JP2012079933A5 - - Google Patents

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Publication number
JP2012079933A5
JP2012079933A5 JP2010224031A JP2010224031A JP2012079933A5 JP 2012079933 A5 JP2012079933 A5 JP 2012079933A5 JP 2010224031 A JP2010224031 A JP 2010224031A JP 2010224031 A JP2010224031 A JP 2010224031A JP 2012079933 A5 JP2012079933 A5 JP 2012079933A5
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JP
Japan
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resistance
atmosphere
paragraph
copper
poor
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JP2010224031A
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English (en)
Japanese (ja)
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JP5243510B2 (ja
JP2012079933A (ja
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Priority to JP2010224031A priority Critical patent/JP5243510B2/ja
Priority claimed from JP2010224031A external-priority patent/JP5243510B2/ja
Priority to US13/250,142 priority patent/US8551369B2/en
Publication of JP2012079933A publication Critical patent/JP2012079933A/ja
Publication of JP2012079933A5 publication Critical patent/JP2012079933A5/ja
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Publication of JP5243510B2 publication Critical patent/JP5243510B2/ja
Expired - Fee Related legal-status Critical Current
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JP2010224031A 2010-10-01 2010-10-01 配線材料、配線の製造方法、及びナノ粒子分散液 Expired - Fee Related JP5243510B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2010224031A JP5243510B2 (ja) 2010-10-01 2010-10-01 配線材料、配線の製造方法、及びナノ粒子分散液
US13/250,142 US8551369B2 (en) 2010-10-01 2011-09-30 Wiring material, method of manufacturing wiring, and nano-particle dispersion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010224031A JP5243510B2 (ja) 2010-10-01 2010-10-01 配線材料、配線の製造方法、及びナノ粒子分散液

Publications (3)

Publication Number Publication Date
JP2012079933A JP2012079933A (ja) 2012-04-19
JP2012079933A5 true JP2012079933A5 (enExample) 2012-07-19
JP5243510B2 JP5243510B2 (ja) 2013-07-24

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JP2010224031A Expired - Fee Related JP5243510B2 (ja) 2010-10-01 2010-10-01 配線材料、配線の製造方法、及びナノ粒子分散液

Country Status (2)

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US (1) US8551369B2 (enExample)
JP (1) JP5243510B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6057379B2 (ja) * 2013-01-31 2017-01-11 国立研究開発法人産業技術総合研究所 窒化銅微粒子およびその製造方法
JP6574553B2 (ja) * 2014-06-26 2019-09-11 昭和電工株式会社 導電パターン形成用組成物および導電パターン形成方法
WO2018147136A1 (ja) * 2017-02-08 2018-08-16 三井金属鉱業株式会社 配線構造及びその製造方法、スパッタリングターゲット材、並びに酸化防止方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0179822B1 (ko) * 1995-04-01 1999-04-15 문정환 반도체 장치의 배선 구조 및 그 제조 방법
WO2005122230A1 (ja) 2004-06-07 2005-12-22 Kyushu Institute Of Technology 銅表面の処理方法及び銅パターン配線形成方法、並びに該方法を用いて作成された半導体装置
JP5068925B2 (ja) * 2004-09-03 2012-11-07 Ｊｘ日鉱日石金属株式会社 スパッタリングターゲット
JP3870273B2 (ja) * 2004-12-28 2007-01-17 国立大学法人九州工業大学 銅パターン配線形成方法及び該方法を用いて作成された半導体装置、並びにナノ銅金属粒子
US7314786B1 (en) * 2006-06-16 2008-01-01 International Business Machines Corporation Metal resistor, resistor material and method
JP2008274324A (ja) * 2007-04-26 2008-11-13 Tosoh Corp 組成物及び銅膜の形成方法
KR20110041432A (ko) * 2008-07-11 2011-04-21 미츠이 마이닝 & 스멜팅 콤파니 리미티드 도전성 페이스트용 구리분말 및 도전성 페이스트
JP5778382B2 (ja) 2008-10-22 2015-09-16 東ソー株式会社 金属膜製造用組成物、金属膜の製造方法及び金属粉末の製造方法
JP2010161331A (ja) 2008-12-12 2010-07-22 Hitachi Ltd 電極，電極ペースト及びそれを用いた電子部品
JP5420964B2 (ja) * 2009-04-28 2014-02-19 株式会社神戸製鋼所 表示装置およびこれに用いるＣｕ合金膜

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