JP2010541295A5 - - Google Patents

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Publication number
JP2010541295A5
JP2010541295A5 JP2010528921A JP2010528921A JP2010541295A5 JP 2010541295 A5 JP2010541295 A5 JP 2010541295A5 JP 2010528921 A JP2010528921 A JP 2010528921A JP 2010528921 A JP2010528921 A JP 2010528921A JP 2010541295 A5 JP2010541295 A5 JP 2010541295A5
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JP
Japan
Prior art keywords
led
semiconductor
wavelength converter
emitting diode
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010528921A
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English (en)
Japanese (ja)
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JP2010541295A (ja
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Publication date
Application filed filed Critical
Priority claimed from PCT/US2008/075710 external-priority patent/WO2009048704A2/en
Publication of JP2010541295A publication Critical patent/JP2010541295A/ja
Publication of JP2010541295A5 publication Critical patent/JP2010541295A5/ja
Pending legal-status Critical Current

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JP2010528921A 2007-10-08 2008-09-09 半導体波長コンバータが接合された発光ダイオード Pending JP2010541295A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US97830407P 2007-10-08 2007-10-08
PCT/US2008/075710 WO2009048704A2 (en) 2007-10-08 2008-09-09 Light emitting diode with bonded semiconductor wavelength converter

Publications (2)

Publication Number Publication Date
JP2010541295A JP2010541295A (ja) 2010-12-24
JP2010541295A5 true JP2010541295A5 (OSRAM) 2011-10-20

Family

ID=40549799

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010528921A Pending JP2010541295A (ja) 2007-10-08 2008-09-09 半導体波長コンバータが接合された発光ダイオード

Country Status (7)

Country Link
US (1) US20100283074A1 (OSRAM)
EP (1) EP2206164A2 (OSRAM)
JP (1) JP2010541295A (OSRAM)
KR (1) KR20100077191A (OSRAM)
CN (1) CN101821866B (OSRAM)
TW (1) TW200924249A (OSRAM)
WO (1) WO2009048704A2 (OSRAM)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2487535A1 (en) 2007-05-20 2012-08-15 3M Innovative Properties Company Design parameters for backlights, which have a thin hollow cavity and recycle the light
JP5336474B2 (ja) 2007-05-20 2013-11-06 スリーエム イノベイティブ プロパティズ カンパニー 半鏡面構成要素を備えたリサイクル型バックライト
KR101464795B1 (ko) 2007-05-20 2014-11-27 쓰리엠 이노베이티브 프로퍼티즈 컴파니 광 재순환 중공 공동형 디스플레이 백라이트
US20100295075A1 (en) * 2007-12-10 2010-11-25 3M Innovative Properties Company Down-converted light emitting diode with simplified light extraction
EP2232596A4 (en) * 2007-12-28 2011-03-02 3M Innovative Properties Co LIGHT SOURCE SUBJECT TO DOWN CONVERSION WITH UNIFORM WAVE LENGTH EMISSION
US8637883B2 (en) * 2008-03-19 2014-01-28 Cree, Inc. Low index spacer layer in LED devices
US8748911B2 (en) * 2008-07-16 2014-06-10 3M Innovative Properties Company Stable light source
CN102197554A (zh) 2008-09-04 2011-09-21 3M创新有限公司 单色光源
KR20110048580A (ko) * 2008-09-04 2011-05-11 쓰리엠 이노베이티브 프로퍼티즈 컴파니 광 차단 구성요소를 갖는 광원
CN102197551A (zh) * 2008-09-04 2011-09-21 3M创新有限公司 由gan ld光泵的散热器上式ⅱ-ⅵ族mqw vcsel
EP2380217A2 (en) 2008-12-24 2011-10-26 3M Innovative Properties Company Method of making double-sided wavelength converter and light generating device using same
KR20110105842A (ko) 2008-12-24 2011-09-27 쓰리엠 이노베이티브 프로퍼티즈 컴파니 양면 파장 변환기를 갖는 광 발생 소자
DE102009020127A1 (de) * 2009-03-25 2010-09-30 Osram Opto Semiconductors Gmbh Leuchtdiode
WO2010129412A1 (en) * 2009-05-05 2010-11-11 3M Innovative Properties Company Re-emitting semiconductor construction with enhanced extraction efficiency
CN102804422A (zh) * 2009-05-05 2012-11-28 3M创新有限公司 用于与led结合使用的重发光半导体载流子器件及其制造方法
US8994071B2 (en) 2009-05-05 2015-03-31 3M Innovative Properties Company Semiconductor devices grown on indium-containing substrates utilizing indium depletion mechanisms
DE102009023351A1 (de) 2009-05-29 2010-12-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
JP2012532454A (ja) 2009-06-30 2012-12-13 スリーエム イノベイティブ プロパティズ カンパニー カドミウム非含有の再発光半導体構成体
US8629611B2 (en) 2009-06-30 2014-01-14 3M Innovative Properties Company White light electroluminescent devices with adjustable color temperature
EP2449608A1 (en) 2009-06-30 2012-05-09 3M Innovative Properties Company Electroluminescent devices with color adjustment based on current crowding
DE102009027977A1 (de) * 2009-07-23 2011-01-27 Osram Opto Semiconductors Gmbh Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode
DE102009048401A1 (de) * 2009-10-06 2011-04-07 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
DE102009058006B4 (de) * 2009-12-11 2022-03-31 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil
DE102010006072A1 (de) * 2010-01-28 2011-08-18 OSRAM Opto Semiconductors GmbH, 93055 Optoelektronisches Halbleiterbauteil und Verwendung eines optoelektronischen Halbleiterbauteils in einem Kfz-Schweinwerfer
JP5454303B2 (ja) * 2010-03-30 2014-03-26 ソニー株式会社 半導体発光素子アレイ
TW201208143A (en) * 2010-08-06 2012-02-16 Semileds Optoelectronics Co White LED device and manufacturing method thereof
WO2012067766A2 (en) * 2010-11-18 2012-05-24 3M Innovative Properties Company Light emitting diode component comprising polysilazane bonding layer
WO2012164456A1 (en) * 2011-06-01 2012-12-06 Koninklijke Philips Electronics N.V. Method of attaching a light emitting device to a support substrate
DE102011122778B3 (de) * 2011-11-24 2013-03-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung einer Lumineszenzkonversions-Leuchtdiode
KR101894025B1 (ko) * 2011-12-16 2018-09-03 엘지이노텍 주식회사 발광소자
US9054235B2 (en) 2013-01-22 2015-06-09 Micron Technology, Inc. Solid-state transducer devices with optically-transmissive carrier substrates and related systems, methods, and devices
CN105074945B (zh) 2013-03-29 2018-02-02 飞利浦照明控股有限公司 包括波长转换器的发光设备
CN104103731A (zh) * 2013-04-03 2014-10-15 新世纪光电股份有限公司 发光二极管结构及其制作方法
US9054063B2 (en) * 2013-04-05 2015-06-09 Infineon Technologies Ag High power single-die semiconductor package
TWI766580B (zh) * 2013-07-29 2022-06-01 晶元光電股份有限公司 一種半導體裝置
TWI722242B (zh) * 2013-07-29 2021-03-21 晶元光電股份有限公司 一種半導體裝置
DE102015105693B4 (de) 2015-04-14 2021-05-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Erzeugung von Strahlung unter Verwendung eines strahlungsemittierenden Halbleiterbauelements
CN107924976B (zh) * 2015-08-17 2021-01-08 无限关节内窥镜检查公司 集成光源
US11330963B2 (en) 2015-11-16 2022-05-17 Lazurite Holdings Llc Wireless medical imaging system
DE102016101442B4 (de) * 2016-01-27 2025-03-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Konversionselement und strahlungsemittierendes Halbleiterbauelement mit einem solchen Konversionselement
DE102016104280A1 (de) * 2016-03-09 2017-09-14 Osram Opto Semiconductors Gmbh Bauelement und Verfahren zur Herstellung eines Bauelements
CN106410006B (zh) * 2016-06-22 2018-08-17 厦门乾照光电股份有限公司 一种集成可见光指示装置的紫外发光二极管及其生产方法
JP6793846B6 (ja) 2017-02-15 2020-12-23 インフィニット アースロスコピー インコーポレーテッド， リミテッド ヘッドユニットと集積光源を備える光ケーブルとを備える無線医療撮像システム
JP6911541B2 (ja) * 2017-05-31 2021-07-28 セイコーエプソン株式会社 発光装置およびプロジェクター
KR102384731B1 (ko) * 2017-10-17 2022-04-08 삼성전자주식회사 Led 장치 및 그 제조 방법
CN109037405B (zh) * 2018-07-16 2020-11-13 厦门三安光电有限公司 微发光装置及其显示器
CN110875344A (zh) * 2018-08-31 2020-03-10 昆山工研院新型平板显示技术中心有限公司 一种led显示器件的制备方法及led显示器件
CN109841710B (zh) * 2019-04-12 2020-05-15 南京大学 用于透明显示的GaN Micro-LED阵列器件及其制备方法
US11637219B2 (en) 2019-04-12 2023-04-25 Google Llc Monolithic integration of different light emitting structures on a same substrate
JP7071648B2 (ja) * 2019-05-16 2022-05-19 日亜化学工業株式会社 発光装置及び発光装置の製造方法
DE102019115351A1 (de) 2019-06-06 2020-12-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement mit Strahlungskonversionselement und Verfahren zum Herstellen von Strahlungskonversionselementen
CN114303240A (zh) 2019-08-20 2022-04-08 首尔伟傲世有限公司 显示用发光元件以及具有其的显示装置
USD938584S1 (en) 2020-03-30 2021-12-14 Lazurite Holdings Llc Hand piece
USD972176S1 (en) 2020-08-06 2022-12-06 Lazurite Holdings Llc Light source
GB2600429B (en) * 2020-10-28 2023-11-01 Plessey Semiconductors Ltd High colour purity LED

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5895932A (en) * 1997-01-24 1999-04-20 International Business Machines Corporation Hybrid organic-inorganic semiconductor light emitting diodes
US5898185A (en) * 1997-01-24 1999-04-27 International Business Machines Corporation Hybrid organic-inorganic semiconductor light emitting diodes
JPH10270799A (ja) * 1997-03-21 1998-10-09 Sanyo Electric Co Ltd 発光素子
AU4139101A (en) * 1999-12-03 2001-06-12 Cree Lighting Company Enhanced light extraction in leds through the use of internal and external optical elements
JP3407730B2 (ja) * 2000-11-02 2003-05-19 サンケン電気株式会社 半導体発光装置の製法
US6841802B2 (en) * 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
KR100576856B1 (ko) * 2003-12-23 2006-05-10 삼성전기주식회사 질화물 반도체 발광소자 및 제조방법
JP4622253B2 (ja) * 2004-01-22 2011-02-02 日亜化学工業株式会社 発光デバイス及びその製造方法
JP2005259891A (ja) * 2004-03-10 2005-09-22 Toyoda Gosei Co Ltd 発光装置
US7361938B2 (en) * 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
JP4632697B2 (ja) * 2004-06-18 2011-02-16 スタンレー電気株式会社 半導体発光素子及びその製造方法
US7534633B2 (en) * 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
JP2006041077A (ja) * 2004-07-26 2006-02-09 Sumitomo Chemical Co Ltd 蛍光体
US7462502B2 (en) * 2004-11-12 2008-12-09 Philips Lumileds Lighting Company, Llc Color control by alteration of wavelength converting element
US7402831B2 (en) * 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
JP4971672B2 (ja) * 2005-09-09 2012-07-11 パナソニック株式会社 発光装置
JP2007109792A (ja) * 2005-10-12 2007-04-26 Sony Corp 半導体発光素子および波長変換基板
TW200729540A (en) * 2006-01-27 2007-08-01 San-Bao Lin Improvement of brightness for light-emitting device
CN101395728B (zh) * 2006-03-10 2011-04-13 松下电工株式会社 发光元件及其制造方法
US20090008729A1 (en) * 2007-07-03 2009-01-08 Advanced Chip Engineering Technology Inc. Image sensor package utilizing a removable protection film and method of making the same
US7538359B2 (en) * 2007-08-16 2009-05-26 Philips Lumiled Lighting Company, Llc Backlight including side-emitting semiconductor light emitting devices

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