JP5684860B2 - 炭素注入中のイオン源寿命を延長し、イオン源性能を向上するための組成物 - Google Patents

炭素注入中のイオン源寿命を延長し、イオン源性能を向上するための組成物 Download PDF

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Publication number
JP5684860B2
JP5684860B2 JP2013128061A JP2013128061A JP5684860B2 JP 5684860 B2 JP5684860 B2 JP 5684860B2 JP 2013128061 A JP2013128061 A JP 2013128061A JP 2013128061 A JP2013128061 A JP 2013128061A JP 5684860 B2 JP5684860 B2 JP 5684860B2
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Japan
Prior art keywords
carbon
gas
volume
fluorine
ion source
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Japanese (ja)
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JP2014003023A (ja
JP2014003023A5 (enExample
Inventor
ケイ．シンハ アシュウィニ
ケイ．シンハ アシュウィニ
エイ．ブラウン ロイド
エイ．ブラウン ロイド
カンポー セルジュ
カンポー セルジュ
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プラクスエア・テクノロジー・インコーポレイテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
JP2013128061A 2012-06-20 2013-06-19 炭素注入中のイオン源寿命を延長し、イオン源性能を向上するための組成物 Expired - Fee Related JP5684860B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/527,684 US8603363B1 (en) 2012-06-20 2012-06-20 Compositions for extending ion source life and improving ion source performance during carbon implantation
US13/527,684 2012-06-20

Publications (3)

Publication Number Publication Date
JP2014003023A JP2014003023A (ja) 2014-01-09
JP2014003023A5 JP2014003023A5 (enExample) 2014-05-22
JP5684860B2 true JP5684860B2 (ja) 2015-03-18

Family

ID=48628302

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013128061A Expired - Fee Related JP5684860B2 (ja) 2012-06-20 2013-06-19 炭素注入中のイオン源寿命を延長し、イオン源性能を向上するための組成物

Country Status (6)

Country Link
US (1) US8603363B1 (enExample)
EP (1) EP2677058A1 (enExample)
JP (1) JP5684860B2 (enExample)
KR (1) KR101509312B1 (enExample)
CN (1) CN103515173B (enExample)
TW (1) TWI490163B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11264228B2 (en) * 2018-10-09 2022-03-01 Savannah River Nuclear Solutions, Llc Method of making a carbon filament for thermal ionization
US11139145B2 (en) 2019-07-18 2021-10-05 Entegris, Inc. Ion implantation system with mixture of arc chamber materials
US11887806B2 (en) 2022-04-07 2024-01-30 Applied Materials, Inc. Composite ion source based upon heterogeneous metal-metal fluoride system

Family Cites Families (31)

* Cited by examiner, † Cited by third party
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JPH04112441A (ja) * 1990-08-31 1992-04-14 Toshiba Corp イオン注入装置及びそのクリーニング方法
US5770098A (en) * 1993-03-19 1998-06-23 Tokyo Electron Kabushiki Kaisha Etching process
JP3268180B2 (ja) 1994-11-18 2002-03-25 株式会社東芝 イオン発生装置、イオン照射装置、及び半導体装置の製造方法
US5943594A (en) 1997-04-30 1999-08-24 International Business Machines Corporation Method for extended ion implanter source lifetime with control mechanism
US5940724A (en) 1997-04-30 1999-08-17 International Business Machines Corporation Method for extended ion implanter source lifetime
US6135128A (en) * 1998-03-27 2000-10-24 Eaton Corporation Method for in-process cleaning of an ion source
JPH11340321A (ja) * 1998-05-27 1999-12-10 Sony Corp 半導体装置およびその製造方法
US6211092B1 (en) * 1998-07-09 2001-04-03 Applied Materials, Inc. Counterbore dielectric plasma etch process particularly useful for dual damascene
US6215125B1 (en) 1998-09-16 2001-04-10 International Business Machines Corporation Method to operate GEF4 gas in hot cathode discharge ion sources
US6297163B1 (en) * 1998-09-30 2001-10-02 Lam Research Corporation Method of plasma etching dielectric materials
US6756600B2 (en) 1999-02-19 2004-06-29 Advanced Micro Devices, Inc. Ion implantation with improved ion source life expectancy
US6464891B1 (en) * 1999-03-17 2002-10-15 Veeco Instruments, Inc. Method for repetitive ion beam processing with a carbon containing ion beam
JP3400770B2 (ja) * 1999-11-16 2003-04-28 松下電器産業株式会社 エッチング方法、半導体装置及びその製造方法
US6432318B1 (en) * 2000-02-17 2002-08-13 Applied Materials, Inc. Dielectric etch process reducing striations and maintaining critical dimensions
JP4852213B2 (ja) * 2000-05-12 2012-01-11 東京エレクトロン株式会社 高選択性のｓａｃのエッチングの方法
US6362109B1 (en) * 2000-06-02 2002-03-26 Applied Materials, Inc. Oxide/nitride etching having high selectivity to photoresist
US6559462B1 (en) 2000-10-31 2003-05-06 International Business Machines Corporation Method to reduce downtime while implanting GeF4
GB2412488B (en) * 2004-03-26 2007-03-28 Applied Materials Inc Ion sources
US6960535B1 (en) * 2004-05-14 2005-11-01 Sharp Kabushiki Kaisha Dual damascene etching process
US8193096B2 (en) 2004-12-13 2012-06-05 Novellus Systems, Inc. High dose implantation strip (HDIS) in H2 base chemistry
US7586109B2 (en) 2007-01-25 2009-09-08 Varian Semiconductor Equipment Associates, Inc. Technique for improving the performance and extending the lifetime of an ion source with gas dilution
US7655931B2 (en) * 2007-03-29 2010-02-02 Varian Semiconductor Equipment Associates, Inc. Techniques for improving the performance and extending the lifetime of an ion source with gas mixing
KR101822779B1 (ko) * 2008-02-11 2018-01-26 엔테그리스, 아이엔씨. 반도체 가공 시스템에서의 이온 공급원 세정법
JP2010153272A (ja) * 2008-12-26 2010-07-08 Siltronic Ag イオン注入方法、及び炭化シリコンの製造方法
JP5595795B2 (ja) * 2009-06-12 2014-09-24 東京エレクトロン株式会社 プラズマ処理装置用の消耗部品の再利用方法
US20110021011A1 (en) 2009-07-23 2011-01-27 Advanced Technology Materials, Inc. Carbon materials for carbon implantation
US8158445B2 (en) 2009-11-11 2012-04-17 Samsung Electronics Co., Ltd. Methods of forming pattern structures and methods of manufacturing semiconductor devices using the same
US20110136346A1 (en) 2009-12-04 2011-06-09 Axcelis Technologies, Inc. Substantially Non-Oxidizing Plasma Treatment Devices and Processes
US9805912B2 (en) * 2010-11-17 2017-10-31 Axcelis Technologies, Inc. Hydrogen COGas for carbon implant
EP3267470A3 (en) 2012-02-14 2018-04-18 Entegris, Inc. Carbon dopant gas and co-flow for implant beam and source life performance improvement
US20130341761A1 (en) * 2012-06-20 2013-12-26 Ashwini K. Sinha Methods for extending ion source life and improving ion source performance during carbon implantation

Also Published As

Publication number Publication date
JP2014003023A (ja) 2014-01-09
EP2677058A1 (en) 2013-12-25
CN103515173B (zh) 2017-04-26
KR20130142955A (ko) 2013-12-30
US20130341568A1 (en) 2013-12-26
TW201414672A (zh) 2014-04-16
TWI490163B (zh) 2015-07-01
US8603363B1 (en) 2013-12-10
CN103515173A (zh) 2014-01-15
KR101509312B1 (ko) 2015-04-07

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