WO2009076788A1 - Wafer stack, integrated optical device and method for fabricating the same - Google Patents
Wafer stack, integrated optical device and method for fabricating the same Download PDFInfo
- Publication number
- WO2009076788A1 WO2009076788A1 PCT/CH2008/000532 CH2008000532W WO2009076788A1 WO 2009076788 A1 WO2009076788 A1 WO 2009076788A1 CH 2008000532 W CH2008000532 W CH 2008000532W WO 2009076788 A1 WO2009076788 A1 WO 2009076788A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- wafer
- sunshade plate
- integrated optical
- wafer stack
- functional elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8053—Colour filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
- H10F77/334—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers or cold shields for infrared detectors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49826—Assembling or joining
Definitions
- the invention relates to an optical device for a camera module comprising a baffle that defines a predetermined field of view (FOV) of the image capturing device, while suppressing beam paths coming from points outside this FOV.
- the invention further relates to a wafer scale package representing a plurality of such optical devices, to a baffle array with a plurality of baffles and to methods for manufacturing a plurality of camera modules and for manufacturing a baffle substrate.
- the camera modules are integrated optical devices, which include functional elements such as the image capturing device and the at least one lens stacked together along the general direction of light propagation. These elements are arranged in a predetermined spatial relationship with respect to one another (integrated device) such that further alignment with each other is not needed, leaving only the integrated device as such to be aligned with other systems.
- Wafer-scale replication of lens elements allows the fabrication of several hundreds of generally identical devices with a single step, e.g. a single or double-sided UV- embossing process.
- Replication techniques include injection molding, roller hot embossing, flat-bed hot embossing, UV embossing.
- the surface topology of a master structure is replicated into a thin film of a UV-curable replication material such as an UV curable epoxy resin on top of a substrate.
- the replicated surface topology can be a refractive or a diffractive optically effective structure, or a combination of both.
- a replication tool bearing a plurality of replication sections that are a negative copy of the optical structures to be manufactured is prepared, e.g. from a master.
- the tool is then used to UV-emboss the epoxy resin.
- the master can be a lithographically fabricated structure in fused silica or silicon, a laser or e-beam written structure, a diamond turned structure or any other type of structure.
- the master may also be a submaster produced in a multi stage generation process by replication from a (super) master.
- a substrate or wafer in the meaning used in this text is a disc or a rectangular plate or a plate of any other shape of any dimensionally stable, often transparent material.
- the diameter of a wafer disk is typically between 5 cm and 40 cm, for example between 10 cm and 31 cm. Often it is cylindrical with a diameter of either 2, 4, 6, 8 or 12 inches, one inch being about 2.54 cm.
- the wafer thickness is for example between 0.2 mm and 10 mm, typically between 0.4 mm and 6 mm.
- the substrate is at least partially transparent. Otherwise, the substrate can be nontransparent as well.
- at least one substrate bears electro-optical components, like the image capturing device, and may thus be a silicon or GaAs or other semiconductor based wafer; it may also be a CMOS wafer or a wafer carrying CCD arrays or an array of Position Sensitive Detectors.
- Such integrated optical devices can be manufactured by stacking wafers along the axis corresponding to the direction of the smallest wafer dimension (axial direction).
- the wafers comprise functional elements, like lens elements or image capturing elements, in a well defined spatial arrangement on the wafer.
- a wafer stack comprising a plurality of generally identical integrated optical devices can be formed, wherein the elements of the optical device have a well defined spatial relationship with respect to one another and define a main optical axis of the device.
- spacer means, e.g. a plurality of separated spacers or an interconnected spacer matrix as disclosed in US 2003/0010431 or WO 2004/027880, the wafers can be spaced from one another, and lens elements can also be arranged between the wafers on a wafer surface facing another wafer.
- a sunshade or baffle is an element that defines a field of view (FOV) of the image capturing element by suppressing beam paths coming from points outside this FOV.
- Known baffles consist of a layer of non-transparent material having a given thickness in axial direction and a through-hole for light transmission.
- the through- hole generally defines a cone with a given extent in axial direction through which light can pass.
- the thickness as well as the shape of the side walls of the through hole determines the FOV and the maximum angle (collection angle) under which incident light can pass the baffle and enter the camera module. It is often desired that the collection angle does not exceed a predetermined value.
- baffles have thus a thickness of several 100 ⁇ m (e.g. 100-300 ⁇ m) and side walls of the through hole which are tapered with an angle of 25-35° with respect to the normal direction of the front wall such that an opening with a varying cross section having a diameter in the range of 1-3 mm is formed. This restricts the full angle of the field of view to about 50 to 70°. ⁇
- baffles are normally made as separate parts. They are attached to the integrated camera module only after its complete manufacture, i.e. after the dicing step if a wafer scale manufacturing process is employed. The additional steps of attaching each individual baffle to each individual camera module associated therewith is time-consuming and complicated and thus another disadvantage of known modules and manufacturing processes.
- a further disadvantage is that the optical system, or at least the top lens element or the iris layer, is fully accessible via the through hole. This may lead to damage and contamination.
- the method for providing a sunshade plate is part of a method for fabricating an integrated optical device by creating a wafer stack by stacking at least a top wafer carrying as functional elements a plurality of lenses on at least one further wafer comprising further functional elements, and separating (dicing) the wafer stack into a plurality of integrated optical devices, wherein corresponding functional elements of the top and further wafer are aligned with each other and define a plurality of main optical axes.
- the method for providing a sunshade plate method for providing a sunshade plate as part of an integrated optical device comprises the steps of
- a sunshade plate comprising a plurality of through holes, the through holes being arranged to correspond to the arrangement of the functional elements on the top wafer; • stacking the sunshade plate on the top wafer, with the through holes being aligned with said main optical axes.
- the optical device may comprise an imaging chip, making it an integrated camera module.
- the method comprises the further step of stacking a transparent cover plate on the sunshade plate prior to cutting the wafer stack into individual optical devices.
- the integrated camera module also comprises a protective cover, and the camera module may be installed in a consumer product such as a mobile phone without the need for a protective plate being mounted on the camera or being provided as part of the housing of the consumer product.
- the step of stacking usually includes gluing or bonding the layers being stacked together, e.g. by means of an adhesive.
- the wafer stack constitutes a wafer scale package.
- a single integrated camera module is manufactured from a wafer stack or wafer package by separating (dicing or cutting) said wafer stack into a plurality of integrated camera modules.
- Figure 1 an elevated view of a sunshade plate
- FIGS. 4 and 5 lateral cut-away views of integrated camera modules.
- Figure 1 schematically shows an elevated view of a sunshade plate.
- the sunshade plate 1 is wafer-sized and comprises a plurality of through holes 6, typically arranged in a grid or array.
- the through holes 6 extend from a top surface 11 to a bottom surface 12 of the sunshade plate 1 and preferably are conical in shape.
- Figures 2 and 3 show lateral cut-away views of wafer stacks 8 with a sunshade plate 1.
- a wafer stack 8 comprises, from top to bottom, a sunshade plate 1 stacked on a top wafer 2 carrying functional elements, for example, a first lens 9a and second lens 9b.
- the top wafer 2 may carry only lenses on its top or only on its bottom surface.
- the lenses may be fabricated on the top wafer 2 by means of a replication process, or may be shaped into the top wafer 2 itself.
- the top wafer 2 is stacked on a further wafer 4 from which it may be separated by a spacer wafer 3.
- the further wafer 4 carries, as further functional elements, imaging or camera chips 9c.
- Each camera chip 9c is aligned with a corresponding lens or set of lenses 9a, 9b, thus forming, together with the surrounding structural elements 2, 3, 4 an integrated camera.
- Each such integrated camera or integrated optical device defines a main optical axis 14.
- Figure 3 shows a different embodiment from that of Figure 2, in that it additionally comprises a transparent cover plate 5 stacked on the sunshade plate 1.
- Further embodiments may comprise further layers of e.g. lenses arranged between the top wafer 2 and the further wafer 4.
- the through holes 6 in the sunshade plate 1 comprise side walls 7, typically conical shaped, which are tapered with an angle of 20-40°, preferably 25-35° with respect to the normal direction of the sunshade plate 1 or its top surface 1 1.
- the exact angle is determined according to camera specifications and usually is about 2° more than the camera's field of view.
- the side walls may be vertical or may be tapered in the other direction, i.e. opening up towards the bottom.
- the side walls are not straight, but rounded or chamfered.
- the thickness of the sunshade plate 1 is in the range of 0.1 to 0.5 or 1 millimeters, the width of the top opening of the through hole 6 being ca. 1 to 3 or 5 millimeters, and the width of the bottom opening being e.g. around 0.3 millimeters.
- the sunshade plate 1 is preferably made of an optically intransparent material.
- the manufacturing process for the sunshade plate 1 itself may be molding, stamping, or another replication process.
- material preferably a plastic material such as a thermoplast or an epoxy, with or without filler material, is used.
Landscapes
- Studio Devices (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Lens Barrels (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008801270814A CN101971341B (zh) | 2007-12-19 | 2008-12-16 | 晶片堆叠、集成电路器件及其制造方法 |
| US12/809,362 US8289635B2 (en) | 2007-12-19 | 2008-12-16 | Wafer stack, integrated optical device and method for fabricating the same |
| JP2010538308A JP2011507284A (ja) | 2007-12-19 | 2008-12-16 | ウェハ積層体、一体化された光学装置およびこれを作製するための方法 |
| EP08863376A EP2223338A1 (en) | 2007-12-19 | 2008-12-16 | Wafer stack, integrated optical device and method for fabricating the same |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US1480807P | 2007-12-19 | 2007-12-19 | |
| US61/014,808 | 2007-12-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2009076788A1 true WO2009076788A1 (en) | 2009-06-25 |
Family
ID=40430188
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/CH2008/000532 Ceased WO2009076788A1 (en) | 2007-12-19 | 2008-12-16 | Wafer stack, integrated optical device and method for fabricating the same |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8289635B2 (enExample) |
| EP (1) | EP2223338A1 (enExample) |
| JP (1) | JP2011507284A (enExample) |
| KR (1) | KR20100106480A (enExample) |
| CN (1) | CN101971341B (enExample) |
| TW (1) | TW200937642A (enExample) |
| WO (1) | WO2009076788A1 (enExample) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011156928A2 (en) | 2010-06-14 | 2011-12-22 | Heptagon Oy | Camera, and method of manufacturing a plurality of cameras |
| US20130019461A1 (en) * | 2011-07-19 | 2013-01-24 | Heptagon Micro Optics Pte. Ltd. | Opto-electronic modules and methods of manufacturing the same and appliances and devices comprising the same |
| WO2013049947A1 (en) * | 2011-10-05 | 2013-04-11 | Hartmut Rudmann | Micro-optical system and method of manufacture thereof |
| JP2013531812A (ja) * | 2010-06-14 | 2013-08-08 | ヘプタゴン・オサケ・ユキチュア | 複数の光学装置の製造方法 |
| US8674305B2 (en) * | 2011-12-20 | 2014-03-18 | Heptagon Micro Optics Pte. Ltd. | Opto-electronic module and devices comprising the same |
| WO2014109711A1 (en) * | 2013-01-10 | 2014-07-17 | Heptagon Micro Optics Pte. Ltd. | Opto-electronic modules including features to help reduce stray light and/or optical cross-talk |
| EP2784819A3 (en) * | 2013-03-25 | 2014-10-29 | Kabushiki Kaisha Toshiba | Infrared imaging device and infrared imaging module |
| WO2015016775A1 (en) * | 2013-07-30 | 2015-02-05 | Heptagon Micro Optics Pte. Ltd. | Optoelectronic modules that have shielding to reduce light leakage or stray light, and fabrication methods for such modules |
| EP3024029A1 (en) | 2014-11-19 | 2016-05-25 | ams AG | Semiconductor device comprising an aperture array and method of producing such a semiconductor device |
| US10437025B2 (en) | 2015-01-26 | 2019-10-08 | Omnivision Technologies, Inc. | Wafer-level lens packaging methods, and associated lens assemblies and camera modules |
| US10455131B2 (en) | 2015-01-26 | 2019-10-22 | Omnivision Technologies, Inc. | Wafer-level methods for packing camera modules, and associated camera modules |
| US10886420B2 (en) * | 2016-04-08 | 2021-01-05 | Ams Sensors Singapore Pte. Ltd. | Thin optoelectronic modules with apertures and their manufacture |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101872033B (zh) * | 2009-04-24 | 2014-04-30 | 鸿富锦精密工业(深圳)有限公司 | 遮光片阵列、遮光片阵列制造方法及镜头模组阵列 |
| CN102045494A (zh) * | 2009-10-22 | 2011-05-04 | 国碁电子(中山)有限公司 | 相机模组及其制作方法 |
| JPWO2012173252A1 (ja) * | 2011-06-17 | 2015-02-23 | コニカミノルタ株式会社 | ウェハーレンズの製造方法及びウェハーレンズ、並びにレンズユニットの製造方法及びレンズユニット |
| KR102177372B1 (ko) * | 2011-12-22 | 2020-11-12 | 헵타곤 마이크로 옵틱스 피티이. 리미티드 | 광전자 모듈, 특히 플래시 모듈, 및 그것을 제조하기 위한 방법 |
| WO2013172786A1 (en) * | 2012-05-17 | 2013-11-21 | Heptagon Micro Optics Pte. Ltd. | Assembly of wafer stacks |
| CN104471695B (zh) * | 2012-07-03 | 2017-09-19 | 赫普塔冈微光有限公司 | 使用真空吸盘固持晶片或晶片子堆叠 |
| US8606057B1 (en) | 2012-11-02 | 2013-12-10 | Heptagon Micro Optics Pte. Ltd. | Opto-electronic modules including electrically conductive connections for integration with an electronic device |
| WO2014104972A1 (en) * | 2012-12-27 | 2014-07-03 | Heptagon Micro Optics Pte. Ltd. | Fabrication of optical elements and modules incorporating the same |
| US9923008B2 (en) * | 2013-04-12 | 2018-03-20 | Omnivision Technologies, Inc. | Wafer-level array cameras and methods for fabricating the same |
| US9746349B2 (en) * | 2013-09-02 | 2017-08-29 | Heptagon Micro Optics Pte. Ltd. | Opto-electronic module including a non-transparent separation member between a light emitting element and a light detecting element |
| CN105531829B (zh) * | 2013-09-10 | 2018-08-14 | 赫普塔冈微光有限公司 | 紧凑光电模块以及用于这样的模块的制造方法 |
| US9880391B2 (en) * | 2013-10-01 | 2018-01-30 | Heptagon Micro Optics Pte. Ltd. | Lens array modules and wafer-level techniques for fabricating the same |
| EP3080840B1 (en) * | 2013-12-09 | 2019-05-22 | Heptagon Micro Optics Pte. Ltd. | Modules having multiple optical channels including optical elements at different heights above the optoelectronic devices |
| US9121994B2 (en) * | 2013-12-17 | 2015-09-01 | Anteryon Wafer Optics B.V. | Method of fabricating a wafer level optical lens assembly |
| US9176261B2 (en) * | 2014-02-17 | 2015-11-03 | Genius Electronic Optical Co., Ltd. | Optical lens assembly, array type lens module and method of making the array type lens module |
| US9711552B2 (en) * | 2014-08-19 | 2017-07-18 | Heptagon Micro Optics Pte. Ltd. | Optoelectronic modules having a silicon substrate, and fabrication methods for such modules |
| TWI677991B (zh) * | 2015-11-04 | 2019-11-21 | 美商豪威科技股份有限公司 | 用於封裝相機模組的晶圓級方法及相關的相機模組 |
| JP2018109716A (ja) * | 2017-01-05 | 2018-07-12 | ソニーセミコンダクタソリューションズ株式会社 | レンズモジュールおよびレンズモジュールの製造方法、撮像装置、並びに電子機器 |
| US10734184B1 (en) | 2019-06-21 | 2020-08-04 | Elbit Systems Of America, Llc | Wafer scale image intensifier |
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- 2008-12-16 CN CN2008801270814A patent/CN101971341B/zh active Active
- 2008-12-16 EP EP08863376A patent/EP2223338A1/en not_active Withdrawn
- 2008-12-16 WO PCT/CH2008/000532 patent/WO2009076788A1/en not_active Ceased
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Cited By (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013531812A (ja) * | 2010-06-14 | 2013-08-08 | ヘプタゴン・オサケ・ユキチュア | 複数の光学装置の製造方法 |
| WO2011156928A2 (en) | 2010-06-14 | 2011-12-22 | Heptagon Oy | Camera, and method of manufacturing a plurality of cameras |
| CN103620779A (zh) * | 2011-07-19 | 2014-03-05 | 赫普塔冈微光有限公司 | 光电模块及其制造方法 |
| WO2013010284A3 (en) * | 2011-07-19 | 2013-07-18 | Heptagon Micro Optics Pte. Ltd. | Opto -electronic modules and methods of manufacturing the same |
| CN103512595A (zh) * | 2011-07-19 | 2014-01-15 | 赫普塔冈微光有限公司 | 光电模块及其制造方法与包含光电模块的电器及装置 |
| CN103512595B (zh) * | 2011-07-19 | 2016-08-10 | 赫普塔冈微光有限公司 | 光电模块及其制造方法与包含光电模块的电器及装置 |
| US20130019461A1 (en) * | 2011-07-19 | 2013-01-24 | Heptagon Micro Optics Pte. Ltd. | Opto-electronic modules and methods of manufacturing the same and appliances and devices comprising the same |
| US11005001B2 (en) | 2011-07-19 | 2021-05-11 | Ams Sensors Singapore Pte. Ltd. | Opto-electronic modules and methods of manufacturing the same and appliances and devices comprising the same |
| US9966493B2 (en) | 2011-07-19 | 2018-05-08 | Heptagon Micro Optics Pte. Ltd. | Opto-electronic modules and methods of manufacturing the same and appliances and devices comprising the same |
| CN103620779B (zh) * | 2011-07-19 | 2016-12-28 | 赫普塔冈微光有限公司 | 光电模块及其制造方法 |
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| WO2013049947A1 (en) * | 2011-10-05 | 2013-04-11 | Hartmut Rudmann | Micro-optical system and method of manufacture thereof |
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Also Published As
| Publication number | Publication date |
|---|---|
| EP2223338A1 (en) | 2010-09-01 |
| CN101971341B (zh) | 2012-10-03 |
| TW200937642A (en) | 2009-09-01 |
| CN101971341A (zh) | 2011-02-09 |
| US8289635B2 (en) | 2012-10-16 |
| KR20100106480A (ko) | 2010-10-01 |
| JP2011507284A (ja) | 2011-03-03 |
| US20110013292A1 (en) | 2011-01-20 |
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