JP2011513954A - オプトエレクトロニクス素子およびオプトエレクトロニクス素子の製造方法 - Google Patents

オプトエレクトロニクス素子およびオプトエレクトロニクス素子の製造方法 Download PDF

Info

Publication number
JP2011513954A
JP2011513954A JP2010547942A JP2010547942A JP2011513954A JP 2011513954 A JP2011513954 A JP 2011513954A JP 2010547942 A JP2010547942 A JP 2010547942A JP 2010547942 A JP2010547942 A JP 2010547942A JP 2011513954 A JP2011513954 A JP 2011513954A
Authority
JP
Japan
Prior art keywords
layer
growth substrate
optoelectronic device
epitaxial layer
layer sequence
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010547942A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011513954A5 (https=
Inventor
シュテファン アヴラメスク アドリアン
アイヒラー クリストフ
シュトラウス ウーヴェ
ヘルレ フォルカー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of JP2011513954A publication Critical patent/JP2011513954A/ja
Publication of JP2011513954A5 publication Critical patent/JP2011513954A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0217—Removal of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H01S5/0424—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer lateral current injection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2908—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2010547942A 2008-02-29 2009-01-28 オプトエレクトロニクス素子およびオプトエレクトロニクス素子の製造方法 Pending JP2011513954A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008011864 2008-02-29
DE102008019268A DE102008019268A1 (de) 2008-02-29 2008-04-17 Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
PCT/DE2009/000116 WO2009106028A1 (de) 2008-02-29 2009-01-28 Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements

Publications (2)

Publication Number Publication Date
JP2011513954A true JP2011513954A (ja) 2011-04-28
JP2011513954A5 JP2011513954A5 (https=) 2012-03-01

Family

ID=40911434

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010547942A Pending JP2011513954A (ja) 2008-02-29 2009-01-28 オプトエレクトロニクス素子およびオプトエレクトロニクス素子の製造方法

Country Status (6)

Country Link
US (1) US8711893B2 (https=)
EP (1) EP2248235B1 (https=)
JP (1) JP2011513954A (https=)
DE (1) DE102008019268A1 (https=)
TW (1) TWI426674B (https=)
WO (1) WO2009106028A1 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017084847A (ja) * 2015-10-22 2017-05-18 スタンレー電気株式会社 垂直共振器型発光素子及びその製造方法
JP2017195364A (ja) * 2016-04-19 2017-10-26 株式会社東芝 光デバイスおよびその製作のための方法
JP2018014444A (ja) * 2016-07-22 2018-01-25 学校法人 名城大学 半導体多層膜反射鏡及び垂直共振器型発光素子の製造方法
KR20240104285A (ko) * 2022-12-27 2024-07-04 (재)한국나노기술원 박막형 InGaAs 레이저 셀 제조 방법 및 박막형 InGaAs 레이저 셀

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110018104A1 (en) * 2008-01-16 2011-01-27 Toru Nagashima METHOD FOR PRODUCING A LAMINATED BODY HAVING Al-BASED GROUP-III NITRIDE SINGLE CRYSTAL LAYER, LAMINATED BODY PRODUCED BY THE METHOD, METHOD FOR PRODUCING Al-BASED GROUP-III NITRIDE SINGLE CRYSTAL SUBSTRATE EMPLOYING THE LAMINATED BODY, AND ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE
FR2953328B1 (fr) * 2009-12-01 2012-03-30 S O I Tec Silicon On Insulator Tech Heterostructure pour composants electroniques de puissance, composants optoelectroniques ou photovoltaiques
DE102010046793B4 (de) * 2010-09-28 2024-05-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Kantenemittierende Halbleiterlaserdiode und Verfahren zu dessen Herstellung
DE102011113775B9 (de) 2011-09-19 2021-10-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Bauelements
TWI495163B (zh) * 2011-12-09 2015-08-01 中華電信股份有限公司 A method for manufacturing a resonant cavity light emitting diode
EP2618385A1 (de) * 2012-01-20 2013-07-24 AZUR SPACE Solar Power GmbH Halbzeug einer Mehrfachsolarzelle und Verfahren zur Herstellung einer Mehrfachsolarzelle
CN103400912B (zh) * 2013-08-22 2015-10-14 南京大学 日盲紫外dbr及其制备方法
US11200997B2 (en) * 2014-02-17 2021-12-14 City Labs, Inc. Semiconductor device with epitaxial liftoff layers for directly converting radioisotope emissions into electrical power
DE102016110790B4 (de) * 2016-06-13 2022-01-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaserdiode
DE102018002426A1 (de) 2018-03-26 2019-09-26 Azur Space Solar Power Gmbh Stapelförmiges III-V-Halbleiterzeug und Herstellungsverfahren
DE102019106521A1 (de) * 2019-03-14 2020-09-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Aufwachsstruktur für ein Strahlung emittierendes Halbleiterbauelement und Strahlung emittierendes Halbleiterbauelement
DE102021132164A1 (de) 2021-12-07 2023-06-07 Osram Opto Semiconductors Gmbh Laserdiodenbauelement und verfahren zur herstellung zumindest eines laserdiodenbauelements
DE102022133588A1 (de) * 2022-12-16 2024-06-27 Ams-Osram International Gmbh Laserbarrenchip und verfahren zum herstellen eines laserbarrenchips
TWI901400B (zh) * 2024-10-23 2025-10-11 國家原子能科技研究院 虛擬基板、其製造方法及利用其構成的光電裝置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003273399A (ja) * 2002-02-26 2003-09-26 Osram Opto Semiconductors Gmbh 垂直の発光方向を有する放射線を発する半導体デバイス及びその製造方法
JP2005101533A (ja) * 2003-08-20 2005-04-14 Sumitomo Electric Ind Ltd 発光素子およびその製造方法
JP2007080896A (ja) * 2005-09-12 2007-03-29 Sanyo Electric Co Ltd 半導体素子
JP2007521641A (ja) * 2003-12-09 2007-08-02 ザ・レジェンツ・オブ・ザ・ユニバーシティ・オブ・カリフォルニア 表面粗化による高効率の（Ｂ，Ａｌ，Ｇａ，Ｉｎ）Ｎベースの発光ダイオード

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4605942A (en) * 1984-10-09 1986-08-12 At&T Bell Laboratories Multiple wavelength light emitting devices
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
DE19640594B4 (de) 1996-10-01 2016-08-04 Osram Gmbh Bauelement
TW398084B (en) * 1998-06-05 2000-07-11 Hewlett Packard Co Multilayered indium-containing nitride buffer layer for nitride epitaxy
US6280523B1 (en) * 1999-02-05 2001-08-28 Lumileds Lighting, U.S., Llc Thickness tailoring of wafer bonded AlxGayInzN structures by laser melting
US6320206B1 (en) * 1999-02-05 2001-11-20 Lumileds Lighting, U.S., Llc Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks
US6133589A (en) * 1999-06-08 2000-10-17 Lumileds Lighting, U.S., Llc AlGaInN-based LED having thick epitaxial layer for improved light extraction
JP3866540B2 (ja) * 2001-07-06 2007-01-10 株式会社東芝 窒化物半導体素子およびその製造方法
US6835957B2 (en) 2002-07-30 2004-12-28 Lumileds Lighting U.S., Llc III-nitride light emitting device with p-type active layer
TWI240969B (en) * 2003-06-06 2005-10-01 Sanken Electric Co Ltd Nitride semiconductor device and method for manufacturing same
WO2005011007A1 (ja) 2003-07-28 2005-02-03 Toyoda Gosei Co., Ltd. 発光ダイオード及びその製造方法
WO2005055383A1 (ja) 2003-12-05 2005-06-16 Pioneer Corporation 半導体レーザ装置の製造方法
DE102004062290A1 (de) * 2004-12-23 2006-07-06 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterchips
DE102005035722B9 (de) * 2005-07-29 2021-11-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
DE102005052358A1 (de) * 2005-09-01 2007-03-15 Osram Opto Semiconductors Gmbh Verfahren zum lateralen Zertrennen eines Halbleiterwafers und optoelektronisches Bauelement
DE102006023685A1 (de) * 2005-09-29 2007-04-05 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
KR100756841B1 (ko) * 2006-03-13 2007-09-07 서울옵토디바이스주식회사 ＡｌｘＧａ１－ｘＮ 버퍼층을 갖는 발광 다이오드 및 이의제조 방법
DE102006061167A1 (de) * 2006-04-25 2007-12-20 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003273399A (ja) * 2002-02-26 2003-09-26 Osram Opto Semiconductors Gmbh 垂直の発光方向を有する放射線を発する半導体デバイス及びその製造方法
JP2005101533A (ja) * 2003-08-20 2005-04-14 Sumitomo Electric Ind Ltd 発光素子およびその製造方法
JP2007521641A (ja) * 2003-12-09 2007-08-02 ザ・レジェンツ・オブ・ザ・ユニバーシティ・オブ・カリフォルニア 表面粗化による高効率の（Ｂ，Ａｌ，Ｇａ，Ｉｎ）Ｎベースの発光ダイオード
JP2007080896A (ja) * 2005-09-12 2007-03-29 Sanyo Electric Co Ltd 半導体素子

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017084847A (ja) * 2015-10-22 2017-05-18 スタンレー電気株式会社 垂直共振器型発光素子及びその製造方法
JP2017195364A (ja) * 2016-04-19 2017-10-26 株式会社東芝 光デバイスおよびその製作のための方法
JP2018014444A (ja) * 2016-07-22 2018-01-25 学校法人 名城大学 半導体多層膜反射鏡及び垂直共振器型発光素子の製造方法
KR20240104285A (ko) * 2022-12-27 2024-07-04 (재)한국나노기술원 박막형 InGaAs 레이저 셀 제조 방법 및 박막형 InGaAs 레이저 셀
KR102868728B1 (ko) * 2022-12-27 2025-10-17 (재)한국나노기술원 박막형 InGaAs 레이저 셀 제조 방법 및 박막형 InGaAs 레이저 셀

Also Published As

Publication number Publication date
US20110051771A1 (en) 2011-03-03
TW200947816A (en) 2009-11-16
WO2009106028A1 (de) 2009-09-03
EP2248235A1 (de) 2010-11-10
EP2248235B1 (de) 2017-12-20
US8711893B2 (en) 2014-04-29
DE102008019268A1 (de) 2009-09-03
TWI426674B (zh) 2014-02-11

Similar Documents

Publication Publication Date Title
JP2011513954A (ja) オプトエレクトロニクス素子およびオプトエレクトロニクス素子の製造方法
US7974322B2 (en) Nitride semiconductor laser diode
JP4975204B2 (ja) ＡｌｘＧａｙＩｎｚＮ構造の組立方法
US8750343B2 (en) Nitride-based semiconductor light-emitting device, nitride-based semiconductor laser device, nitride-based semiconductor light-emitting diode, method of manufacturing the same, and method of forming nitride-based semiconductor layer
TWI420687B (zh) 偏光反向之三族氮化物發光裝置
CN1267109A (zh) 晶片键合的铝镓铟氮结构
JP5731084B2 (ja) 半導体光素子、半導体レーザ素子、及びその製造方法、並びに半導体レーザモジュール及び半導体素子の製造方法
JP2013544436A (ja) Ｉｉｉ族窒化物発光デバイス
JP2009094360A (ja) 半導体レーザダイオード
JP3843245B2 (ja) 半導体発光素子および半導体発光装置
EP2675024A2 (en) Electron beam pumped vertical cavity surface emitting laser
JPH10321910A (ja) 半導体発光素子
JP2009129941A (ja) 発光デバイス
TWI586060B (zh) 光電半導體本體及光電元件
JP5277066B2 (ja) 半導体発光素子およびその製造方法
JP2022138095A (ja) 窒化物半導体レーザダイオード及び窒化物半導体レーザダイオードの製造方法
JP4960777B2 (ja) 端面発光型半導体レーザチップ
JP2007324582A (ja) 集積型半導体発光装置およびその製造方法
JP4493041B2 (ja) 窒化物半導体発光素子
KR20050042715A (ko) 전극 구조체, 이를 구비하는 반도체 발광 소자 및 그제조방법
JP2006012899A (ja) 半導体レーザ素子および半導体レーザ素子の製造方法
JP4799582B2 (ja) 半導体装置の製造方法
JP2007235181A (ja) 半導体発光素子の製造方法および半導体発光装置の製造方法
JP2007324578A (ja) 集積型半導体発光装置およびその製造方法
JP7833570B2 (ja) 面発光レーザ、面発光レーザの製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120112

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120112

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130322

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130327

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130621

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20130819