JP2011507284A - ウェハ積層体、一体化された光学装置およびこれを作製するための方法 - Google Patents
ウェハ積層体、一体化された光学装置およびこれを作製するための方法 Download PDFInfo
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- JP2011507284A JP2011507284A JP2010538308A JP2010538308A JP2011507284A JP 2011507284 A JP2011507284 A JP 2011507284A JP 2010538308 A JP2010538308 A JP 2010538308A JP 2010538308 A JP2010538308 A JP 2010538308A JP 2011507284 A JP2011507284 A JP 2011507284A
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- wafer
- awning plate
- optical device
- functional elements
- integrated optical
- Prior art date
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- 230000003287 optical effect Effects 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims description 23
- 235000012431 wafers Nutrition 0.000 claims abstract description 91
- 238000004519 manufacturing process Methods 0.000 claims abstract description 16
- 238000010030 laminating Methods 0.000 claims abstract description 8
- 239000012780 transparent material Substances 0.000 claims description 3
- 230000000475 sunscreen effect Effects 0.000 claims 1
- 239000000516 sunscreening agent Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 9
- 239000010408 film Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 125000006850 spacer group Chemical group 0.000 description 6
- 238000004049 embossing Methods 0.000 description 5
- 230000010076 replication Effects 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 230000003362 replicative effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8053—Colour filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
- H10F77/334—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers or cold shields for infrared detectors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49826—Assembling or joining
Landscapes
- Studio Devices (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Lens Barrels (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US1480807P | 2007-12-19 | 2007-12-19 | |
| PCT/CH2008/000532 WO2009076788A1 (en) | 2007-12-19 | 2008-12-16 | Wafer stack, integrated optical device and method for fabricating the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011507284A true JP2011507284A (ja) | 2011-03-03 |
| JP2011507284A5 JP2011507284A5 (enExample) | 2012-02-02 |
Family
ID=40430188
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010538308A Pending JP2011507284A (ja) | 2007-12-19 | 2008-12-16 | ウェハ積層体、一体化された光学装置およびこれを作製するための方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8289635B2 (enExample) |
| EP (1) | EP2223338A1 (enExample) |
| JP (1) | JP2011507284A (enExample) |
| KR (1) | KR20100106480A (enExample) |
| CN (1) | CN101971341B (enExample) |
| TW (1) | TW200937642A (enExample) |
| WO (1) | WO2009076788A1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013531812A (ja) * | 2010-06-14 | 2013-08-08 | ヘプタゴン・オサケ・ユキチュア | 複数の光学装置の製造方法 |
| KR20140070532A (ko) * | 2011-07-19 | 2014-06-10 | 헵타곤 마이크로 옵틱스 피티이. 리미티드 | 광전 모듈들 및 그 제조 방법들 |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101872033B (zh) * | 2009-04-24 | 2014-04-30 | 鸿富锦精密工业(深圳)有限公司 | 遮光片阵列、遮光片阵列制造方法及镜头模组阵列 |
| CN102045494A (zh) * | 2009-10-22 | 2011-05-04 | 国碁电子(中山)有限公司 | 相机模组及其制作方法 |
| WO2011156928A2 (en) | 2010-06-14 | 2011-12-22 | Heptagon Oy | Camera, and method of manufacturing a plurality of cameras |
| CN103620468A (zh) * | 2011-06-17 | 2014-03-05 | 柯尼卡美能达株式会社 | 晶片透镜的制造方法及晶片透镜、透镜单元的制造方法及透镜单元 |
| WO2013049947A1 (en) * | 2011-10-05 | 2013-04-11 | Hartmut Rudmann | Micro-optical system and method of manufacture thereof |
| TWI567953B (zh) | 2011-12-20 | 2017-01-21 | 新加坡恒立私人有限公司 | 光電模組及包含該模組之裝置 |
| SG11201403240UA (en) | 2011-12-22 | 2014-07-30 | Heptagon Micro Optics Pte Ltd | Opto-electronic modules, in particular flash modules, and method for manufacturing the same |
| SG10201701879RA (en) * | 2012-05-17 | 2017-04-27 | Heptagon Micro Optics Pte Ltd | Assembly of wafer stacks |
| WO2014007758A1 (en) * | 2012-07-03 | 2014-01-09 | Heptagon Micro Optics Pte. Ltd. | Use of vacuum chucks to hold a wafer or wafer sub-stack |
| US8606057B1 (en) | 2012-11-02 | 2013-12-10 | Heptagon Micro Optics Pte. Ltd. | Opto-electronic modules including electrically conductive connections for integration with an electronic device |
| KR102135492B1 (ko) * | 2012-12-27 | 2020-07-20 | 헵타곤 마이크로 옵틱스 피티이. 리미티드 | 광학 소자의 제조 및 이를 통합한 모듈 |
| WO2014109711A1 (en) * | 2013-01-10 | 2014-07-17 | Heptagon Micro Optics Pte. Ltd. | Opto-electronic modules including features to help reduce stray light and/or optical cross-talk |
| JP2014186006A (ja) * | 2013-03-25 | 2014-10-02 | Toshiba Corp | 赤外線撮像装置および赤外線撮像モジュール |
| US9923008B2 (en) * | 2013-04-12 | 2018-03-20 | Omnivision Technologies, Inc. | Wafer-level array cameras and methods for fabricating the same |
| US9543354B2 (en) * | 2013-07-30 | 2017-01-10 | Heptagon Micro Optics Pte. Ltd. | Optoelectronic modules that have shielding to reduce light leakage or stray light, and fabrication methods for such modules |
| US9746349B2 (en) * | 2013-09-02 | 2017-08-29 | Heptagon Micro Optics Pte. Ltd. | Opto-electronic module including a non-transparent separation member between a light emitting element and a light detecting element |
| SG11201601050PA (en) * | 2013-09-10 | 2016-03-30 | Heptagon Micro Optics Pte Ltd | Compact opto-electronic modules and fabrication methods for such modules |
| US9880391B2 (en) * | 2013-10-01 | 2018-01-30 | Heptagon Micro Optics Pte. Ltd. | Lens array modules and wafer-level techniques for fabricating the same |
| SG10201804924SA (en) * | 2013-12-09 | 2018-07-30 | Heptagon Micro Optics Pte Ltd | Modules having multiple optical channels including optical elements at different heights above the optoelectronic devices |
| US9121994B2 (en) * | 2013-12-17 | 2015-09-01 | Anteryon Wafer Optics B.V. | Method of fabricating a wafer level optical lens assembly |
| US9176261B2 (en) * | 2014-02-17 | 2015-11-03 | Genius Electronic Optical Co., Ltd. | Optical lens assembly, array type lens module and method of making the array type lens module |
| US9711552B2 (en) | 2014-08-19 | 2017-07-18 | Heptagon Micro Optics Pte. Ltd. | Optoelectronic modules having a silicon substrate, and fabrication methods for such modules |
| EP3024029B1 (en) | 2014-11-19 | 2020-04-22 | ams AG | Method of producing a semiconductor device comprising an aperture array |
| US10437025B2 (en) * | 2015-01-26 | 2019-10-08 | Omnivision Technologies, Inc. | Wafer-level lens packaging methods, and associated lens assemblies and camera modules |
| US10455131B2 (en) | 2015-01-26 | 2019-10-22 | Omnivision Technologies, Inc. | Wafer-level methods for packing camera modules, and associated camera modules |
| TWI677991B (zh) * | 2015-11-04 | 2019-11-21 | 美商豪威科技股份有限公司 | 用於封裝相機模組的晶圓級方法及相關的相機模組 |
| CN109155258B (zh) * | 2016-04-08 | 2022-04-26 | 赫普塔冈微光有限公司 | 具有孔径的薄光电模块及其制造 |
| JP2018109716A (ja) * | 2017-01-05 | 2018-07-12 | ソニーセミコンダクタソリューションズ株式会社 | レンズモジュールおよびレンズモジュールの製造方法、撮像装置、並びに電子機器 |
| US10734184B1 (en) | 2019-06-21 | 2020-08-04 | Elbit Systems Of America, Llc | Wafer scale image intensifier |
Citations (9)
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|---|---|---|---|---|
| JPH1065132A (ja) * | 1996-08-14 | 1998-03-06 | Sony Corp | 半導体撮像装置 |
| JP2002368235A (ja) * | 2001-03-21 | 2002-12-20 | Canon Inc | 半導体装置及びその製造方法 |
| JP2003289459A (ja) * | 2002-03-28 | 2003-10-10 | Citizen Electronics Co Ltd | 小型撮像モジュール |
| JP2004200965A (ja) * | 2002-12-18 | 2004-07-15 | Sanyo Electric Co Ltd | カメラモジュール及びその製造方法 |
| JP2005020687A (ja) * | 2003-05-30 | 2005-01-20 | Matsushita Electric Ind Co Ltd | 撮像装置およびその製造方法 |
| JP2005227500A (ja) * | 2004-02-12 | 2005-08-25 | Fujinon Corp | 撮像装置 |
| JP2007510291A (ja) * | 2003-10-27 | 2007-04-19 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | カメラモジュール及びこのようなカメラモジュールの製造方法 |
| JP2007129164A (ja) * | 2005-11-07 | 2007-05-24 | Sharp Corp | 光学装置用モジュール、光学装置用モジュールの製造方法、及び、構造体 |
| JP2007520166A (ja) * | 2004-01-26 | 2007-07-19 | ディジタル・オプティックス・コーポレイション | サブピクセル解像度を有する薄型カメラ |
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| JPS58141562A (ja) * | 1982-02-17 | 1983-08-22 | Fujitsu Ltd | 冷却型光電変換装置の製造方法 |
| US6324010B1 (en) * | 1999-07-19 | 2001-11-27 | Eastman Kodak Company | Optical assembly and a method for manufacturing lens systems |
| DE20100418U1 (de) * | 2000-01-15 | 2001-04-26 | Agilent Technologies, Inc., Palo Alto, Calif. | Photodetektor |
| JP3887162B2 (ja) * | 2000-10-19 | 2007-02-28 | 富士通株式会社 | 撮像用半導体装置 |
| US6635941B2 (en) | 2001-03-21 | 2003-10-21 | Canon Kabushiki Kaisha | Structure of semiconductor device with improved reliability |
| JP2004029554A (ja) * | 2002-06-27 | 2004-01-29 | Olympus Corp | 撮像レンズユニットおよび撮像装置 |
| JP4499385B2 (ja) * | 2003-07-29 | 2010-07-07 | 浜松ホトニクス株式会社 | 裏面入射型光検出素子及び裏面入射型光検出素子の製造方法 |
| JP5292291B2 (ja) | 2006-07-17 | 2013-09-18 | デジタルオプティクス・コーポレイション・イースト | カメラシステムの作製方法 |
| JP2011180293A (ja) * | 2010-02-26 | 2011-09-15 | Fujifilm Corp | レンズアレイ |
-
2008
- 2008-12-15 TW TW097148778A patent/TW200937642A/zh unknown
- 2008-12-16 JP JP2010538308A patent/JP2011507284A/ja active Pending
- 2008-12-16 EP EP08863376A patent/EP2223338A1/en not_active Withdrawn
- 2008-12-16 WO PCT/CH2008/000532 patent/WO2009076788A1/en not_active Ceased
- 2008-12-16 KR KR1020107015605A patent/KR20100106480A/ko not_active Ceased
- 2008-12-16 US US12/809,362 patent/US8289635B2/en active Active
- 2008-12-16 CN CN2008801270814A patent/CN101971341B/zh active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1065132A (ja) * | 1996-08-14 | 1998-03-06 | Sony Corp | 半導体撮像装置 |
| JP2002368235A (ja) * | 2001-03-21 | 2002-12-20 | Canon Inc | 半導体装置及びその製造方法 |
| JP2003289459A (ja) * | 2002-03-28 | 2003-10-10 | Citizen Electronics Co Ltd | 小型撮像モジュール |
| JP2004200965A (ja) * | 2002-12-18 | 2004-07-15 | Sanyo Electric Co Ltd | カメラモジュール及びその製造方法 |
| JP2005020687A (ja) * | 2003-05-30 | 2005-01-20 | Matsushita Electric Ind Co Ltd | 撮像装置およびその製造方法 |
| JP2007510291A (ja) * | 2003-10-27 | 2007-04-19 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | カメラモジュール及びこのようなカメラモジュールの製造方法 |
| JP2007520166A (ja) * | 2004-01-26 | 2007-07-19 | ディジタル・オプティックス・コーポレイション | サブピクセル解像度を有する薄型カメラ |
| JP2005227500A (ja) * | 2004-02-12 | 2005-08-25 | Fujinon Corp | 撮像装置 |
| JP2007129164A (ja) * | 2005-11-07 | 2007-05-24 | Sharp Corp | 光学装置用モジュール、光学装置用モジュールの製造方法、及び、構造体 |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013531812A (ja) * | 2010-06-14 | 2013-08-08 | ヘプタゴン・オサケ・ユキチュア | 複数の光学装置の製造方法 |
| KR20140070532A (ko) * | 2011-07-19 | 2014-06-10 | 헵타곤 마이크로 옵틱스 피티이. 리미티드 | 광전 모듈들 및 그 제조 방법들 |
| JP2014521226A (ja) * | 2011-07-19 | 2014-08-25 | ヘプタゴン・マイクロ・オプティクス・プライベート・リミテッド | 光電子モジュール、光電子モジュールの製造方法、ならびに光電子モジュールを備える機器およびデバイス |
| US9966493B2 (en) | 2011-07-19 | 2018-05-08 | Heptagon Micro Optics Pte. Ltd. | Opto-electronic modules and methods of manufacturing the same and appliances and devices comprising the same |
| KR102123128B1 (ko) * | 2011-07-19 | 2020-06-16 | 헵타곤 마이크로 옵틱스 피티이. 리미티드 | 광전 모듈들 및 그 제조 방법들 |
| US11005001B2 (en) | 2011-07-19 | 2021-05-11 | Ams Sensors Singapore Pte. Ltd. | Opto-electronic modules and methods of manufacturing the same and appliances and devices comprising the same |
Also Published As
| Publication number | Publication date |
|---|---|
| US8289635B2 (en) | 2012-10-16 |
| EP2223338A1 (en) | 2010-09-01 |
| WO2009076788A1 (en) | 2009-06-25 |
| CN101971341B (zh) | 2012-10-03 |
| US20110013292A1 (en) | 2011-01-20 |
| CN101971341A (zh) | 2011-02-09 |
| KR20100106480A (ko) | 2010-10-01 |
| TW200937642A (en) | 2009-09-01 |
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