Axcelis Technologies, Inc. Carbon implantation process and carbon ion precursor composition
JP5665679B2 (ja) * 2011-07-14 2015-02-04 住友重機械工業株式会社 不純物導入層形成装置及び静電チャック保護方法
US8937003B2 (en) 2011-09-16 2015-01-20 Varian Semiconductor Equipment Associates, Inc. Technique for ion implanting a target
US9196452B2 (en) * 2013-03-08 2015-11-24 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus for carbon ion source head
US9524849B2 (en) 2013-07-18 2016-12-20 Varian Semiconductor Equipment Associates, Inc. Method of improving ion beam quality in an implant system
US9677171B2 (en) * 2014-06-06 2017-06-13 Varian Semiconductor Equipment Associates, Inc. Method of improving ion beam quality in a non-mass-analyzed ion implantation system
CN113936984A (zh) * 2021-09-14 2022-01-14 长江存储科技有限责任公司 碳离子产生方法、组件及离子注入设备

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4264642A (en) * 1978-12-11 1981-04-28 Lord Corporation Deposition of thin film organic coatings by ion implantation
US4283249A (en) * 1979-05-02 1981-08-11 International Business Machines Corporation Reactive ion etching
US4474827A (en) * 1982-07-08 1984-10-02 Ferralli Michael W Ion induced thin surface coating
US6183843B1 (en) * 1991-12-06 2001-02-06 Raytheon Company Method for producing low reflectance diamond and products therefor
US5346600A (en) * 1992-08-14 1994-09-13 Hughes Aircraft Company Plasma-enhanced magnetron-sputtered deposition of materials
US5558718A (en) * 1994-04-08 1996-09-24 The Regents, University Of California Pulsed source ion implantation apparatus and method
JP3342201B2 (ja) * 1994-11-14 2002-11-05 独立行政法人産業技術総合研究所 光触媒用酸化チタン含有膜被覆基体及びその製造方法
US5693376A (en) * 1995-06-23 1997-12-02 Wisconsin Alumni Research Foundation Method for plasma source ion implantation and deposition for cylindrical surfaces
US6090456A (en) * 1997-05-03 2000-07-18 The United States Of America As Represented By The Secretary Of The Air Force Process for large area deposition of diamond-like carbon films
US6048411A (en) * 1997-05-12 2000-04-11 Silicon Genesis Corporation Silicon-on-silicon hybrid wafer assembly
US7154153B1 (en) * 1997-07-29 2006-12-26 Micron Technology, Inc. Memory device
JP2000064025A (ja) * 1998-06-11 2000-02-29 Mitsubishi Heavy Ind Ltd 炭窒化ホウ素膜の製造方法
JP2000204181A (ja) * 1999-01-11 2000-07-25 Sony Corp 樹脂の表面硬化方法及び表面硬化樹脂、並びにその製造装置
JP2000103884A (ja) * 1998-09-30 2000-04-11 Sony Corp プラスチックスの表面改質方法およびこの表面改質方法を用いて改質されたプラスチックス
US6399489B1 (en) * 1999-11-01 2002-06-04 Applied Materials, Inc. Barrier layer deposition using HDP-CVD
JP4416259B2 (ja) * 2000-03-24 2010-02-17 キヤノンアネルバ株式会社 質量分析装置
JP3865570B2 (ja) * 2000-06-16 2007-01-10 伊藤光学工業株式会社 プラズマ加工法
US7137354B2 (en) * 2000-08-11 2006-11-21 Applied Materials, Inc. Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage
JP4866534B2 (ja) * 2001-02-12 2012-02-01 エーエスエム アメリカ インコーポレイテッド 半導体膜の改良された堆積方法
WO2002082492A1 (en) * 2001-04-03 2002-10-17 Varian Semiconductor Equipment Associates, Inc. Helium ion generation method and apparatus
US6936505B2 (en) * 2003-05-20 2005-08-30 Intel Corporation Method of forming a shallow junction
JP4319556B2 (ja) * 2004-01-28 2009-08-26 浩史 滝川 プラズマ生成装置
US7015108B2 (en) * 2004-02-26 2006-03-21 Intel Corporation Implanting carbon to form P-type drain extensions
GB2412488B (en) * 2004-03-26 2007-03-28 Applied Materials Inc Ion sources
US20050274128A1 (en) * 2004-06-10 2005-12-15 Genesis Cryopump with enhanced hydrogen pumping
JP2006308728A (ja) * 2005-04-27 2006-11-09 Sony Corp 光学部品
JP4883601B2 (ja) * 2005-07-04 2012-02-22 国立大学法人豊橋技術科学大学 プラズマ処理装置
US7312148B2 (en) * 2005-08-08 2007-12-25 Applied Materials, Inc. Copper barrier reflow process employing high speed optical annealing
KR101297917B1 (ko) 2005-08-30 2013-08-27 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 대안적인 불화 붕소 전구체를 이용한 붕소 이온 주입 방법,및 주입을 위한 대형 수소화붕소의 형성 방법
KR101455404B1 (ko) * 2005-12-09 2014-10-27 세미이큅, 인코포레이티드 탄소 클러스터의 주입에 의한 반도체 디바이스의 제조를위한 시스템 및 방법
US20070178678A1 (en) 2006-01-28 2007-08-02 Varian Semiconductor Equipment Associates, Inc. Methods of implanting ions and ion sources used for same

Similar Documents

Publication Publication Date Title
JP2011514668A5 (enExample)
JP2010514554A5 (enExample)
JP2015520671A5 (enExample)
ATE484350T1 (de) Verfahren zur herstellung von übergangsmetallnanopartikeln
EA201390679A1 (ru) Аппарат электрической очистки
EP1951933A4 (en) CONTINUOUS ELECTROCHEMICAL DC REDUCTION OF CARBON DIOXIDE
PE20110916A1 (es) Composiciones de cloruro de bromo para remover el mercurio de las emisiones producidas durante la combustion de combustibles
JP2011504157A5 (enExample)
EA201300384A1 (ru) Способ использования диоксида углерода при добыче пластовых залежей
GB201006327D0 (en) Gas treatment methods
EP2096659B8 (en) Electron emission source, electric device using the same, and method of manufacturing the electron emission source
WO2009118162A8 (de) Elektrolysezelle zur chlorwasserstoffelektrolyse
ATE469719T1 (de) VERFAHREN ZUM TANDEMSCHWEIßEN
JP2009531381A5 (enExample)
BRPI0920339A2 (pt) fonte de plasma gasoso de baixa potência.
PL1958724T3 (pl) Sposób spajania łukiem elektrycznym z zastosowaniem prądu przemiennego
JP2012162444A5 (enExample)
JP2013501511A5 (enExample)
EP2239227A4 (en) MEDIUM FOR SYNTHESIS OF CARBON NANOTUBES
SG132576A1 (en) Plasma etching of tapered structures
EP3946715A4 (en) HIGH EFFICIENCY OXYGEN AND HYDROGEN GENERATING SYSTEM AND METHOD
EP2158965A4 (en) PROCESS FOR PHOTO-MXIDATION OF CARBON MONOXIDE TO CARBON DIOXIDE IN THE GAS PHASE
JP2014003023A5 (enExample)
JP2012079933A5 (enExample)
BR112014014962A2 (pt) método, anel & mancal