JP2011511465A5 - - Google Patents

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Publication number
JP2011511465A5
JP2011511465A5 JP2010545359A JP2010545359A JP2011511465A5 JP 2011511465 A5 JP2011511465 A5 JP 2011511465A5 JP 2010545359 A JP2010545359 A JP 2010545359A JP 2010545359 A JP2010545359 A JP 2010545359A JP 2011511465 A5 JP2011511465 A5 JP 2011511465A5
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JP
Japan
Prior art keywords
electron beam
substrate
energy
pattern
patterns
Prior art date
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Pending
Application number
JP2010545359A
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English (en)
Japanese (ja)
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JP2011511465A (ja
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Priority claimed from PCT/DK2009/050036 external-priority patent/WO2009097859A1/en
Publication of JP2011511465A publication Critical patent/JP2011511465A/ja
Publication of JP2011511465A5 publication Critical patent/JP2011511465A5/ja
Pending legal-status Critical Current

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JP2010545359A 2008-02-05 2009-02-05 電子ビームリソグラフィを行うための方法 Pending JP2011511465A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DKPA200800161 2008-02-05
PCT/DK2009/050036 WO2009097859A1 (en) 2008-02-05 2009-02-05 A method for performing electron beam lithography

Publications (2)

Publication Number Publication Date
JP2011511465A JP2011511465A (ja) 2011-04-07
JP2011511465A5 true JP2011511465A5 (enExample) 2013-04-04

Family

ID=39800641

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010545359A Pending JP2011511465A (ja) 2008-02-05 2009-02-05 電子ビームリソグラフィを行うための方法

Country Status (6)

Country Link
US (1) US8361699B2 (enExample)
EP (1) EP2245646A1 (enExample)
JP (1) JP2011511465A (enExample)
KR (1) KR20100138907A (enExample)
CN (1) CN101933116A (enExample)
WO (1) WO2009097859A1 (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011199279A (ja) * 2010-03-18 2011-10-06 Ims Nanofabrication Ag ターゲット上へのマルチビーム露光のための方法
CN102798615A (zh) * 2011-05-23 2012-11-28 中国科学院微电子研究所 一种基于周期性纳米结构的生物传感器及其制备方法
CN102954950A (zh) * 2011-08-31 2013-03-06 中国科学院微电子研究所 一种基于周期性纳米介质颗粒的生物传感器及其制备方法
CN103018167A (zh) * 2011-09-23 2013-04-03 中国科学院微电子研究所 表面等离子体共振样品台及其制备方法
KR101993255B1 (ko) 2013-01-07 2019-06-26 삼성전자주식회사 콘택 홀 형성 방법
EP2757571B1 (en) 2013-01-17 2017-09-20 IMS Nanofabrication AG High-voltage insulation device for charged-particle optical apparatus
JP6195349B2 (ja) * 2013-04-26 2017-09-13 キヤノン株式会社 描画装置、描画方法、および物品の製造方法
JP2015023286A (ja) 2013-07-17 2015-02-02 アイエムエス ナノファブリケーション アーゲー 複数のブランキングアレイを有するパターン画定装置
EP2830083B1 (en) 2013-07-25 2016-05-04 IMS Nanofabrication AG Method for charged-particle multi-beam exposure
EP2913838B1 (en) 2014-02-28 2018-09-19 IMS Nanofabrication GmbH Compensation of defective beamlets in a charged-particle multi-beam exposure tool
EP2937889B1 (en) 2014-04-25 2017-02-15 IMS Nanofabrication AG Multi-beam tool for cutting patterns
EP3358599B1 (en) 2014-05-30 2021-01-27 IMS Nanofabrication GmbH Compensation of dose inhomogeneity using row calibration
JP6890373B2 (ja) 2014-07-10 2021-06-18 アイエムエス ナノファブリケーション ゲーエムベーハー 畳み込みカーネルを使用する粒子ビーム描画機における結像偏向の補償
US9568907B2 (en) 2014-09-05 2017-02-14 Ims Nanofabrication Ag Correction of short-range dislocations in a multi-beam writer
CN107533285B (zh) * 2014-12-22 2021-02-05 尤利塔股份公司 打印彩色图像的方法
US9653263B2 (en) 2015-03-17 2017-05-16 Ims Nanofabrication Ag Multi-beam writing of pattern areas of relaxed critical dimension
EP3096342B1 (en) 2015-03-18 2017-09-20 IMS Nanofabrication AG Bi-directional double-pass multi-beam writing
EP3093869B1 (en) * 2015-05-12 2018-10-03 IMS Nanofabrication GmbH Multi-beam writing using inclined exposure stripes
US10410831B2 (en) 2015-05-12 2019-09-10 Ims Nanofabrication Gmbh Multi-beam writing using inclined exposure stripes
WO2017086907A1 (en) * 2015-11-16 2017-05-26 Intel Corporation Structures and methods for improved lithographic processing
US10056265B2 (en) 2016-03-18 2018-08-21 Taiwan Semiconductor Manufacturing Co., Ltd. Directed self-assembly process with size-restricted guiding patterns
US10325756B2 (en) 2016-06-13 2019-06-18 Ims Nanofabrication Gmbh Method for compensating pattern placement errors caused by variation of pattern exposure density in a multi-beam writer
US10325757B2 (en) 2017-01-27 2019-06-18 Ims Nanofabrication Gmbh Advanced dose-level quantization of multibeam-writers
US10522329B2 (en) 2017-08-25 2019-12-31 Ims Nanofabrication Gmbh Dose-related feature reshaping in an exposure pattern to be exposed in a multi beam writing apparatus
US11569064B2 (en) 2017-09-18 2023-01-31 Ims Nanofabrication Gmbh Method for irradiating a target using restricted placement grids
US10651010B2 (en) 2018-01-09 2020-05-12 Ims Nanofabrication Gmbh Non-linear dose- and blur-dependent edge placement correction
US10840054B2 (en) 2018-01-30 2020-11-17 Ims Nanofabrication Gmbh Charged-particle source and method for cleaning a charged-particle source using back-sputtering
US11099482B2 (en) 2019-05-03 2021-08-24 Ims Nanofabrication Gmbh Adapting the duration of exposure slots in multi-beam writers
KR20210099516A (ko) 2020-02-03 2021-08-12 아이엠에스 나노패브릭케이션 게엠베하 멀티―빔 라이터의 블러 변화 보정
KR20210132599A (ko) 2020-04-24 2021-11-04 아이엠에스 나노패브릭케이션 게엠베하 대전 입자 소스
EP4095882A1 (en) 2021-05-25 2022-11-30 IMS Nanofabrication GmbH Pattern data processing for programmable direct-write apparatus
US12154756B2 (en) 2021-08-12 2024-11-26 Ims Nanofabrication Gmbh Beam pattern device having beam absorber structure

Family Cites Families (7)

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Publication number Priority date Publication date Assignee Title
JP3128267B2 (ja) * 1991-06-27 2001-01-29 株式会社東芝 半導体集積回路装置の製造方法
US5369282A (en) * 1992-08-03 1994-11-29 Fujitsu Limited Electron beam exposure method and system for exposing a pattern on a substrate with an improved accuracy and throughput
US5759744A (en) * 1995-02-24 1998-06-02 University Of New Mexico Methods and apparatus for lithography of sparse arrays of sub-micrometer features
EP0964305A1 (en) 1998-06-08 1999-12-15 Corning Incorporated Method of making a photonic crystal
US6238850B1 (en) * 1999-08-23 2001-05-29 International Business Machines Corp. Method of forming sharp corners in a photoresist layer
NL1015155C2 (nl) * 2000-05-11 2001-11-13 Tno Elektronenstraallithografie.
EP1842103A2 (en) 2005-01-14 2007-10-10 Arradiance, Inc. Synchronous raster scanning lithographic system

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