JP5710272B2 - 希釈ガスを用いるエタン注入 - Google Patents

希釈ガスを用いるエタン注入 Download PDF

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Publication number
JP5710272B2
JP5710272B2 JP2010546103A JP2010546103A JP5710272B2 JP 5710272 B2 JP5710272 B2 JP 5710272B2 JP 2010546103 A JP2010546103 A JP 2010546103A JP 2010546103 A JP2010546103 A JP 2010546103A JP 5710272 B2 JP5710272 B2 JP 5710272B2
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carbon
species
ion
current
ethane
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JP2010546103A
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English (en)
Japanese (ja)
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JP2011514668A (ja
JP2011514668A5 (enExample
Inventor
アール チェニー クレイグ
アール チェニー クレイグ
アール ドーリー アドルフ
アール ドーリー アドルフ
アール ヘイティム クリストファー
アール ヘイティム クリストファー
エス ペレル アレクザンダー
エス ペレル アレクザンダー
Original Assignee
ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド
ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド
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Publication of JP2011514668A publication Critical patent/JP2011514668A/ja
Publication of JP2011514668A5 publication Critical patent/JP2011514668A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Tubes For Measurement (AREA)
  • Materials For Medical Uses (AREA)
JP2010546103A 2008-02-11 2009-02-11 希釈ガスを用いるエタン注入 Expired - Fee Related JP5710272B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US2754508P 2008-02-11 2008-02-11
US61/027,545 2008-02-11
US12/367,741 US8003957B2 (en) 2008-02-11 2009-02-09 Ethane implantation with a dilution gas
US12/367,741 2009-02-09
PCT/US2009/033740 WO2009102754A2 (en) 2008-02-11 2009-02-11 Ethane implantation with a dilution gas

Publications (3)

Publication Number Publication Date
JP2011514668A JP2011514668A (ja) 2011-05-06
JP2011514668A5 JP2011514668A5 (enExample) 2012-03-01
JP5710272B2 true JP5710272B2 (ja) 2015-04-30

Family

ID=40938100

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010546103A Expired - Fee Related JP5710272B2 (ja) 2008-02-11 2009-02-11 希釈ガスを用いるエタン注入

Country Status (6)

Country Link
US (1) US8003957B2 (enExample)
JP (1) JP5710272B2 (enExample)
KR (1) KR101524858B1 (enExample)
CN (1) CN101939823B (enExample)
TW (1) TWI443717B (enExample)
WO (1) WO2009102754A2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8455839B2 (en) * 2010-03-10 2013-06-04 Varian Semiconductor Equipment Associates, Inc. Cleaning of an extraction aperture of an ion source
US8524584B2 (en) 2011-01-20 2013-09-03 Axcelis Technologies, Inc. Carbon implantation process and carbon ion precursor composition
JP5665679B2 (ja) * 2011-07-14 2015-02-04 住友重機械工業株式会社 不純物導入層形成装置及び静電チャック保護方法
US8937003B2 (en) 2011-09-16 2015-01-20 Varian Semiconductor Equipment Associates, Inc. Technique for ion implanting a target
US9196452B2 (en) * 2013-03-08 2015-11-24 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus for carbon ion source head
US9524849B2 (en) 2013-07-18 2016-12-20 Varian Semiconductor Equipment Associates, Inc. Method of improving ion beam quality in an implant system
US9677171B2 (en) * 2014-06-06 2017-06-13 Varian Semiconductor Equipment Associates, Inc. Method of improving ion beam quality in a non-mass-analyzed ion implantation system
CN113936984A (zh) * 2021-09-14 2022-01-14 长江存储科技有限责任公司 碳离子产生方法、组件及离子注入设备

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4264642A (en) * 1978-12-11 1981-04-28 Lord Corporation Deposition of thin film organic coatings by ion implantation
US4283249A (en) * 1979-05-02 1981-08-11 International Business Machines Corporation Reactive ion etching
US4474827A (en) * 1982-07-08 1984-10-02 Ferralli Michael W Ion induced thin surface coating
US6183843B1 (en) * 1991-12-06 2001-02-06 Raytheon Company Method for producing low reflectance diamond and products therefor
US5346600A (en) * 1992-08-14 1994-09-13 Hughes Aircraft Company Plasma-enhanced magnetron-sputtered deposition of materials
US5558718A (en) * 1994-04-08 1996-09-24 The Regents, University Of California Pulsed source ion implantation apparatus and method
JP3342201B2 (ja) * 1994-11-14 2002-11-05 独立行政法人産業技術総合研究所 光触媒用酸化チタン含有膜被覆基体及びその製造方法
US5693376A (en) * 1995-06-23 1997-12-02 Wisconsin Alumni Research Foundation Method for plasma source ion implantation and deposition for cylindrical surfaces
US6090456A (en) * 1997-05-03 2000-07-18 The United States Of America As Represented By The Secretary Of The Air Force Process for large area deposition of diamond-like carbon films
US6048411A (en) * 1997-05-12 2000-04-11 Silicon Genesis Corporation Silicon-on-silicon hybrid wafer assembly
US7154153B1 (en) * 1997-07-29 2006-12-26 Micron Technology, Inc. Memory device
JP2000064025A (ja) * 1998-06-11 2000-02-29 Mitsubishi Heavy Ind Ltd 炭窒化ホウ素膜の製造方法
JP2000204181A (ja) * 1999-01-11 2000-07-25 Sony Corp 樹脂の表面硬化方法及び表面硬化樹脂、並びにその製造装置
JP2000103884A (ja) * 1998-09-30 2000-04-11 Sony Corp プラスチックスの表面改質方法およびこの表面改質方法を用いて改質されたプラスチックス
US6399489B1 (en) * 1999-11-01 2002-06-04 Applied Materials, Inc. Barrier layer deposition using HDP-CVD
JP4416259B2 (ja) * 2000-03-24 2010-02-17 キヤノンアネルバ株式会社 質量分析装置
JP3865570B2 (ja) * 2000-06-16 2007-01-10 伊藤光学工業株式会社 プラズマ加工法
US7137354B2 (en) * 2000-08-11 2006-11-21 Applied Materials, Inc. Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage
JP4866534B2 (ja) * 2001-02-12 2012-02-01 エーエスエム アメリカ インコーポレイテッド 半導体膜の改良された堆積方法
WO2002082492A1 (en) * 2001-04-03 2002-10-17 Varian Semiconductor Equipment Associates, Inc. Helium ion generation method and apparatus
US6936505B2 (en) * 2003-05-20 2005-08-30 Intel Corporation Method of forming a shallow junction
JP4319556B2 (ja) * 2004-01-28 2009-08-26 浩史 滝川 プラズマ生成装置
US7015108B2 (en) * 2004-02-26 2006-03-21 Intel Corporation Implanting carbon to form P-type drain extensions
GB2412488B (en) * 2004-03-26 2007-03-28 Applied Materials Inc Ion sources
US20050274128A1 (en) * 2004-06-10 2005-12-15 Genesis Cryopump with enhanced hydrogen pumping
JP2006308728A (ja) * 2005-04-27 2006-11-09 Sony Corp 光学部品
JP4883601B2 (ja) * 2005-07-04 2012-02-22 国立大学法人豊橋技術科学大学 プラズマ処理装置
US7312148B2 (en) * 2005-08-08 2007-12-25 Applied Materials, Inc. Copper barrier reflow process employing high speed optical annealing
KR101297917B1 (ko) 2005-08-30 2013-08-27 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 대안적인 불화 붕소 전구체를 이용한 붕소 이온 주입 방법,및 주입을 위한 대형 수소화붕소의 형성 방법
KR101455404B1 (ko) * 2005-12-09 2014-10-27 세미이큅, 인코포레이티드 탄소 클러스터의 주입에 의한 반도체 디바이스의 제조를위한 시스템 및 방법
US20070178678A1 (en) 2006-01-28 2007-08-02 Varian Semiconductor Equipment Associates, Inc. Methods of implanting ions and ion sources used for same

Also Published As

Publication number Publication date
TWI443717B (zh) 2014-07-01
JP2011514668A (ja) 2011-05-06
KR101524858B1 (ko) 2015-06-01
CN101939823B (zh) 2012-07-18
TW200947532A (en) 2009-11-16
WO2009102754A3 (en) 2009-10-08
US20090200460A1 (en) 2009-08-13
WO2009102754A2 (en) 2009-08-20
KR20100135733A (ko) 2010-12-27
US8003957B2 (en) 2011-08-23
CN101939823A (zh) 2011-01-05

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