JP2011511465A - 電子ビームリソグラフィを行うための方法 - Google Patents
電子ビームリソグラフィを行うための方法 Download PDFInfo
- Publication number
- JP2011511465A JP2011511465A JP2010545359A JP2010545359A JP2011511465A JP 2011511465 A JP2011511465 A JP 2011511465A JP 2010545359 A JP2010545359 A JP 2010545359A JP 2010545359 A JP2010545359 A JP 2010545359A JP 2011511465 A JP2011511465 A JP 2011511465A
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- substrate
- energy
- pattern
- patterns
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 44
- 238000000609 electron-beam lithography Methods 0.000 title claims abstract description 40
- 238000010894 electron beam technology Methods 0.000 claims abstract description 75
- 239000000758 substrate Substances 0.000 claims abstract description 71
- 238000004590 computer program Methods 0.000 claims description 6
- 238000001459 lithography Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000013500 data storage Methods 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000001878 scanning electron micrograph Methods 0.000 description 11
- 230000003287 optical effect Effects 0.000 description 10
- 238000003491 array Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 230000001788 irregular Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 239000002070 nanowire Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000004793 Polystyrene Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000004416 surface enhanced Raman spectroscopy Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 101100460147 Sarcophaga bullata NEMS gene Proteins 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 208000007150 epidermolysis bullosa simplex Diseases 0.000 description 1
- 239000002061 nanopillar Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
- G03F7/203—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0275—Photolithographic processes using lasers
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Analytical Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DKPA200800161 | 2008-02-05 | ||
| PCT/DK2009/050036 WO2009097859A1 (en) | 2008-02-05 | 2009-02-05 | A method for performing electron beam lithography |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011511465A true JP2011511465A (ja) | 2011-04-07 |
| JP2011511465A5 JP2011511465A5 (enExample) | 2013-04-04 |
Family
ID=39800641
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010545359A Pending JP2011511465A (ja) | 2008-02-05 | 2009-02-05 | 電子ビームリソグラフィを行うための方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8361699B2 (enExample) |
| EP (1) | EP2245646A1 (enExample) |
| JP (1) | JP2011511465A (enExample) |
| KR (1) | KR20100138907A (enExample) |
| CN (1) | CN101933116A (enExample) |
| WO (1) | WO2009097859A1 (enExample) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011199279A (ja) * | 2010-03-18 | 2011-10-06 | Ims Nanofabrication Ag | ターゲット上へのマルチビーム露光のための方法 |
| CN102798615A (zh) * | 2011-05-23 | 2012-11-28 | 中国科学院微电子研究所 | 一种基于周期性纳米结构的生物传感器及其制备方法 |
| CN102954950A (zh) * | 2011-08-31 | 2013-03-06 | 中国科学院微电子研究所 | 一种基于周期性纳米介质颗粒的生物传感器及其制备方法 |
| CN103018167A (zh) * | 2011-09-23 | 2013-04-03 | 中国科学院微电子研究所 | 表面等离子体共振样品台及其制备方法 |
| KR101993255B1 (ko) | 2013-01-07 | 2019-06-26 | 삼성전자주식회사 | 콘택 홀 형성 방법 |
| EP2757571B1 (en) | 2013-01-17 | 2017-09-20 | IMS Nanofabrication AG | High-voltage insulation device for charged-particle optical apparatus |
| JP6195349B2 (ja) * | 2013-04-26 | 2017-09-13 | キヤノン株式会社 | 描画装置、描画方法、および物品の製造方法 |
| JP2015023286A (ja) | 2013-07-17 | 2015-02-02 | アイエムエス ナノファブリケーション アーゲー | 複数のブランキングアレイを有するパターン画定装置 |
| EP2830083B1 (en) | 2013-07-25 | 2016-05-04 | IMS Nanofabrication AG | Method for charged-particle multi-beam exposure |
| EP2913838B1 (en) | 2014-02-28 | 2018-09-19 | IMS Nanofabrication GmbH | Compensation of defective beamlets in a charged-particle multi-beam exposure tool |
| EP2937889B1 (en) | 2014-04-25 | 2017-02-15 | IMS Nanofabrication AG | Multi-beam tool for cutting patterns |
| EP3358599B1 (en) | 2014-05-30 | 2021-01-27 | IMS Nanofabrication GmbH | Compensation of dose inhomogeneity using row calibration |
| JP6890373B2 (ja) | 2014-07-10 | 2021-06-18 | アイエムエス ナノファブリケーション ゲーエムベーハー | 畳み込みカーネルを使用する粒子ビーム描画機における結像偏向の補償 |
| US9568907B2 (en) | 2014-09-05 | 2017-02-14 | Ims Nanofabrication Ag | Correction of short-range dislocations in a multi-beam writer |
| CN107533285B (zh) * | 2014-12-22 | 2021-02-05 | 尤利塔股份公司 | 打印彩色图像的方法 |
| US9653263B2 (en) | 2015-03-17 | 2017-05-16 | Ims Nanofabrication Ag | Multi-beam writing of pattern areas of relaxed critical dimension |
| EP3096342B1 (en) | 2015-03-18 | 2017-09-20 | IMS Nanofabrication AG | Bi-directional double-pass multi-beam writing |
| EP3093869B1 (en) * | 2015-05-12 | 2018-10-03 | IMS Nanofabrication GmbH | Multi-beam writing using inclined exposure stripes |
| US10410831B2 (en) | 2015-05-12 | 2019-09-10 | Ims Nanofabrication Gmbh | Multi-beam writing using inclined exposure stripes |
| WO2017086907A1 (en) * | 2015-11-16 | 2017-05-26 | Intel Corporation | Structures and methods for improved lithographic processing |
| US10056265B2 (en) | 2016-03-18 | 2018-08-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Directed self-assembly process with size-restricted guiding patterns |
| US10325756B2 (en) | 2016-06-13 | 2019-06-18 | Ims Nanofabrication Gmbh | Method for compensating pattern placement errors caused by variation of pattern exposure density in a multi-beam writer |
| US10325757B2 (en) | 2017-01-27 | 2019-06-18 | Ims Nanofabrication Gmbh | Advanced dose-level quantization of multibeam-writers |
| US10522329B2 (en) | 2017-08-25 | 2019-12-31 | Ims Nanofabrication Gmbh | Dose-related feature reshaping in an exposure pattern to be exposed in a multi beam writing apparatus |
| US11569064B2 (en) | 2017-09-18 | 2023-01-31 | Ims Nanofabrication Gmbh | Method for irradiating a target using restricted placement grids |
| US10651010B2 (en) | 2018-01-09 | 2020-05-12 | Ims Nanofabrication Gmbh | Non-linear dose- and blur-dependent edge placement correction |
| US10840054B2 (en) | 2018-01-30 | 2020-11-17 | Ims Nanofabrication Gmbh | Charged-particle source and method for cleaning a charged-particle source using back-sputtering |
| US11099482B2 (en) | 2019-05-03 | 2021-08-24 | Ims Nanofabrication Gmbh | Adapting the duration of exposure slots in multi-beam writers |
| KR20210099516A (ko) | 2020-02-03 | 2021-08-12 | 아이엠에스 나노패브릭케이션 게엠베하 | 멀티―빔 라이터의 블러 변화 보정 |
| KR20210132599A (ko) | 2020-04-24 | 2021-11-04 | 아이엠에스 나노패브릭케이션 게엠베하 | 대전 입자 소스 |
| EP4095882A1 (en) | 2021-05-25 | 2022-11-30 | IMS Nanofabrication GmbH | Pattern data processing for programmable direct-write apparatus |
| US12154756B2 (en) | 2021-08-12 | 2024-11-26 | Ims Nanofabrication Gmbh | Beam pattern device having beam absorber structure |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3128267B2 (ja) * | 1991-06-27 | 2001-01-29 | 株式会社東芝 | 半導体集積回路装置の製造方法 |
| US5369282A (en) * | 1992-08-03 | 1994-11-29 | Fujitsu Limited | Electron beam exposure method and system for exposing a pattern on a substrate with an improved accuracy and throughput |
| US5759744A (en) * | 1995-02-24 | 1998-06-02 | University Of New Mexico | Methods and apparatus for lithography of sparse arrays of sub-micrometer features |
| EP0964305A1 (en) | 1998-06-08 | 1999-12-15 | Corning Incorporated | Method of making a photonic crystal |
| US6238850B1 (en) * | 1999-08-23 | 2001-05-29 | International Business Machines Corp. | Method of forming sharp corners in a photoresist layer |
| NL1015155C2 (nl) * | 2000-05-11 | 2001-11-13 | Tno | Elektronenstraallithografie. |
| EP1842103A2 (en) | 2005-01-14 | 2007-10-10 | Arradiance, Inc. | Synchronous raster scanning lithographic system |
-
2009
- 2009-02-05 JP JP2010545359A patent/JP2011511465A/ja active Pending
- 2009-02-05 WO PCT/DK2009/050036 patent/WO2009097859A1/en not_active Ceased
- 2009-02-05 KR KR1020107019879A patent/KR20100138907A/ko not_active Withdrawn
- 2009-02-05 EP EP09708412A patent/EP2245646A1/en not_active Withdrawn
- 2009-02-05 US US12/866,070 patent/US8361699B2/en active Active
- 2009-02-05 CN CN2009801040179A patent/CN101933116A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR20100138907A (ko) | 2010-12-31 |
| EP2245646A1 (en) | 2010-11-03 |
| US8361699B2 (en) | 2013-01-29 |
| WO2009097859A1 (en) | 2009-08-13 |
| US20110053087A1 (en) | 2011-03-03 |
| CN101933116A (zh) | 2010-12-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120130 |
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| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120130 |
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| A072 | Dismissal of procedure [no reply to invitation to correct request for examination] |
Free format text: JAPANESE INTERMEDIATE CODE: A073 Effective date: 20130611 |