BRPI0920339A2 - fonte de plasma gasoso de baixa potência. - Google Patents

fonte de plasma gasoso de baixa potência.

Info

Publication number
BRPI0920339A2
BRPI0920339A2 BRPI0920339A BRPI0920339A BRPI0920339A2 BR PI0920339 A2 BRPI0920339 A2 BR PI0920339A2 BR PI0920339 A BRPI0920339 A BR PI0920339A BR PI0920339 A BRPI0920339 A BR PI0920339A BR PI0920339 A2 BRPI0920339 A2 BR PI0920339A2
Authority
BR
Brazil
Prior art keywords
low power
plasma source
gas plasma
power gas
source
Prior art date
Application number
BRPI0920339A
Other languages
English (en)
Inventor
Pascal Sortais
Thierry Lamy
Original Assignee
Centre Nat Rech Scient
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre Nat Rech Scient filed Critical Centre Nat Rech Scient
Publication of BRPI0920339A2 publication Critical patent/BRPI0920339A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J61/00—Gas-discharge or vapour-discharge lamps
    • H01J61/02—Details
    • H01J61/04—Electrodes; Screens; Shields
    • H01J61/06—Main electrodes
    • H01J61/067—Main electrodes for low-pressure discharge lamps
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/061—Construction
    • H01J2237/062—Reducing size of gun
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0815—Methods of ionisation
    • H01J2237/0817—Microwaves

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Combustion & Propulsion (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Plasma Technology (AREA)
  • Discharge Lamps And Accessories Thereof (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
BRPI0920339A 2008-10-17 2009-10-16 fonte de plasma gasoso de baixa potência. BRPI0920339A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0857068A FR2937494B1 (fr) 2008-10-17 2008-10-17 Source de plasma gazeux basse puissance
PCT/FR2009/051986 WO2010043831A1 (fr) 2008-10-17 2009-10-16 Source de plasma gazeux basse puissance

Publications (1)

Publication Number Publication Date
BRPI0920339A2 true BRPI0920339A2 (pt) 2016-03-01

Family

ID=40651732

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0920339A BRPI0920339A2 (pt) 2008-10-17 2009-10-16 fonte de plasma gasoso de baixa potência.

Country Status (11)

Country Link
US (1) US8664862B2 (pt)
EP (1) EP2338318B1 (pt)
JP (1) JP5699085B2 (pt)
KR (1) KR20110089849A (pt)
CN (1) CN102187743B (pt)
BR (1) BRPI0920339A2 (pt)
DK (1) DK2338318T3 (pt)
FR (1) FR2937494B1 (pt)
MX (1) MX2011004105A (pt)
PL (1) PL2338318T3 (pt)
WO (1) WO2010043831A1 (pt)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2971261B1 (fr) * 2011-02-08 2013-09-20 Centre Nat Rech Scient Dispositif et procede de pulverisation ionique
KR101492175B1 (ko) * 2011-05-03 2015-02-10 주식회사 엘지화학 양극 활물질 입자의 표면 처리 방법 및 이로부터 형성된 양극 활물질 입자
KR101488659B1 (ko) * 2012-03-06 2015-02-02 코닝정밀소재 주식회사 고주파 가열 장치
CN105636329B (zh) * 2014-10-30 2019-05-17 北京航天长征飞行器研究所 一种用于小空间的等离子体产生装置
JPWO2017126055A1 (ja) * 2016-01-20 2018-02-01 三菱電機株式会社 アンテナ装置
FR3062770B1 (fr) * 2017-02-06 2019-03-29 Polygon Physics Source de plasma
US10522315B2 (en) * 2017-09-08 2019-12-31 Schlumberger Technology Corporation Compact multi antenna based ion sources

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4266167A (en) * 1979-11-09 1981-05-05 Gte Laboratories Incorporated Compact fluorescent light source and method of excitation thereof
JPH07105537B2 (ja) * 1987-09-10 1995-11-13 三菱電機株式会社 プラズマ装置
JPH01241798A (ja) * 1988-03-22 1989-09-26 Matsushita Electric Ind Co Ltd マイクロ波プラズマ装置
JPH02238626A (ja) * 1989-03-13 1990-09-20 Matsushita Electric Ind Co Ltd 絶縁膜作成装置
JPH0479141A (ja) * 1990-07-20 1992-03-12 Sharp Corp イオン注入装置
DE9102438U1 (de) * 1991-03-01 1992-06-25 Röhm GmbH, 6100 Darmstadt Niederdruck-Plasmagenerator
JP3149002B2 (ja) * 1992-12-18 2001-03-26 和夫 杉山 同軸形のマイクロ波プラズマ発生器
JP2641390B2 (ja) * 1994-05-12 1997-08-13 日本電気株式会社 プラズマ処理装置
JPH09120900A (ja) * 1995-10-26 1997-05-06 Micro Denshi Kk マイクロ波を利用したプラズマ発生装置
US5936352A (en) * 1995-11-28 1999-08-10 Nec Corporation Plasma processing apparatus for producing plasma at low electron temperatures
JPH09245658A (ja) * 1996-03-12 1997-09-19 Nissin Electric Co Ltd 永久磁石によるｅｃｒ共鳴を利用するプラズマ生成機構
GB2336240A (en) * 1998-04-09 1999-10-13 Jenton International Limited Apparatus for emitting light
JP3430959B2 (ja) * 1999-03-04 2003-07-28 東京エレクトロン株式会社 平面アンテナ部材、これを用いたプラズマ処理装置及びプラズマ処理方法
JP2001053069A (ja) * 1999-08-10 2001-02-23 Matsushita Electric Ind Co Ltd プラズマ処理方法とプラズマ処理装置
US6356026B1 (en) * 1999-11-24 2002-03-12 Texas Instruments Incorporated Ion implant source with multiple indirectly-heated electron sources
US6888504B2 (en) * 2002-02-01 2005-05-03 Ipr Licensing, Inc. Aperiodic array antenna
US7819981B2 (en) * 2004-10-26 2010-10-26 Advanced Technology Materials, Inc. Methods for cleaning ion implanter components
FR2884043A1 (fr) * 2005-04-01 2006-10-06 Pascal Sortais Source lumineuse alimentee par radiofrequence pour traitements de substances et procede d'utilisation d'une telle source
JP4714868B2 (ja) * 2005-10-20 2011-06-29 国立大学法人静岡大学 放電灯装置
JP4757654B2 (ja) * 2006-02-15 2011-08-24 スタンレー電気株式会社 光源装置
US7976674B2 (en) * 2007-06-13 2011-07-12 Tokyo Electron Limited Embedded multi-inductive large area plasma source

Also Published As

Publication number Publication date
FR2937494A1 (fr) 2010-04-23
EP2338318A1 (fr) 2011-06-29
EP2338318B1 (fr) 2015-04-01
KR20110089849A (ko) 2011-08-09
DK2338318T3 (en) 2015-06-29
US20110260621A1 (en) 2011-10-27
CN102187743A (zh) 2011-09-14
PL2338318T3 (pl) 2015-09-30
JP2012506116A (ja) 2012-03-08
CN102187743B (zh) 2014-09-24
JP5699085B2 (ja) 2015-04-08
WO2010043831A1 (fr) 2010-04-22
FR2937494B1 (fr) 2012-12-07
MX2011004105A (es) 2011-09-06
US8664862B2 (en) 2014-03-04

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Legal Events

Date Code Title Description
B15K Others concerning applications: alteration of classification

Free format text: AS CLASSIFICACOES ANTERIORES ERAM: H05H 1/46 , H01J 27/16 , H01J 61/067 , H01J 37/08

Ipc: H01J 27/16 (1980.01), H01J 37/08 (1968.09), H01J 3

B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B06T Formal requirements before examination [chapter 6.20 patent gazette]
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B16A Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]

Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 16/10/2009, OBSERVADAS AS CONDICOES LEGAIS. (CO) 20 (VINTE) ANOS CONTADOS A PARTIR DE 16/10/2009, OBSERVADAS AS CONDICOES LEGAIS