JP2011507272A5 - - Google Patents

Download PDF

Info

Publication number
JP2011507272A5
JP2011507272A5 JP2010538013A JP2010538013A JP2011507272A5 JP 2011507272 A5 JP2011507272 A5 JP 2011507272A5 JP 2010538013 A JP2010538013 A JP 2010538013A JP 2010538013 A JP2010538013 A JP 2010538013A JP 2011507272 A5 JP2011507272 A5 JP 2011507272A5
Authority
JP
Japan
Prior art keywords
led
converter
wafer
wavelength
emitting diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010538013A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011507272A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2008/082766 external-priority patent/WO2009075972A2/en
Publication of JP2011507272A publication Critical patent/JP2011507272A/ja
Publication of JP2011507272A5 publication Critical patent/JP2011507272A5/ja
Pending legal-status Critical Current

Links

JP2010538013A 2007-12-10 2008-11-07 簡易な光抽出方式の下方変換発光ダイオード Pending JP2011507272A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1260407P 2007-12-10 2007-12-10
PCT/US2008/082766 WO2009075972A2 (en) 2007-12-10 2008-11-07 Down-converted light emitting diode with simplified light extraction

Publications (2)

Publication Number Publication Date
JP2011507272A JP2011507272A (ja) 2011-03-03
JP2011507272A5 true JP2011507272A5 (OSRAM) 2011-12-22

Family

ID=40756057

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010538013A Pending JP2011507272A (ja) 2007-12-10 2008-11-07 簡易な光抽出方式の下方変換発光ダイオード

Country Status (7)

Country Link
US (1) US20100295075A1 (OSRAM)
EP (1) EP2232591A4 (OSRAM)
JP (1) JP2011507272A (OSRAM)
KR (1) KR20100097205A (OSRAM)
CN (1) CN101897038B (OSRAM)
TW (1) TWI453943B (OSRAM)
WO (1) WO2009075972A2 (OSRAM)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009085594A2 (en) * 2007-12-28 2009-07-09 3M Innovative Properties Company Down-converted light source with uniform wavelength emission
EP2308104A4 (en) * 2008-06-26 2014-04-30 3M Innovative Properties Co SEMICONDUCTOR LIGHT CONVERSION CONSTRUCTION
EP2308101A4 (en) * 2008-06-26 2014-04-30 3M Innovative Properties Co SEMICONDUCTOR LIGHT CONVERSION CONSTRUCTION
US8350462B2 (en) 2008-12-24 2013-01-08 3M Innovative Properties Company Light generating device having double-sided wavelength converter
JP2012514335A (ja) 2008-12-24 2012-06-21 スリーエム イノベイティブ プロパティズ カンパニー 両方の側の波長変換器及びそれを使用する光生成デバイスの作製方法
DE102009020127A1 (de) * 2009-03-25 2010-09-30 Osram Opto Semiconductors Gmbh Leuchtdiode
DE102009023351A1 (de) 2009-05-29 2010-12-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE102009048401A1 (de) 2009-10-06 2011-04-07 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
DE102010008605A1 (de) * 2010-02-19 2011-08-25 OSRAM Opto Semiconductors GmbH, 93055 Optoelektronisches Bauteil
CN102270724B (zh) * 2010-06-01 2014-04-09 陈文彬 发光二极管晶片级色彩纯化的方法
TW201208143A (en) * 2010-08-06 2012-02-16 Semileds Optoelectronics Co White LED device and manufacturing method thereof
CN102593269A (zh) * 2011-01-11 2012-07-18 旭明光电股份有限公司 白光led装置及其制造方法
DE102011014845B4 (de) 2011-03-23 2023-05-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Licht emittierendes Halbleiterbauteil und Verfahren zur Herstellung eines Licht emittierenden Halbleiterbauteils
TWI466343B (zh) * 2012-01-06 2014-12-21 華夏光股份有限公司 發光二極體裝置
JP6396419B2 (ja) 2013-03-29 2018-09-26 フィリップス ライティング ホールディング ビー ヴィ 波長変換素子を有する発光装置
JP2015072751A (ja) * 2013-10-01 2015-04-16 株式会社ジャパンディスプレイ 有機ｅｌ表示装置
DE112015000511B4 (de) 2014-01-27 2023-01-05 Osram Sylvania Inc. Keramischer Wellenlängenumwandler mit einem hochreflektierenden Reflektor
US9529969B2 (en) * 2014-01-27 2016-12-27 RDFISolutions, LLC Event based tracking, health management, and patient and treatment monitoring system
DE102016101442B4 (de) * 2016-01-27 2025-03-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Konversionselement und strahlungsemittierendes Halbleiterbauelement mit einem solchen Konversionselement
CN106410006B (zh) * 2016-06-22 2018-08-17 厦门乾照光电股份有限公司 一种集成可见光指示装置的紫外发光二极管及其生产方法
DE102016113002B4 (de) 2016-07-14 2022-09-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauelemente mit verbesserter Effizienz und Verfahren zur Herstellung von Bauelementen
DE102018101089A1 (de) * 2018-01-18 2019-07-18 Osram Opto Semiconductors Gmbh Epitaktisches konversionselement, verfahren zur herstellung eines epitaktischen konversionselements, strahlungsemittierender halbleiterchip und verfahren zur herstellung eines strahlungsemittierenden halbleiterchips
EP4050666A1 (en) 2021-02-26 2022-08-31 Nichia Corporation Semiconductor light emitting element and method of manufacturing the same

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3739217A (en) * 1969-06-23 1973-06-12 Bell Telephone Labor Inc Surface roughening of electroluminescent diodes
US6252896B1 (en) * 1999-03-05 2001-06-26 Agilent Technologies, Inc. Long-Wavelength VCSEL using buried bragg reflectors
WO2001041225A2 (en) * 1999-12-03 2001-06-07 Cree Lighting Company Enhanced light extraction in leds through the use of internal and external optical elements
JP4044261B2 (ja) * 2000-03-10 2008-02-06 株式会社東芝 半導体発光素子及びその製造方法
US6987613B2 (en) * 2001-03-30 2006-01-17 Lumileds Lighting U.S., Llc Forming an optical element on the surface of a light emitting device for improved light extraction
KR100853410B1 (ko) * 2001-04-11 2008-08-21 소니 가부시키가이샤 소자의 전사방법 및 이를 이용한 소자의 배열방법,화상표시장치의 제조방법
JP2003124504A (ja) * 2001-10-18 2003-04-25 Toshiba Corp 半導体発光装置、および半導体発光装置の製造方法
US6954478B2 (en) * 2002-02-04 2005-10-11 Sanyo Electric Co., Ltd. Nitride-based semiconductor laser device
TW591811B (en) * 2003-01-02 2004-06-11 Epitech Technology Corp Ltd Color mixing light emitting diode
KR101154494B1 (ko) * 2003-12-09 2012-06-13 재팬 사이언스 앤드 테크놀로지 에이젼시 질소면의 표면상의 구조물 제조를 통한 고효율 3족 질화물계 발광다이오드
JP2005277374A (ja) * 2004-02-26 2005-10-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子及びその製造方法
US7361938B2 (en) * 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
US7534633B2 (en) * 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
JP4999696B2 (ja) * 2004-10-22 2012-08-15 ソウル オプト デバイス カンパニー リミテッド ＧａＮ系化合物半導体発光素子及びその製造方法
US7402831B2 (en) * 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
US7045375B1 (en) * 2005-01-14 2006-05-16 Au Optronics Corporation White light emitting device and method of making same
JP2006310721A (ja) * 2005-03-28 2006-11-09 Yokohama National Univ 自発光デバイス
JP2007109792A (ja) * 2005-10-12 2007-04-26 Sony Corp 半導体発光素子および波長変換基板
JP2009515340A (ja) * 2005-10-31 2009-04-09 トラスティーズ オブ ボストン ユニバーシティ テクスチャ出しされた半導体層を特徴とする光学装置
US7791271B2 (en) * 2006-02-24 2010-09-07 Global Oled Technology Llc Top-emitting OLED device with light-scattering layer and color-conversion
US8049233B2 (en) * 2006-03-10 2011-11-01 Panasonic Electric Works Co., Ltd. Light-emitting device
US20070284565A1 (en) * 2006-06-12 2007-12-13 3M Innovative Properties Company Led device with re-emitting semiconductor construction and optical element
US7863634B2 (en) * 2006-06-12 2011-01-04 3M Innovative Properties Company LED device with re-emitting semiconductor construction and reflector
US7902542B2 (en) * 2006-06-14 2011-03-08 3M Innovative Properties Company Adapted LED device with re-emitting semiconductor construction
US7627017B2 (en) * 2006-08-25 2009-12-01 Stc. Unm Laser amplifier and method of making the same
US9018619B2 (en) * 2006-10-09 2015-04-28 Cree, Inc. Quantum wells for light conversion
US20080121903A1 (en) * 2006-11-24 2008-05-29 Sony Corporation Method for manufacturing light-emitting diode, light-emitting diode, lightsource cell unit, light-emitting diode backlight, light-emitting diode illuminating device, light-emitting diode display, and electronic apparatus
JP2010541295A (ja) * 2007-10-08 2010-12-24 スリーエム イノベイティブ プロパティズ カンパニー 半導体波長コンバータが接合された発光ダイオード

Similar Documents

Publication Publication Date Title
JP2011507272A5 (OSRAM)
WO2009048704A3 (en) Light emitting diode with bonded semiconductor wavelength converter
JP2010541295A5 (OSRAM)
JP2008263126A5 (OSRAM)
JP2010192629A5 (OSRAM)
JP6883632B2 (ja) 発光デバイスを製造する方法
TW200733436A (en) Light emitting diode package structure and fabrication method thereof
WO2009075972A3 (en) Down-converted light emitting diode with simplified light extraction
JP2013033786A5 (ja) 半導体装置、半導体装置の製造方法、および電子機器
WO2010146390A3 (en) Light emitting diodes
JP2009157367A5 (OSRAM)
JP2009540618A5 (OSRAM)
WO2009148253A3 (ko) 반도체 발광소자 제조용 지지기판 및 상기 지지기판을 이용한 반도체 발광소자
JP2010528467A5 (OSRAM)
EP2360749A3 (en) Light emitting diode, LED package and lighting system incorporating the same
JP2009540615A5 (OSRAM)
JP2010518646A5 (OSRAM)
JP2014032960A5 (ja) 表示装置の作製方法
EP1705764A4 (en) SEMICONDUCTOR PHOTOEMETTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
WO2009088410A3 (en) Light emitting devices with high efficiency phospor structures
WO2009156856A3 (en) Led with improved external light extraction efficiency
EP2302703A3 (en) Method for manufacturing semiconductor light-emitting device and semiconductor light emitting device
JP2016538689A5 (OSRAM)
JP2009027166A5 (OSRAM)
WO2010150994A3 (ko) 파장변환물질층을 구비하는 발광 다이오드 및 이의 제조방법