KR20100138907A - 전자빔 리소그래피를 수행하는 방법 - Google Patents

전자빔 리소그래피를 수행하는 방법 Download PDF

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Publication number
KR20100138907A
KR20100138907A KR1020107019879A KR20107019879A KR20100138907A KR 20100138907 A KR20100138907 A KR 20100138907A KR 1020107019879 A KR1020107019879 A KR 1020107019879A KR 20107019879 A KR20107019879 A KR 20107019879A KR 20100138907 A KR20100138907 A KR 20100138907A
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KR
South Korea
Prior art keywords
pattern
electron beam
substrate
energy
lithography
Prior art date
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KR1020107019879A
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English (en)
Korean (ko)
Inventor
테오도르 캠프 닐슨
브라이언 빌렌베르그
페익시옹 쉬
Original Assignee
닐 테크놀로지 에이피에스
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Application filed by 닐 테크놀로지 에이피에스 filed Critical 닐 테크놀로지 에이피에스
Publication of KR20100138907A publication Critical patent/KR20100138907A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/203—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020107019879A 2008-02-05 2009-02-05 전자빔 리소그래피를 수행하는 방법 Withdrawn KR20100138907A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DKPA200800161 2008-02-05
DKPA200800161 2008-02-05

Publications (1)

Publication Number Publication Date
KR20100138907A true KR20100138907A (ko) 2010-12-31

Family

ID=39800641

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107019879A Withdrawn KR20100138907A (ko) 2008-02-05 2009-02-05 전자빔 리소그래피를 수행하는 방법

Country Status (6)

Country Link
US (1) US8361699B2 (enExample)
EP (1) EP2245646A1 (enExample)
JP (1) JP2011511465A (enExample)
KR (1) KR20100138907A (enExample)
CN (1) CN101933116A (enExample)
WO (1) WO2009097859A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016213472A (ja) * 2015-05-12 2016-12-15 アイエムエス ナノファブリケーション アーゲー 斜めに配された露光ストライプを用いるマルチビーム描画
WO2017086907A1 (en) * 2015-11-16 2017-05-26 Intel Corporation Structures and methods for improved lithographic processing

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JP2011199279A (ja) * 2010-03-18 2011-10-06 Ims Nanofabrication Ag ターゲット上へのマルチビーム露光のための方法
CN102798615A (zh) * 2011-05-23 2012-11-28 中国科学院微电子研究所 一种基于周期性纳米结构的生物传感器及其制备方法
CN102954950A (zh) * 2011-08-31 2013-03-06 中国科学院微电子研究所 一种基于周期性纳米介质颗粒的生物传感器及其制备方法
CN103018167A (zh) * 2011-09-23 2013-04-03 中国科学院微电子研究所 表面等离子体共振样品台及其制备方法
KR101993255B1 (ko) 2013-01-07 2019-06-26 삼성전자주식회사 콘택 홀 형성 방법
EP2757571B1 (en) 2013-01-17 2017-09-20 IMS Nanofabrication AG High-voltage insulation device for charged-particle optical apparatus
JP6195349B2 (ja) * 2013-04-26 2017-09-13 キヤノン株式会社 描画装置、描画方法、および物品の製造方法
JP2015023286A (ja) 2013-07-17 2015-02-02 アイエムエス ナノファブリケーション アーゲー 複数のブランキングアレイを有するパターン画定装置
EP2830083B1 (en) 2013-07-25 2016-05-04 IMS Nanofabrication AG Method for charged-particle multi-beam exposure
EP2913838B1 (en) 2014-02-28 2018-09-19 IMS Nanofabrication GmbH Compensation of defective beamlets in a charged-particle multi-beam exposure tool
EP2937889B1 (en) 2014-04-25 2017-02-15 IMS Nanofabrication AG Multi-beam tool for cutting patterns
EP3358599B1 (en) 2014-05-30 2021-01-27 IMS Nanofabrication GmbH Compensation of dose inhomogeneity using row calibration
JP6890373B2 (ja) 2014-07-10 2021-06-18 アイエムエス ナノファブリケーション ゲーエムベーハー 畳み込みカーネルを使用する粒子ビーム描画機における結像偏向の補償
US9568907B2 (en) 2014-09-05 2017-02-14 Ims Nanofabrication Ag Correction of short-range dislocations in a multi-beam writer
CN107533285B (zh) * 2014-12-22 2021-02-05 尤利塔股份公司 打印彩色图像的方法
US9653263B2 (en) 2015-03-17 2017-05-16 Ims Nanofabrication Ag Multi-beam writing of pattern areas of relaxed critical dimension
EP3096342B1 (en) 2015-03-18 2017-09-20 IMS Nanofabrication AG Bi-directional double-pass multi-beam writing
US10410831B2 (en) 2015-05-12 2019-09-10 Ims Nanofabrication Gmbh Multi-beam writing using inclined exposure stripes
US10056265B2 (en) 2016-03-18 2018-08-21 Taiwan Semiconductor Manufacturing Co., Ltd. Directed self-assembly process with size-restricted guiding patterns
US10325756B2 (en) 2016-06-13 2019-06-18 Ims Nanofabrication Gmbh Method for compensating pattern placement errors caused by variation of pattern exposure density in a multi-beam writer
US10325757B2 (en) 2017-01-27 2019-06-18 Ims Nanofabrication Gmbh Advanced dose-level quantization of multibeam-writers
US10522329B2 (en) 2017-08-25 2019-12-31 Ims Nanofabrication Gmbh Dose-related feature reshaping in an exposure pattern to be exposed in a multi beam writing apparatus
US11569064B2 (en) 2017-09-18 2023-01-31 Ims Nanofabrication Gmbh Method for irradiating a target using restricted placement grids
US10651010B2 (en) 2018-01-09 2020-05-12 Ims Nanofabrication Gmbh Non-linear dose- and blur-dependent edge placement correction
US10840054B2 (en) 2018-01-30 2020-11-17 Ims Nanofabrication Gmbh Charged-particle source and method for cleaning a charged-particle source using back-sputtering
US11099482B2 (en) 2019-05-03 2021-08-24 Ims Nanofabrication Gmbh Adapting the duration of exposure slots in multi-beam writers
KR20210099516A (ko) 2020-02-03 2021-08-12 아이엠에스 나노패브릭케이션 게엠베하 멀티―빔 라이터의 블러 변화 보정
KR20210132599A (ko) 2020-04-24 2021-11-04 아이엠에스 나노패브릭케이션 게엠베하 대전 입자 소스
EP4095882A1 (en) 2021-05-25 2022-11-30 IMS Nanofabrication GmbH Pattern data processing for programmable direct-write apparatus
US12154756B2 (en) 2021-08-12 2024-11-26 Ims Nanofabrication Gmbh Beam pattern device having beam absorber structure

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JP3128267B2 (ja) * 1991-06-27 2001-01-29 株式会社東芝 半導体集積回路装置の製造方法
US5369282A (en) * 1992-08-03 1994-11-29 Fujitsu Limited Electron beam exposure method and system for exposing a pattern on a substrate with an improved accuracy and throughput
US5759744A (en) * 1995-02-24 1998-06-02 University Of New Mexico Methods and apparatus for lithography of sparse arrays of sub-micrometer features
EP0964305A1 (en) 1998-06-08 1999-12-15 Corning Incorporated Method of making a photonic crystal
US6238850B1 (en) * 1999-08-23 2001-05-29 International Business Machines Corp. Method of forming sharp corners in a photoresist layer
NL1015155C2 (nl) * 2000-05-11 2001-11-13 Tno Elektronenstraallithografie.
EP1842103A2 (en) 2005-01-14 2007-10-10 Arradiance, Inc. Synchronous raster scanning lithographic system

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016213472A (ja) * 2015-05-12 2016-12-15 アイエムエス ナノファブリケーション アーゲー 斜めに配された露光ストライプを用いるマルチビーム描画
WO2017086907A1 (en) * 2015-11-16 2017-05-26 Intel Corporation Structures and methods for improved lithographic processing
US10490416B2 (en) 2015-11-16 2019-11-26 Intel Corporation Structures and methods for improved lithographic processing

Also Published As

Publication number Publication date
EP2245646A1 (en) 2010-11-03
US8361699B2 (en) 2013-01-29
WO2009097859A1 (en) 2009-08-13
JP2011511465A (ja) 2011-04-07
US20110053087A1 (en) 2011-03-03
CN101933116A (zh) 2010-12-29

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Date Code Title Description
PA0105 International application

Patent event date: 20100906

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid