JP2011507228A - Ledパッケージ及びその製造方法 - Google Patents
Ledパッケージ及びその製造方法 Download PDFInfo
- Publication number
- JP2011507228A JP2011507228A JP2010536841A JP2010536841A JP2011507228A JP 2011507228 A JP2011507228 A JP 2011507228A JP 2010536841 A JP2010536841 A JP 2010536841A JP 2010536841 A JP2010536841 A JP 2010536841A JP 2011507228 A JP2011507228 A JP 2011507228A
- Authority
- JP
- Japan
- Prior art keywords
- housing
- sealing material
- led package
- forming
- led chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 239000003566 sealing material Substances 0.000 claims abstract description 97
- 238000000034 method Methods 0.000 claims abstract description 62
- 238000001721 transfer moulding Methods 0.000 claims abstract description 54
- 230000008569 process Effects 0.000 claims abstract description 43
- 229920005989 resin Polymers 0.000 claims abstract description 30
- 239000011347 resin Substances 0.000 claims abstract description 30
- 239000008393 encapsulating agent Substances 0.000 claims description 24
- 238000000465 moulding Methods 0.000 claims description 21
- 239000003795 chemical substances by application Substances 0.000 claims description 17
- 239000007791 liquid phase Substances 0.000 claims description 13
- 238000007789 sealing Methods 0.000 claims description 7
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 5
- 239000012778 molding material Substances 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 229920006336 epoxy molding compound Polymers 0.000 description 16
- 239000000463 material Substances 0.000 description 7
- 239000004593 Epoxy Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 229920001296 polysiloxane Polymers 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000001746 injection moulding Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229920002050 silicone resin Polymers 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000007790 solid phase Substances 0.000 description 3
- RKUAZJIXKHPFRK-UHFFFAOYSA-N 1,3,5-trichloro-2-(2,4-dichlorophenyl)benzene Chemical compound ClC1=CC(Cl)=CC=C1C1=C(Cl)C=C(Cl)C=C1Cl RKUAZJIXKHPFRK-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000004590 silicone sealant Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Injection Moulding Of Plastics Or The Like (AREA)
Abstract
Description
Claims (20)
- LEDチップが搭載されるベースと、
透光性樹脂で形成され前記LEDチップを封止し、金型を用いた成形プロセスにより
所望の上部面の形状に形成された封止材と、
前記封止材の上部を露出させ、前記封止材の側面を取り囲む形状に形成されたハウジングと
を備えることを特徴とするLEDパッケージ。 - 前記ハウジングは、前記封止材の形成前または形成後にトランスファー成形プロセスによって形成されることを特徴とする請求項1に記載のLEDパッケージ。
- 前記ハウジングは、透光性を有することを特徴とする請求項2に記載のLEDパッケージ。
- 前記ハウジングは、指向角の調整のための拡散剤が含まれたレフレクターとして使用される半透明のハウジングであることを特徴とする請求項3に記載のLEDパッケージ。
- 前記封止材の上部は、平面またはレンズ形に形成されることを特徴とする請求項1に記載のLEDパッケージ。
- 前記金形を用いた成形プロセスは、トランスファー成形プロセスであることを特徴とする請求項1に記載のLEDパッケージ。
- LEDチップが搭載されるベースと、
透光性樹脂で形成され前記LEDチップを封止する封止材と、
前記封止材の上部を露出させ、前記封止材の側面を取り囲む形状に形成され、透光性を有するハウジングと
を備えることを特徴とするLEDパッケージ。 - 前記ハウジングは、指向角の調整のための拡散剤が含まれたレフレクターとして使用される半透明のハウジングであることを特徴とする請求項7に記載のLEDパッケージ。
- 前記ハウジングと前記封止材とは、トランスファー成形プロセスによって形成されることを特徴とする請求項7に記載のLEDパッケージ。
- 前記ベースの上面には、LEDチップまたはボンディングワイヤのボンディングパッドを収容する少なくとも一つの凹部が形成されることを特徴とする請求項1または7に記載のLEDパッケージ。
- ベースにLEDチップを搭載するステップと、
前記ベースを支持するハウジングを形成するステップと、
前記ハウジングによって側面が取り囲まれ、前記LEDチップを封止する透光性の封止材を形成するステップと、を含み、
前記封止材を形成するステップは、金型を用いて前記封止材をモールド成形して前記封止材を所望の上部面の形状とすることを特徴とするLEDパッケージの製造方法。 - ベースにLEDチップを搭載するステップと、
前記LEDチップを封止し、前記ベースを支持する透光性の封止材を形成するステップと、
前記封止材の側面を取り囲むハウジングを形成するステップと、を含み、
前記封止材を形成するステップは、金型を用いて前記封止材をモールド成形して前記封止材を所望の上部面の形状とすることを特徴とするLEDパッケージの製造方法。 - 前記ハウジングを形成するステップは、トランスファー成形プロセスを用いることを特徴とする請求項11または12に記載のLEDパッケージの製造方法。
- 前記ハウジングを形成するステップは、透明樹脂に拡散剤が混合された成形材料を用いてなることを特徴とする請求項13に記載のLEDパッケージの製造方法。
- 前記ハウジングを形成するステップは、前記拡散剤の混合比率を調整して指向角が調整されることを特徴とする請求項14に記載のLEDパッケージの製造方法。
- 前記拡散剤は、TiO2、SiO2、ZNO、Y2O3からなる群より選ばれた少なくともいずれか一つであることを特徴とする請求項14に記載のLEDパッケージの製造方法。
- 前記封止材を形成するステップは、トランスファー成形プロセスを用いることを特徴とする請求項11または12に記載のLEDパッケージの製造方法。
- 前記封止材を形成するステップまたは前記ハウジングを形成するステップは、多重トランスファー成形プロセスを用いることを特徴とする請求項11または12に記載のLEDパッケージの製造方法。
- LEDチップが搭載されるベースと、
前記LEDチップを封止するように透光性樹脂で形成された封止材と、
前記封止材の上部を露出させ、前記封止材の側面を取り囲む形状に形成されたハウジングとを備え、
前記ハウジングは、金型を用いたトランスファー成形プロセスによって形成されることを特徴とするLEDパッケージ。 - 前記封止材は、前記ハウジングに形成されたキャビティに液相の透光性樹脂をドット方式で注入して形成されることを特徴とする請求項19に記載のLEDパッケージ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20070126436A KR101488448B1 (ko) | 2007-12-06 | 2007-12-06 | Led 패키지 및 그 제조방법 |
PCT/KR2008/007103 WO2009072786A2 (en) | 2007-12-06 | 2008-12-02 | Led package and method for fabricating the same |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2011507228A true JP2011507228A (ja) | 2011-03-03 |
Family
ID=40718337
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010536841A Withdrawn JP2011507228A (ja) | 2007-12-06 | 2008-12-02 | Ledパッケージ及びその製造方法 |
Country Status (6)
Country | Link |
---|---|
US (3) | US20110108866A1 (ja) |
EP (1) | EP2215667B1 (ja) |
JP (1) | JP2011507228A (ja) |
KR (1) | KR101488448B1 (ja) |
TW (1) | TWI497746B (ja) |
WO (1) | WO2009072786A2 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012231023A (ja) * | 2011-04-26 | 2012-11-22 | Enplas Corp | 光束制御部材、この光束制御部材を備えた発光装置およびこの発光装置を備えた面光源装置。 |
JP2012231068A (ja) * | 2011-04-27 | 2012-11-22 | Nichia Chem Ind Ltd | 発光装置 |
KR20150086670A (ko) * | 2014-01-20 | 2015-07-29 | 엘지이노텍 주식회사 | 광원모듈 및 이를 구비한 조명 시스템 |
JP2022121352A (ja) * | 2021-02-08 | 2022-08-19 | 健策精密工業股▲ふん▼有限公司 | リードフレーム構造及びその製造方法 |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9502624B2 (en) * | 2006-05-18 | 2016-11-22 | Nichia Corporation | Resin molding, surface mounted light emitting apparatus and methods for manufacturing the same |
US8217482B2 (en) | 2007-12-21 | 2012-07-10 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Infrared proximity sensor package with reduced crosstalk |
JP5416975B2 (ja) * | 2008-03-11 | 2014-02-12 | ローム株式会社 | 半導体発光装置 |
TWI460889B (zh) * | 2009-10-23 | 2014-11-11 | Everlight Electronics Co Ltd | 發光二極體封裝結構 |
US8704264B2 (en) | 2008-12-15 | 2014-04-22 | Everlight Electronics Co., Ltd. | Light emitting diode package structure |
US8420999B2 (en) | 2009-05-08 | 2013-04-16 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Metal shield and housing for optical proximity sensor with increased resistance to mechanical deformation |
WO2010150754A1 (ja) * | 2009-06-22 | 2010-12-29 | 日亜化学工業株式会社 | 発光装置 |
US9525093B2 (en) | 2009-06-30 | 2016-12-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Infrared attenuating or blocking layer in optical proximity sensor |
US8779361B2 (en) | 2009-06-30 | 2014-07-15 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Optical proximity sensor package with molded infrared light rejection barrier and infrared pass components |
US8957380B2 (en) | 2009-06-30 | 2015-02-17 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Infrared attenuating or blocking layer in optical proximity sensor |
US8143608B2 (en) | 2009-09-10 | 2012-03-27 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Package-on-package (POP) optical proximity sensor |
US8350216B2 (en) | 2009-09-10 | 2013-01-08 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Miniaturized optical proximity sensor |
US8716665B2 (en) | 2009-09-10 | 2014-05-06 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Compact optical proximity sensor with ball grid array and windowed substrate |
US8097852B2 (en) | 2009-09-10 | 2012-01-17 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Multiple transfer molded optical proximity sensor and corresponding method |
US20110062470A1 (en) * | 2009-09-17 | 2011-03-17 | Koninklijke Philips Electronics N.V. | Reduced angular emission cone illumination leds |
JP5471244B2 (ja) * | 2009-09-29 | 2014-04-16 | 豊田合成株式会社 | 照明装置 |
CN102549785B (zh) * | 2009-10-01 | 2014-12-17 | 日亚化学工业株式会社 | 发光装置 |
US9733357B2 (en) | 2009-11-23 | 2017-08-15 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Infrared proximity sensor package with improved crosstalk isolation |
CN102456824A (zh) * | 2010-10-21 | 2012-05-16 | 展晶科技(深圳)有限公司 | 发光二极管封装结构 |
MY170920A (en) | 2010-11-02 | 2019-09-17 | Carsem M Sdn Bhd | Leadframe package with recessed cavity for led |
US8841597B2 (en) | 2010-12-27 | 2014-09-23 | Avago Technologies Ip (Singapore) Pte. Ltd. | Housing for optical proximity sensor |
KR101805118B1 (ko) * | 2011-05-30 | 2017-12-05 | 엘지이노텍 주식회사 | 발광소자패키지 |
CN103000783A (zh) * | 2011-09-19 | 2013-03-27 | 展晶科技(深圳)有限公司 | 发光二极管及其制造方法 |
DE102011084885A1 (de) * | 2011-10-20 | 2013-04-25 | Osram Gmbh | Auflage für eine Leuchtvorrichtung |
MY156107A (en) | 2011-11-01 | 2016-01-15 | Carsem M Sdn Bhd | Large panel leadframe |
US8564012B2 (en) * | 2012-02-10 | 2013-10-22 | Intersil Americas LLC | Optoelectronic apparatuses and methods for manufacturing optoelectronic apparatuses |
JP2013239540A (ja) * | 2012-05-14 | 2013-11-28 | Shin Etsu Chem Co Ltd | 光半導体装置用基板とその製造方法、及び光半導体装置とその製造方法 |
US9435502B2 (en) * | 2012-09-28 | 2016-09-06 | Greggory Tate Homrighous and Frank Bryan Homrighous | Solar powered signs including solar panels and light-emitting diodes |
USD731987S1 (en) * | 2012-12-28 | 2015-06-16 | Nichia Corporation | Light emitting diode |
JP6131664B2 (ja) * | 2013-03-25 | 2017-05-24 | 日亜化学工業株式会社 | 発光装置の製造方法および発光装置 |
CN105993081A (zh) * | 2013-12-06 | 2016-10-05 | 皇家飞利浦有限公司 | 安装组件和照明设备 |
KR101969985B1 (ko) * | 2015-01-16 | 2019-04-17 | 이우필 | 리플렉터, 리플렉터가 결합된 엘이디패키지 및 그 제조방법 |
CN108886079B (zh) * | 2016-03-22 | 2022-07-19 | 苏州乐琻半导体有限公司 | 发光器件 |
JP1563810S (ja) * | 2016-03-24 | 2016-11-21 | ||
KR20180081647A (ko) * | 2017-01-06 | 2018-07-17 | 삼성전자주식회사 | 발광 패키지 |
CN111987212A (zh) * | 2017-06-27 | 2020-11-24 | 亿光电子工业股份有限公司 | 一种封装支架结构及包含该封装支架机构的发光装置 |
US11444227B2 (en) | 2019-10-01 | 2022-09-13 | Dominant Opto Technologies Sdn Bhd | Light emitting diode package with substrate configuration having enhanced structural integrity |
CN113363367A (zh) | 2020-03-06 | 2021-09-07 | 隆达电子股份有限公司 | 发光二极管结构 |
US11444225B2 (en) | 2020-09-08 | 2022-09-13 | Dominant Opto Technologies Sdn Bhd | Light emitting diode package having a protective coating |
US11329206B2 (en) | 2020-09-28 | 2022-05-10 | Dominant Opto Technologies Sdn Bhd | Lead frame and housing sub-assembly for use in a light emitting diode package and method for manufacturing the same |
CN114089565B (zh) * | 2021-12-06 | 2022-11-25 | 武汉创维光显电子有限公司 | 发光组件和背光模组 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000049383A (ja) * | 1998-07-27 | 2000-02-18 | Matsushita Electron Corp | 光電変換素子及びその製造方法 |
JP2002094124A (ja) * | 2000-09-14 | 2002-03-29 | Stanley Electric Co Ltd | 面実装部品の製造方法 |
JP2004274027A (ja) * | 2003-02-18 | 2004-09-30 | Sharp Corp | 半導体発光装置、その製造方法および電子撮像装置 |
JP2005259972A (ja) * | 2004-03-11 | 2005-09-22 | Stanley Electric Co Ltd | 表面実装型led |
JP2006093672A (ja) * | 2004-08-26 | 2006-04-06 | Toshiba Corp | 半導体発光装置 |
JP2006303397A (ja) * | 2005-04-25 | 2006-11-02 | Matsushita Electric Works Ltd | 発光装置 |
JP2006324623A (ja) * | 2005-05-19 | 2006-11-30 | Yo Hifuku | 発光デバイス及びその製造方法 |
WO2007007959A1 (en) * | 2005-07-13 | 2007-01-18 | Seoul Semiconductor Co., Ltd. | Mold for forming a molding member and method of fabricating a molding member using the same |
JP2007049167A (ja) * | 2005-08-11 | 2007-02-22 | Avago Technologies Ecbu Ip (Singapore) Pte Ltd | 一体型のレンズを備えるplccパッケージ及びそのパッケージを作製するための方法 |
JP2007288198A (ja) * | 2006-04-17 | 2007-11-01 | Samsung Electro-Mechanics Co Ltd | 発光ダイオードパッケージ及びその製造方法 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3504079B2 (ja) * | 1996-08-31 | 2004-03-08 | 株式会社東芝 | 半導体発光ダイオード素子の製造方法 |
KR19980025874A (ko) * | 1996-10-05 | 1998-07-15 | 김광호 | Ccd용 반도체 칩 패키지 |
JP2000183407A (ja) * | 1998-12-16 | 2000-06-30 | Rohm Co Ltd | 光半導体装置 |
JP2001168400A (ja) * | 1999-12-09 | 2001-06-22 | Rohm Co Ltd | ケース付チップ型発光装置およびその製造方法 |
US20030075724A1 (en) * | 2001-10-19 | 2003-04-24 | Bily Wang | Wing-shaped surface mount package for light emitting diodes |
DE10065381B4 (de) | 2000-12-27 | 2010-08-26 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement mit Lumineszenzkonversionselement |
DE10153259A1 (de) | 2001-10-31 | 2003-05-22 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
JP4009097B2 (ja) * | 2001-12-07 | 2007-11-14 | 日立電線株式会社 | 発光装置及びその製造方法、ならびに発光装置の製造に用いるリードフレーム |
DE10229067B4 (de) * | 2002-06-28 | 2007-08-16 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu dessen Herstellung |
JP2004158557A (ja) * | 2002-11-05 | 2004-06-03 | Shurai Kagi Kofun Yugenkoshi | 類似フリップチップ型の発光ダイオード装置パッケージ |
US6841934B2 (en) * | 2003-02-26 | 2005-01-11 | Harvatek Corporation | White light source from light emitting diode |
JP4174823B2 (ja) | 2003-03-27 | 2008-11-05 | サンケン電気株式会社 | 半導体発光装置 |
US7276782B2 (en) * | 2003-10-31 | 2007-10-02 | Harvatek Corporation | Package structure for semiconductor |
KR100540848B1 (ko) * | 2004-01-02 | 2006-01-11 | 주식회사 메디아나전자 | 이중 몰드로 구성된 백색 발광다이오드 소자 및 그 제조방법 |
JP2005317661A (ja) * | 2004-04-27 | 2005-11-10 | Sharp Corp | 半導体発光装置およびその製造方法 |
JP4359195B2 (ja) * | 2004-06-11 | 2009-11-04 | 株式会社東芝 | 半導体発光装置及びその製造方法並びに半導体発光ユニット |
JP4608294B2 (ja) | 2004-11-30 | 2011-01-12 | 日亜化学工業株式会社 | 樹脂成形体及び表面実装型発光装置並びにそれらの製造方法 |
JP4991173B2 (ja) * | 2005-04-27 | 2012-08-01 | 京セラ株式会社 | 発光素子搭載用基体ならびにこれを用いた発光装置 |
KR20070000638A (ko) * | 2005-06-28 | 2007-01-03 | 삼성전기주식회사 | 고휘도 발광 다이오드 소자 및 그 제조방법 |
DE102006032415A1 (de) * | 2005-09-30 | 2007-04-05 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines strahlungsemittierenden Bauelements und strahlungsemittierendes Bauelement |
JP4965858B2 (ja) * | 2005-12-26 | 2012-07-04 | 株式会社東芝 | レンズ付発光ダイオード装置 |
US7521728B2 (en) * | 2006-01-20 | 2009-04-21 | Cree, Inc. | Packages for semiconductor light emitting devices utilizing dispensed reflectors and methods of forming the same |
US7808004B2 (en) * | 2006-03-17 | 2010-10-05 | Edison Opto Corporation | Light emitting diode package structure and method of manufacturing the same |
USD563333S1 (en) * | 2006-04-05 | 2008-03-04 | Seoul Semiconductor Co., Ltd. | Light emitting diode (LED) |
JP5119621B2 (ja) * | 2006-04-21 | 2013-01-16 | 日亜化学工業株式会社 | 発光装置 |
JP2007305785A (ja) * | 2006-05-11 | 2007-11-22 | Nichia Chem Ind Ltd | 発光装置 |
TWI338380B (en) * | 2006-10-11 | 2011-03-01 | Chuan Yu Hung | Light emitting diode incorporating high refractive index material |
JP5060172B2 (ja) * | 2007-05-29 | 2012-10-31 | 岩谷産業株式会社 | 半導体発光装置 |
-
2007
- 2007-12-06 KR KR20070126436A patent/KR101488448B1/ko active IP Right Grant
-
2008
- 2008-12-02 JP JP2010536841A patent/JP2011507228A/ja not_active Withdrawn
- 2008-12-02 WO PCT/KR2008/007103 patent/WO2009072786A2/en active Application Filing
- 2008-12-02 EP EP08857114.6A patent/EP2215667B1/en active Active
- 2008-12-02 US US12/746,447 patent/US20110108866A1/en not_active Abandoned
- 2008-12-05 TW TW097147391A patent/TWI497746B/zh active
-
2013
- 2013-12-27 US US14/142,071 patent/US9698319B2/en active Active
-
2014
- 2014-06-27 US US14/318,125 patent/US20140306257A1/en not_active Abandoned
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000049383A (ja) * | 1998-07-27 | 2000-02-18 | Matsushita Electron Corp | 光電変換素子及びその製造方法 |
JP2002094124A (ja) * | 2000-09-14 | 2002-03-29 | Stanley Electric Co Ltd | 面実装部品の製造方法 |
JP2004274027A (ja) * | 2003-02-18 | 2004-09-30 | Sharp Corp | 半導体発光装置、その製造方法および電子撮像装置 |
JP2005259972A (ja) * | 2004-03-11 | 2005-09-22 | Stanley Electric Co Ltd | 表面実装型led |
JP2006093672A (ja) * | 2004-08-26 | 2006-04-06 | Toshiba Corp | 半導体発光装置 |
JP2006303397A (ja) * | 2005-04-25 | 2006-11-02 | Matsushita Electric Works Ltd | 発光装置 |
JP2006324623A (ja) * | 2005-05-19 | 2006-11-30 | Yo Hifuku | 発光デバイス及びその製造方法 |
WO2007007959A1 (en) * | 2005-07-13 | 2007-01-18 | Seoul Semiconductor Co., Ltd. | Mold for forming a molding member and method of fabricating a molding member using the same |
JP2007049167A (ja) * | 2005-08-11 | 2007-02-22 | Avago Technologies Ecbu Ip (Singapore) Pte Ltd | 一体型のレンズを備えるplccパッケージ及びそのパッケージを作製するための方法 |
JP2007288198A (ja) * | 2006-04-17 | 2007-11-01 | Samsung Electro-Mechanics Co Ltd | 発光ダイオードパッケージ及びその製造方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012231023A (ja) * | 2011-04-26 | 2012-11-22 | Enplas Corp | 光束制御部材、この光束制御部材を備えた発光装置およびこの発光装置を備えた面光源装置。 |
JP2012231068A (ja) * | 2011-04-27 | 2012-11-22 | Nichia Chem Ind Ltd | 発光装置 |
KR20150086670A (ko) * | 2014-01-20 | 2015-07-29 | 엘지이노텍 주식회사 | 광원모듈 및 이를 구비한 조명 시스템 |
KR102199982B1 (ko) * | 2014-01-20 | 2021-01-08 | 엘지이노텍 주식회사 | 광원모듈 및 이를 구비한 조명 시스템 |
JP2022121352A (ja) * | 2021-02-08 | 2022-08-19 | 健策精密工業股▲ふん▼有限公司 | リードフレーム構造及びその製造方法 |
JP7220738B2 (ja) | 2021-02-08 | 2023-02-10 | 健策精密工業股▲ふん▼有限公司 | リードフレーム構造及びその製造方法 |
US11984385B2 (en) | 2021-02-08 | 2024-05-14 | Jentech Precision Industrial Co., Ltd. | Lead frame structure and manufacturing method thereof |
Also Published As
Publication number | Publication date |
---|---|
KR20090059538A (ko) | 2009-06-11 |
KR101488448B1 (ko) | 2015-02-02 |
US9698319B2 (en) | 2017-07-04 |
US20110108866A1 (en) | 2011-05-12 |
US20140110739A1 (en) | 2014-04-24 |
WO2009072786A2 (en) | 2009-06-11 |
EP2215667A4 (en) | 2012-04-04 |
US20140306257A1 (en) | 2014-10-16 |
EP2215667A2 (en) | 2010-08-11 |
EP2215667B1 (en) | 2019-02-27 |
TW200931691A (en) | 2009-07-16 |
WO2009072786A3 (en) | 2009-09-03 |
TWI497746B (zh) | 2015-08-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101488448B1 (ko) | Led 패키지 및 그 제조방법 | |
US8525213B2 (en) | Light emitting device having multiple cavities and light unit having the same | |
TWI441350B (zh) | 樹脂填封發光體及其製造方法 | |
JP5154155B2 (ja) | 固体発光デバイス用のリードフレームベースのパッケージ、および固体発光デバイス用のリードフレームベースのパッケージを形成する方法 | |
US7714342B2 (en) | Chip coated light emitting diode package and manufacturing method thereof | |
TWI463708B (zh) | 側面出光型發光元件封裝結構及其製造方法 | |
US9224925B2 (en) | Semiconductor light-emitting device and manufacturing method | |
JP3447604B2 (ja) | 表面実装型発光ダイオード及びその製造方法 | |
US20050199884A1 (en) | High power LED package | |
KR20120084554A (ko) | 발광소자 패키지 및 그 제조 방법 | |
JP5286122B2 (ja) | 半導体発光装置および半導体発光装置の製造方法 | |
KR20090073598A (ko) | Led 패키지 | |
TW201007988A (en) | LED package, lead frame and method for producing the same | |
EP2325908A2 (en) | Light emitting device package | |
KR101655464B1 (ko) | 발광소자 패키지, 그 제조방법 및 조명시스템 | |
KR101549383B1 (ko) | Led 패키지 및 그 제조방법 | |
KR101423455B1 (ko) | Led 패키지 및 그 제조방법 | |
KR20090102951A (ko) | Led 패키지 및 그것의 봉지재 형성방법 | |
JP2020021784A (ja) | Led及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20111202 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130123 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130205 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130507 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130514 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130605 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20130820 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131220 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20140212 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20140307 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150121 |
|
A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20150309 |