KR20100106480A - 웨이퍼 스택, 집적 광학 장치 및 이를 제조하기 위한 방법 - Google Patents

웨이퍼 스택, 집적 광학 장치 및 이를 제조하기 위한 방법 Download PDF

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Publication number
KR20100106480A
KR20100106480A KR1020107015605A KR20107015605A KR20100106480A KR 20100106480 A KR20100106480 A KR 20100106480A KR 1020107015605 A KR1020107015605 A KR 1020107015605A KR 20107015605 A KR20107015605 A KR 20107015605A KR 20100106480 A KR20100106480 A KR 20100106480A
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KR
South Korea
Prior art keywords
wafer
integrated optical
optical device
wafer stack
stack
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Ceased
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KR1020107015605A
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English (en)
Korean (ko)
Inventor
마르쿠스 로씨
하르트무트 루트만
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헵타곤 오와이
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Application filed by 헵타곤 오와이 filed Critical 헵타곤 오와이
Publication of KR20100106480A publication Critical patent/KR20100106480A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H10F77/334—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers or cold shields for infrared detectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49826—Assembling or joining

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  • Studio Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Lens Barrels (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020107015605A 2007-12-19 2008-12-16 웨이퍼 스택, 집적 광학 장치 및 이를 제조하기 위한 방법 Ceased KR20100106480A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1480807P 2007-12-19 2007-12-19
US61/014,808 2007-12-19

Publications (1)

Publication Number Publication Date
KR20100106480A true KR20100106480A (ko) 2010-10-01

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ID=40430188

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KR1020107015605A Ceased KR20100106480A (ko) 2007-12-19 2008-12-16 웨이퍼 스택, 집적 광학 장치 및 이를 제조하기 위한 방법

Country Status (7)

Country Link
US (1) US8289635B2 (enExample)
EP (1) EP2223338A1 (enExample)
JP (1) JP2011507284A (enExample)
KR (1) KR20100106480A (enExample)
CN (1) CN101971341B (enExample)
TW (1) TW200937642A (enExample)
WO (1) WO2009076788A1 (enExample)

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* Cited by examiner, † Cited by third party
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KR20140121398A (ko) * 2011-12-22 2014-10-15 헵타곤 마이크로 옵틱스 피티이. 리미티드 광전자 모듈, 특히 플래시 모듈, 및 그것을 제조하기 위한 방법
KR20160039645A (ko) * 2013-07-30 2016-04-11 헵타곤 마이크로 옵틱스 피티이. 리미티드 광 누설 또는 미광을 감소시키는 차폐를 갖는 광전자 모듈들, 및 이러한 모듈들의 제조 방법들

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CN101872033B (zh) * 2009-04-24 2014-04-30 鸿富锦精密工业（深圳）有限公司 遮光片阵列、遮光片阵列制造方法及镜头模组阵列
CN102045494A (zh) * 2009-10-22 2011-05-04 国碁电子(中山)有限公司 相机模组及其制作方法
JP2013531812A (ja) * 2010-06-14 2013-08-08 ヘプタゴン・オサケ・ユキチュア 複数の光学装置の製造方法
WO2011156928A2 (en) 2010-06-14 2011-12-22 Heptagon Oy Camera, and method of manufacturing a plurality of cameras
CN103620468A (zh) * 2011-06-17 2014-03-05 柯尼卡美能达株式会社 晶片透镜的制造方法及晶片透镜、透镜单元的制造方法及透镜单元
KR102123128B1 (ko) * 2011-07-19 2020-06-16 헵타곤 마이크로 옵틱스 피티이. 리미티드 광전 모듈들 및 그 제조 방법들
WO2013049947A1 (en) * 2011-10-05 2013-04-11 Hartmut Rudmann Micro-optical system and method of manufacture thereof
TWI567953B (zh) 2011-12-20 2017-01-21 新加坡恒立私人有限公司 光電模組及包含該模組之裝置
SG10201701879RA (en) * 2012-05-17 2017-04-27 Heptagon Micro Optics Pte Ltd Assembly of wafer stacks
WO2014007758A1 (en) * 2012-07-03 2014-01-09 Heptagon Micro Optics Pte. Ltd. Use of vacuum chucks to hold a wafer or wafer sub-stack
US8606057B1 (en) 2012-11-02 2013-12-10 Heptagon Micro Optics Pte. Ltd. Opto-electronic modules including electrically conductive connections for integration with an electronic device
KR102135492B1 (ko) * 2012-12-27 2020-07-20 헵타곤 마이크로 옵틱스 피티이. 리미티드 광학 소자의 제조 및 이를 통합한 모듈
WO2014109711A1 (en) * 2013-01-10 2014-07-17 Heptagon Micro Optics Pte. Ltd. Opto-electronic modules including features to help reduce stray light and/or optical cross-talk
JP2014186006A (ja) * 2013-03-25 2014-10-02 Toshiba Corp 赤外線撮像装置および赤外線撮像モジュール
US9923008B2 (en) * 2013-04-12 2018-03-20 Omnivision Technologies, Inc. Wafer-level array cameras and methods for fabricating the same
US9746349B2 (en) * 2013-09-02 2017-08-29 Heptagon Micro Optics Pte. Ltd. Opto-electronic module including a non-transparent separation member between a light emitting element and a light detecting element
SG11201601050PA (en) * 2013-09-10 2016-03-30 Heptagon Micro Optics Pte Ltd Compact opto-electronic modules and fabrication methods for such modules
US9880391B2 (en) * 2013-10-01 2018-01-30 Heptagon Micro Optics Pte. Ltd. Lens array modules and wafer-level techniques for fabricating the same
SG10201804924SA (en) * 2013-12-09 2018-07-30 Heptagon Micro Optics Pte Ltd Modules having multiple optical channels including optical elements at different heights above the optoelectronic devices
US9121994B2 (en) * 2013-12-17 2015-09-01 Anteryon Wafer Optics B.V. Method of fabricating a wafer level optical lens assembly
US9176261B2 (en) * 2014-02-17 2015-11-03 Genius Electronic Optical Co., Ltd. Optical lens assembly, array type lens module and method of making the array type lens module
US9711552B2 (en) 2014-08-19 2017-07-18 Heptagon Micro Optics Pte. Ltd. Optoelectronic modules having a silicon substrate, and fabrication methods for such modules
EP3024029B1 (en) 2014-11-19 2020-04-22 ams AG Method of producing a semiconductor device comprising an aperture array
US10437025B2 (en) * 2015-01-26 2019-10-08 Omnivision Technologies, Inc. Wafer-level lens packaging methods, and associated lens assemblies and camera modules
US10455131B2 (en) 2015-01-26 2019-10-22 Omnivision Technologies, Inc. Wafer-level methods for packing camera modules, and associated camera modules
TWI677991B (zh) * 2015-11-04 2019-11-21 美商豪威科技股份有限公司 用於封裝相機模組的晶圓級方法及相關的相機模組
CN109155258B (zh) * 2016-04-08 2022-04-26 赫普塔冈微光有限公司 具有孔径的薄光电模块及其制造
JP2018109716A (ja) * 2017-01-05 2018-07-12 ソニーセミコンダクタソリューションズ株式会社 レンズモジュールおよびレンズモジュールの製造方法、撮像装置、並びに電子機器
US10734184B1 (en) 2019-06-21 2020-08-04 Elbit Systems Of America, Llc Wafer scale image intensifier

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JPS58141562A (ja) * 1982-02-17 1983-08-22 Fujitsu Ltd 冷却型光電変換装置の製造方法
JPH1065132A (ja) * 1996-08-14 1998-03-06 Sony Corp 半導体撮像装置
US6324010B1 (en) * 1999-07-19 2001-11-27 Eastman Kodak Company Optical assembly and a method for manufacturing lens systems
DE20100418U1 (de) * 2000-01-15 2001-04-26 Agilent Technologies, Inc., Palo Alto, Calif. Photodetektor
JP3887162B2 (ja) * 2000-10-19 2007-02-28 富士通株式会社 撮像用半導体装置
US6635941B2 (en) 2001-03-21 2003-10-21 Canon Kabushiki Kaisha Structure of semiconductor device with improved reliability
JP2002368235A (ja) * 2001-03-21 2002-12-20 Canon Inc 半導体装置及びその製造方法
JP4030047B2 (ja) * 2002-03-28 2008-01-09 シチズン電子株式会社 小型撮像モジュール
JP2004029554A (ja) * 2002-06-27 2004-01-29 Olympus Corp 撮像レンズユニットおよび撮像装置
JP2004200965A (ja) * 2002-12-18 2004-07-15 Sanyo Electric Co Ltd カメラモジュール及びその製造方法
JP3981348B2 (ja) * 2003-05-30 2007-09-26 松下電器産業株式会社 撮像装置およびその製造方法
JP4499385B2 (ja) * 2003-07-29 2010-07-07 浜松ホトニクス株式会社 裏面入射型光検出素子及び裏面入射型光検出素子の製造方法
KR20060113902A (ko) * 2003-10-27 2006-11-03 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 카메라 모듈 및 그 제조 방법과, 이동 전화기 또는 ｐｄａ
CN1934872B (zh) * 2004-01-26 2016-08-03 数字光学公司 具有子像素分辨率的薄式照相机
JP2005227500A (ja) * 2004-02-12 2005-08-25 Fujinon Corp 撮像装置
JP2007129164A (ja) * 2005-11-07 2007-05-24 Sharp Corp 光学装置用モジュール、光学装置用モジュールの製造方法、及び、構造体
JP5292291B2 (ja) 2006-07-17 2013-09-18 デジタルオプティクス・コーポレイション・イースト カメラシステムの作製方法
JP2011180293A (ja) * 2010-02-26 2011-09-15 Fujifilm Corp レンズアレイ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140121398A (ko) * 2011-12-22 2014-10-15 헵타곤 마이크로 옵틱스 피티이. 리미티드 광전자 모듈, 특히 플래시 모듈, 및 그것을 제조하기 위한 방법
KR20160039645A (ko) * 2013-07-30 2016-04-11 헵타곤 마이크로 옵틱스 피티이. 리미티드 광 누설 또는 미광을 감소시키는 차폐를 갖는 광전자 모듈들, 및 이러한 모듈들의 제조 방법들

Also Published As

Publication number Publication date
US8289635B2 (en) 2012-10-16
EP2223338A1 (en) 2010-09-01
WO2009076788A1 (en) 2009-06-25
CN101971341B (zh) 2012-10-03
US20110013292A1 (en) 2011-01-20
CN101971341A (zh) 2011-02-09
TW200937642A (en) 2009-09-01
JP2011507284A (ja) 2011-03-03

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