JP2014003023A5 - - Google Patents
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- Publication number
- JP2014003023A5 JP2014003023A5 JP2013128061A JP2013128061A JP2014003023A5 JP 2014003023 A5 JP2014003023 A5 JP 2014003023A5 JP 2013128061 A JP2013128061 A JP 2013128061A JP 2013128061 A JP2013128061 A JP 2013128061A JP 2014003023 A5 JP2014003023 A5 JP 2014003023A5
- Authority
- JP
- Japan
- Prior art keywords
- carbon
- volume
- gas
- fluorine
- gas composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 claims 39
- 239000000203 mixture Substances 0.000 claims 32
- 229910052799 carbon Inorganic materials 0.000 claims 26
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 22
- 229910052731 fluorine Inorganic materials 0.000 claims 12
- 239000011737 fluorine Substances 0.000 claims 12
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 11
- 239000002019 doping agent Substances 0.000 claims 4
- -1 carbon ions Chemical class 0.000 claims 3
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 150000001722 carbon compounds Chemical class 0.000 claims 2
- 238000002513 implantation Methods 0.000 claims 2
- 238000002347 injection Methods 0.000 claims 2
- 239000007924 injection Substances 0.000 claims 2
- 150000002500 ions Chemical class 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 125000004429 atom Chemical group 0.000 claims 1
- 229910002091 carbon monoxide Inorganic materials 0.000 claims 1
- 125000001153 fluoro group Chemical group F* 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/527,684 | 2012-06-20 | ||
| US13/527,684 US8603363B1 (en) | 2012-06-20 | 2012-06-20 | Compositions for extending ion source life and improving ion source performance during carbon implantation |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014003023A JP2014003023A (ja) | 2014-01-09 |
| JP2014003023A5 true JP2014003023A5 (enExample) | 2014-05-22 |
| JP5684860B2 JP5684860B2 (ja) | 2015-03-18 |
Family
ID=48628302
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013128061A Expired - Fee Related JP5684860B2 (ja) | 2012-06-20 | 2013-06-19 | 炭素注入中のイオン源寿命を延長し、イオン源性能を向上するための組成物 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8603363B1 (enExample) |
| EP (1) | EP2677058A1 (enExample) |
| JP (1) | JP5684860B2 (enExample) |
| KR (1) | KR101509312B1 (enExample) |
| CN (1) | CN103515173B (enExample) |
| TW (1) | TWI490163B (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11264228B2 (en) * | 2018-10-09 | 2022-03-01 | Savannah River Nuclear Solutions, Llc | Method of making a carbon filament for thermal ionization |
| KR20220032621A (ko) * | 2019-07-18 | 2022-03-15 | 엔테그리스, 아이엔씨. | 아크 챔버 물질들의 혼합물을 갖는 이온 주입 시스템 |
| US11887806B2 (en) | 2022-04-07 | 2024-01-30 | Applied Materials, Inc. | Composite ion source based upon heterogeneous metal-metal fluoride system |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04112441A (ja) * | 1990-08-31 | 1992-04-14 | Toshiba Corp | イオン注入装置及びそのクリーニング方法 |
| US5770098A (en) * | 1993-03-19 | 1998-06-23 | Tokyo Electron Kabushiki Kaisha | Etching process |
| JP3268180B2 (ja) | 1994-11-18 | 2002-03-25 | 株式会社東芝 | イオン発生装置、イオン照射装置、及び半導体装置の製造方法 |
| US5940724A (en) | 1997-04-30 | 1999-08-17 | International Business Machines Corporation | Method for extended ion implanter source lifetime |
| US5943594A (en) | 1997-04-30 | 1999-08-24 | International Business Machines Corporation | Method for extended ion implanter source lifetime with control mechanism |
| US6135128A (en) * | 1998-03-27 | 2000-10-24 | Eaton Corporation | Method for in-process cleaning of an ion source |
| JPH11340321A (ja) * | 1998-05-27 | 1999-12-10 | Sony Corp | 半導体装置およびその製造方法 |
| US6211092B1 (en) * | 1998-07-09 | 2001-04-03 | Applied Materials, Inc. | Counterbore dielectric plasma etch process particularly useful for dual damascene |
| US6215125B1 (en) | 1998-09-16 | 2001-04-10 | International Business Machines Corporation | Method to operate GEF4 gas in hot cathode discharge ion sources |
| US6297163B1 (en) * | 1998-09-30 | 2001-10-02 | Lam Research Corporation | Method of plasma etching dielectric materials |
| US6756600B2 (en) | 1999-02-19 | 2004-06-29 | Advanced Micro Devices, Inc. | Ion implantation with improved ion source life expectancy |
| US6464891B1 (en) * | 1999-03-17 | 2002-10-15 | Veeco Instruments, Inc. | Method for repetitive ion beam processing with a carbon containing ion beam |
| JP3400770B2 (ja) * | 1999-11-16 | 2003-04-28 | 松下電器産業株式会社 | エッチング方法、半導体装置及びその製造方法 |
| US6432318B1 (en) * | 2000-02-17 | 2002-08-13 | Applied Materials, Inc. | Dielectric etch process reducing striations and maintaining critical dimensions |
| WO2001086701A2 (en) * | 2000-05-12 | 2001-11-15 | Tokyo Electron Limited | Method of high selectivity sac etching |
| US6362109B1 (en) * | 2000-06-02 | 2002-03-26 | Applied Materials, Inc. | Oxide/nitride etching having high selectivity to photoresist |
| US6559462B1 (en) | 2000-10-31 | 2003-05-06 | International Business Machines Corporation | Method to reduce downtime while implanting GeF4 |
| GB2412488B (en) * | 2004-03-26 | 2007-03-28 | Applied Materials Inc | Ion sources |
| US6960535B1 (en) * | 2004-05-14 | 2005-11-01 | Sharp Kabushiki Kaisha | Dual damascene etching process |
| US8193096B2 (en) | 2004-12-13 | 2012-06-05 | Novellus Systems, Inc. | High dose implantation strip (HDIS) in H2 base chemistry |
| US7586109B2 (en) | 2007-01-25 | 2009-09-08 | Varian Semiconductor Equipment Associates, Inc. | Technique for improving the performance and extending the lifetime of an ion source with gas dilution |
| US7655931B2 (en) | 2007-03-29 | 2010-02-02 | Varian Semiconductor Equipment Associates, Inc. | Techniques for improving the performance and extending the lifetime of an ion source with gas mixing |
| WO2009102762A2 (en) * | 2008-02-11 | 2009-08-20 | Sweeney Joseph D | Ion source cleaning in semiconductor processing systems |
| JP2010153272A (ja) * | 2008-12-26 | 2010-07-08 | Siltronic Ag | イオン注入方法、及び炭化シリコンの製造方法 |
| JP5595795B2 (ja) * | 2009-06-12 | 2014-09-24 | 東京エレクトロン株式会社 | プラズマ処理装置用の消耗部品の再利用方法 |
| US20110021011A1 (en) | 2009-07-23 | 2011-01-27 | Advanced Technology Materials, Inc. | Carbon materials for carbon implantation |
| US8158445B2 (en) | 2009-11-11 | 2012-04-17 | Samsung Electronics Co., Ltd. | Methods of forming pattern structures and methods of manufacturing semiconductor devices using the same |
| US20110136346A1 (en) | 2009-12-04 | 2011-06-09 | Axcelis Technologies, Inc. | Substantially Non-Oxidizing Plasma Treatment Devices and Processes |
| US9805912B2 (en) * | 2010-11-17 | 2017-10-31 | Axcelis Technologies, Inc. | Hydrogen COGas for carbon implant |
| SG11201404872SA (en) | 2012-02-14 | 2014-09-26 | Advanced Tech Materials | Carbon dopant gas and co-flow for implant beam and source life performance improvement |
| US20130341761A1 (en) * | 2012-06-20 | 2013-12-26 | Ashwini K. Sinha | Methods for extending ion source life and improving ion source performance during carbon implantation |
-
2012
- 2012-06-20 US US13/527,684 patent/US8603363B1/en active Active
-
2013
- 2013-06-12 EP EP20130171623 patent/EP2677058A1/en not_active Ceased
- 2013-06-17 TW TW102121371A patent/TWI490163B/zh not_active IP Right Cessation
- 2013-06-19 JP JP2013128061A patent/JP5684860B2/ja not_active Expired - Fee Related
- 2013-06-19 KR KR20130070274A patent/KR101509312B1/ko active Active
- 2013-06-20 CN CN201310245390.4A patent/CN103515173B/zh active Active
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